121295 ⎘
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth; Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
SINGLE-CRYSTAL DIAMOND SUBSTRATE WITH TWIN DEFECTS REMOVED AND METHOD FOR MANUFACTURING THE SAME
#2GROWTH SUBSTRATE WAFER FOR HIGH-PERFORMANCE GAN SWITCHING POWER DEVICES, EPITAXY WAFER USING THE SAME, AND MANUFACTURING METHOD THEREOF
#3SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING A BUFFER LAYER AND MANUFACTURING METHOD
#4CUBIC GAN SEMICONDUCTOR DEVICE MANUFACTURING METHODS
#5UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND METHOD FOR PRODUCING THEM
#6SiC EPITAXIAL WAFER AND SiC DEVICE
#7METHOD FOR PRODUCING A SEMICONDUCTOR BODY, SEMICONDUCTOR BODY AND POWER SEMICONDUCTOR DEVICE
#8LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON
#9METHOD OF MANUFACTURING EPITAXIAL STRUCTURE AND EPITAXIAL STRUCTURE
#10SILICON CARBIDE EPITAXIAL WAFER, AND PREPARATION METHOD THEREFOR AND USE THEREOF
#11METHOD FOR MANUFACTURING GAN HEMT POWER SEMICONDUCTOR EPITAXIAL WAFERS WITH HIGH-QUALITY GAN CHANNEL REGION THROUGH GROWTH TEMPERATURE MODULATION
#12EPITAXIAL WAFER FOR GAN HEMT WITH ENHANCED ELECTRICAL INSULATION AND MANUFACTURING METHOD THEREOF
#13SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#14HIGH DEFECT SiC WAFER WITH DEVICE LAYER AND METHODS OF MANUFACTURE
#15METHOD FOR MANUFACTURING GROUP 3 NITRIDE SEMICONDUCTOR TEMPLATE
#16SUBSTRATES FOR III-NITRIDE EPITAXY
#17NITRIDE CRYSTAL SUBSTRATE AND PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE
#18HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
#19LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES
#20COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13 ELEMENT NITRIDE
#21PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL SUBSTRATE
#22METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER
#23METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSICALLY CARBON-DOPED GROUP III-NITRIDE FILMS
#24HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING SAME
#25INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE
#26NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
#27PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERMEDIATE
#28PROCESS FOR GROWING ACTIVE LAYERS IN SEQUENCE
#29FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
#30UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE, AND MANUFACTURING METHOD THEREOF
#31GROWTH METHOD AND STRUCTURE OF LED EPITAXY
#32COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
#33METHOD OF PHASE-TRANSITIONING THREE-DIMENSIONAL DIRAC SEMIMETAL INTO TWO-DIMENSIONAL WEYL SEMIMETAL AND SEMIMETAL THAT UNDERGOES PHASE TRANSITION BY THE SAME
#34NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
#35METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
#36METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND LAMINATE STRUCTURE
#37SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE
#38DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING SAME
#39SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERMEDIATE
#40DEFORMATION COMPENSATION METHOD FOR GROWING THICK GALIUM NITRIDE ON SILICON SUBSTRATE
#41SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND TEMPLATE SUBSTRATE
#42PHASE STABILIZED GROWTH OF MONOCLINIC-GALLIUM OXIDE ON THERMALLY CONDUCTING MATERIALS
#43SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND TEMPLATE SUBSTRATE
#44NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE
#45DYNAMIC HVPE OF COMPOSITIONALLY GRADED BUFFER LAYERS
#46SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
#47METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF LITHIUM NIOBATE BY TRANSFERRING A SEED LAYER OF YTTRIA-STABILIZED ZIRCONIA TO A SILICON CARRIER SUBSTRATE AND EPITAXIALLY GROWING THE MONOCRYSTALLINE LAYER OF LITHIUM NIOBATE AND SUBSTRATE FOR EPITAXIAL GROWTH OF A MONOCRYSTALLINE LAYER OF LITHIUM NIOBATE
#48METHOD FOR GROWING SINGLE CRYSTALS
#49EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, DEVICE AND METHOD OF MANUFACTURING EPITAXIAL STRUCTURE
#50METHOD FOR PRODUCING A CRYSTALLINE LAYER OF PZT MATERIAL BY TRANSFERRING A SEED LAYER OF SRTIO3 TO A SILICON CARRIER SUBSTRATE AND EPITAXIALLY GROWING THE CRYSTALLINE LAYER OF PZT, AND SUBSTRATE FOR EPITAXIAL GROWTH OF A CRYSTALLINE LAYER OF PZT
#51EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#52EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#53Superconducting Compounds and Methods for Making the Same
#54METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITAXIAL REACTOR
#55NITRIDE EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE
#56LARGE-DIAMETER SUBSTRATE FOR GROUP-III NITRIDE EPITAXIAL GROWTH AND METHOD FOR PRODUCING THE SAME
#57DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
#58BASE SUBSTRATE FOR GROUP III-V COMPOUND CRYSTALS AND PRODUCTION METHOD FOR SAME
#59LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON
#60LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON
#61EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#62Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC
#63METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE
#64METHOD AND STRUCTURE OF SINGLE CRYSTAL ELECTRONIC DEVICES WITH ENHANCED STRAIN INTERFACE REGIONS BY IMPURITY INTRODUCTION
#65EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER
#66FABRICATION OF SINGLE-CRYSTALLINE IONICALLY CONDUCTIVE MATERIALS AND RELATED ARTICLES AND SYSTEMS
#67Preparation method for semiconductor structure
#68III NITRIDE SEMICONDUCTOR WAFERS
#69Semiconductor Structure
#70Semiconductor device having a planar III-N semiconductor layer and fabrication method
#71Method for growing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
