David Bour

Vertical GaN-based metal insulator semiconductor FET

Edge termination by ion implantation in GaN

ENHANCED MAGNESIUM INCORPORATION INTO GALLIUM NITRIDE FILMS THROUGH HIGH PRESSURE OR ALD-TYPE PROCESSING

MOCVD FABRICATION OF GROUP III-NITRIDE MATERIALS USING IN-SITU GENERATED HYDRAZINE OR FRAGMENTS THERE FROM

PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATERIALS

GROWTH OF III-V LED STACKS USING NANO MASKS

SUBSTRATE CARRIER WITH MULTIPLE EMISSIVITY COEFFICIENTS FOR THIN FILM PROCESSING

INTEGRATION OF CLUSTER MOCVD AND HVPE REACTORS WITH OTHER PROCESS CHAMBERS

GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE

p-GaN Fabrication Process Utilizing a Dedicated Chamber and Method of Minimizing Magnesium Redistribution for Sharper Decay Profile

Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas

CLOSED LOOP MOCVD DEPOSITION CONTROL

GROWTH OF MULTI-JUNCTION LED FILM STACKS WITH MULTI-CHAMBERED EPITAXY SYSTEM

EPITAXIAL GROWTH OF COMPOUND NITRIDE SEMICONDUCTOR STRUCTURES

MULTI-GAS CONCENTRIC INJECTION SHOWERHEAD

NITRIDE OPTOELECTRONIC DEVICES WITH BACKSIDE DEPOSITION

STRESS MEASUREMENTS DURING LARGE-MISMATCH EPITAXIAL PROCESSES

Stress measurement and stress balance in films

System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus

IN-SITU DETECTION OF GAS-PHASE PARTICLE FORMATION IN NITRIDE FILM DEPOSITION

SUBSTRATE SUPPORT STRUCTURE WITH RAPID TEMPERATURE CHANGE

Hotwall reactor and method for reducing particle formation in GaN MOCVD

Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films

Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE

Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films

UV activation of NH3 for III-N deposition

Buffer-layer treatment of MOCVD-grown nitride structures

Nitride optoelectronic devices with backside deposition

MOCVD reactor without metalorganic-source temperature control

MOCVD reactor with concentration-monitor feedback

Dual-side epitaxy processes for production of nitride semiconductor structures

Stacked-substrate processes for production of nitride semiconductor structures

Double-sided nitride structures

Epitaxial growth of compound nitride semiconductor structures

Laser employing a zinc-doped tunnel-junction