121272 ⎘
Single-crystal growth by condensing evaporated or sublimed materials; Controlling or regulating Controlling or regulating flux or flow of depositing species or vapour
Controlling Silicon Carbide Crystal Growth with Baffles
#2SiC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES
#3SiC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES
#4ULTRA-LOW TEMPERATURE SILICON MOLECULAR BEAM EPITAXY USING DOPANT-INDUCED CATALYSIS OF HYDROGEN-TERMINATED SILICON
#5METHODS FOR CRYSTAL GROWTH BY REPLACING A SUBLIMATED TARGET SOURCE MATERIAL WITH A CANDIDATE SOURCE MATERIAL
#6Treatment of Graphite Structures for Use Crystal Growth System or Deposition System for Growing Silicon Carbide
#7SUPRAMOLECULAR ORGANOMETALLIC CURABLE FLUIDS TO COAT SUBSTRATES WITH METAL CARBIDES
#8PVT METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTALS IN A SAFE PROCESS
#9SYSTEM AND METHOD FOR CONTROLLING SILICON CARBIDE CRYSTAL GROWTH
#10Improved Furnace Apparatus for Crystal Production With Seed Holder Repositioning Unit
#11CRYSTAL GROWTH METHODS AND DEVICES
#12CRUCIBLE FOR PRODUCING A SIC VOLUME MONO CRYSTAL AND A METHOD FOR GROWING A SIC VOLUME MONO CRYSTAL
#13GROWTH DEVICE OF SILICON CARBIDE SINGLE CRYSTAL AND GROWTH METHOD
#14DEVICE AND METHOD FOR PREPARING SILICON CARBIDE CRYSTAL
#15LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH REDUCED CRYSTALLOGRAPHIC STRESS
#16SiC CRYSTAL GROWTH APPARATUS AND METHOD
#17MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
#18METHODS AND APPARATUSES FOR CRYSTAL GROWTH
#19MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
#20METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE
#21Method and Device for Producing a SiC Solid Material
#22Improved Furnace Apparatus for Crystal Production
#23Superconducting Compounds and Methods for Making the Same
#24SYSTEM FOR DEPOSITING PIEZOELECTRIC MATERIALS, METHODS FOR USING THE SAME, AND MATERIALS DEPOSITED WITH THE SAME
#25Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal
#26Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport
#27Method of single crystal growth by controlling the heating of a source material and the cooling of a backside of a lid
#28SILICON CARBIDE CRYSTAL
#29A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (111) SI
#30Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
#31MBE system with direct evaporation pump to cold panel
#32SiC single crystal sublimation growth apparatus
#33Apparatus and method for growing high-purity semi-insulating silicon carbide crystal
#34Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material
#35Methods for crystal growth by replacing a sublimated target source material with a candidate source material
#36Method for depositing low temperature phosphorous-doped silicon
#37SILICON CARBIDE CRYSTAL GROWING APPARATUS AND CRYSTAL GROWING METHOD THEREOF
#38Preparation apparatus for silicon carbide crystals comprising a circular cylinder, a doping tablet, and a plate
#39MOLECULAR BEAM EPITAXY SYSTEMS WITH VARIABLE SUBSTRATE-TO-SOURCE ARRANGEMENTS
#40Superconducting compounds and methods for making the same
#41Silicon carbide crystal
#42System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport
#43Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide
#44Single crystal growth method which includes covering a part of a surface of a raw material for sublimation with a metal carbide powder
#45Method of manufacturing SiC single crystal and covering member
#46Apparatus provided with a crucible including a porous baffle plate therein for manufacturing compound single crystal and method for manufacturing compound single crystal
#47Method for producing silicon carbide single crystal
#48SiC single crystal sublimation growth apparatus
#49Silicon carbide crystal and method for manufacturing the same
#50SiC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES
#51Method for formation of a transition metal dichalcogenide (TMDC) material layer
#52Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device
#53Effusion cells, deposition systems including effusion cells, and related methods
#54Deposition systems including effusion sources, and related methods
#55Method and device for producing a group 13 element nitride crystal using a shielding object
#56Molten target sputtering (MTS) deposition for enhanced kinetic energy and flux of ionized atoms
#57Method of making photonic crystal
#58Reaction cell for growing SiC crystal with low dislocation density
#59Graphite crucible for sublimation growth of SiC crystal
#60APPARATUS AND PROCESS FOR CRYSTAL GROWTH
#61Silicon carbide substrate and method of manufacturing the same
#62Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate
#63Gas-supply system and method
#64Apparatus and method for bulk vapour phase crystal growth
#65Device and method for precipitating a layer on a substrate
#66Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide
#67Bulk diffusion crystal growth of nitride crystal
#68Method for producing GaObased crystal film
#69Ingot, silicon carbide substrate, and method for producing ingot
#70Apparatus for fabricating ingot
#71Method to reduce dislocations in SiC crystal growth
#72Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
#73Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
#74Apparatus for fabricating silicon carbide single crystal ingot and method for fabricating ingot
#75APPARATUS FOR FABRICATING INGOT
#76APPARATUS FOR FABRICATING INGOT
#77SiC single crystal, production method therefor, SiC wafer and semiconductor device
#78Apparatus and Method for Crystal Growth
#79Semi-insulating silicon carbide monocrystal and method of growing the same
#80Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing
#81Large diameter, high quality SiC single crystals, method and apparatus
#82Crucible for Growing Crystals
#83Atomic flux measurement device
#84Silicon carbide substrate and method of manufacturing the same
#85Direct liquid injection for halide vapor phase epitaxy systems and methods
#86DEVICE AND METHOD FOR PRECIPITATING A LAYER ON A SUBSTRATE
#87Shield member and apparatus for growing single crystal equipped with the same
#88In-situ flux measurement devices, methods, and systems
#89In-situ flux measurement devices, methods, and systems
#90SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS
#91SiC single crystal sublimation growth method and apparatus
#92APPARATUS OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#93Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method
#94Method and device for accurately measuring the incident flux of ambient particles in a high or ultra-high vacuum environment
#95APPARATUS AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
#96Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate
#97SINGLE CRYSTAL MANUFACTURING DEVICE AND MANUFACTURING METHOD
#98APPARATUS AND PROCESS FOR CRYSTAL GROWTH
#99METHOD FOR PREPARING POLYCRYSTALS AND SINGLE CRYSTALS OF ZINC OXIDE (ZnO) ON A SEED BY CHEMICALLY ACTIVATED SUBLIMATION AT HIGH TEMPERATURE AND DEVICE FOR CARRYING OUT SAID METHOD
#100Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
#101Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same
#102Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same
#103Guided diameter SiC sublimation growth with multi-layer growth guide
#104SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
#105Apparatus for evaporation, a crucible for evaporation and a method of growing a film on a substrate
#106Group III nitride single crystal and method of its growth
#107Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal
#108Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
#109Apparatus And Process For Crystal Growth
#110SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR
#111Micropipe-free silicon carbide and related method of manufacture
#112Micropipe-free silicon carbide and related method of manufacture
#113In-situ flux measurement devices, methods, and systems
#114Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same
#115Apparatus and method for the production of bulk silicon carbide single crystals
#116Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
#117OXIDE CRYSTAL GROWTH APPARATUS AND FABRICATION METHOD USING THE SAME
#118Apparatus for manufacturing single crystal
#119Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
#120Formation of single-crystal silicon carbide
#121Seed crystal of silicon carbide single crystal and method for producing ingot using same
#122Method and apparatus for manufacturing single crystal
#123Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient