Patents-Review.com
ClassID:

121274 ⎘

C30B23/02 - CPC Classification

Classification description:

Single-crystal growth by condensing evaporated or sublimed materials Epitaxial-layer growth

Sub-classes:
Recent Application in this class:
#1
20260139406
2026-05-21

HETEROSTRUCTURES WITH SCANDATE METAL OXIDE AND POTASSIUM TANTALATE LAYERS

 #2
20260132036
2026-05-14

SiC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES

 #3
20260132035
2026-05-14

SiC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES

 #4
20260071351
2026-03-12

LARGE DIAMETER SILICON CARBIDE WAFERS

 #5
20260071350
2026-03-12

LARGE DIAMETER SILICON CARBIDE WAFERS

 #6
20260062833
2026-03-05

Silicon Carbide Vapor Source Material for use in a Sublimation System for Growing Crystalline Silicon Carbide

 #7
20260062832
2026-03-05

Bulk Silicon Carbide Crystal Growth System with 3D-Printed Parts

 #8
20250290225
2025-09-18

MONCRYSTALLINE COATINGS FOR REACTOR PARTS SUITABLE FOR THE EPITAXIAL DEPOSITION OF SEMICONDUCTOR FILMS

 #9
20250290224
2025-09-18

HIGH DEFECT SiC WAFER WITH DEVICE LAYER AND METHODS OF MANUFACTURE

 #10
20250223724
2025-07-10

SILICON CARBIDE WAFER AND METHOD OF FORMING THE SAME

 #11
20250215613
2025-07-03

METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL INGOT

 #12
20250215612
2025-07-03

SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

 #13
20250215611
2025-07-03

SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

 #14
20250215610
2025-07-03

SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

 #15
20250187929
2025-06-12

METHOD AND APPARATUS FOR PRODUCING SIC

 #16
20250163606
2025-05-22

PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION METHOD FOR MULTILAYER FILM OF SINGLE CRYSTAL SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT

 #17
20250137167
2025-05-01

METHODS OF FORMING PEROVSKITE OXIDE MEMBRANES

 #18
20250101630
2025-03-27

HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING SAME

 #19
20250092564
2025-03-20

DEVICE AND METHOD FOR PREPARING SILICON CARBIDE CRYSTAL

 #20
20250066948
2025-02-27

CRYSTAL GROWTH DEVICES

 #21
20250027227
2025-01-23

Silicon Carbide Crystal Growth Device and Quality Control Method

 #22
20250011916
2025-01-09

METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

 #23
20250006491
2025-01-02

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH REDUCED CRYSTALLOGRAPHIC STRESS

 #24
20240405076
2024-12-05

METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAYER, AND STRUCTURE CREATED BY MEANS OF SAID METHOD

 #25
20240352622
2024-10-24

LARGE DIAMETER SILICON CARBIDE WAFERS

 #26
20240352617
2024-10-24

VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AND SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME

 #27
20240328031
2024-10-03

SiC CRYSTAL GROWTH APPARATUS AND METHOD

 #28
20240297069
2024-09-05

COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE STRUCTURE

 #29
20240287705
2024-08-29

METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY PROVIDING A COMPOUND INCLUDING ALUMINUM AND OXYGEN IN A CAPSULE COMPRISED OF A FIRST AND SECOND MATERIAL

 #30
20240242963
2024-07-18

EPITAXIAL NITRIDE FERROELECTRONICS

 #31
20240229292
2024-07-11

Hybrid pulsed laser deposition of complex oxide thin films made from elements having a large vapor pressure mismatch

 #32
20240218563
2024-07-04

High Sb concentration GaAsSb/GaAsSbN/GaAlAs core-shell-shell nanowires

 #33
20240076799
2024-03-07

WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, AND WAFER AND EPITAXIAL WAFER MANUFACTURED THEREBY

 #34
20240068127
2024-02-29

SIMULTANEOUS GROWTH OF TWO SILICON CARBIDE LAYERS

 #35
20240060212
2024-02-22

SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME

 #36
20240035153
2024-02-01

Method and Device for Producing a SiC Solid Material

 #37
20230407498
2023-12-21

WATER SPLITTING DEVICE PROTECTION

 #38
20230392293
2023-12-07

8-inch SiC single crystal substrate

 #39
20230392292
2023-12-07

MULTI-LAYER STACKS OF 2D MATERIALS AND/OR OTHER LAYERS AND RELATED SYSTEMS AND METHODS

 #40
20230357952
2023-11-09

METHOD FOR GROWING SINGLE CRYSTALS

 #41
20230349067
2023-11-02

Fabrication of films having controlled stoichiometry using molecular beam epitaxy

 #42
20230340694
2023-10-26

SUBSTRATE FOR GROUP-III NITRIDE EPITAXIAL GROWTH AND METHOD FOR PRODUCING THE SAME

 #43
20230313413
2023-10-05

Method of cleaning a group III-nitride single crystal substrate comprising cleaning a nitrogen-polar face with a detergent including a fluoroorganic compound

 #44
20230295838
2023-09-21

HIGH QUALITY SILICON CARBIDE SEED CRYSTAL, SILICON CARBIDE CRYSTAL, SILICON CARBIDE SUBSTRATE, AND PREPARATION METHOD THEREFOR

 #45
20230257905
2023-08-17

LARGE-DIAMETER SUBSTRATE FOR GROUP-III NITRIDE EPITAXIAL GROWTH AND METHOD FOR PRODUCING THE SAME

 #46
20230250555
2023-08-10

GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER GROWTH METHOD, NITRIDE SEMICONDUCTOR INGOT AND SPUTTERING TARGET

 #47
20230203710
2023-06-29

SILICON CARBIDE POWDER AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME

 #48
20230193512
2023-06-22

Vapor phase epitaxial growth device

 #49
20230193506
2023-06-22

Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal

 #50
20230140873
2023-05-11

Silicon carbide wafer and method of manufacturing same

 #51
20230112967
2023-04-13

RUTILE PHASE TIOX DEPOSITION WITH PREFERRED CRYSTAL ORIENTATIONS

 #52
20230053509
2023-02-23

SILICON CARBIDE SINGLE CRYSTAL WAFER, CRYSTAL, PREPARATION METHODS THEREFOR, AND SEMICONDUCTOR DEVICE

 #53
20230044970
2023-02-09

Silicon carbide crystal manufacturing apparatus, control device of silicon carbide crystal manufacturing apparatus, and method of generating learning model and controlling silicon carbide crystal manufacturing apparatus

 #54
20220371901
2022-11-24

Methods for Preparing Silicon Carbide Powder and Single Crystal Silicon Carbide

 #55
20220316088
2022-10-06

Molecular Beam Epitaxial Growth Apparatus, Crystal Growth Method And Method For Manufacturing Light Emitter

 #56
20220298669
2022-09-22

METHODS, SYSTEMS, AND APPARATUSES FOR A REACTOR

 #57
20220267924
2022-08-25

Kinetic Model for Molecular Beam Epitaxy Growth of III-V Bismide Alloys

 #58
20220259758
2022-08-18

A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (111) SI

 #59
20220259716
2022-08-18

Metal oxide film, semiconductor device, and display device

 #60
20220251725
2022-08-11

METHOD OF GROWING ON-AXIS SILICON CARBIDE SINGLE CRYSTAL BY REGULATING SILICON CARBIDE SOURCE MATERIAL IN SIZE

 #61
20220220638
2022-07-14

Silicon carbide substrate

 #62
20220220637
2022-07-14

Silicon carbide substrate

 #63
20220205133
2022-06-30

ENHANCED DOPING USING ALLOY BASED SOURCES

 #64
20220189798
2022-06-16

Semiconductor substrate manufacturing device applicable to large-diameter semiconductor substrate

 #65
20220189768
2022-06-16

Large dimension silicon carbide single crystalline materials with reduced crystallographic stress

