121329 ⎘
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape; Inorganic compounds or compositions Carbides
Method for producing SiC epitaxial wafer including forming epitaxial layer under different conditions
#602Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#603Silicon carbide substrate and method for manufacturing the same
#604Method for producing SiC single crystal, SiC single crystal, and SiC ingot
#605Method for manufacturing SiC composite substrate, and method for manufacturing semiconductor substrate
#606Structure of micropowder
#607Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device and method of manufacturing semiconductor device
#608SiC single crystal production method and production apparatus
#609Method for manufacturing semiconductor wafer
#610SiC wafer producing method
#611Method for preparing SiC single crystal
#612SiC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES
#613SIC SINGLE CRYSTAL INGOT
#614Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device
#615Silicon carbide substrate
#616P-TYPE 4H-SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING P-TYPE 4H-SIC SINGLE CRYSTAL
#617Epitaxial growth method for silicon carbide
#618Composite substrate, method for forming nanocarbon film, and nanocarbon film
#619SiC crucible, SiC sintered body, and method of producing SiC single crystal
#620Silicon carbide substrate
#621Silicon carbide substrate
#622SiC composite substrate and method for manufacturing same
#623Manufacturing method of SiC composite substrate
#624Method for manufacturing silicon carbide single crystal
#625Process, a structure, and a supercapacitor
#626Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
#627Silicon-based molten composition and manufacturing method of SiC single crystal using the same
#628Wafer producing method
#629Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrate
#630SILICON CARBIDE EPITAXIAL SUBSTRATE
#631Method for manufacturing silicon-carbide semiconductor element
#632Method for producing SiC epitaxial wafer and apparatus for producing SiC epitaxial wafer
#633METHOD OF PRODUCING SiC SINGLE CRYSTAL
#634Method of manufacturing silicon carbide epitaxial wafer
#635Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device
#636Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate
#637SiC wafer producing method
#638Method for producing epitaxial silicon carbide single crystal wafer
#639Epitaxial wafer and method for manufacturing same
#640Growing epitaxial 3C-SiC on single-crystal silicon
#641SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor device
#642Method of manufacturing silicon carbide epitaxial substrate
#643Stabilized, high-doped silicon carbide
#644SEED CRYSTAL HOLDER, CRYSTAL GROWING DEVICE, AND CRYSTAL GROWING METHOD
#645SiC wafer producting method
#646Titanium-group nano-whiskers and method of production
#647Film forming apparatus
#648Micropowder and method for manufacturing the same
#649SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production method
#650Silicon-based molten composition and manufacturing method of SiC single crystal using the same
#651Method for producing SiC single crystal
#652Method for producing SiC single crystal
#653Two-dimensional, ordered, double transition metals carbides having a nominal unit cell composition M′M″X+1
#654Method for producing silicon carbide single crystal in a solution process using a seed crystal having a bottom face with a circular shape and at least a partially removed section
#655Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
#656METHOD OF PRODUCING CARBIDE RAW MATERIAL
#657Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device, and method of manufacturing semiconductor device
#658Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot
#659High purity polymer derived 3C SiC, methods compositions and applications
#660Device for growing monocrystalline crystal
#661Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
#662Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
#663Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrate
#664Silicon carbide single crystal substrate, silicon carbide semiconductor device, and method for manufacturing silicon carbide semiconductor device
#665Chemical mechanical polishing conditioner and method for manufacturing same
#666SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
#667METHOD FOR PRODUCING CRYSTAL
#668Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device
#669SEMICONDUCTOR LAMINATE
#670Device and method for producing silicon carbide
#671Furnace for seeded sublimation of wide band gap crystals
#672METHOD FOR PRODUCING CRYSTAL
#673Epitaxial silicon carbide single crystal wafer and process for producing the same
#674Surface treatment method for SiC substrate
#675Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus
#676Method for producing silicon carbide single crystal and silicon carbide single crystal substrate
#677Method for producing crystal
#678Single crystal silicon-carbide substrate and polishing solution
