121176 ⎘
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
GaN CRYSTAL AND GaN WAFER
#2PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYSTAL GROWN THEREBY
#3Ultrapure mineralizer and improved methods for nitride crystal growth
#4GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL
#5OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
#6METAL-BASED THERMAL INSULATION STRUCTURES
#7APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USE
#8APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USE
#9STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE PROCESS ENVIRONMENTS AT HIGH PRESSURE AND HIGH TEMPERATURE
#10OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
#11GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATE
#12LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE
#13GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
#14GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING
#15Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#16Group III nitride substrate with oxygen gradient, method of making, and method of use
#17HEATER FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USE
#18Substrate-free 2D tellurene
#19Method for reducing lateral growth of GaN crystals in an ammonothermal crystal growing process
#20Ultrapure mineralizer and improved methods for nitride crystal growth
#21Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing bulk GaN crystal
#22METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
#23Low-dislocation bulk GaN crystal and method of fabricating same
#24Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#25Group III nitride substrate, method of making, and method of use
#26GaN single crystal and method for manufacturing GaN single crystal
#27High quality group-III metal nitride seed crystal and method of making
#28Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization
#29SUBSTRATE-FREE 2D TELLURENE
#30Method for growing GaN crystal and c-plane GaN substrate
#31Method and system for preparing polycrystalline group III metal nitride
#32Oxygen-doped group III metal nitride and method of manufacture
#33Method for producing nitride crystal and nitride crystal
#34Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
#35Non-polar or semi-polar GaN wafer
#36Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#37Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#38LOW-DISLOCATION BULK GAN CRYSTAL AND METHOD OF FABRICATING SAME
#39Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution
#40Boron nitride and method of producing boron nitride
#41Crystal of nitride of group-13 metal on periodic table, and method for producing the same
#42Method for growing GaN crystal and C-plane GaN substrate
#43Method and system for preparing polycrystalline group III metal nitride
#44GaN single crystal and method for manufacturing GaN single crystal
#45Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
#46SEED CRYSTAL FOR GROWTH OF GALLIUM NITRIDE BULK CRYSTAL IN SUPERCRITICAL AMMONIA AND FABRICATION METHOD
#47Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
#48METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NITRIDE
#49Substrate-free 2D tellurene
#50GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
#51Crystal of monovalent cation salt of 3-hydroxyisovaleric acid and process for producing the crystal
#52Apparatus for high pressure reaction
#53Composition and method for making picocrystalline artificial borane atoms
#54Oxygen-doped group III metal nitride and method of manufacture
#55Method for producing nitride single crystal using nitrogen-containing solvent, mineralizer having fluorine atom, and raw material
#56Electronic device using group III nitride semiconductor and its fabrication method
#57Electronic device using group III nitride semiconductor and its fabrication method
#58Electronic device using group III nitride semiconductor and its fabrication method
#59Electronic device using group III nitride semiconductor and its fabrication method
#60Method for manufacturing nanostructures for a field emission cathode
#61Crystal of nitride of group-13 metal on periodic table, and method for producing the same
#62Free-standing substrate, function element and method for producing same
#63GaN single crystal and method for manufacturing GaN single crystal
#64A METHOD FOR PRODUCING MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE, PREPARED WITH THIS METHOD
#65METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH
#66METHOD FOR PRODUCING GROUP III NITRIDE WAFERS AND GROUP III NITRIDE WAFERS
#67Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
#68Pressure release mechanism for capsule and method of use with supercritical fluids
#69Composition and method for making picocrystalline artificial borane atoms
#70Method for producing nitride crystal and nitride crystal
#71Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
#72Boron nitride and method of producing boron nitride
#73High pressure reactor and method of growing group III nitride crystals in supercritical ammonia
#74High pressure reactor and method of growing group III nitride crystals in supercritical ammonia
#75GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
#76Crystalline gallium nitride containing flourine
#77Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
#78Method and system for preparing polycrystalline group III metal nitride
#79Seed selection and growth methods for reduced-crack group III nitride bulk crystals
#80REACTOR VESSELS FOR AMMONOTHERMAL AND FLUX-BASED GROWTH OF GROUP-III NITRIDE CRYSTALS
#81Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammonia
#82Method of fabricating group III nitride with gradually degraded crystal structure
#83Method of fabricating bulk group III nitride crystals in supercritical ammonia
#84Bismuth-doped semi-insulating group III nitride wafer and its production method
#85METHOD FOR OBTAINING MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE OBTAINED BY THIS METHOD
#86Composite material and method of manufacturing composite material
#87Method for synthesis of high quality large area bulk gallium based crystals
#88Method of growing group III nitride crystals
#89METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH PRESSURE VESSEL
#90Production of free-standing crystalline material layers
#91High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
#92Crystal of nitride of group-13 metal on periodic table, and method for producing the same
#93METHOD FOR PRODUCING NITRIDE CRYSTAL
#94Group III nitride bulk crystals and their fabrication method
#95Group III nitride bulk crystals and their fabrication method
#96Group III nitride wafers and fabrication method and testing method
#97Group III nitride wafers and fabrication method and testing method
#98Method for growing a bulk single crystal nitride material
#99HIGH PRESSURE REACTOR FOR SUPERCRITICAL AMMONIA
#100Method for producing nitride crystal and nitride crystal
#101Group III nitride bulk crystals and fabrication method
#102Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
#103Process for large-scale ammonothermal manufacturing of gallium nitride boules
#104Apparatus for processing materials at high temperatures and pressures
#105Method for producing nitride single crystal
#106REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS
#107METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL AND AUTOCLAVE FOR USE IN THE METHOD
#108Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
#109Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
#110High quality group-III metal nitride crystals, methods of making, and methods of use
#111REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
#112Method of growing group III nitride crystals
#113Method of growing group III nitride crystals
#114Group III nitride wafer and its production method
#115Group III nitride wafer and its production method
#116Bismuth-doped semi-insulating group III nitride wafer and its production method
#117USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
#118Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
#119APPARATUS USED FOR THE GROWTH OF GROUP-III NITRIDE CRYSTALS UTILIZING CARBON FIBER CONTAINING MATERIALS AND GROUP-III NITRIDE GROWN THEREWITH
#120HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL
#121HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL
#122Method for producing nitride crystal and nitride crystal
#123USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO A GROUP-III NITRIDE CRYSTAL GROWN USING THE AMMONOTHERMAL METHOD
#124Group 13 nitride crystal and group 13 nitride crystal substrate
#125High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
#126Method for producing nitride crystal
#127Production method, production vessel and member for nitride crystal
#128Nitride crystal with removable surface layer and methods of manufacture
#129Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other
#130Method for producing semiconductor crystal, apparatus for crystal production and group 13 element nitride semiconductor crystal
#131High pressure apparatus with stackable rings
#132GROUP-III NITRIDE CRYSTAL AMMONOTHERMALLY GROWN USING AN INITIALLY OFF-ORIENTED NON-POLAR OR SEMI-POLAR GROWTH SURFACE OF A GROUP-III NITRIDE SEED CRYSTAL
#133Method of making a gallium nitride crystalline composition having a low dislocation density
#134GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED PURITY AND METHOD OF PRODUCING THE SAME
#135Process for producing nitride crystal, nitride crystal and apparatus for producing same
#136Ammonothermal method for growth of bulk gallium nitride
#137Method for synthesis of high quality large area bulk gallium based crystals
#138Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
#139Semi-insulating group III metal nitride and method of manufacture
#140Reactor designs for use in ammonothermal growth of group-III nitride crystals
#141ADDITION OF HYDROGEN AND/OR NITROGEN CONTAINING COMPOUNDS TO THE NITROGEN-CONTAINING SOLVENT USED DURING THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
#142CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL
#143NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
#144PLANT AND METHOD FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES
#145METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN A MIXTURE OF SUPERCRITICAL AMMONIA AND NITROGEN, AND GROUP III-NITRIDE CRYSTALS GROWN THEREBY
#146Nitride crystal with removable surface layer and methods of manufacture
#147Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
#148GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME
#149REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS
#150Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
#151High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
#152Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
#153Method for producing group III-nitride wafers and group III-nitride wafers
#154Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
#155Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby
#156Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
#157Transparent group III metal nitride and method of manufacture
#158Large area seed crystal for ammonothermal crystal growth and method of making
#159Ultrapure mineralizers and methods for nitride crystal growth