121295 ⎘
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth; Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
#302Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
#303Group III-V substrate material with thin buffer layer and methods of making
#304METHOD FOR PRODUCING GRAPHENE, AND GRAPHENE PRODUCED BY THE METHOD
#305Method for stress reduced manufacturing semiconductor devices
#306Method for growing epitaxial diamond
#307Co-integration of elemental semiconductor devices and compound semiconductor devices
#308Co-integration of elemental semiconductor devices and compound semiconductor devices
#309Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
#310Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
#311METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON
#312Semiconductor stacked body, method for manufacturing same, and semiconductor element
#313Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers
#314Diamond producing method and DC plasma enhanced CVD apparatus
#315Growing of gallium-nitrade layer on silicon substrate
#316Multilayer substrate structure and method of manufacturing the same
#317LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE
#318Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture
#319Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
#320Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
#321Method for making an epitaxial structure with carbon nanotube layer
#322Method for making epitaxial structure
#323Method of forming a composite substrate
#324Base material for growing single crystal diamond and method for producing single crystal diamond substrate
#325BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE
#326Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
#327Method of manufacturing substrate
#328Method of manufacturing GaN-based film and composite substrate used therefor
#329METHOD FOR PRODUCING DIAMOND LAYERS AND DIAMONDS PRODUCED BY THE METHOD
#330GALLIUM NITRIDE GROWTH METHOD ON SILICON SUBSTRATE
#331Epitaxial substrate for semiconductor element, semiconductor element, PN junction diode, and method for manufacturing an epitaxial substrate for semiconductor element
#332III-nitride growth method on silicon substrate
#333Method of forming seed layer and method of forming silicon-containing thin film
#334Nitride semiconductor wafer including different lattice constants
#335Method of producing template for epitaxial growth and nitride semiconductor device
#336Epitaxial substrate and method for manufacturing epitaxial substrate
#337Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrate
#338Epitaxial substrate and method for manufacturing epitaxial substrate
#339EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
#340Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
#341METHODS FOR MODIFYING CRYSTALLOGRAPHIC SYMMETRY ON THE SURFACE OF A SILICON WAFER
#342EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
#343Epitaxial wafer, photodiode, optical sensor device, and methods for producing epitaxial wafer and photodiode
#344Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
#345Methods for improved growth of group III nitride semiconductor compounds
#346Solar cell and method for fabricating the same
#347Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layer
#348METHOD FOR PRODUCING NITRIDE COMPOUND SEMICONDUCTOR SUBSTRATE, AND NITRIDE COMPOUND SEMICONDUCTOR FREE-STANDING SUBSTRATE
#349Semiconductor substrate and method for producing semiconductor substrate
#350Low-temperature selective epitaxial growth of silicon for device integration
#351Defect reduction using aspect ratio trapping
#352Growth substrate and light emitting device
#353Layered body having a single crystal layer
#354Nitride semiconductor substrate
#355SEASONING OF DEPOSITION CHAMBER FOR DOPANT PROFILE CONTROL IN LED FILM STACKS
#356METHOD FOR MAKING FLAT SUBSTRATE FROM INCREMENTAL-WIDTH NANORODS
#357METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
#358Substrate structure and fabrication thereof, and light emitting diode devices fabricated from the same
#359III-V compound crystal and semiconductor electronic circuit element
#360Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
#361Gallium nitride semiconductor structures with compositionally-graded transition layer
#362Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#363METHOD FOR MAKING A SOLID STATE SEMICONDUCTOR DEVICE
#364Miscut semipolar optoelectronic device
#365Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device
#366AlInGaN mixture crystal substrate, method of growing same and method of producing same
#367Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
#368Sapphire substrate and nitride semiconductor light emitting device
#369Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base material
#370METHOD OF HETEROEPITAXY
#371HYBRID DEPOSITION CHAMBER FOR IN-SITU FORMATION OF GROUP IV SEMICONDUCTORS & COMPOUNDS WITH GROUP III-NITRIDES
#372MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR EPITAXIAL SUBSTRATE
#373Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
#374Solar cell and method for fabricating the same
#375Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
#376Zirconium and hafnium boride alloy templates on silicon for nitride integration applications
#377Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer
#378Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers
#379Method of Gallium Nitride growth over metallic substrate using Vapor Phase Epitaxy
#380Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer
#381Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
#382LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF
#383Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
#384BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE
#385Method of high growth rate deposition for group III/V materials
#386BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE
#387Semiconductor substrate with cobalt silicide buffer layer and its manufacturing method
#388METHOD FOR FABRICATING A SEMI-POLAR NITRIDE SEMICONDUCTOR
#389Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same
#390Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
#391Substrate for growing a III-V light emitting device
#392Controlled polarity group III-nitride films and methods of preparing such films
#393METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
#394Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#395Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same