#679Silicon carbide substrate, method for producing same, and method for manufacturing silicon carbide semiconductor device
#680Method for manufacturing silicon carbide single crystal
#681Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate
#682COMPOSITE SUBSTRATE MANUFACTURING METHOD AND COMPOSITE SUBSTRATE
#683Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof
#684SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
#685SiC single crystal and method for producing same
#686Etching method for SiC substrate and holding container
#687Wafer bow reduction
#688SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
#689METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#690Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus
#691Silicon carbide substrate and method for manufacturing the same
#692APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCESS AND CRUCIBLE EMPLOYED THEREIN
#693METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL
#694Wafer producing method and processing feed direction detecting method
#695Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
#696Single-crystal silicon-carbide substrate and polishing solution
#697Substrate mounting member, wafer plate, and SiC epitaxial substrate manufacturing method
#698METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL
#699SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#700Method for producing crystal of silicon carbide, and crystal production device
#701Silicon carbide single crystal substrate and method for manufacturing the same
#702SiC epitaxial wafer and method for manufacturing the same
#703APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
#704Method for manufacturing SiC epitaxial wafer and SiC epitaxial wafer
#705Vapor deposition apparatus and techniques using high puritiy polymer derived silicon carbide
#706Semiconductor manufacturing method and SiC substrate
#707Method of producing a silicon carbide single-crystal substrate by epitaxial growth of a SiC epitaxial film on a SiC substrate
#708SiC single crystal production method and production apparatus
#709METHOD OF MANUFACTURING SILICON CARBIDE INGOT, SILICON CARBIDE SEED SUBSTRATE, SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#710SiC single crystal and method for producing same
#711Method for producing epitaxial silicon carbide wafers
#712Method of making photonic crystal
#713METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
#714Semiconductor device manufacturing method and semiconductor device
#715Reaction cell for growing SiC crystal with low dislocation density
#716Graphite crucible for sublimation growth of SiC crystal
#717Fabrication Method for Growing Single Crystal of Multi-Type Compound
#718Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
#719SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD
#720METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE
#721METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SEED CRYSTAL, AND SiC SUBSTRATE MANUFACTURING METHOD
#722SIC EPITAXIAL WAFER, MANUFACTURING APPARATUS OF A SIC EPITAXIAL WAFER, FABRICATION METHOD OF A SIC EPITAXIAL WAFER, AND SEMICONDUCTOR DEVICE
#723Silicon carbide single-crystal substrate, silicon carbide epitaxial substrate and method of manufacturing them
#724METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
#725Silicon carbide epitaxial wafer and process for producing same
#726SiC single crystal and method for producing same
#727Production method of SiC single crystal
#728SiC epitaxial wafer and method for producing same, and device for producing SiC epitaxial wafer
#729Production method of SiC crystal
#730Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate
#731METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
#732Silicon carbide substrate, semiconductor device, and methods for manufacturing them
#733Method for manufacturing silicon carbide single crystal
#734Method of producing crystal
#735Method for producing SiC single crystal
#736Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot
#737Epitaxial wafer and method for manufacturing same
#738Reaction chamber for epitaxial growth with a loading/unloading device and reactor
#739Apparatus for producing SiC epitaxial wafer and method for producing SiC epitaxial wafer
#740Method for manufacturing a silicon carbide wafer using a susceptor having draining openings
#741Silicon carbide semiconductor substrate used to form semiconductor epitaxial layer thereon
#742Single-crystal 4H-SiC substrate
#743Method for manufacturing a single-crystal 4H—SiC substrate
#744Water producing method
#745Silicon carbide crystal and method of manufacturing silicon carbide crystal
#746Wafer producing method
#747Wafer producing method
#748SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MANUFACTURING THE SAME
#749METHOD FOR PRODUCING SiC SINGLE CRYSTAL
#750Semiconductor substrate, semiconductor device and method of manufacturing semiconductor device
#751Method for producing epitaxial silicon carbide wafer
#752SiC single crystal and method for producing same
#753Silicon carbide ingot and method for manufacturing silicon carbide substrate
#754Silicon carbide semiconductor substrate and method for manufacturing same
#755Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer
#756Method for producing sic single crystal having low defects by solution process
#757Method of manufacturing silicon carbide substrate
#758Wafer producing method
#759Wafer producing method
#760Wafer producing method
#761Single-crystal silicon carbide substrate, method for producing single-crystal silicon carbide substrate, and method for inspecting single-crystal silicon carbide substrate
#762Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot
#763Method for producing SiC single crystal
#764METHOD FOR PRODUCING SiC EPITAXIAL WAFER
#765High purity SiOC and SiC, methods compositions and applications
#766N-type SiC single crystal and method for its production
#767Single crystal production apparatus
#768Method for producing SiC single crystal
#769Single crystal production apparatus
#770Self-formation of high-density arrays of nanostructures
#771Method for forming identification marks on refractory material single crystal substrate, and refractory material single crystal substrate
#772Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
#773Substrates for semiconductor devices
#774Silicon carbide epitaxial wafer, method for manufacturing silicon carbide epitaxial wafer, device for manufacturing silicon carbide epitaxial wafer, and silicon carbide semiconductor element
#775METHOD OF PRODUCING HIGH-PURITY CARBIDE MOLD
#776Laser processing method
#777Silicon carbide powder and method for producing silicon carbide single crystal
#778Method for producing SiC substrate
#779Wafer producing method
#780Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate
#781Silicon carbide semiconductor film-forming apparatus and film-forming method using the same
#782Method of manufacturing silicon carbide single crystal
#783SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
#784METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#785Device of manufacturing silicon carbide single crystal
#786Method of manufacturing silicon carbide single crystal
#787Method for producing SiC single crystal
#788Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus
#789Method for treating the surface of a silicon-carbide substrate including a removal step in which a modified layer produced by polishing is removed by heating under Si vapor pressure
#790Method for manufacturing silicon-carbide semiconductor element
#791Silicon carbide substrate and method of manufacturing the same
#792Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizing Resistive Heating
#793METHOD FOR PRODUCING SIC SINGLE CRYSTAL
#794Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device
#795SHIELD MEMBER AND APPARATUS FOR GROWING SINGLE CRYSTAL EQUIPPED WITH THE SAME
#796Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate
#797SiC single crystal and method for producing same
#798Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
#799SiC FLUORESCENT MATERIAL AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING ELEMENT
#800METHOD FOR PRODUCING SiC SINGLE CRYSTAL
#801Method for producing single crystal
#802Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate
#803Method for producing single crystal
#804Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
#805Dislocation in SiC semiconductor substrate
#806Film forming apparatus, susceptor, and film forming method
#807Silicon carbide substrate, semiconductor device, and methods for manufacturing them
#808Production of free-standing crystalline material layers
#809CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL
#810Silicon carbide semiconductor device manufacturing method and silicon carbide semiconductor device
#811METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER, AND HEXAGONAL SINGLE CRYSTAL ELEMENT
#812Silicon carbide single crystal and method for producing silicon carbide single crystal
#813METHOD FOR MANUFACTURING SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER, AND SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER
#814DEVICE AND METHOD FOR PRODUCING MULTI SILICON CARBIDE CRYSTALS
#815Method for manufacturing SiC epitaxial wafer
#816FILM-FORMING DEVICE
#817Substrate, semiconductor device, and method of manufacturing the same
#818Silicon carbide-tantalum carbide composite and susceptor
#819Method for manufacturing SiC substrate
#820Method for manufacturing silicon carbide semiconductor substrate
#821SiC single crystal, SiC wafer, SiC substrate, and SiC device
#822Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution
#823SUSCEPTOR PROCESSING METHOD AND SUSCEPTOR PROCESSING PLATE
#824Method for producing an n-type SiC single crystal from a Si—C solution comprising a nitride
#825Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
