Inventor profile of:

David P. Bour

City:

Cupertino, California

Country:

United States

Published Applications:

114

Last publication date:

2024-07-25

Top Assignees for applications by David P. Bour

The entities that hold a legal rights for patent applications filed by inventor Bour David P.:

Recent patent applications by Bour David P.

David P. Bour from Cupertino, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-07-25
US20240250217A1
Electricity

Plug Regrowth for Micro LED Uniformity and Efficiency Improvement

#2 | 2024-07-25
US20240250211A1
Electricity

Regrowth Structures for Micro LED

#3 | 2020-05-21
US20200161496A1
Electricity

Light emitting diode with displaced P-type doping

#4 | 2020-02-13
US20200052158A1
Electricity

LED sidewall processing to mitigate non-radiative recombination

#5 | 2019-12-05
US20190371964A1
Electricity

LED structures for reduced non-radiative sidewall recombination

#6 | 2019-04-18
US20190115495A1
Electricity

LED structures for reduced non-radiative sidewall recombination

#7 | 2018-12-27
US20180374991A1
Electricity

LED sidewall processing to mitigate non-radiative recombination

#8 | 2018-07-26
US20180212097A1
Electricity

Light emitting diode with displaced P-type doping

#9 | 2018-07-05
US20180190789A1
Electricity

Method and system for in-situ etch and regrowth in gallium nitride based devices

#10 | 2018-04-05
US20180097145A1
Electricity

LED structures for reduced non-radiative sidewall recombination

#11 | 2018-01-18
US20180019117A1
Electricity

Methods for high growth rate deposition for forming different cells on a wafer

#12 | 2017-06-15
US20170170360A1
Electricity

LED structures for reduced non-radiative sidewall recombination

#13 | 2016-10-27
US20160315218A1
Electricity

LED structures for reduced non-radiative sidewall recombination

#14 | 2016-07-07
US20160197232A1
Electricity

LED structures for reduced non-radiative sidewall recombination

#15 | 2016-06-30
US20160190351A1
Electricity

METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE

#16 | 2016-06-30
US20160190296A1
Electricity

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING AN ALUMINUM GALLIUM NITRIDE BARRIER LAYER

#17 | 2016-06-30
US20160190276A1
Electricity

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE BASED DEVICES

#18 | 2016-02-11
US20160043198A1
Electricity

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

#19 | 2016-02-11
US20160043182A1
Electricity

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS

#20 | 2015-11-26
US20150340476A1
Electricity

Method and system for planar regrowth in GaN electronic devices

#21 | 2015-11-12
US20150325677A1
Electricity

METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NITRIDE BASED ELECTRONICS

#22 | 2015-09-17
US20150263222A1
Electricity

Transfer chamber metrology for improved device yield

#23 | 2015-08-27
US20150243758A1
Electricity

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR

#24 | 2015-07-16
US20150200268A1
Electricity

Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back

#25 | 2015-07-16
US20150200097A1
Electricity

Edge termination by ion implantation in gallium nitride

#26 | 2015-06-25
US20150179772A1
Electricity

Method and system for a gallium nitride self-aligned vertical MESFET

#27 | 2015-06-25
US20150179733A1
Electricity

Schottky diode with buried layer in GaN materials

#28 | 2015-06-04
US20150155372A1
Electricity

Method and system for doping control in gallium nitride based devices

#29 | 2015-05-21
US20150140746A1
Electricity

Monolithically integrated vertical JFET and Schottky diode

#30 | 2015-05-14
US20150132899A1
Electricity

Method and system for a GaN vertical JFET utilizing a regrown channel

#31 | 2015-05-07
US20150123138A1
Electricity

High power gallium nitride electronics using miscut substrates

#32 | 2015-01-15
US20150017792A1
Electricity

Method and system for diffusion and implantation in gallium nitride based devices

#33 | 2014-12-25
US20140374769A1
Electricity

GaN-based Schottky barrier diode with algan surface layer

#34 | 2014-09-25
US20140287570A1
Electricity

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode

#35 | 2014-08-21
US20140235030A1
Electricity

Method and system for fabricating floating guard rings in GaN materials

#36 | 2014-07-10
US20140191242A1
Electricity

Method and system for a gallium nitride vertical transistor

#37 | 2014-06-12
US20140162416A1
Electricity

Aluminum gallium nitride etch stop layer for gallium nitride based devices

#38 | 2014-06-12
US20140159051A1
Electricity

Monolithically integrated vertical JFET and Schottky diode

#39 | 2014-05-29
US20140145201A1
Electricity

METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED GATE AND SOURCE

#40 | 2014-05-01
US20140116328A1
Electricity

Method and system for carbon doping control in gallium nitride based devices

#41 | 2014-02-20
US20140051236A1
Electricity

GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE

#42 | 2014-02-20
US20140048902A1
Electricity

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back

#43 | 2014-02-13
US20140045306A1
Electricity

Method and system for in-situ etch and regrowth in gallium nitride based devices

#44 | 2013-11-07
US20130292686A1
Electricity

Method and system for planar regrowth in GAN electronic devices

#45 | 2013-06-27
US20130164893A1
Electricity

Fabrication of floating guard rings using selective regrowth

#46 | 2013-06-27
US20130161635A1
Electricity

Method and system for a GaN self-aligned vertical MESFET

#47 | 2013-06-06
US20130143392A1
Electricity

IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES

#48 | 2013-05-30
US20130137225A1
Electricity

Method and system for carbon doping control in gallium nitride based devices

#49 | 2013-05-23
US20130127006A1
Electricity

GaN-based Schottky barrier diode with field plate

#50 | 2013-05-23
US20130126886A1
Electricity

Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer

#51 | 2013-05-23
US20130126885A1
Electricity

Method and system for fabricating floating guard rings in GaN materials

#52 | 2013-05-23
US20130126884A1
Electricity

Aluminum gallium nitride etch stop layer for gallium nitride based devices

#53 | 2013-05-09
US20130112985A1
Electricity

Monolithically integrated vertical JFET and Schottky diode

#54 | 2013-04-11
US20130087879A1
Electricity

Schottky diode with buried layer in GaN materials

#55 | 2013-04-11
US20130087878A1
Electricity

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode

#56 | 2013-04-11
US20130087835A1
Electricity

Method and system for floating guard rings in gallium nitride materials

#57 | 2013-04-11
US20130087803A1
Electricity

MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE

#58 | 2013-03-28
US20130075748A1
Electricity

Method and system for diffusion and implantation in gallium nitride based devices

