ClassID:

121265

C30B19/12 - CPC Classification

Classification description:

Liquid-phase epitaxial-layer growth characterised by the substrate

Recent Application in this class:
#1
20260132539
2026-05-14

GROUP III NITRIDE SINGLE CRYSTAL GROWTH METHOD

#2
20260078523
2026-03-19

METHOD OF GROWING GROUP III NITRIDE SINGLE CRYSTAL, JIG FOR USE IN GROWING GROUP III NITRIDE SINGLE CRYSTAL, AND APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL

#3
20260078522
2026-03-19

GROUP III NITRIDE SINGLE CRYSTAL GROWTH METHOD

#4
20250389054
2025-12-25

Low Fracture Energy Acoustic Lift-Off

#5
20250369153
2025-12-04

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

#6
20250320631
2025-10-16

SEED SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

#7
20250226217
2025-07-10

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUID SOLID EPITAXY

#8
20250034751
2025-01-30

METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SINGLE CRYSTAL AlN PRODUCTION APPARATUS

#9
20250034306
2025-01-30

DEVELOPMENT OF NOVEL NEUTRAL LAYER AND HYDROPHOBIC PINNING MAT MATERIALS FOR USE IN DSA WITH IMPROVED SUBSTRATE COMPATIBILITY

#10
20240417881
2024-12-19

METHOD FOR PRODUCING BETA-GA2O3/BETA-GA2O3 MULTILAYER BODY

#11
20240352578
2024-10-24

TREATMENT SOLUTION AND TREATMENT METHOD

#12
20240247369
2024-07-25

TREATMENT SOLUTION AND TREATMENT METHOD

#13
20240183070
2024-06-06

SINGLE-CRYSTAL DIAMOND, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SINGLE-CRYSTAL DIAMOND PLATE

#14
20240030027
2024-01-25

Formation of single crystal semiconductors using planar vapor liquid solid epitaxy

#15
20230168202
2023-06-01

METHOD FOR PREPARING AGNPS@SASP SUBSTRATE MATERIAL AND APPLICATION THEREOF

#16
20220393080
2022-12-08

Composite Wavelength Converter

#17
20220320433
2022-10-06

STRAIN ENGINEERING AND EPITAXIAL STABILIZATION OF HALIDE PEROVSKITES

#18
20220130669
2022-04-28

Formation of single crystal semiconductors using planar vapor liquid solid epitaxy

#19
20220119984
2022-04-21

GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL

#20
20210285124
2021-09-16

METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

#21
20210134594
2021-05-06

Formation of single crystal semiconductors using planar vapor liquid solid epitaxy

#22
20210043451
2021-02-11

Crystallization of two-dimensional structures comprising multiple thin films

#23
20210002760
2021-01-07

TREATMENT SOLUTION AND TREATMENT METHOD

#24
20200347512
2020-11-05

SPINCOATING EPITAXIAL FILMS

#25
20200299858
2020-09-24

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

#26
20200263317
2020-08-20

Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step

#27
20200223712
2020-07-16

Template-assisted synthesis of 2D nanosheets using nanoparticle templates

#28
20200087813
2020-03-19

Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

#29
20190393375
2019-12-26

Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

#30
20190360119
2019-11-28

Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities

#31
20190345634
2019-11-14

Single-crystal perovskite solid solutions with indifferent points for epitaxial growth of single crystals

#32
20190309439
2019-10-10

METHOD OF MANUFACTURING A GARNET TYPE CRYSTAL

#33
20190288158
2019-09-19

SEED WAFER FOR GaN THICKENING USING GAS- OR LIQUID-PHASE EPITAXY

#34
20190271097
2019-09-05

Semiconductor substrate, gallium nitride single crystal, and method for producing gallium nitride single crystal

#35
20190249328
2019-08-15

Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution

#36
20190003077
2019-01-03

Single-crystal perovskite solid solutions with indifferent points for epitaxial growth of single crystals

#37
20180351041
2018-12-06

Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same

#38
20180351038
2018-12-06

Polycrystalline gallium nitride self-supported substrate and light emitting element using same

#39
20180350918
2018-12-06

Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same

#40
20180312992
2018-11-01

Method for manufacturing semiconductor wafer

#41
20180298519
2018-10-18

Method for preparing SiC single crystal

#42
20180274128
2018-09-27

Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities

#43
20180203183
2018-07-19

Method and apparatus for producing crystalline cladding and crystalline core optical fibers

