121297 ⎘
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth; Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
Sub-classes:SELECTIVE DEPOSITION OF DIAMOND
#2FLAT EPITAXIAL WAFER HAVING MINIMAL THICKNESS VARIATION
#3METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#4GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SAME
#5GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SAME
#6EPITAXIAL WAFER, AND METHOD FOR PRODUCING SAME
#7METHOD FOR FORMING AN EPITAXIAL STRUCTURE ONTO A SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS
#8SiC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER, AND SiC DEVICE
#9FABRICATION OF LARGE AND POLYMER-FREE COMPLEX OXIDE AND COMPLEX NITRIDE MEMBRANES ASSISTED BY ISOLATED METAL ISLANDS
#10SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING A BUFFER LAYER AND MANUFACTURING METHOD
#11Semiconductor Exfoliation Method
#12VERTICAL GALLIUM NITRIDE CONTAINING FIELD EFFECT TRANSISTOR WITH SILICON NITRIDE PASSIVATION AND GATE DIELECTRIC REGIONS
#13SiC EPITAXIAL WAFER AND SiC DEVICE
#14CHAMBER FOR PROCESSING SUBSTRATES AT HIGH TEMPERATURES
#15METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#16SiC SUBSTRATE AND SiC COMPOSITE SUBSTRATE
#17SIC SINGLE CRYSTAL, SIC SUBSTRATE AND SIC EPITAXIAL WAFER
#18SEMICONDUCTOR CRYSTAL MANUFACTURING APPARATUS
#19METHOD FOR PRODUCING A SEMICONDUCTOR BODY, SEMICONDUCTOR BODY AND POWER SEMICONDUCTOR DEVICE
#20METHOD FOR MANUFACTURING SEMICONDUCTOR EPITAXIAL LAYER
#21SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
#22SILICON CARBIDE EPITAXIAL WAFER, AND PREPARATION METHOD THEREFOR AND USE THEREOF
#23Semiconductor Exfoliation Method
#24METHOD AND SYSTEM FOR MANUFACTURING A GERMANIUM-BASED MEMBRANE, AND GERMANIUM-BASED SUBSTRATE
#25THERMAL SUBSTRATE
#26GaN SUBSTRATE
#27GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP III ELEMENT NITRIDE SUBSTRATE
#28SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#29n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD
#30SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#31SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR THE PRODUCTION THEREOF
#32EPITAXIAL GROWTH APPARATUS FOR SILICON CARBIDE SEMICONDUCTOR
#33GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME
#34GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME
#35CVD SINGLE CRYSTAL DIAMOND
#36REACTOR CASING ASSEMBLY
#37SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
#38DIAMOND COMPOSITE BODY, SUBSTRATE, DIAMOND, TOOL INCLUDING DIAMOND, AND METHOD FOR MANUFACTURING DIAMOND
#39SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#40SILICON CARBIDE SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#41GaN CRYSTAL AND METHOD FOR PRODUCING GaN CRYSTAL
#42SILICON WAFER AND EPITAXIAL SILICON WAFER
#43EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME
#44ATOMIC SCALE FABRICATION OF DIAMOND QUANTUM COMPUTERS
#45ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION PARAMETERS
#46SiC EPITAXIAL WAFER
#47SiC EPITAXIAL WAFER
#48SiC EPITAXIAL WAFER
#49SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#50CRYSTALLINE WAFERS AND PROCESS FOR FORMING CRYSTALLINE WAFERS
#51METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS
#52METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITIONS FOR PRODUCING SUBSTRATES FOR EPITAXY
#53PREPARATION METHOD FOR COMPOSITE SUBSTRATE
#54SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD FOR PREPARING THE SAME
#55Silicon Carbide Epitaxy
#56METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTURE CREATED BY MEANS OF SAID METHOD
#57METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPITAXIAL SUBSTRATE
#58MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIABLE DOPANT CONCENTRATION
#59GALLIUM OXIDE FILM, AND MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR SAME
#60PROCESS FOR GROWING ACTIVE LAYERS IN SEQUENCE
#61METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
#62CVD SINGLE CRYSTAL DIAMOND
#63METHOD OF GROWING BULK SINGLE CRYSTAL DIAMOND ON A SUBSTRATE IN A PRESCRIBED GAS ENVIRONMENT AT A PRESCRIBED TEMPERATURE AND PRESSURE
#64SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER
#65METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON
#66Method for stripping gallium nitride substrate
#67SELECTIVE DEPOSITION OF DIAMOND
#68SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE
#69SILICON CARBIDE EPITAXIAL SUBSTRATE
#70METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
#71n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD
#72CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED GAAS BY HYDRIDE VAPOR PHASE EPITAXY
#73METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FILM OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE OF POLYCRYSTALLINE SIC
#74SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERMEDIATE
#75Method of Growing Personalized Single Crystal Diamond
#76SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME
#77METHOD OF FORMING AN EPITAXIAL LAYER
#78LARGE-SIZE DIAMOND, MPCVD DEVICE AND PREPARATION METHOD OF LARGE-SIZE DIAMOND
#79Method of optimizing the EMI shielding and infrared transparency of GaAs IR windows
#80METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING CHEMICAL POTENTIAL UNDER NON-EQUILIBRIUM CONDITION
