San Jose, California
United States
87
2016-01-07
75
2016-12-20
These are the the leading inventors for applications assigned to AVOGY, INC.:
AVOGY, INC. based in San Jose, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer
#2 | 2015-12-17 ✅ Patent 9,484,470 granted on 2016-11-01Method of fabricating a GaN P-i-N diode using implantation
#3 | 2015-11-26METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALIGNED SOURCE AND GATE
#4 | 2015-11-26 ✅ Patent 9,502,544 granted on 2016-11-22Method and system for planar regrowth in GaN electronic devices
#5 | 2015-11-26GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PROTECTED LATERAL CHANNEL
#6 | 2015-11-26 ✅ Patent 9,324,607 granted on 2016-04-26GaN power device with solderable back metal
#7 | 2015-11-12 ✅ Patent 9,369,059 granted on 2016-06-14AC-DC converter for wide range output voltage and high switching frequency
#8 | 2015-11-12METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NITRIDE BASED ELECTRONICS
#9 | 2015-09-17ADAPTIVE SYNCHRONOUS SWITCHING IN A RESONANT CONVERTER
#10 | 2015-09-17RESONANT CONVERTER AND CONTROL
#11 | 2015-09-10 ✅ Patent 9,508,838 granted on 2016-11-29InGaN ohmic source contacts for vertical power devices
#12 | 2015-08-27METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
#13 | 2015-07-16 ✅ Patent 9,397,186 granted on 2016-07-19Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back
#14 | 2015-07-16 ✅ Patent 9,330,918 granted on 2016-05-03Edge termination by ion implantation in gallium nitride
#15 | 2015-06-25 ✅ Patent 9,269,793 granted on 2016-02-23Method and system for a gallium nitride self-aligned vertical MESFET
#16 | 2015-06-25 ✅ Patent 9,196,679 granted on 2015-11-24Schottky diode with buried layer in GaN materials
#17 | 2015-06-04 ✅ Patent 9,531,256 granted on 2016-12-27AC-DC converter with adjustable output
#18 | 2015-06-04 ✅ Patent 9,287,389 granted on 2016-03-15Method and system for doping control in gallium nitride based devices
#19 | 2015-05-21 ✅ Patent 9,171,937 granted on 2015-10-27Monolithically integrated vertical JFET and Schottky diode
#20 | 2015-05-21 ✅ Patent 9,318,619 granted on 2016-04-19Vertical gallium nitride JFET with gate and source electrodes on regrown gate
#21 | 2015-05-21 ✅ Patent 9,324,809 granted on 2016-04-26Method and system for interleaved boost converter with co-packaged gallium nitride power devices
#22 | 2015-05-14 ✅ Patent 9,391,179 granted on 2016-07-12Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance
#23 | 2015-05-14 ✅ Patent 9,324,844 granted on 2016-04-26Method and system for a GaN vertical JFET utilizing a regrown channel
#24 | 2015-05-14 ✅ Patent 9,123,799 granted on 2015-09-01Gallium nitride field effect transistor with buried field plate protected lateral channel
#25 | 2015-05-07 ✅ Patent 9,368,582 granted on 2016-06-14High power gallium nitride electronics using miscut substrates
#26 | 2015-04-16 ✅ Patent 9,257,500 granted on 2016-02-09Vertical gallium nitride power device with breakdown voltage control
#27 | 2015-02-03 ✅ Patent 8,947,154 granted on 2015-02-03Method and system for operating gallium nitride electronics
#28 | 2015-01-15 ✅ Patent 9,318,331 granted on 2016-04-19Method and system for diffusion and implantation in gallium nitride based devices
#29 | 2014-12-25 ✅ Patent 9,450,112 granted on 2016-09-20GaN-based Schottky barrier diode with algan surface layer
#30 | 2014-12-18 ✅ Patent 9,117,850 granted on 2015-08-25Method and system for a gallium nitride vertical JFET with self-aligned source and gate
#31 | 2014-11-27 ✅ Patent 9,171,900 granted on 2015-10-27Method of fabricating a gallium nitride P-i-N diode using implantation
#32 | 2014-11-27 ✅ Patent 9,324,645 granted on 2016-04-26Method and system for co-packaging vertical gallium nitride power devices
#33 | 2014-10-23 ✅ Patent 9,159,799 granted on 2015-10-13Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer
#34 | 2014-10-02 ✅ Patent 9,029,210 granted on 2015-05-12GaN vertical superjunction device structures and fabrication methods
#35 | 2014-10-02 ✅ Patent 8,946,725 granted on 2015-02-03Vertical gallium nitride JFET with gate and source electrodes on regrown gate
#36 | 2014-09-25 ✅ Patent 9,171,923 granted on 2015-10-27Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
#37 | 2014-08-21 ✅ Patent 9,171,751 granted on 2015-10-27Method and system for fabricating floating guard rings in GaN materials
#38 | 2014-07-24 ✅ Patent 8,969,180 granted on 2015-03-03Method and system for junction termination in GaN materials using conductivity modulation
#39 | 2014-07-24METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALIGNED GATE METALLIZATION
#40 | 2014-07-10 ✅ Patent 9,059,199 granted on 2015-06-16Method and system for a gallium nitride vertical transistor
#41 | 2014-07-10GALLIUM NITRIDE VERTICAL JFET WITH HEXAGONAL CELL STRUCTURE
#42 | 2014-07-03HIGH POWER DENSITY OFF-LINE POWER SUPPLY
#43 | 2014-07-03 ✅ Patent 8,937,317 granted on 2015-01-20Method and system for co-packaging gallium nitride electronics
#44 | 2014-06-26 ✅ Patent 8,866,148 granted on 2014-10-21Vertical GaN power device with breakdown voltage control
#45 | 2014-06-12 ✅ Patent 9,093,284 granted on 2015-07-28Aluminum gallium nitride etch stop layer for gallium nitride based devices
#46 | 2014-06-12 ✅ Patent 8,941,117 granted on 2015-01-27Monolithically integrated vertical JFET and Schottky diode
#47 | 2014-06-05 ✅ Patent 9,089,083 granted on 2015-07-21AC-DC converter for wide range output voltage and high switching frequency
#48 | 2014-05-29METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED GATE AND SOURCE
#49 | 2014-05-15 ✅ Patent 8,823,140 granted on 2014-09-02GaN vertical bipolar transistor
#50 | 2014-05-15 ✅ Patent 8,969,926 granted on 2015-03-03Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance
#51 | 2014-05-15 ✅ Patent 9,472,684 granted on 2016-10-18Lateral GaN JFET with vertical drift region
#52 | 2014-05-01 ✅ Patent 8,853,063 granted on 2014-10-07Method and system for carbon doping control in gallium nitride based devices
#53 | 2014-03-13 ✅ Patent 8,916,871 granted on 2014-12-23Bondable top metal contacts for gallium nitride power devices
#54 | 2014-02-20GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
#55 | 2014-02-20METHOD AND SYSTEM FOR EDGE TERMINATION IN GAN MATERIALS BY SELECTIVE AREA IMPLANTATION DOPING
#56 | 2014-02-20 ✅ Patent 8,969,994 granted on 2015-03-03Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back
#57 | 2014-02-13 ✅ Patent 9,123,533 granted on 2015-09-01Method and system for in-situ etch and regrowth in gallium nitride based devices
#58 | 2014-02-13 ✅ Patent 8,981,432 granted on 2015-03-17Method and system for gallium nitride electronic devices using engineered substrates
#59 | 2014-01-23 ✅ Patent 9,105,579 granted on 2015-08-11GaN power device with solderable back metal
#60 | 2013-12-26 ✅ Patent 8,785,975 granted on 2014-07-22GAN vertical superjunction device structures and fabrication methods