#44
20180202069
2018-07-19

Lead oxychloride, infrared nonlinear optical crystal, and preparation method thereof

#45
20180202067
2018-07-19

Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis

#46
20180195203
2018-07-12

Devices and methods for electrochemical liquid phase epitaxy

#47
20180195202
2018-07-12

Epitaxial quartz homeotypes crystal growth on beta quartz for pressure sensors and accelerometers

#48
20180186653
2018-07-05

Template-assisted synthesis of 2D nanosheets using nanoparticle templates

#49
20180179665
2018-06-28

Oriented alumina substrate for epitaxial growth

#50
20180179664
2018-06-28

Oriented alumina substrate for epitaxial growth

#51
20180175384
2018-06-21

Active material excelling in high-voltage characteristics

#52
20180112332
2018-04-26

Sapphire member and method for manufacturing sapphire member

#53
20180097142
2018-04-05

Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal

#54
20180066378
2018-03-08

Method for producing Group III nitride semiconductor including growing Group III nitride semiconductor through flux method

#55
20180040764
2018-02-08

Seed wafer for GaN thickening using gas- or liquid-phase epitaxy

#56
20180038011
2018-02-08

Alumina substrate

#57
20180019365
2018-01-18

Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

#58
20170372889
2017-12-28

Methods of producing seed crystal substrates and group 13 element nitride crystals, and seed crystal substrates

#59
20170330749
2017-11-16

Free-standing substrate, function element and method for producing same

#60
20170327968
2017-11-16

SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

#61
20170314156
2017-11-02

METHOD OF LIQUID-PHASE EPITAXIAL GROWTH OF LEAD ZIRCONATE TITANATE SINGLE CRYSTALS

#62
20170275780
2017-09-28

Group III nitride substrate and method for producing group III nitride crystal

#63
20170268125
2017-09-21

Group 13 element nitride crystal layer and function element

#64
20170260648
2017-09-14

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND RAMO4-CONTAINING SUBSTRATE

#65
20170260647
2017-09-14

Method for producing crystal of silicon carbide, and crystal production device

#66
20170218535
2017-08-03

Alumina substrate

#67
20170211204
2017-07-27

Alumina substrate

#68
20170191186
2017-07-06

Method for manufacturing nitride crystal substrate and substrate for crystal growth

#69
20170167049
2017-06-15

SiC single crystal and method for producing same

#70
20170145585
2017-05-25

Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

#71
20170121843
2017-05-04

Single metal crystals

#72
20170114475
2017-04-27

METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SEED CRYSTAL, AND SiC SUBSTRATE MANUFACTURING METHOD

#73
20170081780
2017-03-23

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL AND METHOD FOR PRODUCING A GaN SUBSTRATE

#74
20170077349
2017-03-16

Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same

#75
20170073840
2017-03-16

Process for producing group III nitride crystal and apparatus for producing group III nitride crystal

#76
20170067183
2017-03-09

METHOD OF MANUFACTURING SiC SINGLE CRYSTAL

#77
20170040168
2017-02-09

Methods and mask structures for substantially defect-free epitaxial growth

#78
20170031091
2017-02-02

Method and apparatus for producing crystalline cladding and crystalline core optical fibers

#79
20170009374
2017-01-12

SiC single crystal and method for producing same

#80
20170002266
2017-01-05

Preparation of nanorods

#81
20160362815
2016-12-15

METHOD FOR PRODUCING N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, AND CRYSTAL SUBSTRATE

#82
20160348272
2016-12-01

Method for manufacturing group 13 nitride crystal and group 13 nitride crystal

#83
20160340795
2016-11-24

Method of producing crystal

#84
20160326666
2016-11-10

Method for forming heterogeneous single garnet based crystals for passive Q-switched lasers and microlasers

#85
20160319457
2016-11-03

Crystalline gallium nitride containing flourine

#86
20160307800
2016-10-20

Method for manufacturing a silicon carbide wafer using a susceptor having draining openings

#87
20160284880
2016-09-29

Additive for preparing suede on monocrystalline silicon chip and use method thereof

#88
20160276674
2016-09-22

Layered platinum on freestanding palladium nano-substrates for electrocatalytic applications and methods of making thereof

