121329 ⎘
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape; Inorganic compounds or compositions Carbides
In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
#1202Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate
#1203Method of producing silicon carbide epitaxial layer
#1204Lightly doped silicon carbide wafer and use thereof in high power devices
#1205Method of producing epitaxial layers with low basal plane dislocation concentrations
#1206Device for manufacturing sic single crystal and method for the same
#1207Method for producing silicon carbide single crystal
#1208METHOD OF PRODUCTION OF SiC SINGLE CRYSTAL
#1209Halogen assisted physical vapor transport method for silicon carbide growth
#1210Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals
#1211Method for improving the quality of a SiC crystal
#1212Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate
#1213SiC crystal semiconductor device
#1214Production of bulk silicon carbide with hot-filament chemical vapor deposition
#1215Method for producing single crystal silicon carbide
#1216Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materials
#1217Method of producing large area SiC substrates
#1218METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
#1219Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
#1220Process for producing silicon carbide single crystal
#1221Silicon-carbide nanostructure and method for producing the silicon-carbide nanostructure
#1222Low micropipe 100 mm silicon carbide wafer
#1223Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same
#1224Silicon carbide single crystal wafer and method for manufacturing the same
#1225Solid solution wide bandgap semiconductor materials
#1226Low-Doped Semi-Insulating Sic Crystals and Method
#1227Carbide nanofibrils and method of making same
#1228Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
#1229Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
#1230Low 1C screw dislocation 3 inch silicon carbide wafer
#1231Device and method to producing single crystals by vapour deposition
#1232Bulk single crystal gallium nitride and method of making same
#1233Reduction of carbon inclusions in sublimation grown SiC single crystals
#1234Micropipe-free silicon carbide and related method of manufacture
#1235Silicon carbide single crystals with low boron content
#1236Micropipe-free silicon carbide and related method of manufacture
#1237Reduction of carrot defects in silicon carbide epitaxy
#1238Silicon carbide manufacturing device and method of manufacturing silicon carbide
#1239Surface reconstruction method for silicon carbide substrate
#1240Silicon Carbide Single Crystal and Method of Etching the Same
#1241Silicon carbide single crystal and single crystal wafer
#1242Susceptor
#1243Process for manufacturing wafer of silicon carbide single crystal
#1244SINTERED METAL COMPONENTS FOR CRYSTAL GROWTH REACTORS
#1245Crystal growth method and reactor design
#1246Method for improving the quality of an SiC crystal and an SiC semiconductor device
#1247Seed holder for crystal growth reactors
#1248Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same
#1249Solid solution wide bandgap semiconductor materials
#1250One hundred millimeter SiC crystal grown on off-axis seed
#12513C-SiC nanowhisker
#1252Apparatus and method for the production of bulk silicon carbide single crystals
#1253Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
#1254One hundred millimeter single crystal silicon carbide wafer
#1255Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface
#1256Method for forming a group III nitride material on a silicon substrate
#1257Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method
#1258Seed crystal fixing apparatus and a method for fixing the seed crystal
#1259Low micropipe 100 mm silicon carbide wafer
#1260Method for preparing silicon carbide single crystal
#1261Production of elemental films using a boron-containing reducing agent
#1262Phoshor and light-emitting diode
#1263Silicon carbide formation by alternating pulses
#1264Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
#1265Semiconductor processing
#1266Minimizing degradation of SiC bipolar semiconductor devices
#1267Unseeded silicon carbide single crystals
#1268Reduction of carrot defects in silicon carbide epitaxy
#1269Epitaxial semiconductor structures having reduced stacking fault nucleation sites
#1270Featuring forming methods to reduce stacking fault nucleation sites
#1271Method of forming a layer of silicon carbide on a silicon wafer
#1272Conformal lining layers for damascene metallization
#1273Method of forming epitaxial SiC using XPS characterization
#1274Growing method of SiC single crystal
#1275Directed reagents to improve material uniformity
#1276Method for epitaxial growth of silicon carbide
#1277Sublimation chamber for phase controlled sublimation
#1278Method of manufacturing SiC single crystal wafer
#1279Silicon carbide single crystal and method and apparatus for producing the same
#1280Methods of fabricating silicon carbide crystals
#1281Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer
#1282Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal
#1283Method of production of silicon carbide single crystal
#1284System for growing silicon carbide crystals
#1285Dense, shaped articles constructed of a refractory material and methods of preparing such articles
#1286Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
