ClassID:

121373

C30B33/00 - CPC Classification

Classification description:

After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Sub-classes:
Recent Application in this class:
#1
20260117418
2026-04-30

SiC SINGLE CRYSTAL, SiC SUBSTRATE, EPITAXIAL WAFER, METHOD FOR MANUFACTURING SiC SUBSTRATE

#2
20260117414
2026-04-30

SINGLE-CRYSTAL TERNARY POSITIVE ELECTRODE MATERIAL AND PREPARATION METHOD AND APPLICATION THEREOF

#3
20260092400
2026-04-02

SiC CRYSTAL AND METHOD FOR MANUFACTURING SiC CRYSTAL

#4
20260085449
2026-03-26

CARBON-COATED NANOWIRE NETWORK ELECTRODES

#5
20260047355
2026-02-12

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

#6
20260009156
2026-01-08

HYDROGEN SENSOR MATERIAL

#7
20260002287
2026-01-01

PROCESS FOR DIVIDING SINGLE-CRYSTAL SUBSTRATES

#8
20260002286
2026-01-01

INDIUM PHOSPHIDE SINGLE-CRYSTAL SUBSTRATE AND MANUFACTURING METHOD FOR INDIUM PHOSPHIDE SINGLE-CRYSTAL

#9
20250389054
2025-12-25

Low Fracture Energy Acoustic Lift-Off

#10
20250347030
2025-11-13

METHOD FOR RECYCLING RARE-EARTH BARIUM COPPER OXIDE (REBCO) SEED CRYSTALS TO GROW SUPERCONDUCTING BULK

#11
20250329605
2025-10-23

THERMAL SUBSTRATE

#12
20250297405
2025-09-25

METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE

#13
20250285922
2025-09-11

METHOD FOR MANUFACTURING GROUP III NITRIDE POWER SEMICONDUCTOR DEVICE USING EPITAXIAL DIES

#14
20250285860
2025-09-11

METHOD FOR MANUFACTURING SEMICONDUCTOR TEMPLATE HAVING GROUP III METAL POLAR SURFACE

#15
20250285859
2025-09-11

METHOD FOR MANUFACTURING GROUP 3 NITRIDE SEMICONDUCTOR TEMPLATE

#16
20250277325
2025-09-04

CRYSTALLINE FILM OF OCTACALCIUM PHOSPHATE AND METHOD FOR PRODUCING THE SAME

#17
20250263865
2025-08-21

PROCESS FOR PRODUCING A CRYSTALLINE LAYER

#18
20250223724
2025-07-10

SILICON CARBIDE WAFER AND METHOD OF FORMING THE SAME

#19
20250215612
2025-07-03

SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

#20
20250215611
2025-07-03

SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

#21
20250215610
2025-07-03

SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE

#22
20250171926
2025-05-29

ULTRA-HIGH THERMAL-CONDUCTIVITY DIAMOND AND SYNTHETIC METHOD THEREFOR

#23
20250163609
2025-05-22

METHOD FOR PRODUCING HETEROEPITAXIAL FILM

#24
20250163606
2025-05-22

PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION METHOD FOR MULTILAYER FILM OF SINGLE CRYSTAL SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT

#25
20250162198
2025-05-22

CRYSTAL WAFERING SYSTEM AND METHOD

#26
20250146122
2025-05-08

Structure for Producing Diamond and Method for Manufacturing Same

#27
20250122644
2025-04-17

PREPARATION METHOD FOR COMPOSITE SUBSTRATE

#28
20250122641
2025-04-17

Modifying Stress on Substrates Supporting CVD Deposited Diamond

#29
20250105010
2025-03-27

LAYER TRANSFER USING PATTERNED MASKS AND RELATED SYSTEMS

#30
20250101630
2025-03-27

HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING SAME

#31
20250101576
2025-03-27

METHOD FOR DEPOSITING A STRAIN RELAXED GRADED BUFFER LAYER OF SILICON GERMANIUM ON A SURFACE OF A SUBSTRATE

#32
20250075372
2025-03-06

ORGANIC SOLID CRYSTAL ENCAPSULATION

#33
20250075371
2025-03-06

SiC SINGLE CRYSTAL BOULE, MANUFACTURING METHOD OF SiC SINGLE CRYSTAL BOULE, AND MANUFACTURING METHOD OF SiC SUBSTRATE

#34
20250043458
2025-02-06

CRYSTAL GROWTH METHOD, AND CRYSTAL GROWTH DEVICE

#35
20250033093
2025-01-30

DEVICES AND METHODS FOR CLEANING A FINISHED MONOCRYSTALLINE SQUARE ROD, AND GRINDERS

#36
20250033092
2025-01-30

SILICON BAR RINSING DEVICE

#37
20250022747
2025-01-16

PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTAL MATERIAL

#38
20250011971
2025-01-09

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE

#39
20250002354
2025-01-02

LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE

#40
20240426023
2024-12-26

GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING SAME

#41
20240392473
2024-11-28

METHOD OF MANUFACTURE OF A WATCH CRYSTAL

#42
20240384434
2024-11-21

Method for manufacturing a device comprising a diamond crystal

#43
20240368802
2024-11-07

PRODUCTION METHOD FOR SILICON MONOCRYSTAL AND PRODUCTION METHOD FOR SILICON WAFER

#44
20240300064
2024-09-12

Method of manufacturing gallium nitride single-crystal substrate and method of manufacturing single-crystal substrate of nitride of group 13 element in periodic table

#45
20240262008
2024-08-08

Processing Method and System for Reducing Warp of Nitrogen-Doped Wafer

#46
20240258195
2024-08-01

BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DIFFERENT TYPE, METHOD FOR PRODUCING SAME, AND MOSAIC DIAMOND WAFER FOR USE IN BONDED BODY WITH SEMICONDUCTOR OF DIFFERENT TYPE

#47
20240230553
2024-07-11

METHOD OF EVALUATING SILICON SINGLE-CRYSTAL INGOT, METHOD OF EVALUATING SILICON EPITAXIAL WAFER, METHOD OF MANUFACTURING SILICON EPITAXIAL WAFER, AND METHOD OF EVALUATING SILICON MIRROR POLISHED WAFER

#48
20240218557
2024-07-04

METHODS FOR PRODUCING OFF-ORIENTATION SINGLE CRYSTAL SILICON WAFERS

#49
20240191389
2024-06-13

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME

#50
20240093407
2024-03-21

SYSTEMS AND METHODS FOR DISASSEMBLING TWO-DIMENSIONAL VAN DER WAALS CRYSTALS INTO MACROSCOPIC MONOLAYERS AND REASSEMBLING INTO ARTIFICIAL LATTICES

#51
20240060210
2024-02-22

Single crystal synthetic diamond material

#52
20240003043
2024-01-04

COMPOSITE SUBSTRATE, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM OXIDE CRYSTAL FILM

#53
20230411143
2023-12-21

EPITAXIAL WAFER CLEANING METHOD

#54
20230374699
2023-11-23

Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal wafer

#55
20230349071
2023-11-02

Crystal Structure Orientation in Semiconductor Semi-Finished Products and Semiconductor Substrates for Fissure Reduction and Method of Setting Same

#56
20230317780
2023-10-05

Monocrystalline SIC Substrates Having an Asymmetrical Geometry and Method of Producing Same

#57
20230313413
2023-10-05

Method of cleaning a group III-nitride single crystal substrate comprising cleaning a nitrogen-polar face with a detergent including a fluoroorganic compound

#58
20230257649
2023-08-17

PHOSPHOR AND LIGHT SOURCE DEVICE

#59
20230227997
2023-07-20

METHOD FOR WASHING ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING ALUMINUM NITRIDE SINGLE CRYSTAL LAYERED BODY, AND METHOD FOR PRODUCING ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE

#60
20230127390
2023-04-27

POLISHING OF POLYCRYSTALLINE MATERIALS

#61
20230062310
2023-03-02

Large scale production of oxidized graphene

#62
20230005736
2023-01-05

METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE, AND EPITAXIAL SUBSTRATE

