G11C11/4113 - CPC Classification Index

ClassID:

199507 ⎘

G11C11/4113 - CPC Classification

Classification description:

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Recent Application in this class:

20240212745

VARIABLE VOLTAGE BIT LINE PRECHARGE

20230098852

Variable voltage bit line precharge

20210241812

Memory system and semiconductor storage device configured to discharge word line during abrupt power interrupt

20210166750

Variable voltage bit line precharge

20200075085

Fixed-level charge sharing type LCV for memory compiler

20160329094

Methods of reading six-transistor cross-coupled thyristor-based SRAM memory cells

20160093607

Six-transistor SRAM semiconductor structures and methods of fabrication

20160093369

Write assist thyristor-based SRAM circuits and methods of operation

20160093368

Six-transistor thyristor SRAM circuits and methods of operation

20160093367

Cross-coupled thyristor SRAM circuits and methods of operation

20160093362

Two-transistor thyristor SRAM circuit and methods of operation

20160093358

Power reduction in thyristor random access memory