#1287Silicon carbide single crystal and production thereof
#1288Method and apparatus for the production of silicon carbide crystals
#1289Method of heat treatment and heat treatment apparatus
#1290Method of and system for forming SiC crystals having spatially uniform doping impurities
#1291Silicon carbide product, method for producing same, and method for cleaning silicon carbide product
#1292Three inch silicon carbide wafer with low warp, bow, and TTV
#1293Seeded single crystal silicon carbide growth and resulting crystals
#1294Method for manufacturing granular silicon crystal
#1295Method of forming semi-insulating silicon carbide single crystal
#1296Apparatus for manufacturing single crystal
#1297Method for fabricating GaN-based nitride layer
#1298Silicon carbide single crystal and method and apparatus for producing the same
#1299Lightly doped silicon carbide wafer and use thereof in high power devices
#1300Process for producing silicon carbide crystals having increased minority carrier lifetimes
#1301Method for the production of a composite sicoi-type substrate comprising an epitaxy stage
#1302Method of fabricating an epitaxially grown layer
#1303Process for producing high quality large size silicon carbide crystals
#1304Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
#1305One hundred millimeter single crystal silicon carbide wafer
#1306Reduction of subsurface damage in the production of bulk SiC crystals
#1307Large-diameter SiC wafer and manufacturing method thereof
#1308Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal
#1309In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
#1310Novel wide bandgap material and method of making
#1311Method for depositing nanolaminate thin films on sensitive surfaces
#1312Low basal plane dislocation bulk grown SiC wafers
#1313Low 1c screw dislocation 3 inch silicon carbide wafer
#1314Carbide nanofibrils and method of making same
#1315Method to stabilize carbon in SiGeClayers
#1316Manufacturing equipment of SiC single crystal and method for manufacturing SiC single crystal
#1317Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
#1318Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
#1319Bulk single crystal gallium nitride and method of making same
#1320Homoepitaxial growth of SiC on low off-axis SiC wafers
#1321Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
#1322Support for hybrid epitaxy and method of fabrication
#1323Formation of single-crystal silicon carbide
#1324Method and apparatus for the chemical vapor deposition of materials
#1325Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier
#1326Method for production of a layer of silicon carbide or a nitride of a group III element on a suitable substrate
#1327Method for manufacturing silicon carbide single crystal from dislocation control seed crystal
#1328Lithographic methods to reduce stacking fault nucleation sites
#1329Silicon carbide single crystal and method and apparatus for producing the same
#1330Protection of the SiC surface by a GaN layer
#1331Silicon carbide single crystal and a method for its production
#1332Method for preparing SiC crystal and SiC crystal
#1333Silicon carbide deposition for use as a low dielectric constant anti-reflective coating
#1334Method of fixing seed crystal and method of manufacturing single crystal using the same
#1335Seed crystal of silicon carbide single crystal and method for producing ingot using same
#1336Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
#1337Manufacturing device for buried insulating layer type single crystal silicon carbide substrate
#1338One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
#1339Method and apparatus for growing silicon carbide crystals
#1340Minimizing degradation of SiC bipolar semiconductor devices
#1341Minimizing degradation of SiC bipolar semiconductor devices
#1342Elongated nano-structures and related devices
#1343Method for depositing nanolaminate thin films on sensitive surfaces
#1344Silicon carbide-coated carbonaceous material and carbonaceous material to be coated with silicon carbide
#13453C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker
#1346Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
#1347High purity carbonaceous material and ceramic coated high purity carbonaceous material
#1348Production of elemental films using a boron-containing reducing agent
#1349Method of forming low-k films
#1350Production method of SiC monitor wafer
#1351Carbide nanofibrils and method of making same
#1352Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer
#1353Method and apparatus for manufacturing single crystal
#1354Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
#1355Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
#1356Method of modifying source chemicals in an ALD process
#1357Device and method for producing single crystals by vapor deposition
#1358Hybrid seed structure for crystal growth system
#1359Composition for preparing silicon carbide ingot and method for preparing silicon carbide ingot using the same
#1360Titanium-group nano-whiskers and method of production
#1361High quality silicon carbide crystals and method of making the same
#1362Semiconductor substrate production systems and related methods
#1363Formation of field-tunable silicon carbide defect qubits with optically transparent electrodes and silicon oxide surface passivation
#1364Methods of depositing an alpha-silicon-carbide-containing film at low temperature