121329 ⎘
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape; Inorganic compounds or compositions Carbides
Semiconductor device and method of manufacturing the same
#902SiC epitaxial wafer and semiconductor device
#903Self-formation of high-density arrays of nanostructures
#904Self-formation of high-density arrays of nanostructures
#905SiC single crystal manufacturing method using alternating states of supersaturation
#906Vanadium doped SiC single crystals and method thereof
#907Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
#908Deposition apparatus
#909Epitaxial wafer manufacturing device and manufacturing method
#910Monocrystalline SiC substrate with a non-homogeneous lattice plane course
#911Method to reduce dislocations in SiC crystal growth
#912SINGLE-CRYSTAL SILICON-CARBIDE SUBSTRATE AND POLISHING SOLUTION
#913Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
#914Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
#915Apparatus for fabricating silicon carbide single crystal ingot and method for fabricating ingot
#916Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
#917Epitaxial wafer manufacturing device and manufacturing method
#918Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
#919SIC epitaxial wafer and method for manufacturing same
#920SiC single crystal and method of producing same
#921Silicon carbide single crystal manufacturing apparatus
#922Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
#923Flat SiC semiconductor substrate
#924Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
#925Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus
#926Production apparatus and production method of SiC single crystal
#927UNSEEDED SILICON CARBIDE SINGLE CRYSTALS
#928SiC single crystal, production method therefor, SiC wafer and semiconductor device
#929Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same
#930SiC single crystal, SiC wafer, and semiconductor device
#931Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method
#932SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL
#933Laser processing method
#934Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
#935Semi-insulating silicon carbide monocrystal and method of growing the same
#936Method for synthesizing ultrahigh-purity silicon carbide
#937Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing
#938Process for growing silicon carbide single crystal and device for the same
#939Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal
#940Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
#941Manufacturing apparatus of SiC single crystal and method for manufacturing SiC single crystal
#942Large diameter, high quality SiC single crystals, method and apparatus
#943Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ
#944Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
#945Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
#946Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
#947Silicon carbide substrate, semiconductor device, and methods for manufacturing them
#948Base material for growing single crystal diamond and method for producing single crystal diamond substrate
#949Defect capping method for reduced defect density epitaxial articles
#950Silicon carbide substrate, semiconductor device and method for manufacturing silicon carbide substrate
#951Smoothing method for semiconductor material and wafers produced by same
#952Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere
#953Production process of epitaxial silicon carbide single crystal substrate
#954Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course
#955Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course
#956Method of manufacturing silicon carbide structure
#957Dislocations in SiC semiconductor substrate
#958Reaction chamber including a susceptor having draining openings for manufacturing a silicon carbide wafer
#959Method for controlled growth of silicon carbide and structures produced by same
#960METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
#961Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
#962Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate
#963SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEM
#964SiCAlNsubstrate, and epitaxial wafer
#965METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE
#966SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME
#967SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MANUFACTURING THE SAME
#968SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#969Silicon carbide substrate and method of manufacturing the same
#970METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL
#971METHODS FOR THE EPITAXIAL GROWTH OF SILICON CARBIDE
#972METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL
#973Epitaxial silicon carbide single crystal substrate and process for producing the same
#974METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL
#975Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method
#976Substrate, semiconductor device, and method of manufacturing the same
#977Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same
