ClassID:

121249

C30B19/00 - CPC Classification

Classification description:

Liquid-phase epitaxial-layer growth

Sub-classes:
Recent Application in this class:
#1
20250333643
2025-10-30

ORGANIC SEMICONDUCTOR FILM AND PREPARATION METHOD THEREOF

#2
20240407270
2024-12-05

ELECTRO-FORMED METAL FOILS

#3
20240229295
2024-07-11

SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME

#4
20240183068
2024-06-06

SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME

#5
20240175167
2024-05-30

SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME

#6
20240150935
2024-05-09

CHIRAL ORGANIC OPTOELECTRONIC MOLECULES WITH TUNABLE REFRACTIVE INDEX FOR IMPROVED CONTROL OF CIRCULARLY POLARIZED LIGHT PROPAGATION IN OPTICAL DEVICES

#7
20220045260
2022-02-10

Electro-formed metal foils

#8
20190345634
2019-11-14

Single-crystal perovskite solid solutions with indifferent points for epitaxial growth of single crystals

#9
20190309440
2019-10-10

FARADAY ROTATOR, OPTICAL ISOLATOR, AND METHOD OF MANUFACTURING FARADAY ROTATOR

#10
20190048488
2019-02-14

Solution deposition method for forming metal oxide or metal hydroxide layer

#11
20190003077
2019-01-03

Single-crystal perovskite solid solutions with indifferent points for epitaxial growth of single crystals

#12
20180097142
2018-04-05

Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal

#13
20170373153
2017-12-28

Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications

#14
20170370019
2017-12-28

SYNTHESIS AND PROCESSING OF PURE AND NV NANODIAMONDS AND OTHER NANOSTRUCTURES FOR QUANTUM COMPUTING AND MAGNETIC SENSING APPLICATIONS

#15
20170260643
2017-09-14

Solution deposition method for forming metal oxide or metal hydroxide layer

#16
20170186893
2017-06-29

Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

#17
20170167050
2017-06-15

Method for making epitaxial structure

#18
20170040168
2017-02-09

Methods and mask structures for substantially defect-free epitaxial growth

#19
20160284880
2016-09-29

Additive for preparing suede on monocrystalline silicon chip and use method thereof

#20
20160130719
2016-05-12

Solution deposition method for forming metal oxide or metal hydroxide layer

#21
20160111584
2016-04-21

Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

#22
20160060788
2016-03-03

Method of forming metal film

#23
20160049214
2016-02-18

Coupling between nanostructures and optical fibers

#24
20160042849
2016-02-11

Magnetic material including α″-Fe(NZ)or a mixture of α″-FeZand α″-FeN, where Z includes at least one of C, B, or O

#25
20160024688
2016-01-28

FABRICATION AND/OR APPLICATION OF ZINC OXIDE CRYSTALS WITH INTERNAL (INTRA-CRYSTALLINE) POROSITY

#26
20150056791
2015-02-26

Depression filling method and processing apparatus

#27
20140158041
2014-06-12

Method and device for fabricating a layer in semiconductor material

#28
20140113232
2014-04-24

Self-assemblable polymer and methods for use in lithography

#29
20140080081
2014-03-20

Heat exchangers in sapphire processing

#30
20140069325
2014-03-13

Pattern forming method

#31
20130344390
2013-12-26

Synthesis and applications of graphene based nanomaterials

#32
20130333613
2013-12-19

Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer

#33
20130285060
2013-10-31

Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

#34
20130269596
2013-10-17

Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph

#35
20130255566
2013-10-03

Method for making an epitaxial structure with carbon nanotube layer

#36
20130255565
2013-10-03

Method for making epitaxial structure

#37
20130233238
2013-09-12

Methods using mask structures for substantially defect-free epitaxial growth

#38
20130186326
2013-07-25

Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature

#39
20130118400
2013-05-16

METHOD OF FORMING EPITAXIAL ZINC OXIDE FILMS

#40
20110297893
2011-12-08

Production method of n-type SiC single crystal, n-type SiC single crystal obtained thereby and application of same

#41
20110260295
2011-10-27

III-nitride crystal substrate and III-nitride semiconductor device

#42
20110204483
2011-08-25

Electroluminescent device for the production of ultra-violet light

#43
20110123425
2011-05-26

GaN whiskers and methods of growing them from solution

#44
20110062466
2011-03-17

AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs

#45
20110049542
2011-03-03

AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs

#46
20110042706
2011-02-24

AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs

#47
20110024796
2011-02-03

Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device

#48
20100326350
2010-12-30

Magnetic garnet single crystal and optical element using same as well as method of producing single crystal

#49
20100308344
2010-12-09

Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystal

#50
20100289029
2010-11-18

Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device

#51
20100288188
2010-11-18

Method for growing silicon carbide single crystal

#52
20090315150
2009-12-24

III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device

#53
20090101062
2009-04-23

Method for producing silicon carbide single crystal

#54
20080095686
2008-04-24

Magnetic garnet single crystal and optical element using same as well as method of producing single crystal

#55
20070187700
2007-08-16

Method of manufacturing group III nitride substrate and semiconductor device

#56
20070175383
2007-08-02

Process for producing single crystal of gallium-containing nitride

#57
20070117336
2007-05-24

Minimizing degradation of SiC bipolar semiconductor devices

#58
20070031983
2007-02-08

Thin plate manufacturing method and thin plate manufacturing apparatus

#59
20060249073
2006-11-09

Method of heat treatment and heat treatment apparatus

#60
20060194418
2006-08-31

Smooth surface liquid phase epitaxial germanium

#61
20060194357
2006-08-31

High-density germanium-on-insulator photodiode array

#62
20060193358
2006-08-31

Tetravalent chromium doped laser materials and NIR tunable lasers

#63
20050239225
2005-10-27

Thin sheet production method and thin sheet production device

#64
20050118746
2005-06-02

Minimizing degradation of SiC bipolar semiconductor devices

#65
20050116234
2005-06-02

Minimizing degradation of SiC bipolar semiconductor devices

#66
20050076829
2005-04-14

Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus

#67
20050034756
2005-02-17

Method for forming a Si film, Si film and solar battery