Cupertino, California
United States
114
2024-07-25
The entities that hold a legal rights for patent applications filed by inventor Bour David P.:
David P. Bour from Cupertino, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Plug Regrowth for Micro LED Uniformity and Efficiency Improvement
#2 | 2024-07-25Regrowth Structures for Micro LED
#3 | 2020-05-21Light emitting diode with displaced P-type doping
#4 | 2020-02-13LED sidewall processing to mitigate non-radiative recombination
#5 | 2019-12-05LED structures for reduced non-radiative sidewall recombination
#6 | 2019-04-18LED structures for reduced non-radiative sidewall recombination
#7 | 2018-12-27LED sidewall processing to mitigate non-radiative recombination
#8 | 2018-07-26Light emitting diode with displaced P-type doping
#9 | 2018-07-05Method and system for in-situ etch and regrowth in gallium nitride based devices
#10 | 2018-04-05LED structures for reduced non-radiative sidewall recombination
#11 | 2018-01-18Methods for high growth rate deposition for forming different cells on a wafer
#12 | 2017-06-15LED structures for reduced non-radiative sidewall recombination
#13 | 2016-10-27LED structures for reduced non-radiative sidewall recombination
#14 | 2016-07-07LED structures for reduced non-radiative sidewall recombination
#15 | 2016-06-30METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE
#16 | 2016-06-30GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING AN ALUMINUM GALLIUM NITRIDE BARRIER LAYER
#17 | 2016-06-30METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE BASED DEVICES
#18 | 2016-02-11SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
#19 | 2016-02-11METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
#20 | 2015-11-26Method and system for planar regrowth in GaN electronic devices
#21 | 2015-11-12METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NITRIDE BASED ELECTRONICS
#22 | 2015-09-17Transfer chamber metrology for improved device yield
#23 | 2015-08-27METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
#24 | 2015-07-16Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back
#25 | 2015-07-16Edge termination by ion implantation in gallium nitride
#26 | 2015-06-25Method and system for a gallium nitride self-aligned vertical MESFET
#27 | 2015-06-25Schottky diode with buried layer in GaN materials
#28 | 2015-06-04Method and system for doping control in gallium nitride based devices
#29 | 2015-05-21Monolithically integrated vertical JFET and Schottky diode
#30 | 2015-05-14Method and system for a GaN vertical JFET utilizing a regrown channel
#31 | 2015-05-07High power gallium nitride electronics using miscut substrates
#32 | 2015-01-15Method and system for diffusion and implantation in gallium nitride based devices
#33 | 2014-12-25GaN-based Schottky barrier diode with algan surface layer
#34 | 2014-09-25Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
#35 | 2014-08-21Method and system for fabricating floating guard rings in GaN materials
#36 | 2014-07-10Method and system for a gallium nitride vertical transistor
#37 | 2014-06-12Aluminum gallium nitride etch stop layer for gallium nitride based devices
#38 | 2014-06-12Monolithically integrated vertical JFET and Schottky diode
#39 | 2014-05-29METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED GATE AND SOURCE
#40 | 2014-05-01Method and system for carbon doping control in gallium nitride based devices
#41 | 2014-02-20GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
#42 | 2014-02-20Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back
#43 | 2014-02-13Method and system for in-situ etch and regrowth in gallium nitride based devices
#44 | 2013-11-07Method and system for planar regrowth in GAN electronic devices
#45 | 2013-06-27Fabrication of floating guard rings using selective regrowth
#46 | 2013-06-27Method and system for a GaN self-aligned vertical MESFET
#47 | 2013-06-06IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES
#48 | 2013-05-30Method and system for carbon doping control in gallium nitride based devices
#49 | 2013-05-23GaN-based Schottky barrier diode with field plate
#50 | 2013-05-23Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer
#51 | 2013-05-23Method and system for fabricating floating guard rings in GaN materials
#52 | 2013-05-23Aluminum gallium nitride etch stop layer for gallium nitride based devices
#53 | 2013-05-09Monolithically integrated vertical JFET and Schottky diode
#54 | 2013-04-11Schottky diode with buried layer in GaN materials
#55 | 2013-04-11Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
#56 | 2013-04-11Method and system for floating guard rings in gallium nitride materials
#57 | 2013-04-11MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE
#58 | 2013-03-28Method and system for diffusion and implantation in gallium nitride based devices
#59 | 2013-03-07Method and system for local control of defect density in gallium nitride based electronics
#60 | 2013-02-07Method and system for formation of P-N junctions in gallium nitride based electronics
#61 | 2013-02-07Method and system for doping control in gallium nitride based devices
#62 | 2013-02-07Method and system for a GaN vertical JFET utilizing a regrown channel
#63 | 2013-02-07Method and system for a GAN vertical JFET utilizing a regrown gate
#64 | 2013-01-17Electrical Isolation Of High Defect Density Regions In A Semiconductor Device
#65 | 2012-12-06Epitaxial Lift-Off and Wafer Reuse
#66 | 2012-10-04Controlled Doping in III-V Materials
#67 | 2012-05-17Transfer chamber metrology for improved device yield
#68 | 2011-11-03Reactor clean
#69 | 2011-04-14Method of high growth rate deposition for group III/V materials
#70 | 2011-03-03Semiconductor light emitting devices with non-epitaxial upper cladding
#71 | 2011-02-17Selective decomposition of nitride semiconductors to enhance LED light extraction
#72 | 2010-06-17Laser roughening to improve LED emissions
#73 | 2010-06-17Selective decomposition of nitride semiconductors to enhance LED light extraction
#74 | 2010-06-17MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING SELECTIVE AREA GROWTH
#75 | 2010-06-17Monolithic white and full-color light emitting diodes using optically pumped multiple quantum wells
#76 | 2010-05-27Laser diode with high indium active layer and lattice matched cladding layer
#77 | 2010-03-25Semiconductor light emitting devices with non-epitaxial upper cladding
#78 | 2010-03-11Integrated vapor delivery systems for chemical vapor deposition precursors
#79 | 2010-01-14Method For Preparing Films And Devices Under High Nitrogen Chemical Potential
#80 | 2009-07-16Ohmic contact on p-type GaN
#81 | 2009-05-21Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
#82 | 2009-04-09Nitride semiconductor ultraviolet LEDs with tunnel junctions and reflective contact
#83 | 2009-03-12Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD
#84 | 2008-11-13Photonic crystal structures and methods of making and using photonic crystal structures
#85 | 2007-10-18Long Wavelength Induim Arsenide Phosphide (InAsP) Quantum Well Active Region And Method For Producing Same
#86 | 2007-10-02Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same
#87 | 2007-04-26Gain-coupled distributed quantum cascade laser
#88 | 2007-03-29Ohmic contact on p-type GaN
#89 | 2007-03-15GaN laser with refractory metal ELOG masks for intracavity contact
#90 | 2007-02-22Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth
#91 | 2007-02-15Nitride semiconductor vertical cavity surface emitting laser
#92 | 2007-02-15Structures for reducing operating voltage in a semiconductor device
#93 | 2007-02-08Method and structure for ridge waveguide quantum cascade laser with p-type overgrowth
#94 | 2007-01-25VCSEL system with transverse P/N junction
#95 | 2006-12-21Single ELOG growth transverse p-n junction nitride semiconductor laser
#96 | 2006-12-14Deep quantum well electro-absorption modulator
#97 | 2006-11-30Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability
#98 | 2006-11-28Electroabsorption modulator
#99 | 2006-11-23Display system and method using a solid state laser
#100 | 2006-10-17Nitride-based laser diode with GaN waveguide/cladding layer
36834 ⎘