 #66
20220180896
2022-06-09

THIN-FILM PIEZOELECTRIC MATERIAL ELEMENT

 #67
20220136133
2022-05-05

RARE-EARTH ION DOPED THIN FILM TECHNOLOGIES

 #68
20220127752
2022-04-28

METHOD FOR MANUFACTURING EPITAXIAL FILM AND EPITAXIAL FILM THEREOF

 #69
20220119940
2022-04-21

Process for thin film deposition through controlled formation of vapor phase transient species

 #70
20220112623
2022-04-14

Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingot

 #71
20220090295
2022-03-24

Silicon carbide wafer and method of preparing the same

 #72
20220074046
2022-03-10

REACTION CHAMBER FOR A DEPOSITION REACTOR WITH INTERSPACE AND LOWER CLOSING ELEMENT AND REACTOR

 #73
20220064001
2022-03-03

SYNTHESIS AND USE OF MATERIALS FOR ULTRAVIOLET FIELD-EMISSION LAMPS

 #74
20220049374
2022-02-17

Silicon carbide wafer and method of fabricating the same

 #75
20220049371
2022-02-17

MBE system with direct evaporation pump to cold panel

 #76
20210398807
2021-12-23

SiC semiconductor substrate, method for manufacturing same, and device for manufacturing same

 #77
20210395919
2021-12-23

Manufacturing method of semi-insulating single-crystal silicon carbide powder

 #78
20210395918
2021-12-23

High-purity semi-insulating single-crystal silicon carbide wafer and crystal

 #79
20210372005
2021-12-02

Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby

 #80
20210363660
2021-11-25

Method of evaluating cleanliness, method of determining cleaning condition, and method of manufacturing silicon wafer

 #81
20210317598
2021-10-14

High sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell nanowires

 #82
20210317595
2021-10-14

Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material

 #83
20210310152
2021-10-07

Fabrication of films having controlled stoichiometry using molecular beam epitaxy

 #84
20210301422
2021-09-30

SiC composite substrate including biaxially oreinted SiC layer and semiconductor device

 #85
20210301420
2021-09-30

Production method of silicon carbide wafer, production method of semiconductor substrate, and production method of silicon carbide semiconductor device

 #86
20210301417
2021-09-30

Crystal raw material loading device comprising a plurality of receptacles arranged relative to a seed crystal bearing device and semiconductor crystal growth device comprising the same

 #87
20210296448
2021-09-23

SiC semiconductor device

 #88
20210269938
2021-09-02

Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same

 #89
20210269937
2021-09-02

Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material

 #90
20210263313
2021-08-26

High refractive index optical device formed based on solid crystal and fabrication method thereof

 #91
20210262116
2021-08-26

HIGH REFRACTIVE INDEX OPTICAL DEVICE FORMED BASED ON SOLID CRYSTAL AND FABRICATION METHOD THEREOF

 #92
20210254241
2021-08-19

METHOD FOR RECYCLING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

 #93
20210246573
2021-08-12

SILICON CARBIDE CRYSTAL GROWING APPARATUS AND CRYSTAL GROWING METHOD THEREOF

 #94
20210246572
2021-08-12

SiC single crystal, method of manufacturing SiC ingot, and method of manufacturing SiC wafer

 #95
20210230769
2021-07-29

Dislocation distribution for silicon carbide crystalline materials

 #96
20210198804
2021-07-01

Large diameter silicon carbide wafers

 #97
20210193907
2021-06-24

Unknown

 #98
20210189590
2021-06-24

Preparation apparatus for silicon carbide crystals comprising a circular cylinder, a doping tablet, and a plate

 #99
20210189581
2021-06-24

High-strength single-crystal like nanotwinned nickel coatings and methods of making the same

 #100
20210189547
2021-06-24

Metal oxide film, semiconductor device, and display device

 #101
20210140036
2021-05-13

Process for thin film deposition through controlled formation of vapor phase transient species

 #102
20210123843
2021-04-29

Method for preparing silicon carbide wafer and silicon carbide wafer

 #103
20210123160
2021-04-29

Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom

 #104
20210087706
2021-03-25

Apparatus for producing bulk silicon carbide

 #105
20210066546
2021-03-04

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR ELEMENT PRODUCTION METHOD

 #106
20210010157
2021-01-14

Method for manufacturing a silicon carbide single crystal by adjusting the position of a hole in a top of the growth container relative to the off angle of the silicon carbide substrate

 #107
20200407872
2020-12-31

Single crystal growth crucible having a first housing and a second housing, and single crystal production device

 #108
20200407871
2020-12-31

Crystal growth method in a semiconductor device

 #109
20200399782
2020-12-24

Apparatus and method for molecular beam epitaxy

 #110
20200365396
2020-11-19

Methods for forming graded wurtzite III-nitride alloy layers

 #111
20200350409
2020-11-05

Growth of Single Atom Chains for Nano-Electronics and Quantum Circuits

 #112
20200347516
2020-11-05

Fe—Co—Al alloy magnetic thin film

 #113
20200318254
2020-10-08

SiC single crystal, and SiC ingot

 #114
20200308725
2020-10-01

Sputtering equipment and method of manufacturing semiconductor device

 #115
20200243651
2020-07-30

GALLIUM NITRIDE MATERIALS AND METHODS

 #116
20200157705
2020-05-21

Stabilized, high-doped silicon carbide

 #117
20200141026
2020-05-07

System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion flux

 #118
20200123678
2020-04-23

Seed crystal including protective film including a first layer with first filler and second layer with second filler

 #119
20200080231
2020-03-12

Substrate-transferred stacked optical coatings

 #120
20200080228
2020-03-12

Method of manufacturing SiC single crystal and covering member

 #121
20190382882
2019-12-19

VACUUM DEPOSITION PROCESSING OF MULTIPLE SUBSTRATES

 #122
20190360120
2019-11-28

Source material for electronic device applications

 #123
20190360118
2019-11-28

SiC single crystal composite and SiC ingot

 #124
20190330761
2019-10-31

SiC single crystal growth apparatus containing movable heat-insulating material and growth method of SiC single crystal using the same

 #125
20190316272
2019-10-17

Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them

 #126
20190279670
2019-09-12

Thin-film piezoelectric material substrate, thin-film piezoelectric material element, head gimbal assembly, ink jet head and method of manufacturing the thin-film piezoelectric

 #127
20190252504
2019-08-15

n-Type SiC single crystal substrate, method for producing same and SiC epitaxial wafer

 #128
20190229258
2019-07-25

High breakdown strength ferroelectric SrHfOmaterials

 #129
20190229190
2019-07-25

GALLIUM NITRIDE MATERIALS AND METHODS

 #130
20190214468
2019-07-11

Gallium nitride materials and methods

 #131
20190194824
2019-06-27

Method of processing SiC single crystal and method of manufacturing SiC ingot

 #132
20190194822
2019-06-27

SiC ingot and method of manufacturing SiC ingot

 #133
20190177834
2019-06-13

Thin film coating and method of fabrication thereof

 #134
20190131513
2019-05-02

Manufacturing method for a nanostructured device using a shadow mask

 #135
20190127880
2019-05-02

Method for manufacturing silicon carbide single crystal

 #136
20190123257
2019-04-25

Film structure and method for manufacturing the same

 #137
20190112707
2019-04-18

Systems and methods for atomic layer deposition

 #138
20190109319
2019-04-11

Method for the fabrication of indium-gallium nitride electrodes for electrochemical devices

 #139
20190106810
2019-04-11

Method of evaluating cleanliness, method of determining cleaning condition, and method of manufacturing silicon wafer

 #140
20190093256
2019-03-28

Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method

 #141
20190043970
2019-02-07

Fabrication of a transistor with a channel structure and semimetal source and drain regions

 #142
20190024257
2019-01-24

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING SAME

 #143
20190024227
2019-01-24

Metal oxide film, semiconductor device, and display device

 #144
20180355511
2018-12-13

Method for producing SiC single crystal, SiC single crystal, and SiC ingot

 #145
20180290893
2018-10-11

SiC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES

 #146
20180282896
2018-10-04

FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFOR

 #147
20180254325
2018-09-06

Growth of Single Atom Chains for Nano-Electronics and Quantum Circuits

 #148
20180195202
2018-07-12

Epitaxial quartz homeotypes crystal growth on beta quartz for pressure sensors and accelerometers

