121250 ⎘
Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
Sub-classes:GROUP III NITRIDE SINGLE CRYSTAL GROWTH METHOD
#2MANUFACTURING METHOD OF GROUP-III NITRIDE SEMICONDUCTOR
#3METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR
#4METHOD OF GROWING GROUP III NITRIDE SINGLE CRYSTAL, JIG FOR USE IN GROWING GROUP III NITRIDE SINGLE CRYSTAL, AND APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL
#5GROUP III NITRIDE SINGLE CRYSTAL GROWTH METHOD
#6METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR
#7SEED SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
#8METAL OXIDE MANUFACTURING DEVICE AND METAL OXIDE MANUFACTURING METHOD
#9LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
#10SINGLE-CRYSTAL DIAMOND AND DIAMOND COMPOSITE CONTAINING THE SAME
#11GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL
#12METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
#13FREE-STANDING SUBSTRATE FOR EPITAXIAL CRYSTAL GROWTH, AND FUNCTIONAL ELEMENT
#14GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, SELF-SUPPORTING SUBSTRATE, AND FUNCTIONAL ELEMENT
#15GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL
#16METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
#17OPTICAL QUALITY DIAMOND MATERIAL
#18GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD OF PRODUCING GROUP 13 ELEMENT NITRIDE LAYER
#19Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere
#20Method for producing group III nitride crystal and seed substrate
#21Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step
#22Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#23METHOD OF MANUFACTURING A GARNET TYPE CRYSTAL
#24Production method for group III nitride crystal
#25Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution
#26Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device
#27Optical quality diamond material
#28EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS
#29Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
#30Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
#31Polycrystalline gallium nitride self-supported substrate and light emitting element using same
#32Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
#33Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#34SiC crucible, SiC sintered body, and method of producing SiC single crystal
#35Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#36Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#37Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#38Silicon-based molten composition and manufacturing method of SiC single crystal using the same
#39Lead oxychloride, infrared nonlinear optical crystal, and preparation method thereof
#40Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis
#41Epitaxial quartz homeotypes crystal growth on beta quartz for pressure sensors and accelerometers
#42Oriented alumina substrate for epitaxial growth
#43Oriented alumina substrate for epitaxial growth
#44Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal
#45Method for producing Group III nitride semiconductor including growing Group III nitride semiconductor through flux method
#46Alumina substrate
#47Method for manufacturing group-III nitride semiconductor crystal substrate
#48Methods of producing seed crystal substrates and group 13 element nitride crystals, and seed crystal substrates
#49Free-standing substrate, function element and method for producing same
#50METHOD OF LIQUID-PHASE EPITAXIAL GROWTH OF LEAD ZIRCONATE TITANATE SINGLE CRYSTALS
#51Method and device for producing a group 13 element nitride crystal using a shielding object
#52Group III nitride substrate and method for producing group III nitride crystal
#53Group 13 element nitride crystal layer and function element
#54Group 13 element nitride crystal substrate and function element
#55Method for separating group 13 element nitride layer, and composite substrate
#56METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND RAMO4-CONTAINING SUBSTRATE
#57Alumina substrate
#58Method for manufacturing nitride crystal substrate and substrate for crystal growth
#59Optical quality diamond material
#60Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same
#61Process for producing group III nitride crystal and apparatus for producing group III nitride crystal
#62Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal
#63METHOD FOR PRODUCING N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, AND CRYSTAL SUBSTRATE
#64Method for manufacturing group 13 nitride crystal and group 13 nitride crystal
#65Crystalline gallium nitride containing flourine
#66Preparation method and application of sodium barium fluoroborate birefringent crystal
#67Composite substrate for light-emitting element and production method therefor
#68Method for Crystallizing Group IV Semiconductor, and Film Forming Apparatus
#69SiC single crystal and method for producing same
#70GaN template substrate
#71Method for growing GZO (ZnO:Ga) crystals
#72Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same
#73Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor
#74Method for producing nitride of group-13 element, and melt composition
#75Method for preparing single-crystal cubic sesquioxides and uses
#76Li4Sr(BO3)2 compound, Li4Sr(BO3)2 nonlinear optical crystal, preparation method and use thereof
#77Barium tetraborate compound and barium tetraborate non-linear optical crystal, and preparation method and use thereof
#78Composite substrate, method for fabricating same, function element, and seed crystal substrate
#79SiC single crystal and method for producing same
#80Gallium nitride substrates and functional devices
#81NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME
#82Method for growing a bulk single crystal nitride material
#83Seed crystal substrates, composite substrates and functional devices
#84Method of liquid-phase epitaxial growth of lead zirconate titanate single crystals
#85SiC single-crystal ingot, SiC single crystal, and production method for same
#86Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor
#87Composite of III-nitride crystal on laterally stacked substrates
#88Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production
#89Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device
#90Method of producing crystals of nitrides of group 13 elements and melt compositions
