ClassID:

121276

C30B23/04 - CPC Classification

Classification description:

Single-crystal growth by condensing evaporated or sublimed materials; Epitaxial-layer growth Pattern deposit, e.g. by using masks

Recent Application in this class:
#1
20260054255
2026-02-26

PHOTOCATALYTIC CO2 REDUCTION WITH BINARY CATALYST-DECORATED NANOSTRUCTURES

#2
20250346492
2025-11-13

PHOTOCATALYTIC CO2 REDUCTION WITH CO-CATALYST DECORATED NANOSTRUCTURES

#3
20240180041
2024-05-30

HETEROJUNCTION SEMICONDUCTOR SUBSTRATE WITH EXCELLENT DIELECTRIC PROPERTIES, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE USING THE SAME

#4
20230227996
2023-07-20

METHOD OF FORMING SHADOW WALLS FOR FABRICATING PATTERNED STRUCTURES

#5
20230160100
2023-05-25

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR SUPPRESSING INTRODUCTION OF DISPLACEMENT TO GROWTH LAYER

#6
20230122332
2023-04-20

EPITAXIAL FILM WITH MULTIPLE STRESS STATES AND METHOD THEREOF

#7
20220328311
2022-10-13

MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES

#8
20220290327
2022-09-15

Semiconductor wafer and method for manufacturing same

#9
20200392644
2020-12-17

Fabrication process using vapour deposition through a positioned shadow mask

#10
20200002801
2020-01-02

VAPOR DEPOSITION MASK AND MANUFACTURING METHOD FOR VAPOR DEPOSITION MASK

#11
20190173147
2019-06-06

Metaconductor skins for low loss RF conductors

#12
20190153619
2019-05-23

Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements

#13
20190131513
2019-05-02

Manufacturing method for a nanostructured device using a shadow mask

#14
20190093256
2019-03-28

Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method

#15
20190031955
2019-01-31

Luminescent hyperbolic metasurfaces

#16
20190003078
2019-01-03

Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

#17
20180239085
2018-08-23

Method for the formation of nano-scale on-chip optical waveguide structures

#18
20180120695
2018-05-03

Method for application of an overgrowth layer on a germ layer

#19
20180005815
2018-01-04

Manufacture of Group IIIA-nitride layers on semiconductor on insulator structures

#20
20170140919
2017-05-18

Enhanced defect reduction for heteroepitaxy by seed shape engineering

#21
20170092482
2017-03-30

Method for manufacturing a semiconductor material including a semi-polar III-nitride layer

#22
20170040168
2017-02-09

Methods and mask structures for substantially defect-free epitaxial growth

#23
20160070060
2016-03-10

Method for the formation of nano-scale on-chip optical waveguide structures

#24
20150228854
2015-08-13

Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities

#25
20150228853
2015-08-13

Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities

#26
20150228846
2015-08-13

Nitride-based III-V group compound semiconductor

#27
20150069611
2015-03-12

Metal nanoparticles grown on an inner surface of open volume defects within a substrate

#28
20140345517
2014-11-27

Method for the formation of nano-scale on-chip optical waveguide structures

#29
20140251205
2014-09-11

Methods and systems for thin film deposition processes

#30
20140008766
2014-01-09

Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities

#31
20130255566
2013-10-03

Method for making an epitaxial structure with carbon nanotube layer

#32
20130233238
2013-09-12

Methods using mask structures for substantially defect-free epitaxial growth

#33
20120276722
2012-11-01

Method for growing semipolar nitride

#34
20120025195
2012-02-02

Confined Lateral Growth of Crystalline Material

#35
20110227198
2011-09-22

Semipolar semiconductor crystal and method for manufacturing the same

#36
20110212559
2011-09-01

Method for growing a nitride-based III-V group compound semiconductor

#37
20100252805
2010-10-07

GaN Nanorod Arrays Formed by Ion Beam Implantation

#38
20100078628
2010-04-01

UNIVERSAL METHOD FOR SELECTIVE AREA GROWTH OF ORGANIC MOLECULES BY VAPOR DEPOSITION

#39
20080182397
2008-07-31

Selective epitaxy process control

#40
20080149936
2008-06-26

Process for integrating a III-N type component on a (001) nominal silicium substrate

#41
20080107876
2008-05-08

Zinc Oxide Microstructures and a Method of Preparing the Same

#42
20070163489
2007-07-19

Method of forming a layer having a single crystalline structure

#43
20070137555
2007-06-21

Self-assembled nanostructures

#44
20070085093
2007-04-19

Method for growing a nitride-based III-V Group compound semiconductor

#45
20070000433
2007-01-04

III-nitride semiconductor device fabrication

#46
20050176217
2005-08-11

Method to fabricate patterned strain-relaxed SiGe epitaxial with threading dislocation density control

#47
18170638
2023-10-24

Monochromatic emitters on coalesced selective area growth nanocolumns