#72Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device
#73Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material
#74GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE
#75Method for producing a nitride layer
#76Incorporating semiconductors on a polycrystalline diamond substrate
#77Graphene hybrids for biological and chemical sensing
#78GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL
#79SEMICONDUCTOR MATERIAL BASED ON METAL NANOWIRES AND POROUS NITRIDE AND PREPARATION METHOD THEREOF
#80Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate
#81Nucleation layer deposition method
#82Group III nitride semiconductor device and production method therefor
#83Method for manufacturing nitride semiconductor device
#84Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28< =x<=0.7 on beta Ga2O3(100) or (−201) substrates by chemical vapor deposition
#85SUBSTRATES FOR III-NITRIDE EPITAXY
#86HIGHLY-TEXTURED THIN FILMS
#87Integrated circuit devices with an engineered substrate
#88UNDERLYING SUBSTRATE
#89Gallium oxide film based on sapphire substrate as well as growth method and application thereof
#90Method for producing GaN laminate substrate having front surface which is Ga polarity surface
#91Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#92Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure
#93Micro light emitting diode display panel with option of choosing to emit light both or respectively of light-emitting regions
#94Method For Depositing A Crystal Layer At Low Temperatures, In Particular A Photoluminescent IV-IV Layer On An IV Substrate, And An Optoelectronic Component Having Such A Layer
#95GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
#96Method for producing a mechanical vibrator comprising epitaxially growing a cubic crystal on a material layer to form a laminate structure which is patterned to form a vibrator shape part
#97Diamond crystal
#98GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
#99Process for obtaining a nitride layer
#100Diamond substrate and method for manufacturing the same
#101METHOD FOR FABRICATING EPITAXIAL HALIDE PEROVSKITE FILMS AND DEVICES
#102Method for producing a crystalline layer in a III-N compound by van der Waals epitaxy from graphene
#103Process for epitaxying gallium selenide on a [111]-oriented silicon substrate
#104Superconducting compounds and methods for making the same
#105Method of manufacturing high electron mobility transistor and high electron mobility transistor
#106Method for producing a monocrystalline layer of lithium niobate by transferring a seed layer of yttria-stabilized zirconia to a silicon carrier substrate and epitaxially growing the monocrystalline layer of lithium niobate and substrate for epitaxial growth of a monocrystalline layer of lithium niobate
#107Method for preparing a heterostructure
#108Method for producing a crystalline layer of PZT material by transferring a seed layer of SrTiOto a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT
#109Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxtial growth of a monocrystalline layer of GaAs material
#110Method for manufacturing a monocrystalline layer of diamond or iridium material and substrate for epitaxially growing a monocrystalline layer of diamond or iridium material
#111SEMICONDUCTOR EPITAXIAL STRUCTURE AND METHOD OF FORMING THE SAME
#112Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#113Method of depositing gallium nitride on a substrate
#114COMPOUND SEMICONDUCTOR SUBSTRATE
#115METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE
#116Micro light emitting diode chip and display panel having a backplane and a plurality of sub-pixels regions
#117Epitaxial silicon carbide single crystal wafer and process for producing the same
#118Semiconductor phosphor
#119Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device, and method of manufacturing semiconductor device
#120GALLIUM NITRIDE MATERIALS AND METHODS
#121Growth of A-B crystals without crystal lattice curvature
#122Method for fabricating a monocrystalline structure
#123RAMOsubstrate and method of manufacture thereof, and group III nitride semiconductor
#124Method for Preparing GaN Substrate Material
#125SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor device
#126III-V or II-VI compound semiconductor films on graphitic substrates
#127Group III nitride semiconductor and method for producing same
#128Nitride semiconductor template, method for manufacturing nitride semiconductor template, and method for manufacturing nitride semiconductor free-standing substrate
#129Methods of manufacturing vertical semiconductor diodes using an engineered substrate
#130Method for epitaxial growth of single crystalline heterogeneous 2D materials and stacked structure
#131Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#132Elimination of Basal Plane Dislocation and Pinning the Conversion Point Below the Epilayer Interface for SiC Power Device Applications
#133Buffer layer for Gallium Nitride-on-Silicon epitaxy
#134Group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor substrate
#135Method of manufacturing group III nitride semiconductor substrate, group III nitride semiconductor substrate, and bulk crystal
#136SUBSTRATES FOR III-NITRIDE EPITAXY
#137SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
#138Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#139Diamond materials comprising multiple CVD grown, small grain diamonds, in a single crystal diamond matrix
#140Diamond materials comprising multiple CVD grown, small grain diamonds, in a single crystal diamond matrix
#141Electronic power devices integrated with an engineered substrate
#142SEED WAFER FOR GaN THICKENING USING GAS- OR LIQUID-PHASE EPITAXY
