121297 ⎘
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth; Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
Method of manufacturing an epitaxial wafer comprising measuring a level difference between a front surface of a susceptor and an upper surface of a lift pin and adjusting a ratio of the heat source output
#302NANOSCALE WIRES WITH TIP-LOCALIZED JUNCTIONS
#303VACUUM PLATFORM WITH PROCESS CHAMBERS FOR REMOVING CARBON CONTAMINANTS AND SURFACE OXIDE FROM SEMICONDUCTOR SUBSTRATES
#304Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus
#305Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof
#306Phosphorus doped diamond electrode with tunable low work function for emitter and collector applications
#307SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
#308Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus
#309Method of fabricating plates of super-hard material using a collimated cutting beam
#310Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
#311Method for producing a silicon single crystal doped with red phosphorous with reduced number of stacking faults and method for producing a silicon wafer using the same
#312SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#313Group 13 element nitride crystal layer and function element
#314Group 13 element nitride crystal substrate and function element
#315Silicon carbide single crystal substrate and method for manufacturing the same
#316Method for manufacturing diamond substrate
#317Method for manufacturing group III nitride substrate formed of a group III nitride crystal
#318Method for manufacturing diamond substrate
#319Single-crystal diamond material, single-crystal diamond chip, and perforated tool
#320SiC epitaxial wafer and method for manufacturing the same
#321Method of fabricating a diamond membrane
#322Diamond composite body, substrate, diamond, tool including diamond, and method for manufacturing diamond
#323Method of manufacturing diamond, diamond, diamond composite substrate, diamond joined substrate, and tool
#324N-type aluminum nitride monocrystalline substrate
#325Method for manufacturing SiC epitaxial wafer and SiC epitaxial wafer
#326Method of forming silicon layer in manufacturing semiconductor device and recording medium
#327Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
#328Method of producing a silicon carbide single-crystal substrate by epitaxial growth of a SiC epitaxial film on a SiC substrate
#329Optical quality diamond material
#330Method for producing epitaxial silicon carbide wafers
#331Method and apparatus for producing large, single-crystals of aluminum nitride
#332Single-crystal diamond, method of producing same, tool including single-crystal diamond, and component including single-crystal diamond
#333Epitaxial structure with air voids in shape of trapezoid
#334Substrate for crystal growth having a plurality of group III nitride seed crystals arranged in a disc shape
#335Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
#336Single crystal diamond, method for manufacturing single crystal diamond, and tool containing single crystal diamond
#337Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
#338SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD
#339Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor wafer
#340Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
#341Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
#342Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same
#343Process for producing group III nitride crystal and apparatus for producing group III nitride crystal
#344Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal
#345Silicon carbide single-crystal substrate, silicon carbide epitaxial substrate and method of manufacturing them
#346METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
#347PRODUCTION METHOD OF EPITAXIAL SILICON WAFER, VAPOR DEPOSITION EQUIPMENT AND VALVE
#348Single crystal diamond
#349Silicon carbide epitaxial wafer and process for producing same
#350Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
#351Epitaxial-silicon-wafer manufacturing method and epitaxial silicon wafer
#352Diamond substrate and method for manufacturing diamond substrate
#353Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate
#354Diamond components for quantum imaging, sensing and information processing devices
#355Diamond single crystal and production method thereof, and single crystal diamond tool
#356Diamond crystal, diamond devices, magnetic sensor, magnetic sensor system, and method for manufacturing sensor array
#357Epitaxial wafer and method for manufacturing same
#358GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
#359Crystalline gallium nitride containing flourine
#360Apparatus for producing SiC epitaxial wafer and method for producing SiC epitaxial wafer
#361Silicon carbide semiconductor substrate used to form semiconductor epitaxial layer thereon
#362Single-crystal 4H-SiC substrate
#363Method for manufacturing a single-crystal 4H—SiC substrate
#364N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device
#365Method for producing epitaxial silicon carbide wafer
#366Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#367Planar nonpolar group-III nitride films grown on miscut substrates
#368Method of producing a synthetic diamond
#369Silicon wafers by epitaxial deposition
#370Electronic device grade single crystal diamonds and method of producing the same
#371Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same
#372Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
#373Nitride semiconductor crystal, manufacturing method and manufacturing equipment
#374Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor
#375Method for pretreatment of base substrate and method for manufacturing layered body using pretreated base substrate
#376Silicon carbide epitaxial wafer, method for manufacturing silicon carbide epitaxial wafer, device for manufacturing silicon carbide epitaxial wafer, and silicon carbide semiconductor element