#59 | 2013-03-07
US20130056743A1
Electricity

Method and system for local control of defect density in gallium nitride based electronics

#60 | 2013-02-07
US20130032814A1
Electricity

Method and system for formation of P-N junctions in gallium nitride based electronics

#61 | 2013-02-07
US20130032813A1
Electricity

Method and system for doping control in gallium nitride based devices

#62 | 2013-02-07
US20130032812A1
Electricity

Method and system for a GaN vertical JFET utilizing a regrown channel

#63 | 2013-02-07
US20130032811A1
Electricity

Method and system for a GAN vertical JFET utilizing a regrown gate

#64 | 2013-01-17
US20130015552A1
Electricity

Electrical Isolation Of High Defect Density Regions In A Semiconductor Device

#65 | 2012-12-06
US20120309172A1
Electricity

Epitaxial Lift-Off and Wafer Reuse

#66 | 2012-10-04
US20120248577A1
Electricity

Controlled Doping in III-V Materials

#67 | 2012-05-17
US20120118224A1
Electricity

Transfer chamber metrology for improved device yield

#68 | 2011-11-03
US20110268880A1
Chemistry; metallurgy

Reactor clean

#69 | 2011-04-14
US20110083601A1
Chemistry; metallurgy

Method of high growth rate deposition for group III/V materials

#70 | 2011-03-03
US20110051768A1
Electricity

Semiconductor light emitting devices with non-epitaxial upper cladding

#71 | 2011-02-17
US20110039360A1
Electricity

Selective decomposition of nitride semiconductors to enhance LED light extraction

#72 | 2010-06-17
US20100151602A1
Electricity

Laser roughening to improve LED emissions

#73 | 2010-06-17
US20100148197A1
Electricity

Selective decomposition of nitride semiconductors to enhance LED light extraction

#74 | 2010-06-17
US20100148147A1
Electricity

MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING SELECTIVE AREA GROWTH

#75 | 2010-06-17
US20100148146A1
Electricity

Monolithic white and full-color light emitting diodes using optically pumped multiple quantum wells

#76 | 2010-05-27
US20100127236A1
Electricity

Laser diode with high indium active layer and lattice matched cladding layer

#77 | 2010-03-25
US20100074292A1
Electricity

Semiconductor light emitting devices with non-epitaxial upper cladding

#78 | 2010-03-11
US20100063753A1
Chemistry; metallurgy

Integrated vapor delivery systems for chemical vapor deposition precursors

#79 | 2010-01-14
US20100006023A1
Chemistry; metallurgy

Method For Preparing Films And Devices Under High Nitrogen Chemical Potential

#80 | 2009-07-16
US20090179229A1
Electricity

Ohmic contact on p-type GaN

#81 | 2009-05-21
US20090129426A1
Performing operations; transporting

Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth

#82 | 2009-04-09
US20090090932A1
Electricity

Nitride semiconductor ultraviolet LEDs with tunnel junctions and reflective contact

#83 | 2009-03-12
US20090068778A1
Electricity

Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD

#84 | 2008-11-13
US20080279242A1
Electricity

Photonic crystal structures and methods of making and using photonic crystal structures

#85 | 2007-10-18
US20070241322A1
Performing operations; transporting

Long Wavelength Induim Arsenide Phosphide (InAsP) Quantum Well Active Region And Method For Producing Same

#86 | 2007-10-02
US10230895
-

Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same

#87 | 2007-04-26
US20070091951A1
Electricity

Gain-coupled distributed quantum cascade laser

#88 | 2007-03-29
US20070069380A1
Electricity

Ohmic contact on p-type GaN

#89 | 2007-03-15
US20070057270A1
Electricity

GaN laser with refractory metal ELOG masks for intracavity contact

#90 | 2007-02-22
US20070041419A1
Performing operations; transporting

Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth

#91 | 2007-02-15
US20070036186A1
Electricity

Nitride semiconductor vertical cavity surface emitting laser

#92 | 2007-02-15
US20070034853A1
Electricity

Structures for reducing operating voltage in a semiconductor device

#93 | 2007-02-08
US20070030870A1
Electricity

Method and structure for ridge waveguide quantum cascade laser with p-type overgrowth

#94 | 2007-01-25
US20070019697A1
Performing operations; transporting

VCSEL system with transverse P/N junction

#95 | 2006-12-21
US20060284163A1
Electricity

Single ELOG growth transverse p-n junction nitride semiconductor laser

#96 | 2006-12-14
US20060279828A1
Performing operations; transporting

Deep quantum well electro-absorption modulator

#97 | 2006-11-30
US20060269183A1
Performing operations; transporting

Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability

#98 | 2006-11-28
US10453376
-

Electroabsorption modulator

#99 | 2006-11-23
US20060262243A1
Physics

Display system and method using a solid state laser

#100 | 2006-10-17
US10394559
-

Nitride-based laser diode with GaN waveguide/cladding layer

InventorID:

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