121264 ⎘
Liquid-phase epitaxial-layer growth; Controlling or regulating adding crystallising material or reactants forming it to the liquid
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUID SOLID EPITAXY
#2CRYSTAL PREPARATION APPARATUS AND CRYSTAL PREPARATION METHOD
#3Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
#4METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE AND METHOD OF MANUFACTURING SOLAR CELL USING SINGLE CRYSTAL PEROVSKITE
#5High refractive index organic solid crystal with controlled surface roughness
#6Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
#7Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
#8Liquid phase epitaxy of III-V materials and alloys
#9Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film
#10METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
#11METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL
#12PRECIPITATION PROCESS FOR PRODUCING PEROVSKITE-BASED SOLAR CELLS
#13SiC single crystal and method for producing same
#14Layered platinum on freestanding palladium nano-substrates for electrocatalytic applications and methods of making thereof
#15Method for producing SiC single crystal
#16SiC single crystal and method for producing same
#17Method for producing an n-type SiC single crystal from a Si—C solution comprising a nitride
#18Crystal growth apparatus and manufacturing method of group III nitride crystal
#19Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements
#20Crystal growth apparatus and manufacturing method of group III nitride crystal