IN SITU DEFECT MITIGATION IN CRYSTAL GROWTH

SEMICONDUCTOR WAFER PROVIDING METHOD AND SEMICONDUCTOR WAFER PROVIDING SYSTEM

MANAGING GROWTH OF SILICON CARBIDE CRYSTALS

Systems and Methods for Modifying Crystal Growth Processes

METHOD FOR CONTROLLED GRADED MATERIALS/ALLOYS IN MOLECULAR BEAM EPITAXY AND CHEMICAL VAPOR DEPOSITION TYPE SYSTEMS

METHODS, SYSTEMS, AND DEVICES FOR CONTROLLING CRYSTAL GROWTH DEVICES

MANAGING THE GROWTH OF SILICON CARBIDE CRYSTALS

Multilayer Seed for Single-Crystal Growth, Method of Producing a Multilayer Seed, Use of the Multilayer Seed in a PVT Process for Growing a Single-Crystal and PVT Process Using the Same

PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL

SILICON CARBIDE WAFER AND METHOD OF FORMING THE SAME

METHOD FOR SUPPRESSING FORMATION OF STACKING FAULT, STRUCTURE PRODUCED BY THIS METHOD, AND METHOD FOR EVALUATING AFFECTED LAYER

GROWTH METHOD AND GROWTH DEVICE FOR SILICON CARBIDE CRYSTAL

DEVICES AND METHODS FOR GROWING CRYSTALS

HIGH-UNIFORMITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE

SILICON CARBIDE CRYSTAL GROWTH SYSTEM AND METHOD THEREOF

CRYSTAL GROWTH DEVICES

CONTROL OF BASAL PLANE DISLOCATIONS IN LARGE ALUMINUM NITRIDE CRYSTALS

Silicon Carbide Crystal Growth Device and Quality Control Method

IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS FOR SUBSTRATE PROCESSING

METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAYER, AND STRUCTURE CREATED BY MEANS OF SAID METHOD

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

PVT-method and device for producing single crystals in a safe manner with regard to the process

MOLYBDENUM PENTACHLORIDE CONDITIONING AND CRYSTALLINE PHASE MANIPULATION

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DEVICES MADE THEREFROM

Laser processing system integrated with MBE device

METHOD OF FABRICATING SILICON CARBIDE INGOT

Hierarchical Inverted/Normal Cobalt Ferrite Nano-Chessboard

METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANIC CRYSTAL HETEROSTRUCTURE

METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS

CRYSTAL GROWTH DEVICE AND METHOD FOR GROWING A SEMICONDUCTOR

SILICON CARBIDE CRYSTALS AND SILICON CARBIDE WAFER

Crystal growth method and wafer

CRYSTAL GROWING METHOD FOR CRYSTALS

HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES, METHOD OF FABRICATION AND DEVICES

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE

METHOD FOR GROWING CRYSTALS

METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES AS THE SOURCE MATERIAL

Fabrication of films having controlled stoichiometry using molecular beam epitaxy

Silicon carbide ingot including screw dislocations

Thermal control for formation and processing of aluminum nitride

METHOD AND APPARATUS FOR SYNCHRONOUS GROWTH OF SILICON CARBIDE CRYSTALS IN MULTIPLE CRUCIBLES

Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)

DEVICES AND METHODS FOR GROWING CRYSTALS

In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing

SILICON CARBIDE INGOT, METHOD OF PREPARING THE SAME, AND METHOD FOR PREPARING SILICON CARBIDE WAFER

Molecular Beam Epitaxial Growth Apparatus, Crystal Growth Method And Method For Manufacturing Light Emitter

NANOPOWDER CONTINUOUS PRODUCTION DEVICE FOR IMPROVING NANOPOWDER COLLECTION EFFICIENCY

SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGOT MANUFACTURED THEREBY

SiC growth apparatus comprised of a base having a plurality of graphite plates having anisotropy of a thermal expansion coefficient and method of manufacturing a SiC crystal using the apparatus

Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby

Devices and methods for growing crystals

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

Silicon carbide ingot and method of fabricating the same

Manufacturing method of silicon carbide wafer and semiconductor structure

Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal

Fabrication of films having controlled stoichiometry using molecular beam epitaxy

Large, UV-transparent aluminum nitride single crystals

Molecular-beam epitaxy system comprising an infrared radiation emitting heater and a thermally conductive backing plate including an infrared-absorbing coating thereon

Crystal growth apparatus including heater with multiple regions and crystal growth method therefor

Method for preparing silicon carbide wafer and silicon carbide wafer

Method for depositing high quality PVD films

Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer

Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a wafer

Thermal control for formation and processing of aluminum nitride

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR ELEMENT PRODUCTION METHOD

Method of synthesizing molybdenum oxychloride by reacting molybdenum oxide powder and chlorine gas and growing crystals of molybdenum oxychloride from the gaseous raw material

Method for manufacturing a silicon carbide single crystal by adjusting the position of a hole in a top of the growth container relative to the off angle of the silicon carbide substrate

Method for producing p-type 4H-SiC single crystal

Thermal control for formation and processing of aluminum nitride

Single crystal growth method which includes covering a part of a surface of a raw material for sublimation with a metal carbide powder