#61 | 2013-11-14 ✅ Patent 8,841,708 granted on 2014-09-23Method and system for a GAN vertical JFET with self-aligned source metallization
#62 | 2013-11-14 ✅ Patent 8,716,078 granted on 2014-05-06Method and system for a gallium nitride vertical JFET with self-aligned gate metallization
#63 | 2013-11-07 ✅ Patent 9,117,839 granted on 2015-08-25Method and system for planar regrowth in GAN electronic devices
#64 | 2013-06-27 ✅ Patent 8,592,298 granted on 2013-11-26Fabrication of floating guard rings using selective regrowth
#65 | 2013-06-27 ✅ Patent 8,822,311 granted on 2014-09-02Method of fabricating a GaN P-i-N diode using implantation
#66 | 2013-06-27 ✅ Patent 8,829,574 granted on 2014-09-09Method and system for a GaN vertical JFET with self-aligned source and gate
#67 | 2013-06-27 ✅ Patent 8,866,147 granted on 2014-10-21Method and system for a GaN self-aligned vertical MESFET
#68 | 2013-06-27 ✅ Patent 8,741,707 granted on 2014-06-03Method and system for fabricating edge termination structures in GaN materials
#69 | 2013-06-27 ✅ Patent 8,716,716 granted on 2014-05-06Method and system for junction termination in GaN materials using conductivity modulation
#70 | 2013-06-20 ✅ Patent 9,006,800 granted on 2015-04-14Ingan ohmic source contacts for vertical power devices
#71 | 2013-06-13 ✅ Patent 8,698,164 granted on 2014-04-15Vertical GaN JFET with gate source electrodes on regrown gate
#72 | 2013-06-13 ✅ Patent 8,558,242 granted on 2013-10-15Vertical GaN-based metal insulator semiconductor FET
#73 | 2013-05-30 ✅ Patent 8,569,153 granted on 2013-10-29Method and system for carbon doping control in gallium nitride based devices
#74 | 2013-05-23 ✅ Patent 8,592,938 granted on 2013-11-26GaN-based Schottky barrier diode with field plate
#75 | 2013-05-23 ✅ Patent 8,927,999 granted on 2015-01-06Edge termination by ion implantation in GaN
#76 | 2013-05-23 ✅ Patent 8,836,071 granted on 2014-09-16Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer
#77 | 2013-05-23 ✅ Patent 8,749,015 granted on 2014-06-10Method and system for fabricating floating guard rings in GaN materials
#78 | 2013-05-23 ✅ Patent 9,159,784 granted on 2015-10-13Aluminum gallium nitride etch stop layer for gallium nitride based devices
#79 | 2013-04-11 ✅ Patent 8,933,532 granted on 2015-01-13Schottky diode with buried layer in GaN materials
#80 | 2013-04-11 ✅ Patent 8,778,788 granted on 2014-07-15Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
#81 | 2013-04-11 ✅ Patent 9,224,828 granted on 2015-12-29Method and system for floating guard rings in gallium nitride materials
#82 | 2013-03-28 ✅ Patent 8,846,482 granted on 2014-09-30Method and system for diffusion and implantation in gallium nitride based devices
#83 | 2013-03-07 ✅ Patent 9,093,395 granted on 2015-07-28Method and system for local control of defect density in gallium nitride based electronics
#84 | 2013-02-07 ✅ Patent 9,136,116 granted on 2015-09-15Method and system for formation of P-N junctions in gallium nitride based electronics
#85 | 2013-02-07 ✅ Patent 8,946,788 granted on 2015-02-03Method and system for doping control in gallium nitride based devices
#86 | 2013-02-07 ✅ Patent 8,969,912 granted on 2015-03-03Method and system for a GaN vertical JFET utilizing a regrown channel
#87 | 2013-02-07 ✅ Patent 9,184,305 granted on 2015-11-10Method and system for a GAN vertical JFET utilizing a regrown gate
Also check out Avogy, Inc.'s (San Jose, United States) applicant profile with 41 patent applications submitted.
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