ClassID:

121250

C30B19/02 - CPC Classification

Classification description:

Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux

Sub-classes:
Recent Application in this class:
#1
20260132539
2026-05-14

GROUP III NITRIDE SINGLE CRYSTAL GROWTH METHOD

#2
20260132538
2026-05-14

MANUFACTURING METHOD OF GROUP-III NITRIDE SEMICONDUCTOR

#3
20260092394
2026-04-02

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

#4
20260078523
2026-03-19

METHOD OF GROWING GROUP III NITRIDE SINGLE CRYSTAL, JIG FOR USE IN GROWING GROUP III NITRIDE SINGLE CRYSTAL, AND APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL

#5
20260078522
2026-03-19

GROUP III NITRIDE SINGLE CRYSTAL GROWTH METHOD

#6
20250369153
2025-12-04

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

#7
20250320631
2025-10-16

SEED SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

#8
20250034750
2025-01-30

METAL OXIDE MANUFACTURING DEVICE AND METAL OXIDE MANUFACTURING METHOD

#9
20240401238
2024-12-05

LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE

#10
20240183069
2024-06-06

SINGLE-CRYSTAL DIAMOND AND DIAMOND COMPOSITE CONTAINING THE SAME

#11
20230399770
2023-12-14

GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL

#12
20230257902
2023-08-17

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

#13
20230119023
2023-04-20

FREE-STANDING SUBSTRATE FOR EPITAXIAL CRYSTAL GROWTH, AND FUNCTIONAL ELEMENT

#14
20220275532
2022-09-01

GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, SELF-SUPPORTING SUBSTRATE, AND FUNCTIONAL ELEMENT

#15
20220119984
2022-04-21

GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL

#16
20220081800
2022-03-17

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

#17
20210115591
2021-04-22

OPTICAL QUALITY DIAMOND MATERIAL

#18
20210013366
2021-01-14

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD OF PRODUCING GROUP 13 ELEMENT NITRIDE LAYER

#19
20200299857
2020-09-24

Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere

#20
20200263320
2020-08-20

Method for producing group III nitride crystal and seed substrate

#21
20200263317
2020-08-20

Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step

#22
20190360119
2019-11-28

Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities

#23
20190309439
2019-10-10

METHOD OF MANUFACTURING A GARNET TYPE CRYSTAL

#24
20190271096
2019-09-05

Production method for group III nitride crystal

#25
20190249328
2019-08-15

Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution

#26
20190088816
2019-03-21

Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device

#27
20190055669
2019-02-21

Optical quality diamond material

#28
20190027359
2019-01-24

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS

#29
20190003078
2019-01-03

Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

#30
20180351041
2018-12-06

Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same

#31
20180351038
2018-12-06

Polycrystalline gallium nitride self-supported substrate and light emitting element using same

#32
20180350918
2018-12-06

Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same

#33
20180274128
2018-09-27

Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities

#34
20180257993
2018-09-13

SiC crucible, SiC sintered body, and method of producing SiC single crystal

#35
20180247817
2018-08-30

Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements

#36
20180247810
2018-08-30

Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements

#37
20180247809
2018-08-30

Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements

#38
20180245235
2018-08-30

Silicon-based molten composition and manufacturing method of SiC single crystal using the same

#39
20180202069
2018-07-19

Lead oxychloride, infrared nonlinear optical crystal, and preparation method thereof

#40
20180202067
2018-07-19

Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis

#41
20180195202
2018-07-12

Epitaxial quartz homeotypes crystal growth on beta quartz for pressure sensors and accelerometers

#42
20180179665
2018-06-28

Oriented alumina substrate for epitaxial growth

#43
20180179664
2018-06-28

Oriented alumina substrate for epitaxial growth

#44
20180097142
2018-04-05

Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal

#45
20180066378
2018-03-08

Method for producing Group III nitride semiconductor including growing Group III nitride semiconductor through flux method

#46
20180038011
2018-02-08

Alumina substrate

#47
20180038010
2018-02-08

Method for manufacturing group-III nitride semiconductor crystal substrate

#48
20170372889
2017-12-28

Methods of producing seed crystal substrates and group 13 element nitride crystals, and seed crystal substrates

#49
20170330749
2017-11-16

Free-standing substrate, function element and method for producing same

#50
20170314156
2017-11-02

METHOD OF LIQUID-PHASE EPITAXIAL GROWTH OF LEAD ZIRCONATE TITANATE SINGLE CRYSTALS

#51
20170283983
2017-10-05

Method and device for producing a group 13 element nitride crystal using a shielding object

#52
20170275780
2017-09-28

Group III nitride substrate and method for producing group III nitride crystal

#53
20170268125
2017-09-21

Group 13 element nitride crystal layer and function element

#54
20170263815
2017-09-14

Group 13 element nitride crystal substrate and function element

#55
20170263810
2017-09-14

Method for separating group 13 element nitride layer, and composite substrate

#56
20170260648
2017-09-14

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND RAMO4-CONTAINING SUBSTRATE

#57
20170211204
2017-07-27

Alumina substrate

#58
20170191186
2017-07-06

Method for manufacturing nitride crystal substrate and substrate for crystal growth

#59
20170183794
2017-06-29

Optical quality diamond material

#60
20170077349
2017-03-16

Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same

#61
20170073840
2017-03-16

Process for producing group III nitride crystal and apparatus for producing group III nitride crystal

#62
20170073839
2017-03-16

Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal

#63
20160362815
2016-12-15

METHOD FOR PRODUCING N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, AND CRYSTAL SUBSTRATE

#64
20160348272
2016-12-01

Method for manufacturing group 13 nitride crystal and group 13 nitride crystal

#65
20160319457
2016-11-03

Crystalline gallium nitride containing flourine

#66
20160305041
2016-10-20

Preparation method and application of sodium barium fluoroborate birefringent crystal

#67
20160293800
2016-10-06

Composite substrate for light-emitting element and production method therefor

#68
20160244892
2016-08-25

Method for Crystallizing Group IV Semiconductor, and Film Forming Apparatus

#69
20160237590
2016-08-18

SiC single crystal and method for producing same

#70
20160233380
2016-08-11

GaN template substrate

#71
20160230308
2016-08-11

Method for growing GZO (ZnO:Ga) crystals

#72
20160197234
2016-07-07

Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same

#73
20160172541
2016-06-16

Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor

#74
20160168749
2016-06-16

Method for producing nitride of group-13 element, and melt composition

#75
20160160383
2016-06-09

Method for preparing single-crystal cubic sesquioxides and uses

#76
20160137515
2016-05-19

Li4Sr(BO3)2 compound, Li4Sr(BO3)2 nonlinear optical crystal, preparation method and use thereof

#77
20160130723
2016-05-12

Barium tetraborate compound and barium tetraborate non-linear optical crystal, and preparation method and use thereof

#78
20160108552
2016-04-21

Composite substrate, method for fabricating same, function element, and seed crystal substrate

#79
20160068993
2016-03-10

SiC single crystal and method for producing same

#80
20160049554
2016-02-18

Gallium nitride substrates and functional devices

#81
20150315723
2015-11-05

NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME

#82
20150292108
2015-10-15

Method for growing a bulk single crystal nitride material

#83
20150287884
2015-10-08

Seed crystal substrates, composite substrates and functional devices

#84
20150233015
2015-08-20

Method of liquid-phase epitaxial growth of lead zirconate titanate single crystals

#85
20150191849
2015-07-09

SiC single-crystal ingot, SiC single crystal, and production method for same

#86
20150144956
2015-05-28

Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor

#87
20150008563
2015-01-08

Composite of III-nitride crystal on laterally stacked substrates

#88
20140353682
2014-12-04

Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production

#89
20140328742
2014-11-06

Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device

#90
20140305369
2014-10-16

Method of producing crystals of nitrides of group 13 elements and melt compositions

#91
20140264429
2014-09-18

Composite substrates and functional devices

#92
20140261156
2014-09-18

Method of Forming a Crystallized Silicon Layer on the Surface of a Plurality of Substrates

#93
20140197420
2014-07-17

Films of nitrides of group 13 elements and layered body including the same

#94
20140116325
2014-05-01

Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus

#95
20140103362
2014-04-17

Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices

#96
20140070370
2014-03-13

Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

#97
20140021418
2014-01-23

Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device

#98
20130341672
2013-12-26

III nitride crystal substrate and light-emitting device

#99
20130305982
2013-11-21

Process for growing silicon carbide single crystal and device for the same

#100
20130220212
2013-08-29

Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere

#101
20130217564
2013-08-22

Method for synthesising diamond

#102
20130199438
2013-08-08

Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate

#103
20130186326
2013-07-25

Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature

#104
20130160699
2013-06-27

Method of manufacturing III-nitride crystal

#105
20130074762
2013-03-28

Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen

#106
20130071316
2013-03-21

Bi-substituted rare earth iron garnet single crystal, method of manufacturing the same, and optical device

#107
20130042802
2013-02-21

METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL

#108
20130011677
2013-01-10

GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD THEREOF

#109
20120315445
2012-12-13

Group-III nitride crystal composite

#110
20120273713
2012-11-01

Method for preparing single-crystal cubic sesquioxides and uses thereof

#111
20120211769
2012-08-23

SiC single crystal wafer and process for production thereof

#112
20120192787
2012-08-02

Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS

#113
20120168695
2012-07-05

Group-III element nitride crystal producing method and group-III element nitride crystal

#114
20120085279
2012-04-12

Crystal growth apparatus and manufacturing method of group III nitride crystal

#115
20120070962
2012-03-22

Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate

#116
20120064314
2012-03-15

MULTILAYER ZnO SINGLE CRYSTAL SCINTILLATOR AND METHOD FOR MANFACTURING THE SAME

#117
20120049137
2012-03-01

Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate

#118
20120017825
2012-01-26

Method of making a gallium nitride crystalline composition having a low dislocation density