#81POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD
#82METHOD OF PRODUCING EPITAXIAL LAYER WAFERS IN A CHAMBER OF A DEPOSITION REACTOR
#83SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME
#84METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL INGOT
#85SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
#86METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OPTOELECTRONIC DEVICE MANUFACTURED USING SAME
#87Single crystal synthetic diamond material
#88Technique for Forming Cubic Silicon Carbide and Heterojunction Silicon Carbide Device
#89SILICON CARBIDE EPITAXIAL SUBSTRATE
#90METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER
#91Semiconductor Exfoliation Method
#92EPITAXIAL WAFER CLEANING METHOD
#93GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
#94GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL
#95FABRICATING APPARATUS OF SIC EPITAXIAL WAFER AND FABRICATION METHOD OF THE SIC EPITAXIAL WAFER
#96FLAT EPITAXIAL WAFER HAVING MINIMAL THICKNESS VARIATION
#97EPITAXIAL SILICON WAFER, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
#98SILICON CARBIDE EPITAXIAL SUBSTRATE
#99SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
#100Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline SiC
#101Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#102SiC EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
#103DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
#104SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR THE PRODUCTION THEREOF
#105GAN CRYSTAL AND GAN SUBSTRATE
#106Silicon carbide wafer and method for manufacturing the same
#107VAPOR DEPOSITION DEVICE AND METHOD OF PRODUCING EPITAXIAL WAFER
#108Method of manufacturing a beta-GaO-based single crystal film by flowing a Ga chloride gas, an oxygen gas, and a dopant gas
#109METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR WAFER
#110Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC
#111FILM DEPOSITION METHOD AND METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM
#112MOLECULAR BEAM EPITAXY (MBE) REACTORS AND METHODS FOR n+GaN REGROWTH
#113SILICON WAFER AND EPITAXIAL SILICON WAFER
#114METHOD FOR PRODUCING A LAYER OF ALUMINIUM NITRIDE (ALN) ON A STRUCTURE OF SILICON OR III-V MATERIALS
#115Group-III-nitride structures and manufacturing methods thereof
#116SEMICONDUCTOR DEVICE
#117Manufacturing method for semiconductor silicon wafer
#118SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#119FILM FORMATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#120SiC epitaxial wafer, and method of manufacturing the same
#121Manufacturing method for semiconductor silicon wafer
#122METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE, AND GROUP III NITRIDE SUBSTRATE
#123METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER OF MONOCRYSTALLINE SIC ON AN SIC CARRIER SUBSTRATE
#124Silicon carbide wafer and semiconductor device
#125Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxy
#126Methods for determining suitability of silicon substrates for epitaxy
#127METHOD FOR PRODUCING CHEMICAL VAPOUR DEPOSITION DIAMOND
#128Group III nitride single crystal substrate and method for production thereof
#129Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer
#130Silicon carbide epitaxial substrate and method for manufacturing same
#131Method for producing a SiC substrate via an etching step, growth step, and peeling step
#132SiC SUBSTRATE, SiC EPITAXIAL SUBSTRATE, SiC INGOT AND PRODUCTION METHODS THEREOF
#133QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENCAPSULATING LAYER
#134Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate
#135SiC epitaxial wafer, production method therefor, and defect identification method
#136Apparatus and method for manufacturing hexagonal silicon crystal
#137Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
#138Method for manufacturing etched SiC substrate and grown SiC substrate by material tranportation and method for epitaxial growth by material transportation
#139Epitaxial structure
#140Epitaxial structure
#141Epitaxial structure
#142HYBRID GROWTH METHOD FOR III-NITRIDE TUNNEL JUNCTION DEVICES
#143SIC EPITAXIAL WAFER, MANUFACTURING APPARATUS OF A SIC EPITAXIAL WAFER, FABRICATION METHOD OF A SIC EPITAXIAL WAFER, AND SEMICONDUCTOR DEVICE
#144EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LAYERS
#145Single crystal composite synthetic diamond material
#146Single crystal synthetic diamond material
#147Gallium nitride-based sintered compact and method for manufacturing same
#148Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
#149LARGE AREA SINGLE CRYSTAL DIAMOND
#150Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing bulk GaN crystal
#151Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate
#152WAFER TRANSPORT DEVICE, VAPOR DEPOSITION DEVICE, WAFER TRANSPORT METHOD, AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER
#153Vapor deposition device and method for manufacturing epitaxial silicon wafer
#154GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
#155GaN substrate wafer and method for manufacturing same
#156Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#157Method of manufacturing silicon carbide epitaxial wafer
#158GaN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING GaN SUBSTRATE WAFER
#159SiC semiconductor substrate, method for manufacturing same, and device for manufacturing same
#160METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND LAMINATE STRUCTURE
#161Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#162Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#163METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE
#164Diamond composite body, substrate, diamond, tool including diamond, and method for manufacturing diamond
#165Method of growing bulk single crystal diamond on a substrate in a prescribed gas environment at a prescribed temperature and pressure
#166Method for manufacturing silicon carbide base body, method for manufacturing semiconductor device, silicon carbide base body, and semiconductor device
#167Methods for forming large area single crystal diamond substrates with high crystallographic alignment
#168Method for producing GaN crystal
#169Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#170N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method
#171Diamond substrate and method for manufacturing the same
#172OPTICAL QUALITY DIAMOND MATERIAL
#173SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
#174Silicon carbide single crystal
#175Epitaxially coated semiconductor wafer of monocrystalline silicon and method for production thereof
#176Modular reactor for microwave plasma-assisted deposition
#177Stack comprising single-crystal diamond substrate
#178Diamond crystal substrate, method for producing diamond crystal substrate, and method for homo-epitaxially growing diamond crystal
#179Method for manufacturing silicon carbide substrate, method for manufacturing silicon carbide epitaxial substrate, and method for manufacturing silicon carbide semiconductor device
#180Aluminum nitride single crystals having large crystal augmentation parameters
#181SUSCEPTOR, METHOD FOR PRODUCING EPITAXIAL SUBSTRATE, AND EPITAXIAL SUBSTRATE
#182Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate
#183METHOD OF MEASURING FILM THICKNESS, METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE AND NITRIDE SEMICONDUCTOR LAMINATE
#184Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device
#185Silicon carbide epitaxial wafer
#186Synthetic diamond material
#187Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
#188Epitaxial silicon carbide single crystal wafer and process for producing the same
#189Group III nitride single crystal substrate
#190Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device
#191EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LAYERS
#192Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#193Gallium nitride crystal substrate
#194Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device, and method of manufacturing semiconductor device
#195Semiconductor substrate, and epitaxial wafer and method for producing same
#196Crystal laminate, semiconductor device and method for manufacturing the same
#197Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
#198Nitride semiconductor laminate, semiconductor device, method of manufacturing nitride semiconductor laminate, method of manufacturing nitride semiconductor free-standing substrate and method of manufacturing semiconductor device
#199Silicon carbide semiconductor substrate
#200Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device
#201METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WATER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
#202SiC epitaxial wafer and method for manufacturing same
#203LARGE SINGLE CRYSTAL DIAMOND AND A METHOD OF PRODUCING THE SAME
#204Method of manufacturing diamond, diamond, diamond composite substrate, diamond joined substrate, and tool
#205Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer
#206Evaluation method of silicon epitaxial wafer
#207SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor device
#208Semiconductor wafer, semiconductor device, and method for producing semiconductor device
#209SINGLE CRYSTAL SILICON PRODUCTION METHOD, EPITAXIAL SILICON WAFER PRODUCTION METHOD, SINGLE CRYSTAL SILICON, AND EPITAXIAL SILICON WAFER
#210METHOD FOR PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
#211Axisymmetric material deposition from plasma assisted by angled gas flow
#212Crystal laminate structure
#213Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment method
#214MANUFACTURING METHOD AND INSPECTION METHOD OF GROUP-III NITRIDE LAMINATE, AND GROUP-III NITRIDE LAMINATE
#215Synthesis of thick single crystal diamond material via chemical vapour deposition
#216Elimination of Basal Plane Dislocation and Pinning the Conversion Point Below the Epilayer Interface for SiC Power Device Applications
#217Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device
#218Epitaxial structure
#219Indium phosphide substrate, method of inspecting indium phosphide substrate, and method of producing indium phosphide substrate
#220Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate
#221FILM FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#222Method for manufacturing epitaxial silicon wafer and epitaxial silicon wafer
#223Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#224METHOD FOR PRODUCING HOMOEPITAXIAL DIAMOND LAYERS
#225Diamond materials comprising multiple CVD grown, small grain diamonds, in a single crystal diamond matrix