#978METHODS FOR MODIFYING CRYSTALLOGRAPHIC SYMMETRY ON THE SURFACE OF A SILICON WAFER
#979Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate
#980METHOD FOR FIXING SILICON CARBIDE SEED CRYSTAL AND METHOD FOR PRODUCING SINGLE CRYSTAL SILICON CARBIDE
#981METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
#982APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
#983Titanium-Group Nano-Whiskers and Method of Production
#984SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
#985Shield member and apparatus for growing single crystal equipped with the same
#986Single crystal silicon carbide substrate and method of manufacturing the same
#987Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot
#988METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL
#989Method of manufacturing silicon carbide substrate
#990Tantalum carbide-coated carbon material and manufacturing method for same
#991METHOD FOR PRODUCING GEMSTONES FROM SILICON CARBIDE
#992SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SILICON CARBIDE POWDER
#993SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE INGOT
#994SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS
#995SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
#996Method for manufacturing silicon carbide single crystal, and silicon carbide substrate
#997Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby
#998FILM-FORMING APPARATUS AND METHOD
#999SILICON CARBIDE SUBSTRATE
#1000Epitaxial wafer and semiconductor element
#1001SILICON CARBIDE SUBSTRATE
#1002SiC single crystal and production method thereof
#1003Semiconductor substrate and method for producing semiconductor substrate
#1004PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS
#1005Halosilane assisted PVT growth of SiC
#1006Substrate processing apparatus
#1007SiC single crystal wafer and process for production thereof
#1008Jig for semiconductor production and method for producing same
#1009Apparatus with two-chamber structure for growing silicon carbide crystals
#1010Silicon carbide crystal and method of manufacturing silicon carbide crystal
#1011Method and System for Manufacturing Silicon and Silicon Carbide
#1012SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SAME
#1013HALOGEN ASSISTED PHYSICAL VAPOR TRANSPORT METHOD FOR SILICON CARBIDE GROWTH
#1014SILICON CARBIDE SUBSTRATE
#1015Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device
#1016Apparatus and method for production of SiC single crystal
#1017SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#1018METHOD OF PRODUCING SILICON CARBIDE CRYSTAL, AND SILICON CARBIDE CRYSTAL
#1019Apparatus for manufacturing silicon carbide single crystal
#1020Apparatus for manufacturing a silicon carbide single crystal comprising a mounting portion and a purge gas introduction system
#1021Silicon carbide epitaxial wafer and manufacturing method therefor
#1022Process for producing graphene/SiC composite material and graphene/SiC composite material obtained thereby
#1023Manufacturing method of silicon carbide single crystal
#1024APPARATUS OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#1025Manufacturing method of silicon carbide single crystal
#1026Method of producing SiC single crystal
#1027Method of production of sic single crystal
#1028Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
#1029SILICON CARBIDE SUBSTRATE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
#1030EPITAXIAL GROWTH OF SILICON CARBIDE ON SAPPHIRE
#1031PRODUCTION METHOD OF SILICON CARBIDE CRYSTAL, SILICON CARBIDE CRYSTAL, AND PRODUCTION DEVICE OF SILICON CARBIDE CRYSTAL
#1032APPARATUS OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#1033Seed crystal axis for solution growth of single crystal
#1034SiC single crystal sublimation growth method and apparatus
#1035SILICON CARBIDE SUBSTRATE
#1036Lightly doped silicon carbide wafer and use thereof in high power devices
#1037SUPPORTING SUBSTRATE, BONDED SUBSTRATE, METHOD FOR MANUFACTURING SUPPORTING SUBSTRATE, AND METHOD FOR MANUFACTURING BONDED SUBSTRATE
#1038Manufacturing method of silicon carbide single crystal
#1039SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE
#1040METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE
#1041Substrate processing apparatus and method of manufacturing semiconductor device
#1042Directional solidification system and method
#1043FILM FORMING APPARATUS, WAFER HOLDER, AND FILM FORMING METHOD
#1044SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE
#1045SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
#1046Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects
#1047APPARATUS OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#1048SEMICONDUCTOR DEVICE
#1049INSULATED GATE BIPOLAR TRANSISTOR
#1050DIRECTED REAGENTS TO IMPROVE MATERIAL UNIFORMITY
#1051Eddy current thickness measurement apparatus
#1052METHOD FOR FABRICATING SiC SUBSTRATE
#1053Tantalum carbide-coated carbon material and production method thereof
#1054CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, AND CUBIC SILICON CARBIDE FILM-ATTACHED SUBSTRATE MANUFACTURING METHOD
#1055METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE
#1056Semiconductor substrate manufacturing apparatus
#1057Reaction chamber of an epitaxial reactor and reactor that uses said chamber
#1058Silicon carbide single crystal and manufacturing method of the same
#1059Base material with single-crystal silicon carbide film, method of producing single-crystal silicon carbide film, and method of producing base material with single-crystal silicon carbide film
#1060METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
#1061Method for manufacturing silicon carbide substrate
#1062Semiconductor device having a group-III nitride superlattice layer on a silicon substrate
#1063Method of manufacturing single crystal
#1064Method of producing SiC single crystal
#1065Chemical vapour deposition system and process
#1066Method for manufacturing silicon carbide semiconductor device
#1067Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method
#1068METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
#1069SiC Crystals Having Spatially Uniform Doping Impurities
#1070COMBINED SUBSTRATE AND METHOD FOR MANUFACTURING SAME
#1071Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution
#1072Production method of n-type SiC single crystal, n-type SiC single crystal obtained thereby and application of same
#1073Smoothing method for semiconductor material and wafers produced by same
#1074Method of producing high quality silicon carbide crystal in a seeded growth system
#1075METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
#1076Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor
#1077Epitaxial silicon carbide monocrystalline substrate and method of production of same
#1078METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
#1079METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
#1080METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
#1081METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
#1082Method for controlled growth of silicon carbide and structures produced by same
#1083FILM FORMING APPARATUS AND METHOD
#1084SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
#1085SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
#1086MANUFACTURING METHOD FOR CRYSTAL, CRYSTAL, AND SEMICONDUCTOR DEVICE
#1087Method and System for Manufacturing Silicon and Silicon Carbide
#1088METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#1089SiC substrate and method of manufacturing the same
#1090Substrate composed of silicon carbide with thin film, semiconductor device, and method of manufacturing a semiconductor device
#1091MANUFACTURING METHOD FOR CRYSTAL, MANUFACTURING APPARATUS FOR CRYSTAL, AND STACKED FILM
#1092CRUCIBLE, CRYSTAL PRODUCTION DEVICE, AND HOLDER
#1093DEFECT CAPPING FOR REDUCED DEFECT DENSITY EPITAXIAL ARTICLES
#1094APPARATUS AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
#1095Silicon carbide substrate and method of manufacturing silicon carbide substrate
#1096Single-crystal silicon carbide and single-crystal silicon carbide wafer
#1097METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
#1098Method of manufacturing a silicon carbide single crystal
#1099Method and apparatus for manufacturing a SiC single crystal film
#1100SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
#1101Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
#1102Method for manufacturing semiconductor substrate
#1103SILICON CARBIDE MONOCRYSTAL SUBSTRATE AND MANUFACTURING METHOD THEREFOR
#1104MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
#1105MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
#1106Process for producing graphene/SiC composite material and graphene/SiC composite material obtained thereby
#1107GRAPHENE OR GRAPHITE THIN FILM, MANUFACTURING METHOD THEREOF, THIN FILM STRUCTURE AND ELECTRONIC DEVICE
#1108FILM DEPOSITION APPARATUS AND METHOD
#1109SEED CRYSTAL FOR SILICON CARBIDE SINGLE CRYSTAL GROWTH, METHOD FOR PRODUCING THE SEED CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING THE SINGLE CRYSTAL
#1110SINGLE CRYSTAL MANUFACTURING DEVICE AND MANUFACTURING METHOD
#1111Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate
#1112COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME
#1113METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
#1114METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE
#1115BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE
#1116Semiconductor substrate with cobalt silicide buffer layer and its manufacturing method
#1117Method of reducing memory effects in semiconductor epitaxy
#1118Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
#1119HEAT TREATMENT APPARATUS
#1120Reduction of basal plane dislocations in epitaxial SiC
#1121Process for producing SiCAlNbase material, process for producing epitaxial wafer, SiCAlNbase material, and epitaxial wafer
#1122SUBSTRATES AND METHODS OF FABRICATING DOPED EPITAXIAL SILICON CARBIDE STRUCTURES WITH SEQUENTIAL EMPHASIS
#1123SUBSTRATES AND METHODS OF FABRICATING EPITAXIAL SILICON CARBIDE STRUCTURES WITH SEQUENTIAL EMPHASIS
#1124Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device