#89
20160273127
2016-09-22

SUBSTRATE FOR FORMING A SINGLE CRYSTAL LAYER AND METHOD OF PREPARING A SINGLE CRYSTAL LAYER USING THE SUBSTRATE

#90
20160273126
2016-09-22

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

#91
20160237590
2016-08-18

SiC single crystal and method for producing same

#92
20160233380
2016-08-11

GaN template substrate

#93
20160230309
2016-08-11

Method for producing sic single crystal having low defects by solution process

#94
20160208411
2016-07-21

N-type SiC single crystal and method for its production

#95
20160200974
2016-07-14

BRIGHTNESS EQUALIZED QUANTUM DOTS

#96
20160197234
2016-07-07

Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same

#97
20160194786
2016-07-07

Self-aligned tunable metamaterials

#98
20160172541
2016-06-16

Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor

#99
20160163425
2016-06-09

Textured substrate for forming epitaxial film and method for producing the same

#100
20160160384
2016-06-09

Method for producing SiC substrate

#101
20160145768
2016-05-26

Zinc oxide free-standing substrate and method for manufacturing same

#102
20160130723
2016-05-12

Barium tetraborate compound and barium tetraborate non-linear optical crystal, and preparation method and use thereof

#103
20160122901
2016-05-05

Method for producing SiC single crystal

#104
20160108552
2016-04-21

Composite substrate, method for fabricating same, function element, and seed crystal substrate

#105
20160068993
2016-03-10

SiC single crystal and method for producing same

#106
20160053402
2016-02-25

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

#107
20160043178
2016-02-11

SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE

#108
20150376813
2015-12-31

METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER, AND HEXAGONAL SINGLE CRYSTAL ELEMENT

#109
20150357641
2015-12-10

Active material excelling in high-voltage characteristics

#110
20150329988
2015-11-19

Use of freestanding nitride veneers in semiconductor devices

#111
20150308014
2015-10-29

SiC single crystal, SiC wafer, SiC substrate, and SiC device

#112
20150299900
2015-10-22

Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution

#113
20150299896
2015-10-22

Method for producing an n-type SiC single crystal from a Si—C solution comprising a nitride

#114
20150287884
2015-10-08

Seed crystal substrates, composite substrates and functional devices

#115
20150275397
2015-10-01

Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal

#116
20150233015
2015-08-20

Method of liquid-phase epitaxial growth of lead zirconate titanate single crystals

#117
20150225872
2015-08-13

SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND METHOD OF PRODUCING SINGLE CRYSTAL

#118
20150207022
2015-07-23

System for the production of single crystal semiconductors and solar panels using the single crystal semiconductors

#119
20150191849
2015-07-09

SiC single-crystal ingot, SiC single crystal, and production method for same

#120
20150155168
2015-06-04

Method for forming an epitactic silicon layer

#121
20150144956
2015-05-28

Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor

#122
20150128847
2015-05-14

SiC single crystal and production method thereof

#123
20150103855
2015-04-16

Laser design

#124
20150075419
2015-03-19

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

#125
20150069015
2015-03-12

Spatially-controlled synthesis of palladium—rhodium hetero-nanostructures

#126
20150064915
2015-03-05

Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers

#127
20150064440
2015-03-05

Production method of zeolite film in which one axis is completely vertically oriented, using steam under synthetic gel-free condition

#128
20150059818
2015-03-05

METHOD OF PRODUCING FILM OF SURFACE Nb-CONTAINING La-STO CUBIC CRYSTAL PARTICLES

#129
20150024223
2015-01-22

Monolithic integrated lattice mismatched crystal template and preparation method thereof

#130
20150017466
2015-01-15

SELF-ALIGNED TUNABLE METAMATERIALS

#131
20150014586
2015-01-15

Method of making quantum dots

#132
20150013589
2015-01-15

Method of making quantum dots

#133
20140328742
2014-11-06

Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device

#134
20140319539
2014-10-30

Semiconductor wafer manufacturing method, and semiconductor wafer

#135
20140294713
2014-10-02

Method of producing periodic table group 13 metal nitride semiconductor crystal and periodic table group 13 metal nitride semiconductor crystal produced by this production method

#136
20140272397
2014-09-18

Zinc oxide-cellulose nanocomposite and preparation method thereof

#137
20140264429
2014-09-18

Composite substrates and functional devices

#138
20140103362
2014-04-17

Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices

#139
20140007807
2014-01-09

Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method

#140
20130334568
2013-12-19

Multilayer substrate structure and method of manufacturing the same

#141
20130333612
2013-12-19

Photoalignment of materials including liquid crystals

#142
20130333611
2013-12-19

LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE

#143
20130285060
2013-10-31

Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

#144
20130269597
2013-10-17

Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

#145
20130269596
2013-10-17

Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph

#146
20130266727
2013-10-10

Methods for providing patterned orientation templates for self-assemblable polymers for use in device lithography