#226Diamond materials comprising multiple CVD grown, small grain diamonds, in a single crystal diamond matrix
#227Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#228Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more
#229Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus
#230SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor device
#231Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution
#232Silicon carbide epitaxial substrate and method for manufacturing a silicon carbide semiconductor device
#233Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#234Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device
#235Single-crystal diamond material, single-crystal diamond chip, and perforated tool
#236Synthetic CVD diamond
#237SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor
#238Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less
#239Diamond substrate
#240Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof
#241Nitride crystal substrate
#242Method for producing aluminum nitride single crystal substrate
#243Diamond substrate and freestanding diamond substrate
#244Hybrid growth method for III-nitride tunnel junction devices
#245Optical quality diamond material
#246Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#247Semiconductor substrate made of silicon carbide and method for manufacturing same
#248Single-crystal diamond, method for manufacturing single-crystal diamond, and chemical vapor deposition device used in same
#249Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#250Method for producing GaN crystal
#251Silicon wafers by epitaxial deposition
#252Method for producing semiconductor epitaxial wafer and method of producing solid-state imaging device
#253Method for producing SiC epitaxial wafer including forming epitaxial layer under different conditions
#254Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#255GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
#256Method for manufacturing SiC composite substrate, and method for manufacturing semiconductor substrate
#257Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device and method of manufacturing semiconductor device
#258Nitride semiconductor light-emitting element
#259Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device
#260Manufacturing method and evaluation method of silicon epitaxial wafer
#261Method of fabricating a plurality of single crystal CVD synthetic diamonds
#262Epitaxial growth method for silicon carbide
#263Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
#264High voltage withstand Ga2O3-based single crystal schottky barrier diode
#265Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
#266SILICON CARBIDE EPITAXIAL SUBSTRATE
#267Foundation substrate for producing diamond film and method for producing diamond substrate using same
#268Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor wafer
#269Epitaxial wafer and method for manufacturing same
#270Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate
#271Diamond die
#272PHOSPHORUS DOPED DIAMOND ELECTRODE WITH TUNABLE LOW WORK FUNCTION FOR EMITTER AND COLLECTOR APPLICATIONS
#273SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor device
#274Method of manufacturing silicon carbide epitaxial substrate
#275Electronic device using group III nitride semiconductor and its fabrication method
#276Electronic device using group III nitride semiconductor and its fabrication method
#277Electronic device using group III nitride semiconductor and its fabrication method
#278Electronic device using group III nitride semiconductor and its fabrication method
#279Method of evaluating manufacturing process of silicon material and manufacturing method of silicon material
#280Method for manufacturing group-III nitride substrate and group-III nitride substrate
#281Method for producing SiC single crystal
#282Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
#283Method for manufacturing nitride crystal substrate and nitride crystal laminate
#284Method for manufacturing epitaxial silicon wafer
#285Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device, and method of manufacturing semiconductor device
#286Crystal laminate structure
#287GALLIUM NITRIDE-BASED SINTERED COMPACT AND METHOD FOR MANUFACTURING SAME
#288Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
#289Epitaxially coated semiconductor wafer, and method for producing an epitaxially coated semiconductor wafer
#290Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
#291Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrate
#292Growth of epitaxial gallium nitride material using a thermally matched substrate
#293Alumina substrate
#294Method for manufacturing group-III nitride semiconductor crystal substrate
#295Silicon carbide single crystal substrate, silicon carbide semiconductor device, and method for manufacturing silicon carbide semiconductor device
#296Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device
#297SEMICONDUCTOR LAMINATE
#298Epitaxial silicon carbide single crystal wafer and process for producing the same
#299Indium phosphide substrate, method of inspecting indium phosphide substrate, and method of producing indium phosphide substrate
#300GaN substrate