#63
20230005638
2023-01-05

LARGE SCALE PRODUCTION OF THINNED GRAPHITE, GRAPHENE, AND GRAPHITE-GRAPHENE COMPOSITES

#64
20220364267
2022-11-17

Group III nitride single crystal substrate and method for production thereof

#65
20220230920
2022-07-21

Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate

#66
20220220637
2022-07-14

Silicon carbide substrate

#67
20220194799
2022-06-23

Large scale production of oxidized graphene

#68
20220154368
2022-05-19

Single crystal composite synthetic diamond material

#69
20220154366
2022-05-19

Single crystal synthetic diamond material

#70
20220127719
2022-04-28

Structure for producing diamond and method for manufacturing same

#71
20220106706
2022-04-07

Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate

#72
20220090295
2022-03-24

Silicon carbide wafer and method of preparing the same

#73
20220074070
2022-03-10

KIT OF PARTS COMPRISING A SYNTHETIC DIAMOND

#74
20220066284
2022-03-03

Method for manufacturing of patterned SrBBOand PbBOcrystals

#75
20220033265
2022-02-03

Method for manufacturing two-dimensional material using top-down method

#76
20220025546
2022-01-27

SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same

#77
20210404091
2021-12-30

Ultra-hard carbon film from epitaxial two-layer graphene

#78
20210395919
2021-12-23

Manufacturing method of semi-insulating single-crystal silicon carbide powder

#79
20210388527
2021-12-16

Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer

#80
20210371742
2021-12-02

Method of fluorescent nanodiamonds production

#81
20210254241
2021-08-19

METHOD FOR RECYCLING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

#82
20210241934
2021-08-05

Crystal and substrate of conductive GaAs, and method for forming the same

#83
20210238766
2021-08-05

Ga2O3-based single crystal substrate

#84
20210222326
2021-07-22

Passivation of nanocrystals tailored to different facets, and its application to optoelectronic devices

#85
20210207287
2021-07-08

Laser writing for colour centres in crystals

#86
20210197314
2021-07-01

Method for reducing the thickness of solid-state layers provided with components

#87
20210189596
2021-06-24

SiC SINGLE CRYSTAL, METHOD OF MANUFACTURING SiC INGOT, AND METHOD OF MANUFACTURING SiC WAFER

#88
20210175377
2021-06-10

Monocrystalline germanium wafers, method for preparing the same, method for preparing ingots and use of monocrystalline wafers

#89
20210172087
2021-06-10

Systems and methods for disassembling two-dimensional van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices

#90
20210122975
2021-04-29

Phosphor and production method thereof phosphor-including member, and light emitting device or projector

#91
20210108334
2021-04-15

Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal wafer

#92
20210098259
2021-04-01

Method for manufacturing ingot block, method for manufacturing semiconductor wafer, and device for manufacturing ingot block

#93
20210050248
2021-02-18

Pseudo-substrate with improved efficiency of usage of single crystal material

#94
20210047750
2021-02-18

Seed crystal for single crystal 4H—SiC growth and method for processing the same

#95
20200407874
2020-12-31

METHOD FOR PURIFICATION OF SILICON

#96
20200388538
2020-12-10

Method for producing wafers with modification lines of defined orientation

#97
20200317578
2020-10-08

TRANSPARENT CERAMIC WITH COMPLEX GEOMETRY

#98
20200232118
2020-07-23

SUBSTRATE FOR SURFACE ACOUSTIC WAVE ELEMENT AND PRODUCTION PROCESS FOR THE SAME

#99
20200224326
2020-07-16

Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device

#100
20200221833
2020-07-16

Gemstone coatings and methods of making and using the same

#101
20200207626
2020-07-02

Large scale production of oxidized graphene

#102
20200203581
2020-06-25

SINGLE CRYSTAL PHOSPHOR, PHOSPHOR-CONTAINING MEMBER AND LIGHT-EMITTING DEVICE

#103
20200199778
2020-06-25

LARGE SINGLE CRYSTAL DIAMOND AND A METHOD OF PRODUCING THE SAME

#104
20200181800
2020-06-11

Method of manufacturing diamond, diamond, diamond composite substrate, diamond joined substrate, and tool

#105
20200161017
2020-05-21

Nanowires-based transparent conductors

#106
20200157705
2020-05-21

Stabilized, high-doped silicon carbide

#107
20200064269
2020-02-27

Facet region detecting method and detecting apparatus

#108
20200041247
2020-02-06

Indium phosphide substrate, method of inspecting indium phosphide substrate, and method of producing indium phosphide substrate

#109
20200040482
2020-02-06

Nitride crystal substrate and method for manufacturing the same

#110
20200032420
2020-01-30

Non-polar or semi-polar GaN wafer

#111
20200031674
2020-01-30

Large scale production of thinned graphite, graphene, and graphite-graphene composites

#112
20190345635
2019-11-14

Chamfered silicon carbide substrate and method of chamfering

#113
20190267251
2019-08-29

Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

#114
20190257002
2019-08-22

GaAs substrate and method for manufacturing the same

#115
20190249330
2019-08-15

Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device

#116
20190198330
2019-06-27

Passivation of nonlinear optical crystals

#117
20190169767
2019-06-06

Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate

#118
20190152019
2019-05-23

SiC ingot forming method

#119
20190071466
2019-03-07

Crystal of reduced glutathione and method for producing same

#120
20190056637
2019-02-21

In-Situ Passivation for Nonlinear Optical Crystals

#121
20190017192
2019-01-17

Shaped silicon ingot using layer transfer

#122
20180375978
2018-12-27

Film for applying compressive stress to ceramic materials

#123
20180355513
2018-12-13

Silicon carbide substrate and method for manufacturing the same

#124
20180327928
2018-11-15

METHOD FOR PURIFICATION OF SILICON

#125
20180264818
2018-09-20

Silicon substrate processing method and liquid ejection head manufacturing method