#91Composite substrates and functional devices
#92Method of Forming a Crystallized Silicon Layer on the Surface of a Plurality of Substrates
#93Films of nitrides of group 13 elements and layered body including the same
#94Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus
#95Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices
#96Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device
#97Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device
#98III nitride crystal substrate and light-emitting device
#99Process for growing silicon carbide single crystal and device for the same
#100Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere
#101Method for synthesising diamond
#102Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate
#103Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature
#104Method of manufacturing III-nitride crystal
#105Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen
#106Bi-substituted rare earth iron garnet single crystal, method of manufacturing the same, and optical device
#107METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL
#108GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD THEREOF
#109Group-III nitride crystal composite
#110Method for preparing single-crystal cubic sesquioxides and uses thereof
#111SiC single crystal wafer and process for production thereof
#112Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS
#113Group-III element nitride crystal producing method and group-III element nitride crystal
#114Crystal growth apparatus and manufacturing method of group III nitride crystal
#115Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate
#116MULTILAYER ZnO SINGLE CRYSTAL SCINTILLATOR AND METHOD FOR MANFACTURING THE SAME
#117Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate
#118Method of making a gallium nitride crystalline composition having a low dislocation density
#119Method for growing group 13 nitride crystal and group 13 nitride crystal
#120Nitride crystal and method for producing the same
#121REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL
#122Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device
#123Method of manufacturing a silicon carbide single crystal
#124Method and apparatus for manufacturing a SiC single crystal film
#125Method for producing group III nitride semiconductor
#126GaN whiskers and methods of growing them from solution
#127PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL, SELF-SUPPORTING ZnO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL FOR USE IN THE SAME
#128GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL
#129APPARATUS FOR MANUFACTURING GROUP III NITRIDE CRYSTALS
#130Magnetic garnet single crystal and optical element using same as well as method of producing single crystal
#131Semiconductor substrate, electronic device, optical device, and production methods therefor
#132Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same
#133Method for growing silicon carbide single crystal
#134Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate
#135Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS
#136Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal
#137Production of a hexagonal boron nitride crystal body capable of emitting out ultraviolet radiation
#138Optical quality diamond material
#139Method for producing group III nitride-based compound semiconductor crystal
#140PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-III ELEMENT NITRIDE CRYSTAL
#141GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus
#142Method for manufacturing nitride single crystal
#143Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device
#144Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate
#145Method of manufacturing superconducting thin film material, superconducting device and superconducting thin film material
#146Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal
#147Method for producing p-type SiC semiconductor single crystal
#148III nitride crystal substrate, and light-emitting device and method of its manufacture
#149Apparatus for producing group III element nitride semiconductor and method for producing the semiconductor
#150Magnetic garnet single crystal and Faraday rotator using the same
#151Process for producing ZnO single crystal according to method of liquid phase growth
#152Apparatus for producing nitride single crystal
#153Liquid-phase growth apparatus and method
#154Single crystal growing method
#155Nitride single crystal manufacturing apparatus
#156Manufacturing method and manufacturing apparatus of a group III nitride crystal
#157Method of growing group III nitride crystals
#158Method for the production of group III nitride bulk crystals or crystal layers from fused metals
#159Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same
#160Magnetic garnet single crystal and optical element using same as well as method of producing single crystal
#161Cr-doped mixed alloy laser materials and lasers and methods using the materials
#162Method for producing compound single crystal and production apparatus for use therein
#163Method and apparatus for manufacturing group III nitride crystals
#164Method for preparing silicon carbide single crystal
#165Flux assisted solid phase epitaxy
#166Method of producing optical element
#167Method for producing AlN single crystal and AlN single crystal
#168Method for manufacturing garnet single crystal and garnet single crystal manufactured thereby
#169Crystal growth apparatus and manufacturing method of group III nitride crystal
#170Cr-doped laser materials and lasers and methods of making and using
#171Method of production of silicon carbide single crystal
#172Tetravalent chromium doped laser materials and NIR tunable lasers
#173Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same crucible for producing the same
#174Silicon layer production method and solar cell production method
#175Magnetic garnet single crystal film formation substrate, optical element and production method of the same
#176Liquid-phase growth apparatus and method
#177Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby
#178Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device
#179Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
#180Growth of metal oxide single crystals from alkaline-earth metal fluxes