#143HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
#144Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction
#145SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor device
#146Semiconductor substrate
#147GALLIUM NITRIDE MATERIALS AND METHODS
#148Gallium nitride materials and methods
#149Flexible Single-Crystal Semiconductor Heterostructures and Methods of Making Thereof
#150Method for fabricating InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD)
#151Growth of crystalline materials on two-dimensional inert materials
#152Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements
#153EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE ON THIN FILMS OF COBALT
#154Diamond substrate
#155Methods of forming a vertical semiconductor diode using an engineered substrate
#156Method for manufacturing electronic component for heterojunction provided with buried barrier layer
#157Method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride
#158Buffer layers having composite structures
#159Production method for group III nitride semiconductor
#160Architectures enabling back contact bottom electrodes for semiconductor devices
#161Method for producing group III nitride semiconductor light-emitting device
#162CRYSTAL, CRYSTALLINE FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTALLINE FILM, AND METHOD FOR PRODUCING CRYSTALLINE FILM
#163METHOD FOR PRODUCING CRYSTALLINE FILM
#164Semiconductor method having annealing of epitaxially grown layers to form semiconductor structure with low dislocation density
#165Method for producing SiC epitaxial wafer including forming epitaxial layer under different conditions
#166Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#167REDUCTION OF WAFER BOW DURING GROWTH OF EPITAXIAL FILMS
#168Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
#169Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#170Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#171Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
#172Process of forming semiconductor substrate by use of normalized reflectivity
#173Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device and method of manufacturing semiconductor device
#174Epitaxial substrate and method for forming the same
#175Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt
#176Nitride semiconductor light-emitting element
#177Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#178Patterned layer design for group III nitride layer growth
#179LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION
#180Method of producing n-type ohmic electrode and n-type ohmic electrode, n-type electrode, and III nitride semiconductor light-emitting device
#181METHOD FOR PRODUCING SEMICONDUCTOR EPITAXIAL WAFER AND SEMICONDUCTOR EPITAXIAL WAFER
#182Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
#183Gallium nitride substrate
#184Self-aligned nanodots for 3D NAND flash memory
#185SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, CRYSTAL, AND MANUFACTURING METHOD FOR SAME
#186Method and apparatus for forming device quality gallium nitride layers on silicon substrates
#187Foundation substrate for producing diamond film and method for producing diamond substrate using same
#188SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor device
#189Micro light emitting diode chip and display panel having semiconductor epitaxial structure
#190Oriented alumina substrate for epitaxial growth
#191Oriented alumina substrate for epitaxial growth
#192VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
#193Manufacturing method of gallium nitride substrate
#194Method of manufacturing a gallium nitride substrate
#195GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate
#196Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device, and method of manufacturing semiconductor device
#197Growth of A-B crystals without crystal lattice curvature
#198Method of producing self-supporting nitride semiconductor substrate
#199Electronic power devices integrated with an engineered substrate
#200Vertical semiconductor diode manufactured with an engineered substrate
#201Superconductor compositions
#202Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
#203Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
#204Growth of epitaxial gallium nitride material using a thermally matched substrate
#205NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD FOR MANUFACTURING SAME
#206Apparatus for manufacturing a second substrate on a first substrate including removal of the first substrate
#207Methods for high growth rate deposition for forming different cells on a wafer
#208Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device
#209Nitride semiconductor template, manufacturing method thereof, and epitaxial wafer
#210Epitaxial silicon carbide single crystal wafer and process for producing the same
#211Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic device
#212Group III nitride semiconductor, and method for producing same
#213EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING EPITAXIAL WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
#214Patterned layer design for group III nitride layer growth
#215Method of forming a composite substrate
#216Group III nitride substrate and method for producing group III nitride crystal
#217Method for manufacturing nitride semiconductor template
#218Selective nanoscale growth of lattice mismatched materials
#219Buffer layers having composite structures
#220Method and apparatus for forming device quality gallium nitride layers on silicon substrates
#221Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow
#222Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