#126
20180261354
2018-09-13

Crystal and substrate of conductive GaAs, and method for forming the same

#127
20180252867
2018-09-06

Semi-finished product, method for the production thereof and component produced therewith

#128
20180245240
2018-08-30

METHOD FOR PRODUCING SEMICONDUCTOR EPITAXIAL WAFER AND SEMICONDUCTOR EPITAXIAL WAFER

#129
20180218916
2018-08-02

Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate

#130
20180218896
2018-08-02

SiC wafer producing method

#131
20180218802
2018-08-02

Nanowires-based transparent conductors

#132
20180216256
2018-08-02

Processes for preparing amine-functionalized cellulose nanocrystals and nitrogen doped carbon nanofibers

#133
20180212026
2018-07-26

SURFACE MODIFIED DIAMOND MATERIALS AND METHODS OF MANUFACTURING

#134
20180201509
2018-07-19

Large scale production of oxidized graphene

#135
20180187332
2018-07-05

Stabilized, high-doped silicon carbide

#136
20180182641
2018-06-28

Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

#137
20180179068
2018-06-28

Purifying diamond powder

#138
20180155852
2018-06-07

Method for the production of wafers of nitride of element 13, having a non-zero truncation angle

#139
20180148417
2018-05-31

Production method of enzalutamide crystal form

#140
20180142376
2018-05-24

NON-POLAR OR SEMI-POLAR GaN WAFER

#141
20180130872
2018-05-10

SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production method

#142
20180072947
2018-03-15

Solution-Phase Synthesis of Layered Transition Metal Dichalcogenide Nanoparticles

#143
20180033659
2018-02-01

GAS PURGE SYSTEM AND METHOD FOR OUTGASSING CONTROL

#144
20180006255
2018-01-04

Light detector

#145
20180006252
2018-01-04

Nano-scale transistor

#146
20180006231
2018-01-04

Nano-heterostructure

#147
20180006227
2018-01-04

Method for making nano-heterostructure

#148
20170363406
2017-12-21

Indium phosphide substrate, method of inspecting indium phosphide substrate, and method of producing indium phosphide substrate

#149
20170342298
2017-11-30

Single crystal silicon-carbide substrate and polishing solution

#150
20170323186
2017-11-09

Graphene-based micro-scale identification system

#151
20170283988
2017-10-05

Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same

#152
20170283987
2017-10-05

Single-crystal silicon-carbide substrate and polishing solution

#153
20170278754
2017-09-28

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND RAMO4 SUBSTRATE

#154
20170256391
2017-09-07

Silicon carbide single crystal substrate and method for manufacturing the same

#155
20170253991
2017-09-07

Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof

#156
20170239779
2017-08-24

RAMO4 substrate and manufacturing method thereof

#157
20170239773
2017-08-24

RAMO4 substrate and manufacturing method thereof

#158
20170239772
2017-08-24

RAMO4 SUBSTRATE AND MANUFACTURING METHOD THEREOF

#159
20170233889
2017-08-17

Method of manufacturing diamond, diamond, diamond composite substrate, diamond joined substrate, and tool

#160
20170225953
2017-08-10

Large scale production of oxidized graphene

#161
20170221697
2017-08-03

Method for manufacturing SiC epitaxial wafer and SiC epitaxial wafer

#162
20170198407
2017-07-13

METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH

#163
20170191183
2017-07-06

METHOD OF MANUFACTURING SILICON CARBIDE INGOT, SILICON CARBIDE SEED SUBSTRATE, SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

