ClassID:

121280

C30B23/08 - CPC Classification

Classification description:

Single-crystal growth by condensing evaporated or sublimed materials; Epitaxial-layer growth by condensing ionised vapours

Recent Application in this class:
#1
20260002284
2026-01-01

HOMOEPITAXIAL THIN FILM, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREOF

#2
20250275205
2025-08-28

P-TYPE SPINEL STRUCTURES AS A P-N HETEROEPITAXIAL INTERFACE TO B-GA2O3

#3
20250226186
2025-07-10

HEATERS AND PLASMA GENERATORS FOR GAS ACTIVATION, AND RELATED CHAMBER AND FOR SEMICONDUCTOR MANUFACTURING

#4
20250154681
2025-05-15

ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION PARAMETERS

#5
20240229296
2024-07-11

MULTILAYER BODY

#6
20240172564
2024-05-23

PIEZOELECTRIC FILM, METHOD OF PRODUCING PIEZOELECTRIC FILM, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC DEVICE

#7
20240133075
2024-04-25

MULTILAYER BODY

#8
20240114800
2024-04-04

Deposition Of Piezoelectric Films

#9
20240027661
2024-01-25

LARGE-AREA SINGLE-CRYSTAL SILVER THIN-FILM STRUCTURE USING SINGLE-CRYSTAL COPPER THIN-FILM BUFFER LAYER AND MANUFACTURING METHOD THEREFOR

#10
20230261258
2023-08-17

Ion conductive material including halide material, electrolyte including the same, and methods of forming the same

#11
20230260785
2023-08-17

Method for manufacturing sputtering target, method for forming oxide film, and transistor

#12
20220263126
2022-08-18

Ion conductive material including complex metal halide, electrolyte including the same, and methods of forming the same

#13
20220165469
2022-05-26

Tunable templating layers for perpendicularly magnetized Heusler films

#14
20220020586
2022-01-20

Method for manufacturing sputtering target, method for forming oxide film, and transistor

#15
20210320327
2021-10-14

Ion conductive material, electrolyte including ion conductive material, and methods of forming

#16
20210310153
2021-10-07

Epi-growth apparatus of separate chamber type

#17
20210285128
2021-09-16

Apparatus for growing single crystal metal-oxide EPI wafer

#18
20210123158
2021-04-29

Single crystal epitaxial layer having a rhombohedral lattice

#19
20210047751
2021-02-18

Aluminum nitride single crystals having large crystal augmentation parameters

#20
20210047749
2021-02-18

DIAMETER EXPANSION OF ALUMINUM NITRIDE CRYSTALS DURING GROWTH BY PHYSICAL VAPOR TRANSPORT

#21
20200277185
2020-09-03

METHODS FOR IMPROVING LOADING RATIO OF HYDROGEN GAS

#22
20200144059
2020-05-07

Method for manufacturing sputtering target, method for forming oxide film, and transistor

#23
20180282896
2018-10-04

FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFOR

#24
20180197571
2018-07-12

TRANSLATING LAYER FOR COMBINING FCC AND HCP LATTICE STRUCTURES

#25
20170369986
2017-12-28

METHOD FOR PREPARING COPPER THIN FILM BY USING SINGLE CRYSTAL COPPER TARGET

#26
20170268122
2017-09-21

Molten target sputtering (MTS) deposition for enhanced kinetic energy and flux of ionized atoms

#27
20170216930
2017-08-03

SURFACE-COATED CUTTING TOOL HAVING EXCELLENT CHIP RESISTANCE

#28
20170186511
2017-06-29

Electrode having nano mesh multi-layer structure, using single crystal copper, and manufacturing method therefor

#29
20170178904
2017-06-22

Method for manufacturing sputtering target, method for forming oxide film, and transistor

#30
20170178903
2017-06-22

Single crystal rhombohedral epitaxy of SiGe on sapphire at 450° C.-500° C. substrate temperatures

#31
20170170384
2017-06-15

Method for manufacturing crystal film

#32
20170145589
2017-05-25

Rhombohedron epitaxial growth with molten target sputtering

#33
20170145588
2017-05-25

Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus

#34
20160362812
2016-12-15

OFF-AXIS SPUTTERING DEPOSITION FOR GROWTH OF SINGLE CRYSTALLINE FILMS OF A BROAD RANGE OF COMPLEX MATERIALS

#35
20160355948
2016-12-08

Epitaxy base, semiconductor light emitting device and manufacturing methods thereof

#36
20160293199
2016-10-06

METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM

#37
20160254439
2016-09-01

Process for making lead zirconate titanate (PZT) layers and/or platinum electrodes and products thereof

#38
20160194786
2016-07-07

Self-aligned tunable metamaterials

#39
20160160342
2016-06-09

METHOD FOR MANUFACTURING SPUTTERING TARGET, METHOD FOR FORMING OXIDE FILM, AND TRANSISTOR

#40
20160116607
2016-04-28

Radiation detector, scintillator panel, and method for manufacturing the same

#41
20150329988
2015-11-19

Use of freestanding nitride veneers in semiconductor devices

#42
20150308013
2015-10-29

METHOD OF PRODUCING FREE-STANDING NET-SHAPE SAPPHIRE

#43
20150206547
2015-07-23

PERPENDICULAR MAGNETIC RECORDING MEDIUM, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC RECORDING/REPRODUCTION APPARATUS

#44
20150167198
2015-06-18

Substrate structures and methods

#45
20150102371
2015-04-16

Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

#46
20150017466
2015-01-15

SELF-ALIGNED TUNABLE METAMATERIALS

#47
20140342488
2014-11-20

Preparation Method of Manufacturing Thermoelectric Nanowires Having Core/Shell Structure

#48
20140287160
2014-09-25

Vapour deposition process for the preparation of a phosphate compound

#49
20140093744
2014-04-03

METHOD FOR DEPOSITING CRYSTALLINE TITANIA NANOPARTICLES AND FILMS

#50
20140072727
2014-03-13

Vapour deposition process for the preparation of a chemical compound

#51
20130334568
2013-12-19

Multilayer substrate structure and method of manufacturing the same

#52
20130333611
2013-12-19

LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE

#53
20130323534
2013-12-05

Ferroelectric crystal film, electronic component, manufacturing method of ferroelectric crystal film, and manufacturing apparatus therefor

#54
20130260537
2013-10-03

System and process for high-density, low-energy plasma enhanced vapor phase epitaxy

#55
20130240876
2013-09-19

Non-polar plane of wurtzite structure material

#56
20130019927
2013-01-24

USE OF FREESTANDING NITRIDE VENEERS IN SEMICONDUCTOR DEVICES

#57
20110027928
2011-02-03

PULSED LASER DEPOSITION OF HIGH QUALITY PHOTOLUMINESCENT GaN FILMS

#58
20090311513
2009-12-17

Method for depositing crystalline titania nanoparticles and films

#59
20090081109
2009-03-26

GaN CRYSTAL SHEET

#60
20080254235
2008-10-16

Pulsed laser deposition of high quality photoluminescent GaN films

#61
20080187684
2008-08-07

Method for depositing crystalline titania nanoparticles and films

#62
20080152903
2008-06-26

System and process for high-density, low-energy plasma enhanced vapor phase epitaxy