#1125Method of manufacturing a SiCAlNsubstrate, method of manufacturing an epitaxial wafer, SiCAlNsubstrate, and epitaxial wafer
#1126Process for producing SiCAlNbase material, process for producing epitaxial wafer, SiCAlNbase material, and epitaxial wafer
#1127Semiconductor device and method for fabricating the same
#1128One hundred millimeter single crystal silicon carbide wafer
#1129Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate
#1130Substrate processing apparatus with an insulator disposed in the reaction chamber
#1131Substrate processing apparatus , method of manufacturing semiconductor device, and method of manufacturing substrate
#1132Process for producing silicon carbide crystals having increased minority carrier lifetimes
#1133Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystal
#1134Manufacturing device for silicon carbide single crystal
#1135SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE MANUFACTURING METHOD
#1136SiC single-crystal substrate and method of producing SiC single-crystal substrate
#1137Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
#1138Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom
#1139Method for growing silicon carbide single crystal
#1140Method for growing silicon carbide single crystal
#1141HEAT TREATMENT APPARATUS AND METHOD OF HEAT TREATMENT
#1142Heat treatment apparatus
#1143Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same
#1144High temperature-resistant article, method for producing the same, and high temperature-resistant adhesive
#1145Method for growing silicon carbide single crystal
#1146SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device
#1147Method of manufacturing silicon carbide single crystal
#1148Fabrication of SiC substrates with low warp and bow
#1149THERMALLY INSULATED CONFIGURATION AND METHOD FOR PRODUCING A BULK SIC CRYSTAL
#1150Method for improving the quality of a SiC crystal
#1151Method for forming required pattern on semiconductor substrate by thermal reflow technique
#1152Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate
#1153Doped Gallium Nitride Annealing
#1154Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
#1155Axial gradient transport growth process and apparatus utilizing resistive heating
#1156Stable power devices on low-angle off-cut silicon carbide crystals
#1157Semiconductor device and method for fabricating the same
#1158SiC epitaxial substrate and method for producing the same
#1159METHOD OF FABRICATING SEMI-INSULATING GALLIUM NITRIDE USING AN ALUMINUM GALLIUM NITRIDE BLOCKING LAYER
#1160Film deposition apparatus and film deposition method
#1161WATER-BASED POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND POLISHING METHOD FOR THE SAME
#1162Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same
#1163Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same
#1164METHOD FOR PRODUCING SIC SINGLE CRYSTAL
#1165Low resistivity single crystal silicon carbide wafer
#1166METHOD FOR THE PREPARATION OF CERAMIC MATERIALS
#1167Microwave heating for semiconductor nanostructure fabrication
#1168Seed crystal fixing device
#1169Method for growing epitaxy
#1170Guided diameter SiC sublimation growth with multi-layer growth guide
#1171Reactor For Growing Crystals
#1172SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
#1173PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
#1174Process for Producing a Silicon Carbide Substrate for Microelectric Applications
#1175Tracking carbon to silicon ratio during silicon carbide growth
#1176System for forming SiC crystals having spatially uniform doping impurities
#1177Method of Manufacturing Substrates Having Improved Carrier Lifetimes
#1178Dense, shaped articles constructed of a refractory material and methods of preparing such articles
#1179METHOD AND REACTOR FOR GROWING CRYSTALS
#1180Silicon carbide single crystal wafer and producing method thereof
#1181Method for forming a group III nitride material on a silicon substrate
#1182Method for producing semi-insulating resistivity in high purity silicon carbide crystals
#1183Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same
#1184Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby
#1185Homoepitaxial growth of SiC on low off-axis SiC wafers
#1186Method of fabricating an epitaxially grown layer
#1187APPARATUS FOR MANUFACTURING SEMICONDUCTOR THIN FILM
#1188Apparatus for producing silicon carbide single crystal
#1189Method for preparing substrate having monocrystalline film
#1190METHOD AND APPARATUS FOR GROWTH OF HIGH PURITY 6H-SIC SINGLE CRYSTAL
#1191Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
#1192Apparatus for manufacturing single-crystal silicon carbide
#1193METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME
#1194Method for producing p-type SiC semiconductor single crystal
#1195Method for producing silicon carbide single crystal
#1196Method of manufacturing a silicon carbide single crystal
#1197Production of single-crystal semiconductor material using a nanostructure template
#1198Intra-cavity gettering of nitrogen in SiC crystal growth
#1199FORMATION AND APPLICATIONS OF HIGH-QUALITY EPITAXIAL FILMS
#1200Deformation moderation method