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Inventor profile of:

Junnosuke Sekiguchi

City:

Ibaraki

Country:

Japan

Published Applications:

Last publication date:

2013-06-06

Top Assignees for applications by Junnosuke Sekiguchi

The entities that hold a legal rights for patent applications filed by inventor Sekiguchi Junnosuke:

Nippon Mining & Metals Co., Ltd. 6 Tokyo, Japan
Nippon Mining & Metals Co., Ltd 5 Minato-Ku, Tokyo, Japan
JX NIPPON MINING & METALS CORPORATION 4 Tokyo, Japan
JX NIPPON MINING & METALS CORPORATION 3 Tokyo, Japan
JX Nippon Mining & Metals Corporation 2 Chiyoda-ku, Tokyo, Japan
NIPPON MINING & METALS CO., LTD. 2 Tokyo, Japan
Nippon Mining & Metals Co., Ltd. 1 , Japan

Recent patent applications by Sekiguchi Junnosuke

Junnosuke Sekiguchi from Ibaraki, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-06-06

US20130139648A1

Chemistry; metallurgy

Recovery Method for High Purity Platinum

#2 | 2012-05-17

US20120118747A1

Chemistry; metallurgy

Nickel-iron alloy plating solution

#3 | 2012-05-03

US20120103820A1

Chemistry; metallurgy

ELECTROLYTIC COPPER PLATING SOLUTION FOR FILLING FOR FORMING MICROWIRING OF COPPER FOR ULSI

#4 | 2012-05-03

US20120103229A1

Chemistry; metallurgy

Aqueous solution containing divalent iron ions

#5 | 2011-10-06

US20110241209A1

Electricity

Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power

#6 | 2011-07-07

US20110162971A1

Chemistry; metallurgy

Sputtering target and process for producing same

#7 | 2011-06-02

US20110129688A1

Chemistry; metallurgy

Plated product having copper thin film formed thereon by electroless plating

#8 | 2011-01-13

US20110006427A1

Electricity

Electronic component formed with barrier-seed layer on base material

#9 | 2011-01-13

US20110006426A1

Chemistry; metallurgy

Electronic component formed with barrier-seed layer on base material

#10 | 2010-12-16

US20100314766A1

Electricity

ULSI micro-interconnect member having ruthenium electroplating layer on barrier layer

#11 | 2010-12-09

US20100307923A1

Chemistry; metallurgy

Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode

#12 | 2010-09-30

US20100244259A1

Electricity

Substrate and manufacturing method therefor

#13 | 2010-09-30

US20100244258A1

Electricity

Substrate and manufacturing method therefor

#14 | 2010-02-18

US20100038111A1

Electricity

Plated article having metal thin film formed by electroless plating, and manufacturing method thereof

#15 | 2010-01-19

US10486078

Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion

#16 | 2010-01-07

US20100003539A1

Electricity

Plated article having metal thin film formed by electroless plating

#17 | 2010-01-07

US20100000871A1

Chemistry; metallurgy

Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode

#18 | 2007-03-29

US20070071904A1

Chemistry; metallurgy

Electroless copper plating solution and electroless copper plating method

#19 | 2007-02-22

US20070042125A1

Chemistry; metallurgy

Electroless copper plating solution

#20 | 2006-11-21

US10362152

Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anode

#21 | 2006-10-19

US20060233963A1

Chemistry; metallurgy

Method for electroless plating and metal-plated article

InventorID:

268570 ⎘