#377Substrate holder, plasma reactor and method for depositing diamond
#378Silicon epitaxial wafer and method of producing silicon epitaxial wafer
#379Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device
#380Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
#381Method of growing group III nitride crystals
#382Production of free-standing crystalline material layers
#383Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
#384METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER, AND HEXAGONAL SINGLE CRYSTAL ELEMENT
#385METHOD FOR MANUFACTURING SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER, AND SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER
#386Method for manufacturing SiC epitaxial wafer
#387FILM-FORMING DEVICE
#388Group III nitride bulk crystals and their fabrication method
#389GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD
#390Group III nitride bulk crystals and their fabrication method
#391MULTI-CRYSTAL DIAMOND BODY
#392Method for manufacturing silicon carbide semiconductor substrate
#393Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal
#394Plasma etching of diamond surfaces
#395Epitaxial wafer and method for fabricating the same
#396Highly transparent aluminum nitride single crystalline layers and devices made therefrom
#397BORON DOPED SINGLE CRYSTAL DIAMOND ELECTROCHEMICAL SYNTHESIS ELECTRODE
#398Silicon carbide semiconductor substrate and method for manufacturing same
#399Semiconductor structure, semiconductor device, and method for producing semiconductor structure
#400Silicon carbide semiconductor device manufacturing method
#401Method of producing epitaxial silicon wafer and epitaxial silicon wafer
#402Method of forming Ga2O3-based crystal film and crystal multilayer structure
#403Single crystal diamond and diamond tool
#404Diamond single crystal, method for producing the same, and single crystal diamond tool
#405SiC epitaxial wafer and method for manufacturing the same
#406Method for forming an epitactic silicon layer
#407Composite substrate with a protective layer for preventing metal from diffusing
#408Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
#409Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
#410Fabrication method of silicon carbide semiconductor element
#411Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
#412Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide
#413Apparatus for growing diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein
#414Composite of III-nitride crystal on laterally stacked substrates
#415Silicon carbide powder and method for manufacturing the same
#416Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
#417Single crystal CVD synthetic diamond material
#418Single-crystal 4H-SiC substrate
#419Crystal laminate structure and method for producing same
#420Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
#421Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
#422SIC epitaxial wafer and method for manufacturing same
#423Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
#424METHOD AND APPARATUS FOR FABRICATING FREE-STANDING GROUP III NITRIDE CRYSTALS
#425Method of growing group III nitride crystals
#426Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device
#427APPARATUS FOR THE DEPOSITION OF DIAMONDS BY MICROWAVE PLASMA CHEMICAL VAPOUR DEPOSITION PROCESS AND SUBSTRATE STAGE USED THEREIN
#428Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
#429METHODS FOR THE EPITAXIAL GROWTH OF SILICON CARBIDE
#430METHOD OF MANUFACTURING FREE-STANDING GALLIUM NITRIDE SUBSTRATE
#431Silicon wafers by epitaxial deposition
#432Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate
#433Group-III nitride crystal composite
#434METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP-III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING DEVICE
#435Electronic field effect devices and methods for their manufacture
#436GROUP III NITRIDE TEMPLATES AND RELATED HETEROSTRUCTURES, DEVICES, AND METHODS FOR MAKING THEM
#437Method for manufacturing silicon epitaxial wafer
#438Planar nonpolar group-III nitride films grown on miscut substrates
#439METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER
#440Silicon carbide epitaxial wafer and manufacturing method therefor
#441NITRIDE SEMICONDUCTOR CRYSTAL AND PRODUCTION PROCESS THEREOF
#442Epitaxial silicon wafer and method for manufacturing same
#443Method for producing epitaxial wafer
#444Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same
#445Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate
#446Diamond material
#447METHOD FOR GROWING CRYSTALS OF NITRIDE SEMICONDUCTOR, AND PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICE
#448Method of making a gallium nitride crystalline composition having a low dislocation density
#449Epitaxial silicon carbide monocrystalline substrate and method of production of same
#450GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE
#451Semiconductor layer
#452Nitride semiconductor substrate, production method therefor and nitride semiconductor device
#453Epitaxial silicon wafer and fabrication method thereof
#454Substrate composed of silicon carbide with thin film, semiconductor device, and method of manufacturing a semiconductor device
#455Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device
#456CRYSTAL GROWTH PROCESS FOR NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#457FILM OF N TYPE (100) ORIENTED SINGLE CRYSTAL DIAMOND SEMICONDUCTOR DOPED WITH PHOSPHOROUS ATOMS, AND A METHOD OF PRODUCING THE SAME
#458Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate
#459Synthetic CVD diamond
#460Single crystal diamond material
#461GROUP III NITRIDE TEMPLATES AND RELATED HETEROSTRUCTURES, DEVICES, AND METHODS FOR MAKING THEM
#462GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof
#463Silicon wafer
#464METHOD OF PRODUCING EPITAXIAL WAFER AS WELL AS EPITAXIAL WAFER
#465Reduction of basal plane dislocations in epitaxial SiC
#466Silicon epitaxial wafer and method for production thereof
#467GaN CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#468Silicon epitaxial wafer and manufacturing method thereof
#469Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate
#470Method for producing single crystalline diamonds
#471Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate
#472Silicon film formation apparatus and method for using same
#473SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device
#474Method of manufacturing silicon carbide single crystal
#475Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device
#476Method of growing III-nitride crystal
#477Stable power devices on low-angle off-cut silicon carbide crystals
#478NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#479SiC epitaxial substrate and method for producing the same
#480Optical quality diamond material
#481SINGLE CRYSTALLINE DIAMOND AND PRODUCING METHOD THEREOF
#482Method for manufacturing group III nitride single crystals
#483Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same
#484Branched nanowire and method for fabrication of the same
#485Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same
#486DIAMOND ELECTRONIC DEVICES INCLUDING A SURFACE AND METHODS FOR THEIR MANUFACTURE
#487Electronic field effect devices
#488HEXAGONAL WURTZITE SINGLE CRYSTAL AND HEXAGONAL WURTZITE SINGLE CRYSTAL SUBSTRATE
#489Plasma etching of diamond surfaces
#490DIAMOND ELECTRONIC DEVICES AND METHODS FOR THEIR MANUFACTURE
#491Process for Producing a Silicon Carbide Substrate for Microelectric Applications
#492High uniformity boron doped diamond material
#493Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
#494METHOD FOR MANUFACTURING EPITAXIAL WAFER
#495HIGH QUALITY LARGE AREA BULK NON-POLAR OR SEMIPOLAR GALLIUM BASED SUBSTRATES AND METHODS
#496METHOD AND REACTOR FOR GROWING CRYSTALS
#497Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device
#498Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same
#499Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystal
#500Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate
#501SILICON WAFER
#502METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
#503Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal
#504Homoepitaxial growth of SiC on low off-axis SiC wafers
#505Method for manufacturing gallium nitride crystal and gallium nitride wafer
#506Diamond single crystal substrate manufacturing method
#507Single crystal diamond
#508Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers
#509Planar nonpolar m-plane group III nitride films grown on miscut substrates
#510Growth method of GaN crystal, and GaN crystal substrate
#511Method for manufacturing epitaxial wafer
#512Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
#513Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
#514Group III nitride semiconductor substrate
#515Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same
#516System and method for producing synthetic diamond
#517Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes
#518Diamond transistor and method of manufacture thereof
#519Single crystal diamond
#520Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
#521Epitaxial wafer and method of producing same
#522Epitaxial silicon wafer and fabrication method thereof
#523Thick single crystal diamond layer method for making it and gemstones produced from the layer
#524Silicon Epitaxial Wafer And Manufacturing Method Thereof
#525Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same
#526SYSTEM AND METHOD FOR PRODUCING SYNTHETIC DIAMOND
#527Silicon Epitaxial Wafer and Manufacturing Method Thereof
#528GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device
#529Method for growing epitaxial crystal
#530Method of incorporating a mark in CVD diamond
#531Thick single crystal diamond layer method for making it and gemstones produced from the layer
#532Method and apparatus for producing large, single-crystals of aluminum nitride
#533Grown diamond mosaic separation
#534Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer
#535Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
#536Semiconductor layer with a GaOsystem
#537Semiconductor device and method of manufacturing the same by using atomic layer deposition
#538Method of producing single crystal
#539Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal
#540Single crystalline diamond and producing method thereof
#541Diamond substrate and manufacturing method thereof
#542Strained gettering layers for semiconductor processes
#543Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
#544Homoepitaxial growth of SiC on low off-axis SiC wafers
#545Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device
#546Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it
#547Seed crystal of silicon carbide single crystal and method for producing ingot using same
#548Diamond single crystal substrate manufacturing method and diamond single crystal substrate
#549Diamond single crystal composite substrate and method for manufacturing the same
#550Single crystal diamond tool
#551Method of growing single crystal diamond in a plasma reactor
#552Arc jet microwave plasma method of growing single crystal diamond
#553Single crystal synthetic diamond
#554Method of growing a single crystal diamond
#555Boron doped single crystal diamond electrochemical synthesis electrode
#556Method of growing boron doped single crystal diamond in a plasma reactor
#557Method of manufacturing gallium nitride-based single crystal substrate
#558Method of growing a single crystal diamond
#559Method of forming an N-type doped single crystal diamond
#560Method of creating a synthetic diamond
#561Synthetic diamond having alternating layers with different concentrations of impurities
#562Single crystal diamond tool
#563Single crystal diamond having C, C, and phosphorous
#564Nitride semiconductor device and manufacturing method thereof
#565Epitaxial wafer and method for manufacturing method
#566Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers
#567Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regions