#826Surface treatment method for single crystal SiC substrate, and single crystal SiC substrate
#827Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
#828Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal
#829Method of forming a laminate of epitaxially grown cubic silicon carbide layers, and method of forming a substrate-attached laminate of epitaxially grown cubic silicon carbide layers
#830Method for manufacturing silicon carbide semiconductor device
#831Silicon carbide single crystal substrate and process for producing same
#832Self-formation of high-density arrays of nanostructures
#833Method for producing nanocarbon film and nanocarbon film
#834Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acid
#835Epitaxial wafer and method for fabricating the same
#836Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus
#837Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot
#838SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE
#839Silicon carbide semiconductor substrate and method for manufacturing same
#840Method of manufacturing silicon carbide substrate
#841SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND METHOD OF PRODUCING SINGLE CRYSTAL
#842SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC SINGLE CRYSTALS
#843Method for producing SiC single crystal
#844Semiconductor structure, semiconductor device, and method for producing semiconductor structure
#845Silicon carbide semiconductor device manufacturing method
#846CRUCIBLE, CRYSTAL GROWING APPARATUS, AND CRYSTAL GROWING METHOD
#847Method of preparing silicon carbide powder comprising converting a liquid SiC precursor to a B-phase SiC particulate material
#848SiC single-crystal ingot, SiC single crystal, and production method for same
#849Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus
#850CRYSTAL PRODUCING APPARATUS, SiC SINGLE CRYSTAL PRODUCING METHOD, AND SiC SINGLE CRYSTAL
#851SiC single crystal ingot and production method therefor
#852SiC epitaxial wafer and method for manufacturing the same
#853Method for growing silicon carbide crystal
#854Method for growing silicon carbide crystal
#855Apparatus for producing SiC single crystal and method for producing SiC single crystal
#856Method for producing semiconductor thin films on foreign substrates
#857Method for producing SiC single crystal
#858Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
#859Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
#860SiC single crystal and production method thereof
#861Epitaxial growth method
#862Fabrication method of silicon carbide semiconductor element
#863Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device
#864Silicon carbide epitaxial wafer, and preparation method thereof
#865Epitaxial growth method
#866Film formation apparatus and film formation method
#867SiC single crystal substrate
#868EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF PRODUCTION OF SAME
#869METHOD FOR PRODUCING SiC SINGLE CRYSTAL
#870Bulk silicon carbide having low defect density
#871Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate
#872Apparatus for producing bulk silicon carbide
#873Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide
#874Method and apparatus for producing bulk silicon carbide using a silicon carbide seed
#875Method for producing bulk silicon carbide
#876HOLDER, CRYSTAL GROWING METHOD, AND CRYSTAL GROWING APPARATUS
#877Dislocation in SiC semiconductor substrate
#878Apparatus for impurity layered epitaxy
#879Seed crystal holder for growing a crystal by a solution method
#880Silicon carbide crystal growth in a CVD reactor using chlorinated chemistry
#881SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEVICE, AND METHOD FOR PRODUCING SINGLE CRYSTAL
#882Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate
#883Substrate, semiconductor device, and method of manufacturing the same
#884Substrate, semiconductor device, and method of manufacturing the same
#885Silicon carbide powder and method for manufacturing the same
#886Silicon carbide single crystal wafer and manufacturing method for same
#887SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR FABRICATING THE SAME
#888Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production
#889Raw Material for Growth of Ingot, Method for Fabricating Raw Material for Growth of Ingot and Method for Fabricating Ingot
#890Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
#891Silicon carbide powder, method for manufacturing the same and method for growing single crystal
#892Method for deposition of silicon carbide and silicon carbide epitaxial wafer
#893Semiconductor wafer manufacturing method, and semiconductor wafer
#894Nanometer standard prototype and method for manufacturing nanometer standard prototype
#895Method for producing crystal
#896Ingot, silicon carbide substrate, and method for producing ingot
#897Single-crystal 4H-SiC substrate
#898SiC single crystal, SiC wafer, and semiconductor device
#899Apparatus for fabricating ingot
#900INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT