ClassID:

121182

C30B9/06 - CPC Classification

Classification description:

Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition

Recent Application in this class:
#1
20250376784
2025-12-11

METHOD FOR PREPARING COMPOUND CRYSTAL VIA MELT MIGRATION UNDER SUPERGRAVITY

#2
20240262687
2024-08-08

GA-based van der Waals room-temperature ferromagnetic crystal material, preparation and use thereof

#3
20230374695
2023-11-23

SYNTHESIS OF H-BN USING METALLIC SOLVENT AND HIGH-TEMPERATURE SOAKS

#4
20230108035
2023-04-06

PZN-BASED LARGE-SIZE TERNARY HIGH-PERFORMANCE SINGLE CRYSTAL, GROWING METHOD AND MOLTEN SALT FURNACE THEREOF

#5
20190301052
2019-10-03

Semimetal compound of Pt

#6
20190177873
2019-06-13

Method for making semimetal compound of Pt

#7
20190106806
2019-04-11

Silicon-based molten composition and method for manufacturing silicon carbide single crystal using the same

#8
20180312996
2018-11-01

SiC single crystal production method and production apparatus

#9
20180298519
2018-10-18

Method for preparing SiC single crystal

#10
20180245235
2018-08-30

Silicon-based molten composition and manufacturing method of SiC single crystal using the same

#11
20180202069
2018-07-19

Lead oxychloride, infrared nonlinear optical crystal, and preparation method thereof

#12
20180171506
2018-06-21

SEED CRYSTAL HOLDER, CRYSTAL GROWING DEVICE, AND CRYSTAL GROWING METHOD

#13
20180127891
2018-05-10

Silicon-based molten composition and manufacturing method of SiC single crystal using the same

#14
20180112329
2018-04-26

Method for producing SiC single crystal

#15
20180100247
2018-04-12

Method for producing silicon carbide single crystal in a solution process using a seed crystal having a bottom face with a circular shape and at least a partially removed section

#16
20180097142
2018-04-05

Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal

#17
20180087187
2018-03-29

Semimetal compound of Pt and method for making the same

#18
20180087178
2018-03-29

Method for making semimetal compound of Pt

#19
20180016707
2018-01-18

Semimetal compound of Pt and method for making the same

#20
20180016700
2018-01-18

Method for making a semimetal compound of Pt by reacting elements Pt and Te

#21
20170362737
2017-12-21

Method of producing apatite crystal, and apatite crystal

#22
20170260647
2017-09-14

Method for producing crystal of silicon carbide, and crystal production device

#23
20170260644
2017-09-14

System and method for producing group 13 nitride crystals comprised of growth vessels stacked within inner vessels placed over support tables with a central rotating shaft and revolving shafts attached to the support tables

#24
20170121843
2017-05-04

Single metal crystals

#25
20170081780
2017-03-23

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL AND METHOD FOR PRODUCING A GaN SUBSTRATE

#26
20170009373
2017-01-12

Production method of SiC single crystal

#27
20160355945
2016-12-08

Method for producing nitride crystal

#28
20160340795
2016-11-24

Method of producing crystal

#29
20160340794
2016-11-24

Method for producing SiC single crystal

#30
20160307800
2016-10-20

Method for manufacturing a silicon carbide wafer using a susceptor having draining openings

#31
20160273126
2016-09-22

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

#32
20160215412
2016-07-28

Method for producing SiC single crystal

#33
20160208410
2016-07-21

Single crystal production apparatus

#34
20160208409
2016-07-21

Method for producing SiC single crystal

#35
20160201215
2016-07-14

Method for producing gallium nitride crystal by reacting metal gallium and iron nitride

#36
20160137515
2016-05-19

Li4Sr(BO3)2 compound, Li4Sr(BO3)2 nonlinear optical crystal, preparation method and use thereof

#37
20160068993
2016-03-10

SiC single crystal and method for producing same

#38
20150259829
2015-09-17

Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acid

#39
20150252490
2015-09-10

Method of producing a monolithic crystal by top-seeded solution growth from a liquid crystal flux comprising a mixture of solid precursors

#40
20150221511
2015-08-06

Method for producing SiC single crystal

#41
20150191849
2015-07-09

SiC single-crystal ingot, SiC single crystal, and production method for same

#42
20150167196
2015-06-18

SiC single crystal ingot and production method therefor

#43
20150152569
2015-06-04

Apparatus for producing SiC single crystal and method for producing SiC single crystal

#44
20150136016
2015-05-21

Method for producing SiC single crystal

#45
20150020730
2015-01-22

Seed crystal holder for growing a crystal by a solution method

#46
20140134491
2014-05-15

LITHIUM CONTAINING COMPOSITE OXIDE POWDER AND MANUFACTURING PROCESS FOR THE SAME

#47
20140127466
2014-05-08

SiC single crystal and method of producing same

#48
20130157448
2013-06-20

Reaction chamber including a susceptor having draining openings for manufacturing a silicon carbide wafer

#49
20120188630
2012-07-26

Potassium chloroborate nonlinear optical crystal, preparation method and use thereof

#50
20120111265
2012-05-10

METHOD AND STRUCTURE FOR NONLINEAR OPTICS

#51
20110315073
2011-12-29

Method of producing SiC single crystal

#52
20110155047
2011-06-30

Method and structure for nonlinear optics

#53
20110155046
2011-06-30

Method for producing group III nitride semiconductor

#54
20100189624
2010-07-29

Group III nitride crystal and method of its growth

#55
20090256120
2009-10-15

Method and structure for nonlinear optics

#56
20090197398
2009-08-06

III nitride single crystal and method of manufacturing semiconductor device incorporating the III nitride single crystal

#57
20080223288
2008-09-18

Crystal growing apparatus

#58
20080194085
2008-08-14

Growth of textured gallium nitride thin films and nanowires on polycrystalline substrates

#59
20080169532
2008-07-17

III nitride single crystal manufacturing method

#60
20070209573
2007-09-13

Method for preparing silicon carbide single crystal

#61
18214981
2025-06-24

Method and system for liquid encapsulated growth of cadmium zinc telluride crystals

#62
16905646
2024-01-09

Method and system for liquid encapsulated growth of cadmium zinc telluride crystals