84143 ⎘
Manufacture or treatment of microstructural devices or systems; Treatments for avoiding stiction of elastic or moving parts of MEMS Roughening a surface
ROUGHNESS SELECTIVITY FOR MEMS MOVEMENT STICTION REDUCTION
#2SEMICONDUCTOR MEMS STRUCTURE AND METHOD OF FORMING THE SAME
#3Roughness selectivity for MEMS movement stiction reduction
#4Modification to rough polysilicon using ion implantation and silicide
#5Roughness selectivity for MEMS movement stiction reduction
#6Method for preparing silicon wafer with rough surface and silicon wafer
#7MEMS structure and manufacturing method thereof
#8Method for manufacturing a semiconductor on insulator type structure by layer transfer
#9MEMS apparatus with anti-stiction layer
#10Modification to rough polysilicon using ion implantation and silicide
#11Stiction reduction system and method thereof
#12Fence structure to prevent stiction in a MEMS motion sensor
#13Component especially for horology with surface topology and method for manufacturing the same
#14Rough layer for better anti-stiction deposition
#15Method of stiction prevention by patterned anti-stiction layer
#16MEMS microphone and method of manufacturing the same
#17Fence structure to prevent stiction in a MEMS motion sensor
#18Method of stiction prevention by patterned anti-stiction layer
#19Microelectromechanical system device and method for manufacturing the same
#20Capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
#21MEMS devices and processes
#22Rough MEMS surface
#23Rough layer for better anti-stiction deposition
#24Method for controlling surface roughness in MEMS structure
#25Silicon microphone with high-aspect-ratio corrugated diaphragm and a package with the same
#26METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT
#27Reducing MEMS stiction by increasing surface roughness
#28Reducing MEMS stiction by deposition of nanoclusters
#29Film induced interface roughening and method of producing the same
#30Methods for stiction reduction in MEMS sensors
#31Semiconductor devices and methods of forming thereof
#32Semiconductor devices and methods of forming thereof
#33Reducing MEMS stiction by deposition of nanoclusters
#34Micromechanical tunable Fabry-Perot interferometer, an intermediate product, and a method for producing the same
#35Bonded wafer substrate utilizing roughened surfaces for use in MEMS structures
#36MEMS devices with multi-component sacrificial layers
#37Apparatus for preventing stiction of MEMS microstructure
#38Display device with at least one movable stop element
#39Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
#40Method for fabricating nano-scale patterned surfaces
#41MEMS devices with multi-component sacrificial layers
#42Method of fabricating a bonded wafer substrate for use in MEMS structures
#43Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
#44MEMS DEVICES WITH PROTECTIVE COATINGS
#45Micromechanical component and manufacturing method
#46Process of forming and controlling rough interfaces
#47Surface roughening process
#48MEMS device with roughened surface and method of producing the same
#49Microstructure, semiconductor device, and manufacturing method of the microstructure
#50Methods for producing MEMS with protective coatings using multi-component sacrificial layers
#51Surface preparation for selective silicon fusion bonding
#52Method for separating a useful layer and component obtained by said method
#53Micro-electromechanical variable capacitor
#54Method for preparing silicon wafer with rough surface and silicon wafer