199647 ⎘
Erasable programmable read-only memories electrically programmable; Auxiliary circuits, e.g. for writing into memory; Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention; Arrangements for verifying correct programming or erasure Arrangements for verifying correct erasure or for detecting overerased cells
NAND flash memory and blank page search method therefor
#302Semiconductor integrated circuit
#303Non-volatile memory device and erase method of the same
#304Method and apparatus for initialization control in a non-volatile memory device
#305Nonvolatile semiconductor memory device with erase voltage measurement
#306Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array
#307Flash EEprom system
#308Memory block erasing in a flash memory device
#309NAND flash memory and blank page search method therefor
#310Erase verify for non-volatile memory using a bitline current-to-voltage converter
#311Erase verify for non-volatile memory using bitline/reference current-to-voltage converters
#312Erase verify for nonvolatile memory using reference current-to-voltage converters
#313Erase verify for nonvolatile memory using bitline/reference current-to-voltage converters
#314Erase verify for non-volatile memory using a reference current-to-voltage converter
#315Method for erase-verifying a non-volatile memory capable of identifying over-erased and under-erased memory cells
#316Erase verify for non-volatile memory
#317Nonvolatile semiconductor memory device
#318Non-volatile semiconductor memory device and multi-block erase method thereof
#319NAND flash memory with read and verification for threshold uniformity
#320Position based erase verification levels in a flash memory device
#321Method for erasing an NROM cell
#322Method for erasing an NROM cell
#323Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
#324Flash memory device with a variable erase pulse
#325Non-volatile semiconductor memory device
#326Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
#327Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
#328Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
#329Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array
#330Non-volatile semiconductor memory device
#331Memory block erasing in a flash memory device
#332Memory device and method using positive gate stress to recover overerased cell
#333Non-volatile semiconductor memory device allowing efficient programming operation and erasing operation in short period of time
#334Nonvolatile memory device including circuit formed of thin film transistors
#335Nonvolatile semiconductor memory device
#336Memory device and memory card
#337Method for erasing an NROM cell
#338Non-volatile semiconductor memory device and electric device with the same
#339Nonvolatile semiconductor memory device
#340Erase voltage compensation mechanism for group erase mode with bit line leakage detection method
#341Methods and devices for erasing non-volatile memory
#342Method of fast erasing low-current EEPROM array
#343Reducing read disturb effect on partially programmed blocks of non-volatile memory
#344Memory device, memory system and method of operating memory device
#345Method and system to improve soft-programming time in non-volatile memory
#346Prioritized memory scanning for data storage systems