 #149
20180187332
2018-07-05

Stabilized, high-doped silicon carbide

 #150
20180179666
2018-06-28

Molecular beam epitaxy under vector strong magnetic field and in-situ characterization apparatus thereof

 #151
20180087186
2018-03-29

METHOD OF PRODUCING CARBIDE RAW MATERIAL

 #152
20180076379
2018-03-15

Method of manufacturing a dielectric device

 #153
20180066380
2018-03-08

Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot

 #154
20170350002
2017-12-07

Method for manufacturing sputtering target

 #155
20170335487
2017-11-23

Method for manufacturing silicon carbide single crystal

 #156
20170323186
2017-11-09

Graphene-based micro-scale identification system

 #157
20170309480
2017-10-26

Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

 #158
20170271185
2017-09-21

Thin Film Device Fabrication Methods and Apparatus

 #159
20170268123
2017-09-21

Apparatus for manufacturing large scale single crystal monolayer of hexagonal boron nitride and method for manufacturing the same

 #160
20170263447
2017-09-14

Method to transfer two dimensional film grown on metal-coated wafer to the wafer itself in a face-to-face manner

 #161
20170259294
2017-09-14

Substrate processing system having susceptorless substrate support with enhanced substrate heating control

 #162
20170194188
2017-07-06

SUSCEPTOR DESIGN FOR EPI UNIFORMITY IMPROVEMENT

 #163
20170170384
2017-06-15

Method for manufacturing crystal film

 #164
20170162779
2017-06-08

Thin-film piezoelectric material substrate, thin-film piezoelectric material element, head gimbal assembly, ink jet head and method of manufacturing the thin-film piezoelectric material element

 #165
20170152609
2017-06-01

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

 #166
20170145592
2017-05-25

Large aluminum nitride crystals with reduced defects and methods of making them

 #167
20170047407
2017-02-16

Semiconductor material having a compositionally-graded transition layer

 #168
20170037536
2017-02-09

METHOD AND APPARATUS FOR THE SELECTIVE DEPOSITION OF EPITAXIAL GERMANIUM STRESSOR ALLOYS

 #169
20170022632
2017-01-26

Doped rare earth nitride materials and devices comprising same

 #170
20160369390
2016-12-22

Method for depositing a piezoelectric film containing AIN, and a piezoelectric film containing AIN

 #171
20160348273
2016-12-01

Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them

 #172
20160293798
2016-10-06

PVD buffer layers for LED fabrication

 #173
20160289863
2016-10-06

Silicon carbide crystal and method of manufacturing silicon carbide crystal

 #174
20160243580
2016-08-25

Substrate processing system having susceptorless substrate support with enhanced substrate heating control

 #175
20160236375
2016-08-18

Silicon carbide ingot and method for manufacturing silicon carbide substrate

 #176
20160208417
2016-07-21

Large aluminum nitride crystals with reduced defects and methods of making them

 #177
20160204205
2016-07-14

Source material for electronic device applications

 #178
20160194786
2016-07-07

Self-aligned tunable metamaterials

 #179
20160194750
2016-07-07

Method for forming oxide layer, laminated substrate for epitaxial growth, and method for producing the same

 #180
20160160385
2016-06-09

APPARATUS AND PROCESS FOR CRYSTAL GROWTH

 #181
20160160384
2016-06-09

Method for producing SiC substrate

 #182
20160116607
2016-04-28

Radiation detector, scintillator panel, and method for manufacturing the same

 #183
20160068994
2016-03-10

Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate

 #184
20160060514
2016-03-03

SiC FLUORESCENT MATERIAL AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING ELEMENT

 #185
20160027879
2016-01-28

Dislocation in SiC semiconductor substrate

 #186
20160009556
2016-01-14

Systems and methods for growing a non-phase separated group-III nitride semiconductor alloy

