ClassID:

121298

C30B25/205 - CPC Classification

Classification description:

Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth; Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material

Recent Application in this class:
#1
20250320630
2025-10-16

METHOD FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE

#2
20250109526
2025-04-03

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

#3
20240413210
2024-12-12

GAN EPITAXIAL SUBSTRATE

#4
20240413209
2024-12-12

GAN SUBSTRATE

#5
20240213022
2024-06-27

METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER

#6
20240060210
2024-02-22

Single crystal synthetic diamond material

#7
20240011191
2024-01-11

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer preliminary class

#8
20230374701
2023-11-23

Method for producing a substrate for the epitaxial growth of a layer of a galium-based III-N alloy

#9
20230272551
2023-08-31

Method of manufacture of single crystal synthetic diamond material

#10
20230038132
2023-02-09

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer

#11
20220359195
2022-11-10

METHODS FOR FORMING AN EPITAXIAL WAFER

#12
20220319844
2022-10-06

ANISOTROPIC EPITAXIAL GROWTH

#13
20220154368
2022-05-19

Single crystal composite synthetic diamond material

#14
20220154366
2022-05-19

Single crystal synthetic diamond material

#15
20210285127
2021-09-16

Method of producing a synthetic diamond

#16
20210285125
2021-09-16

Method of manufacture of single crystal synthetic diamond material

#17
20210115591
2021-04-22

OPTICAL QUALITY DIAMOND MATERIAL

#18
20210115590
2021-04-22

Single crystal synthetic diamond material via chemical vapour deposition

#19
20200190693
2020-06-18

Semi-insulating silicon carbide crystalline ingot having a resistivity larger than 10∧7 Ohm-cm and manufacturing method therefor

#20
20200013907
2020-01-09

Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device

#21
20190376206
2019-12-12

SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

#22
20190055669
2019-02-21

Optical quality diamond material

#23
20190031515
2019-01-31

Single-crystal diamond, method for manufacturing single-crystal diamond, and chemical vapor deposition device used in same

#24
20180252867
2018-09-06

Semi-finished product, method for the production thereof and component produced therewith

#25
20180223449
2018-08-09

Method of producing a synthetic diamond

#26
20180040472
2018-02-08

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures

#27
20180038012
2018-02-08

Growth of epitaxial gallium nitride material using a thermally matched substrate

#28
20180002831
2018-01-04

Growth method of graphene

#29
20170314159
2017-11-02

Single-crystal diamond material, and tool, radiation temperature monitor, and infrared optical component including said diamond material

#30
20170183794
2017-06-29

Optical quality diamond material

#31
20170040145
2017-02-09

Microwave plasma reactor for manufacturing synthetic diamond material

#32
20160348277
2016-12-01

Diamond components for quantum imaging, sensing and information processing devices

#33
20160230311
2016-08-11

Method of producing a synthetic diamond

#34
20130334666
2013-12-19

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures

#35
20130298823
2013-11-14

Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture

#36
20110037048
2011-02-17

Composition Comprising Rare-earth Dielectric

#37
20100116197
2010-05-13

Optical quality diamond material

#38
20090127566
2009-05-21

Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor device using the same

#39
20060060826
2006-03-23

Composition comprising rare-earth dielectric

#40
20060060131
2006-03-23

Method of forming a rare-earth dielectric layer