San Jose, California
United States
29
2013-06-27
24
2013-11-26
These are the the leading inventors for applications assigned to EPOWERSOFT, INC.:
EPOWERSOFT, INC. based in San Jose, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Fabrication of floating guard rings using selective regrowth
#2 | 2013-06-27 ✅ Patent 8,822,311 granted on 2014-09-02Method of fabricating a GaN P-i-N diode using implantation
#3 | 2013-06-27 ✅ Patent 8,829,574 granted on 2014-09-09Method and system for a GaN vertical JFET with self-aligned source and gate
#4 | 2013-06-27 ✅ Patent 8,866,147 granted on 2014-10-21Method and system for a GaN self-aligned vertical MESFET
#5 | 2013-06-27 ✅ Patent 8,741,707 granted on 2014-06-03Method and system for fabricating edge termination structures in GaN materials
#6 | 2013-06-27 ✅ Patent 8,716,716 granted on 2014-05-06Method and system for junction termination in GaN materials using conductivity modulation
#7 | 2013-06-20 ✅ Patent 9,006,800 granted on 2015-04-14Ingan ohmic source contacts for vertical power devices
#8 | 2013-06-13 ✅ Patent 8,698,164 granted on 2014-04-15Vertical GaN JFET with gate source electrodes on regrown gate
#9 | 2013-06-13 ✅ Patent 8,558,242 granted on 2013-10-15Vertical GaN-based metal insulator semiconductor FET
#10 | 2013-06-06IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES
#11 | 2013-05-30 ✅ Patent 8,569,153 granted on 2013-10-29Method and system for carbon doping control in gallium nitride based devices
#12 | 2013-05-23 ✅ Patent 8,592,938 granted on 2013-11-26GaN-based Schottky barrier diode with field plate
#13 | 2013-05-23 ✅ Patent 8,836,071 granted on 2014-09-16Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer
#14 | 2013-05-23 ✅ Patent 8,749,015 granted on 2014-06-10Method and system for fabricating floating guard rings in GaN materials
#15 | 2013-05-23 ✅ Patent 9,159,784 granted on 2015-10-13Aluminum gallium nitride etch stop layer for gallium nitride based devices
#16 | 2013-05-09 ✅ Patent 8,502,234 granted on 2013-08-06Monolithically integrated vertical JFET and Schottky diode
#17 | 2013-04-11 ✅ Patent 8,933,532 granted on 2015-01-13Schottky diode with buried layer in GaN materials
#18 | 2013-04-11 ✅ Patent 8,778,788 granted on 2014-07-15Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
#19 | 2013-04-11 ✅ Patent 9,224,828 granted on 2015-12-29Method and system for floating guard rings in gallium nitride materials
#20 | 2013-04-11MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE
#21 | 2013-03-28 ✅ Patent 8,846,482 granted on 2014-09-30Method and system for diffusion and implantation in gallium nitride based devices
#22 | 2013-03-07 ✅ Patent 9,093,395 granted on 2015-07-28Method and system for local control of defect density in gallium nitride based electronics
#23 | 2013-02-07 ✅ Patent 9,136,116 granted on 2015-09-15Method and system for formation of P-N junctions in gallium nitride based electronics
#24 | 2013-02-07 ✅ Patent 8,946,788 granted on 2015-02-03Method and system for doping control in gallium nitride based devices
#25 | 2013-02-07 ✅ Patent 8,969,912 granted on 2015-03-03Method and system for a GaN vertical JFET utilizing a regrown channel
#26 | 2013-02-07 ✅ Patent 9,184,305 granted on 2015-11-10Method and system for a GAN vertical JFET utilizing a regrown gate
#27 | 2013-01-17Electrical Isolation Of High Defect Density Regions In A Semiconductor Device
#28 | 2012-12-06Epitaxial Lift-Off and Wafer Reuse
#29 | 2012-10-04Controlled Doping in III-V Materials
Also check out EPOWERSOFT, INC.'s (San Jose, United States) applicant profile with 1 patent applications submitted.
4401 ⎘