Jiangsu
China
31
2018-07-05
28
2020-10-27
These are the the leading inventors for applications assigned to CSMC TECHNOLOGIES FAB1 CO., LTD.:
CSMC TECHNOLOGIES FAB1 CO., LTD. based in Jiangsu, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Photolithography method and system based on high step slope
#2 | 2017-09-21N-TYPE LATERAL DOUBLE-DIFFUSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
#3 | 2017-07-20 ✅ Patent 10,301,175 granted on 2019-05-28Method for manufacturing MEMS double-layer suspension microstructure, and MEMS infrared detector
#4 | 2017-05-11 ✅ Patent 9,947,785 granted on 2018-04-17Junction field effect transistor and manufacturing method therefor
#5 | 2017-05-04 ✅ Patent 10,077,188 granted on 2018-09-18Manufacturing method of MEMS chip
#6 | 2017-03-09 ✅ Patent 10,003,890 granted on 2018-06-19MEMS microphone
#7 | 2016-12-22 ✅ Patent 9,954,431 granted on 2018-04-24Starting circuit of power management chip, and power management chip
#8 | 2016-12-22 ✅ Patent 9,666,682 granted on 2017-05-30Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method
#9 | 2016-12-22 ✅ Patent 9,553,164 granted on 2017-01-24Method for manufacturing IGBT
#10 | 2016-08-18 ✅ Patent 9,443,926 granted on 2016-09-13Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor
#11 | 2016-08-18 ✅ Patent 9,595,520 granted on 2017-03-14IGBT with built-in diode and manufacturing method therefor
#12 | 2016-08-11 ✅ Patent 10,056,867 granted on 2018-08-21Sensor control circuit and electronic apparatus
#13 | 2016-06-09 ✅ Patent 10,096,699 granted on 2018-10-09Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor
#14 | 2016-04-07 ✅ Patent 9,768,292 granted on 2017-09-19Laterally diffused metal oxide semiconductor device and manufacturing method therefor
#15 | 2015-11-19 ✅ Patent 9,728,472 granted on 2017-08-08Method for wafer etching in deep silicon trench etching process
#16 | 2015-08-20 ✅ Patent 9,903,884 granted on 2018-02-27Parallel plate capacitor and acceleration sensor comprising same
#17 | 2015-08-13 ✅ Patent 9,939,724 granted on 2018-04-10Photolithography method and system based on high step slope
#18 | 2015-07-30 ✅ Patent 9,601,336 granted on 2017-03-21Trench field-effect device and method of fabricating same
#19 | 2015-06-25 ✅ Patent 9,431,241 granted on 2016-08-30Method for manufacturing a silicon nitride thin film using plasma-enhanced chemical vapor deposition
#20 | 2015-06-25METHOD FOR FABRICATING MULTI-TRENCH STRUCTURE
#21 | 2015-06-11 ✅ Patent 9,202,790 granted on 2015-12-01Semiconductor device for ESD protection
#22 | 2015-06-04 ✅ Patent 9,607,851 granted on 2017-03-28Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure
#23 | 2015-06-04 ✅ Patent 9,580,301 granted on 2017-02-28MEMS chip and manufacturing method therefor
#24 | 2015-05-21 ✅ Patent 9,371,224 granted on 2016-06-21Silicon etching method
#25 | 2015-05-21 ✅ Patent 9,543,451 granted on 2017-01-10High voltage junction field effect transistor
#26 | 2014-11-06 ✅ Patent 8,956,972 granted on 2015-02-17Method for manufacturing semiconductor thick metal structure
#27 | 2014-08-21 ✅ Patent 9,391,133 granted on 2016-07-12Capacitor and preparation method thereof
#28 | 2014-06-19 ✅ Patent 9,960,047 granted on 2018-05-01Test pattern for trench poly over-etched step and formation method thereof
#29 | 2014-05-29 ✅ Patent 9,236,306 granted on 2016-01-12Method for manufacturing semiconductor device
#30 | 2014-05-29 ✅ Patent 8,957,494 granted on 2015-02-17High-voltage Schottky diode and manufacturing method thereof
#31 | 2012-07-12METHOD FOR FABRICATING TRENCH DMOS TRANSISTOR
Also check out CSMC Technologies Fab1 Co., Ltd.'s (Jiangsu, China) applicant profile with 32 patent applications submitted.
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