121380 ⎘
After-treatment of single crystals or homogeneous polycrystalline material with defined structure; Etching in gas atmosphere or plasma
PULSE ETCHING FOR FINFET AND GAA SOURCE/DRAIN EPI FILM GROWTH CONTROL
#2PARTICLE MANUFACTURING METHOD AND PARTICLE MANUFACTURING DEVICE
#3HIGH GROWTH RATE SELECTIVE SI:P PROCESS
#4EPITAXIAL LAYERS IN SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME
#5SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
#6NICKEL SUBSTRATE, AND METHOD FOR PRODUCING DIAMOND SUBSTRATE USING THE SAME
#7SiC LAYER TRANSFER VIA REMOTE EPITAXY
#8METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#9SILICON CARBIDE EPITAXIAL WAFER, AND PREPARATION METHOD THEREFOR AND USE THEREOF
#10METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR TEMPLATE AND SEMICONDUCTOR TEMPLATE MANUFACTURED THEREBY
#11METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEEP TRENCH
#12GROUP III NITRIDE SEMICONDUCTOR AND PRODUCTION METHOD THEREFOR
#13METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
#14DIAMOND STRUCTURE AND METHOD OF FORMING A DIAMOND STRUCTURE
#15APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION
#16METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
#17SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD FOR PREPARING THE SAME
#18APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION
#19CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELECTIVE GROWTH ON HEXAGONAL SiC SUBSTRATES
#20SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#21GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR
#22Method for Producing a Bulk SiC Single Crystal with Improved Quality Using a SiC Seed Crystal with a Temporary Protective Oxide Layer, and SiC Seed Crystal with Protective Oxide Layer
#23METHOD FOR SCALABLE FABRICATION OF ULTRAFLAT POLYCRYSTALLINE DIAMOND MEMBRANES
#24SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER EPITAXIAL SILICON AT LOW SUBSTRATE TEMPERATURE
#25METHOD OF FORMING AN EPITAXIAL LAYER
#26CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER
#27Controlled surface chemistry for polytypic and microstructural selective growth on hexagonal SiC substrates
#28Semiconductor Photoelectrode and Method for Manufacturing Same
#29METHODS OF FORMING SUPERLATTICE STRUCTURES USING NANOPARTICLES
#30METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILICON SINGLE-CRYSTAL SUBSTRATE
#31Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer
#32A DIAMOND SCANNING ELEMENT, ESPECIALLY FOR IMAGING APPLICATION, AND A METHOD FOR ITS FABRICATION
#33Laser Activated Luminescence System
#34SUBSTRATE AND METHOD FOR ITS MANUFACTURING
#35Method and apparatus for low temperature selective epitaxy in a deep trench
#36SiC single crystal manufacturing method, SiC single crystal manufacturing device, and SiC single crystal wafer
#37Method for depositing boron containing silicon germanium layers
#38Epitaxial Layers In Source/Drain Contacts And Methods Of Forming The Same
#39MICRO AND NANO STRUCTURING OF A DIAMOND SUBSTRATE
#40METHOD FOR MANUFACTURING SIC SUBSTRATE
#41Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material
#42NON-CONTACT POLISHING OF A CRYSTALLINE LAYER OR SUBSTRATE BY ION BEAM ETCHING
#43METHOD AND DEVICE FOR MANUFACTURING SiC SUBSTRATE, AND METHOD FOR REDUCING MACRO-STEP BUNCHING OF SiC SUBSTRATE
#44Method for depositing boron containing silicon germanium layers
#45SiC WAFER MANUFACTURING METHOD
#46SiC wafer and manufacturing method for SiC wafer
#47A DIAMOND HAVING NANOSTRUCTURES ON ONE OF ITS SURFACE TO GENERATE STRUCTURAL COLORS AND A METHOD OF PRODUCING THEREOF
#48OPTICAL QUALITY DIAMOND MATERIAL
#49Single crystal synthetic diamond material via chemical vapour deposition
#50SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
#51Method of producing substrates including gallium nitride
#52Method for manufacturing a spiral spring
#53Body obtained by processing solid carbon-containing material and producing method thereof
#54Body obtained by processing solid carbon-containing material, producing method thereof, and producing apparatus thereof
#55SINGLE CRYSTALLINE DIAMOND DEFRACTIVE OPTICAL ELEMENTS AND METHOD OF FABRICATING THE SAME
#56Electrostatic chucking process
#57Single crystalline diamond part production method for stand alone single crystalline mechanical and optical component production
#58Porous wire-in-tube structures
#59Selective cyclic dry etching process of dielectric materials using plasma modification
#60Epitaxial layers in source/drain contacts and methods of forming the same
#61Device including semiconductor substrate containing gallium nitride and method for producing the same
#62Gas storage system
#63Method for manufacturing electronic component for heterojunction provided with buried barrier layer
#64Optical quality diamond material
#65Methods of planarizing SiC surfaces
#66Silicon carbide substrate
#67Substrate treating apparatus
#68LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION
#69Method for manufacturing silicon wafer
#70METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEEP TRENCH
#71Magnetic resonance spectrometer
#72Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis
#73Methods of etching films with reduced surface roughness
#74MECHANICALLY STRENGTHENED BOND BETWEEN THERMALLY STABLE POLYCRYSTALLINE HARD MATERIALS AND HARD COMPOSITES
#75Etching method and plasma processing apparatus
#76Method for manufacturing epitaxial silicon wafer
#77Manufacturing method of SiC substrate
#78Surface treatment method for SiC substrate
#79Silicon carbide substrate, method for producing same, and method for manufacturing silicon carbide semiconductor device
#80Device including semiconductor substrate containing gallium nitride and method for producing the same
#81Etching method for SiC substrate and holding container
#82Method of fabricating a diamond membrane
#83Methods for selective etching of a silicon material
#84Optical quality diamond material
#85LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION
#86NON-DESTRUCTIVE EPITAXIAL LIFT-OFF OF LARGE AREA III-V THIN-FILM GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND SUBSTRATE REUSE
#87Gas storage system
#88Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element
#89Silicon hairspring
#90Self-aligned tunable metamaterials
#91Methods of etching films with reduced surface roughness
#92Method for manufacturing SiC substrate
#93Surface treatment method for single crystal SiC substrate, and single crystal SiC substrate
#94Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus
#95Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element
#96Heater moving type substrate processing apparatus
#97Nanometer standard prototype and method for manufacturing nanometer standard prototype
#98Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element
#99Substrate for epitaxial growth
#100Low-temperature selective epitaxial growth of silicon for device integration
#101Method for texturing DLC coatings, and textured DLC coatings thus obtained
#102Method for cleaning the surface of a silicon substrate
#103Semiconductor substrate manufacturing apparatus
#104METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER
#105SiC substrate and method of manufacturing the same
#106METHOD FOR PRODUCING EPITAXIAL SILICON WAFER
#107Methods of selectively depositing an epitaxial layer
#108Compound semiconductor substrate, semiconductor device, and processes for producing them
#109Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition
#110Manufacturing apparatus and method for semiconductor device
#111III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate
#112ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE
#113METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER
#114Compound semiconductor substrate, semiconductor device, and processes for producing them
#115Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
#116Gas storage system
#117Optical quality diamond material
#118Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer
#119Separate injection of reactive species in selective formation of films
#120Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers
#121Process and apparatus for treating wafers
#122Method for Producing Diamond Having Acicular Projection Array Structure on Surface thereof, Diamond Material, Electrode and Electronic Device
#123Method of manufacturing group III nitride crystal
#124Separate injection of reactive species in selective formation of films
#125Manufacturing method of epitaxial silicon wafer and substrate cleaning apparatus
#126III-V compound semiconductor substrate manufacturing method
#127Method for epitaxial growth with selectivity
#128Method of manufacturing SiC single crystal wafer
#129Quartz Tuning-Fork Resonators and Production Method
#130Method of manufacturing optical crystal element of laser
#131In situ growth of oxide and silicon layers
#132Plasma processing method and apparatus