#119
20120012984
2012-01-19

Method for growing group 13 nitride crystal and group 13 nitride crystal

#120
20120003446
2012-01-05

Nitride crystal and method for producing the same

#121
20110259261
2011-10-27

REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL

#122
20110215440
2011-09-08

Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device

#123
20110200833
2011-08-18

Method of manufacturing a silicon carbide single crystal

#124
20110198614
2011-08-18

Method and apparatus for manufacturing a SiC single crystal film

#125
20110155046
2011-06-30

Method for producing group III nitride semiconductor

#126
20110123425
2011-05-26

GaN whiskers and methods of growing them from solution

#127
20110024742
2011-02-03

PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL, SELF-SUPPORTING ZnO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL FOR USE IN THE SAME

#128
20110012070
2011-01-20

GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL

#129
20110011333
2011-01-20

APPARATUS FOR MANUFACTURING GROUP III NITRIDE CRYSTALS

#130
20100326350
2010-12-30

Magnetic garnet single crystal and optical element using same as well as method of producing single crystal

#131
20100301358
2010-12-02

Semiconductor substrate, electronic device, optical device, and production methods therefor

#132
20100260656
2010-10-14

Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same

#133
20100236472
2010-09-23

Method for growing silicon carbide single crystal

#134
20100230713
2010-09-16

Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate

#135
20100209686
2010-08-19

Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS

#136
20100192839
2010-08-05

Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal

#137
20100120187
2010-05-13

Production of a hexagonal boron nitride crystal body capable of emitting out ultraviolet radiation

#138
20100116197
2010-05-13

Optical quality diamond material

#139
20100093157
2010-04-15

Method for producing group III nitride-based compound semiconductor crystal

#140
20100078606
2010-04-01

PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-III ELEMENT NITRIDE CRYSTAL

#141
20100059717
2010-03-11

GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus

#142
20100012020
2010-01-21

Method for manufacturing nitride single crystal

#143
20090298265
2009-12-03

Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device

#144
20090267190
2009-10-29

Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate

#145
20090239753
2009-09-24

Method of manufacturing superconducting thin film material, superconducting device and superconducting thin film material

#146
20090236694
2009-09-24

Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal

#147
20090194017
2009-08-06

Method for producing p-type SiC semiconductor single crystal

#148
20090140287
2009-06-04

III nitride crystal substrate, and light-emitting device and method of its manufacture

#149
20090126623
2009-05-21

Apparatus for producing group III element nitride semiconductor and method for producing the semiconductor

#150
20090073549
2009-03-19

Magnetic garnet single crystal and Faraday rotator using the same

#151
20090044745
2009-02-19

Process for producing ZnO single crystal according to method of liquid phase growth

#152
20090000542
2009-01-01

Apparatus for producing nitride single crystal

#153
20090000540
2009-01-01

Liquid-phase growth apparatus and method

#154
20090000538
2009-01-01

Single crystal growing method

#155
20080282971
2008-11-20

Nitride single crystal manufacturing apparatus

#156
20080264331
2008-10-30

Manufacturing method and manufacturing apparatus of a group III nitride crystal

#157
20080229549
2008-09-25

Method of growing group III nitride crystals

#158
20080118648
2008-05-22

Method for the production of group III nitride bulk crystals or crystal layers from fused metals

#159
20080112046
2008-05-15

Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same

#160
20080095686
2008-04-24

Magnetic garnet single crystal and optical element using same as well as method of producing single crystal

#161
20080083905
2008-04-10

Cr-doped mixed alloy laser materials and lasers and methods using the materials

#162
20070215035
2007-09-20

Method for producing compound single crystal and production apparatus for use therein

#163
20070215033
2007-09-20

Method and apparatus for manufacturing group III nitride crystals

#164
20070209573
2007-09-13

Method for preparing silicon carbide single crystal

#165
20070209571
2007-09-13

Flux assisted solid phase epitaxy

#166
20070193506
2007-08-23

Method of producing optical element

#167
20070144427
2007-06-28

Method for producing AlN single crystal and AlN single crystal

#168
20070104639
2007-05-10

Method for manufacturing garnet single crystal and garnet single crystal manufactured thereby

#169
20070084399
2007-04-19

Crystal growth apparatus and manufacturing method of group III nitride crystal

#170
20070045597
2007-03-01

Cr-doped laser materials and lasers and methods of making and using

#171
20060292057
2006-12-28

Method of production of silicon carbide single crystal

#172
20060193358
2006-08-31

Tetravalent chromium doped laser materials and NIR tunable lasers

#173
20060187546
2006-08-24

Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same crucible for producing the same

#174
20060160336
2006-07-20

Silicon layer production method and solar cell production method

#175
20060112873
2006-06-01

Magnetic garnet single crystal film formation substrate, optical element and production method of the same

#176
20060054078
2006-03-16

Liquid-phase growth apparatus and method

#177
20060051942
2006-03-09

Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby

#178
20050164419
2005-07-28

Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device

#179
20050059229
2005-03-17

Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same

#180
13550050
2017-07-18

Growth of metal oxide single crystals from alkaline-earth metal fluxes