Patents-Review.com
ClassID:

121181 ⎘

C30B9/04 - CPC Classification

Classification description:

Single-crystal growth from melt solutions using molten solvents by cooling of the solution

Sub-classes:
Recent Application in this class:
#1
20260043168
2026-02-12

ENCLOSED CRYSTAL GROWTH

 #2
20230383432
2023-11-30

ENCLOSED CRYSTAL GROWTH

 #3
20230287596
2023-09-14

METHOD FOR PURIFYING A THALLIUM COMPOUND USING A CARBON POWDER

 #4
20220389613
2022-12-08

P-type SnSe crystal capable of being used as thermoelectric refrigeration material and preparation method thereof

 #5
20220315452
2022-10-06

Layered Double Hydroxide Crystal, Anion Adsorbent, and Method for Producing Layered Double Hydroxide Crystal

 #6
20220307155
2022-09-29

Method for making iron telluride

 #7
20220190228
2022-06-16

Method of improving thermoelectric performance of SnSe thermoelectric material

 #8
20220033993
2022-02-03

Method for purifying a thallium compound using a carbon powder

 #9
20200010973
2020-01-09

Silicon based fusion composition and manufacturing method of silicon carbide single crystal using the same

 #10
20190055668
2019-02-21

Black phosphorus crystal having high photoelectric response rate, two-dimensional black phosphorus PN junction, and preparation method and use thereof

 #11
20160185069
2016-06-30

High resistance panels (HRP)

 #12
20160002822
2016-01-07

Production of free-standing crystalline material layers

 #13
20140000509
2014-01-02

Semiconductor crystal removal apparatus and production method for semiconductor crystal

 #14
20130248764
2013-09-26

METHOD FOR INCREASING THE CONTENT OF CE3+ IN LASER MATERIALS

 #15
20120273713
2012-11-01

Method for preparing single-crystal cubic sesquioxides and uses thereof

 #16
20110215440
2011-09-08

Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device

 #17
20090298265
2009-12-03

Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device

 #18
20060288925
2006-12-28

Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element

 #19
14033107
2016-03-29

Ultrapure mineralizers and methods for nitride crystal growth