199654 ⎘
Erasable programmable read-only memories electrically programmable; Auxiliary circuits, e.g. for writing into memory; Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention; Arrangements for verifying correct programming or erasure; Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasure
FLASH MEMORY APPARATUS AND ERASING METHOD THEREOF
#2ERASE OPERATIONS IN MEMORY DEVICES
#3MEMORY DEVICE AND CONTROL METHOD THEREOF
#4ERASE OPERATIONS IN MEMORY DEVICES
#5Assuring integrity and secure erasure of critical security parameters
#6Semiconductor memory apparatus
#7Memory device for column repair
#8Safety and correctness data reading and programming in a non-volatile memory device
#9Assuring integrity and secure erasure of critical security parameters
#10Apparatus and method of performing erase and erase verify operations
#11Memory device for column repair
#12NON-VOLATILE MEMORY AND OPERATION METHOD THEREOF
#13Safety and correctness data reading and programming in a non-volatile memory device
#14Adaptive erase voltage based on temperature
#15MEMORY DEVICE AND METHOD OF OPERATING THE SAME
#16SEMICONDUCTOR MEMORY DEVICE
#17Storage device and method for operating the same
#18Nonvolatile memory device
#19Erase suspend scheme in a storage device
#20Semiconductor memory device and memory state detecting method
#21Memory system and method of operating the same
#22Non-volatile memory device and operating method thereof
#23Memory device with compensation for erase speed variations due to blocking oxide layer thinning
#24Nonvolatile memory device and memory system including nonvolatile memory device that controls the erase speeds of cell strings
#25Non-volatile memory device, storage device, and programming method thereof for performing an erase detect operation
#26Memory device with compensation for erase speed variations due to blocking oxide layer thinning
#27Memory device and method of performing erase and erase verify operations
#28Controller, operating method thereof and memory system including the controller
#29Nonvolatile memory device and memory system including nonvolatile memory device that controls the erase speeds of cell strings
#30Semiconductor memory device and erase method including changing erase pulse magnitude for a memory array
#31Non-volatile memory device and operating method thereof for performing an erase detect operation
#32Nonvolatile memory with erase gate region
#33Non-volatile memory
#34Method for operating single-poly non-volatile memory cell
#35Non-volatile semiconductor memory and erasing method thereof
#36Non-volatile semiconductor memory device and erase method thereof
#37Data storage device and method of driving the same
#38Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current
#39Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits
#40Nonvolatile memory, verify method therefor, and semiconductor device using the nonvolatile memory
#41Nonvolatile memory, verify method therefor, and semiconductor device using the nonvolatile memory
#42Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
#43Counteracting overtunneling in nonvolatile memory cells
#44Erase method to reduce erase time and to prevent over-erase
#45Erase method for flash memory
#46Floating-gate nonvolatile semiconductor memory device
#47Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
#48Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
#49Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
#50Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
#51Erasing non-volatile memory utilizing changing word line conditions to compensate for slower erasing memory cells
#52Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells
#53Systems for erasing non-volatile memory utilizing changing word line conditions to compensate for slower erasing memory cells
#54Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells
#55Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
#56Control of voltages during erase and re-program operations of memory cells
#57Selective erase method for flash memory
#58Nonvolatile memory, verify method therefor, and semiconductor device using the nonvolatile memory
#59Current difference divider circuit
#60PMOS memory cell
#61Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
#62Erasing method used in flash memory
#63Method and system to improve soft-programming time in non-volatile memory