#223Method for making epitaxial structure
#224Enhanced defect reduction for heteroepitaxy by seed shape engineering
#225Local carbon-supply device and method for preparing wafer-level graphene single crystal by local carbon supply
#226Method for depositing a crystal layer at low temperatures, in particular a photoluminescent IV-IV layer on an IV substrate, and an optoelectronic component having such a layer
#227Non-polar blue light LED epitaxial wafer based on LAO substrate and preparation method thereof
#228Compound semiconductor substrate
#229Nitride semiconductor single crystal substrate manufacturing method
#230Method for the production of a nitride compound semiconductor layer
#231Method for producing a semiconductor layer sequence
#232Semiconductor material having a compositionally-graded transition layer
#233Method for producing semiconductor epitaxial wafer and semiconductor epitaxial wafer
#234Diamond substrate and method for manufacturing diamond substrate
#235III-V or II-VI compound semiconductor films on graphitic substrates
#236Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth
#237Epitaxy base, semiconductor light emitting device and manufacturing methods thereof
#238METHOD FOR PRODUCING A TEMPLATE FOR EPITAXIAL GROWTH HAVING A SAPPHIRE (0001) SUBSTRATE, AN INITIAL-STAGE AlN LAYER AND LATERALLY OVERGROWN AlxGayN (0001) LAYER
#239Structures and devices including germanium-tin films and methods of forming same
#240Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element
#241Composite substrate for light-emitting element and production method therefor
#242Lattice-constant formatted epitaxial template for light emitting devices and a method for making the same
#243Template for epitaxial growth, method for producing the same, and nitride semiconductor device
#244Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
#245Process for making lead zirconate titanate (PZT) layers and/or platinum electrodes and products thereof
#246Stress mitigating amorphous SiOinterlayer
#247Semiconductor wafer and a method for producing the semiconductor wafer
#248Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#249Defect reduction using aspect ratio trapping
#250InGaAs film grown on Si substrate and method for preparing the same
#251Epitaxial diamond layer and method for the production thereof
#252Substrates for semiconductor devices
#253Textured substrate for forming epitaxial film and method for producing the same
#254Epitaxial Structure and Growth Method of Group-III Nitrides
#255Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same
#256Method for determining preferential deposition parameters for a thin layer of III-V material
#257Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
#258SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
#259Electro-optical device, manufacturing method for electro-optical device, and electronic apparatus
#260Production of free-standing crystalline material layers
#261Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion
#262METHOD OF PRODUCING FREE-STANDING NET-SHAPE SAPPHIRE
#263Substrate for epitaxial growth, manufacturing method therefor, and substrate for superconducting wire
#264Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
#265Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
#266Controlling GaAsP/SiGe interfaces
#267LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION
#268MECHANICALLY ROBUST SILICON SUBSTRATE HAVING GROUP IIIA-N EPITAXIAL LAYER THEREON
#269VAPOR PHASE GROWTH METHOD
#270Method of growing gallium nitride-based crystal and heat treatment apparatus
#271Pre-cleaning method and preparation method of low-temperature polysilicon thin film, liquid crystal display device, and manufacturing system thereof
#272REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate
#273Substrate structures and methods
#274Selective nanoscale growth of lattice mismatched materials
#275Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
#276Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
#277Semipolar nitride semiconductor structure and method of manufacturing the same
#278Elastic wave device including multilayer metal film
#279Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
#280Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device
#281Apparatus for forming silicon-containing thin film
#282Epitaxial growth of compound semiconductors using lattice-tuned domain-matching epitaxy
#283Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
#284Method for manufacturing a single crystal diamond
#285Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer
#286Methods of forming films including germanium tin and structures and devices including the films
#287Nanostructures and methods for manufacturing the same
#288Monolithic integrated lattice mismatched crystal template and preparation method thereof
#289Growth substrate and light emitting device comprising the same
#290Defect reduction using aspect ratio trapping
#291Synthetic diamond coated compound semiconductor substrates
#292Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#293Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
#294Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method
#295Nitride semiconductor structure, multilayer structure, and nitride semiconductor light-emitting element
#296Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing
#297Growth of crystalline materials on two-dimensional inert materials
#298Crystal layered structure and method for manufacturing same, and semiconductor element
#299Template layers for heteroepitaxial deposition of III-nitride semiconductor materials using HVPE processes
#300Method of growing diamond thin film