SiC single crystal manufacturing apparatus

Method for evaluating quality of SiC single crystal body and method for producing silicon carbide single crystal ingot using the same

Shielding member and single crystal growth device having the same

Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them

Silicon Carbide Single Crystal Manufacturing Device

Method of processing SiC single crystal and method of manufacturing SiC ingot

Method of manufacturing SiC ingot

SiC ingot and method of manufacturing SiC ingot

Method of manufacturing silicon carbide single crystal ingot

UV-transparent aluminum nitride single crystal having a diameter of 35 mm to 150 mm and a predefined UV transparency metric at a wavelength of 265 nm

Thermal control for formation and processing of aluminum nitride

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING SAME

SIC SINGLE CRYSTAL INGOT

Method for manufacturing silicon carbide single crystal

Molecular beam epitaxy under vector strong magnetic field and in-situ characterization apparatus thereof

Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot

Device for growing monocrystalline crystal

Thin Film Device Fabrication Methods and Apparatus

System for growth of large aluminum nitride single crystals with thermal-gradient control

Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus

Fabrication Method for Growing Single Crystal of Multi-Type Compound

Vapor deposition method and vapor deposition apparatus

Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

Device of manufacturing silicon carbide single crystal

Fabrication of semiconductor device using alternating high and low temperature layers

Silicon carbide single crystal substrate and process for producing same

Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them

Growth of large aluminum nitride single crystals with thermal-gradient control

PREFERRED VOLUMETRIC ENLARGEMENT OF III-NITRIDE CRYSTALS

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

Ingot, silicon carbide substrate, and method for producing ingot

INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT

Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion

APPARATUS FOR FABRICATING INGOT

APPARATUS FOR FABRICATING INGOT

Method for making topological insulator structure

Scintillator, method of fabricating the same and X-ray detector including the scintillator

Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer

Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

Semi-insulating silicon carbide monocrystal and method of growing the same

Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ

Load lock having secondary isolation chamber

Dielectric film forming apparatus and method for forming dielectric film

Method for controlled growth of silicon carbide and structures produced by same

METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL

Shield member and apparatus for growing single crystal equipped with the same

Method for manufacturing magnetic recording medium, and magnetic recording/reproducing apparatus

Solid solution inducing layer for weak epitaxy growth of non-planar phthalocyanine

MOLECULAR BEAM EPITAXY APPARATUS FOR PRODUCING WAFERS OF SEMICONDUCTOR MATERIAL

Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus

Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects

Controlling an epitaxial growth process in an epitaxial reactor

Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system

Growth of large aluminum nitride single crystals with thermal-gradient control

Method and device for measuring temperature during deposition of semiconductor

Method for controlled growth of silicon carbide and structures produced by same

METHODS USING SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS

Method of Growing AlN Crystals, and AlN Laminate

Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them

Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom

COMBINED CRYSTAL/OPTICAL ASSEMBLY AND METHOD OF ITS USE

Load lock having secondary isolation chamber

Fabrication of SiC substrates with low warp and bow

Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate

RADICAL GENERATING APPARATUS AND ZNO-BASED THIN FILM

SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique

Control of crystal orientation and stress in sputter deposited thin films

PIEZOELECTRIC COMPONENT HAVING A MAGNETIC LAYER

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE

Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting device, group-III nitride semiconductor light-emitting device thereof, and lamp thereof

Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system

Method of controlling an epitaxial growth process in an epitaxial reactor

Nanoparticles and method of making thereof

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Device and method to producing single crystals by vapour deposition

SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR

Method for growing Si-Ge semiconductor materials and devices on substrates

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

Micropipe-free silicon carbide and related method of manufacture

Micropipe-free silicon carbide and related method of manufacture

Method and apparatus for AlGan vapor phase growth

Columnar crystal containing light emitting element and method of manufacturing the same

Vapor phase growth method

Transparent ferromagnetic compound containing no magnetic impurity such as transition metal or rare earth metal and forming solid solution with element having imperfect shell, and method for adjusting ferromagnetic characteristics thereof

Semiconductor device having group III nitride buffer layer and growth layers

Minimizing degradation of SiC bipolar semiconductor devices

Unseeded silicon carbide single crystals

Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path

USE OF SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS

Material evaporation chamber with differential vacuum pumping

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

Method for producing silicon epitaxial wafer and silicon epitaxial wafer

Method of growing semiconductor crystal

Driving shaft of effusion cell for deposition system and deposition system having the same

Silicon carbide single crystal and method and apparatus for producing the same

Phosphor, manufacturing method thereof and light emitting device using the same

Method for manufacturing aluminum nitride single crystal

Metallic nanowire and method of making the same

Minimizing degradation of SiC bipolar semiconductor devices

Minimizing degradation of SiC bipolar semiconductor devices

Epitaxial organic layered structure and method for making

Molecular beam epitaxy growth apparatus and method of controlling same

Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient

Doping-assisted defect control in compound semiconductors

Methods for forming superconductor articles and XRD methods for characterizing same

Device and method for producing single crystals by vapor deposition

Control of basal plane dislocations in large aluminum nitride crystals