 #187
20150380238
2015-12-31

Method for producing a semiconductor device, and semiconductor device

 #188
20150361580
2015-12-17

DEVICE AND METHOD FOR PRODUCING MULTI SILICON CARBIDE CRYSTALS

 #189
20150299898
2015-10-22

SUSCEPTOR PROCESSING METHOD AND SUSCEPTOR PROCESSING PLATE

 #190
20150287792
2015-10-08

III-nitride based semiconductor structure

 #191
20150280017
2015-10-01

Nanometer sized structures grown by pulsed laser deposition

 #192
20150267319
2015-09-24

Silicon carbide single crystal substrate and process for producing same

 #193
20150259829
2015-09-17

Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acid

 #194
20150218729
2015-08-06

Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them

 #195
20150194309
2015-07-09

Oxygen-doped gallium nitride crystal substrate

 #196
20150187880
2015-07-02

Semiconductor structure with compositionally-graded transition layer

 #197
20150179968
2015-06-25

Ordered organic-organic multilayer growth

 #198
20150144954
2015-05-28

Method for heteroepitaxial growth of III metal-face polarity III-nitrides on substrates with diamond crystal structure and III-nitride semiconductors

 #199
20150144063
2015-05-28

DEVICE FOR A VACUUM AND FOR TRANSMITTING OR ENABLING A MOVEMENT

 #200
20150111129
2015-04-23

Proton conductor and proton conductor device

 #201
20150108495
2015-04-23

Gallium nitride devices with discontinuously graded transition layer

 #202
20150102371
2015-04-16

Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

 #203
20150068457
2015-03-12

Apparatus for producing bulk silicon carbide

 #204
20150060886
2015-03-05

Dislocation in SiC semiconductor substrate

 #205
20150017466
2015-01-15

SELF-ALIGNED TUNABLE METAMATERIALS

 #206
20140374749
2014-12-25

Manganese oxide thin film and oxide laminate

 #207
20140366807
2014-12-18

APPARATUS FOR FABRICATING INGOT AND METHOD OF FABRICATING INGOT

 #208
20140363607
2014-12-11

Silicon carbide single crystal wafer and manufacturing method for same

 #209
20140353680
2014-12-04

Gallium nitride semiconductor structures with compositionally-graded transition layer

 #210
20140352607
2014-12-04

Raw Material for Growth of Ingot, Method for Fabricating Raw Material for Growth of Ingot and Method for Fabricating Ingot

 #211
20140346503
2014-11-27

Manganese oxide thin film and oxide laminate

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Direct graphene growth on metal oxides by molecular epitaxy

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2014-11-13

Method for growing an AIN monocrystal and device for implementing same

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2014-11-13

Silicon carbide powder, method for manufacturing the same and method for growing single crystal

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Nanometer standard prototype and method for manufacturing nanometer standard prototype

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Methods and systems for thin film deposition processes

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Vanadium doped SiC single crystals and method thereof

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2014-08-21

APPARATUS FOR FABRICATING INGOT, METHOD FOR PROVIDING MATERIAL, AND METHOD FOR FABRICATING INGOT

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2014-08-14

Film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device

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2014-08-14

Monocrystalline SiC substrate with a non-homogeneous lattice plane course

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2014-08-07

APPARATUS FOR FABRICATING INGOT

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20140190401
2014-07-10

METHOD, SYSTEM, AND APPARATUS FOR DOPING AND FOR MULTI-CHAMBER HIGH-THROUGHPUT SOLID-PHASE EPITAXY DEPOSITION PROCESS

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20140165905
2014-06-19

APPARATUS FOR FABRICATING INGOT AND METHOD FOR FABRICATING INGOT

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APPARATUS FOR FABRICATING INGOT

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2014-05-15

Gallium nitride devices with aluminum nitride intermediate layer

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2014-05-01

Oxygen-doped gallium nitride single crystal substrate

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2014-04-10

Gallium nitride devices with gallium nitride alloy intermediate layer

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2014-04-03

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM

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2014-03-27

APPARATUS FOR ATTACHING SEED

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2014-03-20

Gallium nitride devices with aluminum nitride alloy intermediate layer

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20140048770
2014-02-20

Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers

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20140048014
2014-02-20

Crystal Growth Apparatus

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20140036004
2014-02-06

Piezoelectric film and method of manufacturing the piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

