Patents-Review.com
ClassID:

121357 ⎘

C30B31/02 - CPC Classification

Classification description:

Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state

Recent Application in this class:
#1
20220259767
2022-08-18

Carbon-doped silicon single crystal wafer and method for manufacturing the same

 #2
20190393375
2019-12-26

Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

 #3
20190039911
2019-02-07

Production of rounded salt particles

 #4
20190035909
2019-01-31

Method for manufacturing a power semiconductor device having a reduced oxygen concentration

 #5
20180175579
2018-06-21

METHOD AND SYSTEM FOR MUTLILINE MIR-IR LASER

 #6
20180080144
2018-03-22

Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate

 #7
20180048283
2018-02-15

LITHIUM TANTALATE SINGLE CRYSTAL SUBSTRATE, BONDED SUBSTRATE, MANUFACTURING METHOD OF THE BONDED SUBSTRATE, AND SURFACE ACOUSTIC WAVE DEVICE USING THE BONDED SUBSTRATE

 #8
20180019365
2018-01-18

Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

 #9
20170373245
2017-12-28

Method of manufacturing an oxide single crystal substrate for a surface acoustic wave device

 #10
20170341949
2017-11-30

Production of rounded salt particles

 #11
20170298534
2017-10-19

Thermal diffusion doping of diamond

 #12
20160233502
2016-08-11

Lithium ion Battery Cell With Single Crystal Li+- Intercalated Titanium Dioxide As An Anode Material

 #13
20160126318
2016-05-05

Silicon epitaxial wafer and method of producing silicon epitaxial wafer

 #14
20160097145
2016-04-07

Thermal diffusion doping of diamond

 #15
20150333470
2015-11-19

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material

 #16
20130337639
2013-12-19

Method for substrate pretreatment to achieve high-quality III-nitride epitaxy

 #17
20130337631
2013-12-19

Semiconductor structure and method

 #18
20130309475
2013-11-21

Large area deposition and doping of graphene, and products including the same

 #19
20120224599
2012-09-06

Mid-IR microchip laser: ZnS:Crlaser with saturable absorber material

 #20
20110030991
2011-02-10

Large area deposition and doping of graphene, and products including the same

 #21
20100246610
2010-09-30

Mid-IR laser instrument for analyzing a gaseous sample and method for using the same

 #22
20100022049
2010-01-28

Mid-IR Microchip Laser: ZnS:Cr2+ Laser with Saturable Absorber Material

 #23
20070064748
2007-03-22

Mid-IR instrument for analyzing a gaseous sample and method for using the same

 #24
20060094214
2006-05-04

Semiconductor doping process

 #25
20060057403
2006-03-16

Use of thin SOI to inhibit relaxation of SiGe layers

 #26
20050281301
2005-12-22

Mid-IR microchip laser: ZnS:Cr laser with saturable absorber material

 #27
20050048778
2005-03-03

Use of thin SOI to inhibit relaxation of SiGe layers