#164
20170179346
2017-06-22

SINGLE CRYSTAL PHOSPHOR, PHOSPHOR-CONTAINING MEMBER AND LIGHT-EMITTING DEVICE

#165
20170174524
2017-06-22

Method for producing a plate-like alumina power

#166
20170162522
2017-06-08

Stress relief in semiconductor wafers

#167
20170160335
2017-06-08

Method for evaluating defect region of semiconductor substrate

#168
20170151595
2017-06-01

Method for manufacturing single-crystalline metal ultrafine wire

#169
20170148635
2017-05-25

Method for improving quality of spalled material layers

#170
20170107640
2017-04-20

METHOD FOR FORMING MONOCRYSTALLINE SILICON INGOT AND WAFERS

#171
20170107638
2017-04-20

METHOD FOR FORMING MONOCRYSTALLINE SILICON INGOT AND WAFER

#172
20170107154
2017-04-20

Transparent ceramic with complex geometry

#173
20170096343
2017-04-06

Large scale production of thinned graphite, graphene, and graphite-graphene composites

#174
20170073840
2017-03-16

Process for producing group III nitride crystal and apparatus for producing group III nitride crystal

#175
20170073839
2017-03-16

Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal

#176
20170044687
2017-02-16

Synthesis, capping and dispersion of nanocrystals

#177
20170038482
2017-02-09

Scintillator, method of manufacturing the same, radiation imaging apparatus, and radiation imaging system

#178
20170037539
2017-02-09

Single crystal diamond

#179
20170029978
2017-02-02

Large area, low-defect gallium-containing nitride crystals, method of making, and method of use

#180
20170029977
2017-02-02

Method for producing semiconductor epitaxial wafer and semiconductor epitaxial wafer

#181
20170029974
2017-02-02

Method of producing large-scale layers of solid material

#182
20170025281
2017-01-26

Passivation of nonlinear optical crystals

#183
20170022603
2017-01-26

BORON-DOPED N-TYPE SILICON TARGET

#184
20170016140
2017-01-19

CRUCIBLE, FABRICATION METHOD OF THE CRUCIBLE, AND FABRICATION METHOD OF A CRYSTALLINE MATERIAL BY MEANS OF SUCH A CRUCIBLE

#185
20170009378
2017-01-12

Semiconductor substrate manufacturing method

#186
20170002479
2017-01-05

Method and device for slicing a shaped silicon ingot using layer transfer

#187
20160377554
2016-12-29

Quality evaluation method for silicon wafer, and silicon wafer and method of producing silicon wafer using the method

#188
20160340796
2016-11-24

Method for manufacturing silicon carbide single crystal

#189
20160340194
2016-11-24

Large scale production of oxidized graphene

#190
20160326669
2016-11-10

Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot

#191
20160315223
2016-10-27

Textured devices

#192
20160312894
2016-10-27

Single crystal grain structure seals and method of forming

#193
20160307800
2016-10-20

Method for manufacturing a silicon carbide wafer using a susceptor having draining openings

#194
20160305040
2016-10-20

Method of manufacturing a silicon wafer

#195
20160300910
2016-10-13

Silicon carbide semiconductor substrate used to form semiconductor epitaxial layer thereon

#196
20160293712
2016-10-06

Semiconductor wafer and manufacturing method

#197
20160252631
2016-09-01

Scintillation crystal including a co-doped rare earth silicate, a radiation detection apparatus including the scintillation crystal, and a process of forming the same

#198
20160236375
2016-08-18

Silicon carbide ingot and method for manufacturing silicon carbide substrate

#199
20160233080
2016-08-11

Silicon carbide semiconductor substrate and method for manufacturing same

#200
20160231256
2016-08-11

Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer

#201
20160229086
2016-08-11

Method of manufacturing silicon carbide substrate

#202
20160208416
2016-07-21

APPARATUS AND METHOD OF CLEAVING THIN LAYER FROM BULK MATERIAL

#203
20160169815
2016-06-16

Passivation of nonlinear optical crystals

#204
20160158881
2016-06-09

Wafer producing method

#205
20160122904
2016-05-05

Method of producing epitaxial wafer

#206
20160118257
2016-04-28

Method for treating the surface of a silicon-carbide substrate including a removal step in which a modified layer produced by polishing is removed by heating under Si vapor pressure

#207
20160115624
2016-04-28

Post-synthesis processing of diamond and related super-hard materials

#208
20160108546
2016-04-21

LARGE-AREA SINGLE-CRYSTAL MONOLAYER GRAPHENE FILM AND METHOD FOR PRODUCING THE SAME

#209
20160102418
2016-04-14

Method for producing single crystal, and method for producing silicon wafer

#210
20160060488
2016-03-03

Polishing of hard substrates with soft-core composite particles

#211
20160048039
2016-02-18

Crystal body, optical device having the same, and method of manufacturing crystal body

#212
20160040316
2016-02-11

Manufacturing method of double cladding crystal fiber

#213
20160035579
2016-02-04

Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate

#214
20160002500
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