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20140020748
2014-01-23

Method of forming a germanium layer on a silicon substrate

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2014-01-02

SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL

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III nitride crystal substrate and light-emitting device

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Multilayer substrate structure and method of manufacturing the same

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Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer

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LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE

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Piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

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2013-12-12

METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL

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2013-12-05

Methodology for forming pnictide compositions suitable for use in microelectronic devices

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Ferroelectric crystal film, electronic component, manufacturing method of ferroelectric crystal film, and manufacturing apparatus therefor

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2013-12-05

DIELECTRIC DEVICE

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Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing

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PVD buffer layers for LED fabrication

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2013-10-03

System and process for high-density, low-energy plasma enhanced vapor phase epitaxy

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2013-10-03

Substrate processing system having susceptorless substrate support with enhanced substrate heating control

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Methods for growing a non-phase separated group-III nitride semiconductor alloy

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Load lock having secondary isolation chamber

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2013-09-19

APPARATUS AND METHOD FOR PRODUCTION OF ALUMINUM NITRIDE SINGLE CRYSTAL

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Radical generator and molecular beam epitaxy apparatus

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Electrode active material layer, electrode body, lithium-ion secondary battery, and method of producing electrode active material layer

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Band gap tuning in transition metal oxides by site-specific substitution

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Epitaxy level packaging

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SINGLE CRYSTAL MANUFACTURING APPARATUS

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Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course

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2013-07-04

Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course

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APPARATUS AND METHODS FOR HETEROEPITAXIAL GROWTH USING PULSED LASER AND SPUTTERING DEPOSITION WITH REAL-TIME, IN SITU RHEED IMAGING

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Dislocations in SiC semiconductor substrate

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METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

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SiCAlNsubstrate, and epitaxial wafer

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Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making

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Nitride semiconductor wafer including different lattice constants

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Self-gettering differential pump

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2013-03-07

Metal Oxide Semiconductor Films, Structures, and Methods

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Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device

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VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE

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β-GaOsingle crystal growing method including crystal growth method

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METAL OXIDE STRUCTURES, DEVICES, AND FABRICATION METHODS

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SUBSTRATE HOLDERS AND METHODS OF SUBSTRATE MOUNTING

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METHOD OF MANUFACTURING TRANSPARENT OXIDE THIN FILM

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Method and apparatus for the selective deposition of epitaxial germanium stressor alloys

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METHOD AND APPARATUS FOR LASER ABLATION

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Epitaxial wafer and semiconductor element

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2012-09-20

Magnetic material

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IBAD apparatus and IBAD method

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Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

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Silicon carbide crystal and method of manufacturing silicon carbide crystal

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2012-07-19

SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME

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Methods for epitaxial silicon growth

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2012-07-12

Multiferroics that are both ferroelectric and ferromagnetic at room temperature

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Gallium nitride light emitting devices on diamond

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2012-06-21

Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer

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2012-05-17

Gallium nitride semiconductor structures with compositionally-graded transition layer

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2012-04-26

MOLECULAR BEAM EPITAXY APPARATUS FOR PRODUCING WAFERS OF SEMICONDUCTOR MATERIAL

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2012-04-26

Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus

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2012-04-19

Ordered organic-organic multilayer growth

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2012-02-23

RARE-EARTH-DOPED ALUMINUM-GALLIUM-OXIDE FILMS IN THE CORUNDUM-PHASE AND RELATED METHODS

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2012-02-16

Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal

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2012-02-09

Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same

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2012-02-02

Silicon carbide single crystal and manufacturing method of the same

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2012-01-26

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF

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2011-12-22

Ferroic materials having domain walls and related devices

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2011-12-15

Ferrite material having composition gradient for measuring magneto-optical-effect properties and method for evaluating properties of ferrite

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2011-12-08

Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution

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2011-11-17

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE

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2011-10-27

Ammonothermal method for growth of bulk gallium nitride

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2011-10-27

SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

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2011-10-20

MANUFACTURING METHOD FOR CRYSTAL, CRYSTAL, AND SEMICONDUCTOR DEVICE