ClassID:

121356

C30B31/00 - CPC Classification

Classification description:

Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor

Sub-classes:
Recent Application in this class:
#1
20260049415
2026-02-19

PARTICLE MANUFACTURING METHOD AND PARTICLE MANUFACTURING DEVICE

#2
20210388526
2021-12-16

Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28< =x<=0.7 on beta Ga2O3(100) or (−201) substrates by chemical vapor deposition

#3
20200027740
2020-01-23

Selective cyclic dry etching process of dielectric materials using plasma modification

#4
20180175579
2018-06-21

METHOD AND SYSTEM FOR MUTLILINE MIR-IR LASER

#5
20160218185
2016-07-28

LIQUID DOPING MEDIA FOR THE LOCAL DOPING OF SILICON WAFERS

#6
20150333470
2015-11-19

Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material

#7
20150279678
2015-10-01

IIIA-VA group semiconductor single crystal substrate and method for preparing same

#8
20140216607
2014-08-07

Biocompatible copper-based single-crystal shape memory alloys

#9
20130064979
2013-03-14

Methods for manufacturing architectural constructs

#10
20120224599
2012-09-06

Mid-IR microchip laser: ZnS:Crlaser with saturable absorber material

#11
20120025153
2012-02-02

Silicon carbide single crystal and manufacturing method of the same

#12
20100246610
2010-09-30

Mid-IR laser instrument for analyzing a gaseous sample and method for using the same

#13
20100022049
2010-01-28

Mid-IR Microchip Laser: ZnS:Cr2+ Laser with Saturable Absorber Material

#14
20090187243
2009-07-23

Biocompatible copper-based single-crystal shape memory alloys

#15
20080165817
2008-07-10

Reverse oxidation post-growth process for tailored gain profile in solid-state devices

#16
20070064748
2007-03-22

Mid-IR instrument for analyzing a gaseous sample and method for using the same

#17
20060201414
2006-09-14

Low temperature load and bake

#18
20060130743
2006-06-22

Low temperature load and bake

#19
20050281301
2005-12-22

Mid-IR microchip laser: ZnS:Cr laser with saturable absorber material

#20
20050266606
2005-12-01

Method of producing an N-type diamond with high electrical conductivity