#147
20130263774
2013-10-10

Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon

#148
20130224520
2013-08-29

Bismuth-substituted rare-earth iron garnet crystal film and optical isolator

#149
20130224500
2013-08-29

Bismuth-substituted rare-earth iron garnet crystal film and optical isolator

#150
20130216772
2013-08-22

Film formed by secondary growth of seed crystals, three crystal axes of which had all been uniformly oriented on substrate

#151
20130200429
2013-08-08

Epitaxy level packaging

#152
20130199438
2013-08-08

Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate

#153
20130187170
2013-07-25

Method for producing aluminum nitride crystals

#154
20130157448
2013-06-20

Reaction chamber including a susceptor having draining openings for manufacturing a silicon carbide wafer

#155
20130119518
2013-05-16

Semiconductor formation by lateral diffusion liquid phase epitaxy

#156
20130118400
2013-05-16

METHOD OF FORMING EPITAXIAL ZINC OXIDE FILMS

#157
20130118399
2013-05-16

Methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species

#158
20130095305
2013-04-18

Graphene pattern and process of preparing the same

#159
20130052802
2013-02-28

MOLD THERMOPHYSICAL PROPERTIES FOR THICKNESS UNIFORMITY OPTIMIZATION OF EXOCAST SHEET

#160
20130019927
2013-01-24

USE OF FREESTANDING NITRIDE VENEERS IN SEMICONDUCTOR DEVICES

#161
20130011677
2013-01-10

GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD THEREOF

#162
20130001642
2013-01-03

Monocrystalline substrate including lattice matching atoms in a near surface region and a monocrystalline layer disposed on the substrate

#163
20120238084
2012-09-20

Method of forming epitaxial based integrated circuit

#164
20120238083
2012-09-20

Method of forming epitaxial semiconductor structure

#165
20120238080
2012-09-20

Method of forming epitaxial film

#166
20120238079
2012-09-20

Method of transferring epitaxial film

#167
20120238078
2012-09-20

Method of integrating epitaxial film onto assembly substrate

#168
20120196088
2012-08-02

ARTICLE AND METHOD FOR FORMING LARGE GRAIN POLYCRYSTALLINE SILICON FILMS

#169
20120049137
2012-03-01

Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate

#170
20120017825
2012-01-26

Method of making a gallium nitride crystalline composition having a low dislocation density

#171
20110247550
2011-10-13

Apparatus for making epitaxial film

#172
20110215440
2011-09-08

Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device

#173
20110009623
2011-01-13

SELECTIVE GROWTH OF STABLE POLYMORPHS

#174
20100307404
2010-12-09

Method for manufacturing III metal nitride single crystal

#175
20100290946
2010-11-18

Methods of making an article of semiconducting material on a mold comprising semiconducting material

#176
20100206215
2010-08-19

Method for producing single-crystal thin film

#177
20100151248
2010-06-17

Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission

#178
20100105194
2010-04-29

Method of integrating epitaxial film onto assembly substrate

#179
20100102419
2010-04-29

Epitaxy-Level Packaging (ELP) System

#180
20100101725
2010-04-29

Apparatus for making epitaxial film

#181
20100009525
2010-01-14

Method including producing a monocrystalline layer

#182
20090324897
2009-12-31

Graphene pattern and process of preparing the same

#183
20090298265
2009-12-03

Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device

#184
20090221131
2009-09-03

Method for preparing substrate having monocrystalline film

#185
20090184327
2009-07-23

Method for producing silicon carbide single crystal

#186
20080171204
2008-07-17

Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission

#187
20080153267
2008-06-26

Method for manufacturing a SOI substrate associating silicon based areas and GaAs based areas

#188
20070175383
2007-08-02

Process for producing single crystal of gallium-containing nitride

#189
20070160501
2007-07-12

Device and method for treating a crystal by applying microdrops thereto

#190
20070105349
2007-05-10

Epitaxial semiconductor structures having reduced stacking fault nucleation sites

#191
20070101930
2007-05-10

Featuring forming methods to reduce stacking fault nucleation sites

#192
20060150893
2006-07-13

Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same

#193
20060148272
2006-07-06

Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission

#194
20050205871
2005-09-22

Lithographic methods to reduce stacking fault nucleation sites

#195
20050103258
2005-05-19

Epitaxial organic layered structure and method for making

#196
20050076829
2005-04-14

Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus

#197
15291689
2017-04-25

Graphoepitaxy directed self assembly