G11C11/411 - CPC Classification Index

ClassID:

199506 ⎘

G11C11/411 - CPC Classification

Classification description:

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only

Sub-classes:

G11C11/4113 » {with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors} 12
G11C11/4116 » {with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL} 4

Recent Application in this class:

20220013174

Dual compare ternary content addressable memory

20190259443

Semiconductor device

20180068708

Semiconductor device

20170236824

Complementary bipolar SRAM

20160343427

Complementary bipolar SRAM

20160329094

Methods of reading six-transistor cross-coupled thyristor-based SRAM memory cells

20160189762

Two transistor ternary random access memory

20160148940

Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication

20160093623

Two-transistor SRAM semiconductor structure and methods of fabrication

20160093622

Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication

20160064053

Semiconductor device and information processing device

20150092485

Two transistor ternary random access memory

20120314485

Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platform

20120275215

Semiconductor device

20110299327

Four-transistor and five-transistor BJT-CMOS asymmetric SRAM cells

14717218

Complementary bipolar SRAM