#396Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
#397III-V nitride substrate boule and method of making and using the same
#398Growth Method of Non-Polarized-Plane InN
#399Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer
#400NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, AND LASER DIODE
#401GaN LAYER CONTAINING MULTILAYER SUBSTRATE, PROCESS FOR PRODUCING SAME, AND DEVICE
#402BASE STRUCTURE FOR III-V SEMICONDUCTOR DEVICES ON GROUP IV SUBSTRATES AND METHOD OF FABRICATION THEREOF
#403Nitride semiconductor substrate
#404Compound semiconductor substrate having multiple buffer layers
#405GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
#406Epitaxial structure having low defect density
#407Miscut semipolar optoelectronic device
#408Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
#409METHOD OF FABRICATING SEMI-INSULATING GALLIUM NITRIDE USING AN ALUMINUM GALLIUM NITRIDE BLOCKING LAYER
#410Nitride semiconductor substrate
#411Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device
#412III-V compound crystal and semiconductor electronic circuit element
#413Method for manufacturing nitride semiconductor device
#414GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY
#415Method for making group III nitride articles
#416Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
#417Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
#418MANUFACTURING METHOD OF STRAINED SI SUBSTRATE
#419GROUP III NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE AND PRODUCTION METHOD THEREOF
#420Method of manufacturing nitride semiconductor and nitride semiconductor element
#421Semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer
#422Method for preparing substrate having monocrystalline film
#423AlInGaN mixture crystal substrate, method of growing same and method of producing same
#424Wafer structure and epitaxial growth method for growing the same
#425Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device
#426Gallium nitride materials and methods
#427Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer
#428FORMATION OF LATTICE-TUNING SEMICONDUCTOR SUBSTRATES
#429Free-Standing Substrate, Method for Producing the Same and Semiconductor Light-Emitting Device
#430GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate
#431Gallium nitride-on-silicon interface
#432Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element
#433SELF-SUPPORTED NITRIDE SEMICONDUCTOR SUBSTRATE AND ITS PRODUCTION METHOD, AND LIGHT-EMITTING NITRIDE SEMICONDUCTOR DEVICE USING IT
#434NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE
#435Single-Crystal GaN Substrate
#436Method of fabricating heteroepitaxial microstructures
#437Solid solution wide bandgap semiconductor materials
#438Nanostructures and methods for manufacturing the same
#439Method of preparing vertically-aligned carbon nanotube under atmospheric and cold-wall heating treatments and making the same
#440Method for growing nitride semiconductor
#441Zirconium and hafnium boride alloy templates on silicon for nitride integration applications
#442Process for integrating a III-N type component on a (001) nominal silicium substrate
#443Nanostructures and methods for manufacturing the same
#444Nanostructures and methods for manufacturing the same
#445Defect reduction using aspect ratio trapping
#446Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#447Crystal film, crystal substrate, and semiconductor device
#448Germanium deposition
#449Solid solution wide bandgap semiconductor materials
#450Method of growing gallium nitride crystal
#451Method of growing gallium nitride crystal and gallium nitride substrate
#452Group-III nitride vertical-rods substrate
#453Method of growing non-polar m-plane nitride semiconductor
#454Nitride-based semiconductor substrate, method of making the same and epitaxial substrate for nitride-based semiconductor light emitting device
#455Manufacture of cadmium mercury telluride on patterned silicon
#456Method for improved growth of semipolar (Al,In,Ga,B)N
#457Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same
#458Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same
#459Crystal firm, crystal substrate, and semiconductor device
#460Semiconductor device and method for fabricating the same
#461Method of fabricating GaN substrate
#462Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer
#463Substrate for growing a III-V light emitting device
#464Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
#465Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
#466Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
#467A1InGaN mixture crystal substrate, method of growing same and method of producing same
#468Nano-air-bridged lateral overgrowth of GaN semiconductor layer
#469Method for significant reduction of dislocations for a very high A1 composition A1GaN layer
#470Controlled polarity group III-nitride films and methods of preparing such films
#471Nitride semiconductor thin film and method for growing the same
#472GaN semiconductor devices with A1N buffer grown at high temperature and method for making the same
#473Formation of highly dislocation free compound semiconductor on a lattice mismatched substrate
#474Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device
#475Substrate for stressed systems and method of making same
#476Aluminum nitride single-crystal multi-layered substrate
#477Epitaxial growth method
#478Wafer structure and epitaxial growth method for growing the same
#479Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
#480Substrate for stressed systems and method of making same
#481Substrate for stressed systems and method of making same
#482Epitaxial growth method and substrate for epitaxial growth
#483Methods of fabricating semiconductor heterostructures
#484Method of manufacturing a wafer
#485Method of fabricating heteroepitaxial microstructures
#486Production method for light emitting element
#487Method of Manufacturing Single-Crystal GaN Substrate, and Single-Crystal GaN Substrate
#488Semiconductor device and method for fabricating the same
#489Germanium deposition
#490Nitride semiconductor thin film and method for growing the same
#491Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
#492AlInGaN mixture crystal substrate
#493Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
#494Self-powered ultraviolet photodetection performance using Au/Ta2O5/GAN: metal-insulator-semiconductor (MIS) heterostructure