ClassID:

199668

G11C17/123 - CPC Classification

Classification description:

Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series

Recent Application in this class:
#1
20250266114
2025-08-21

METHODS AND APPARATUS TO DELETE AND PREVENT RECOVERY OF DATA STORED IN A MEMORY ARRAY

#2
20250266113
2025-08-21

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

#3
20250169142
2025-05-22

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES

#4
20240090210
2024-03-14

Semiconductor memory devices with different doping types

#5
20230402117
2023-12-14

Memory circuit and method of operating same

#6
20220359546
2022-11-10

Semiconductor memory devices with different doping types

#7
20220139491
2022-05-05

Electronic chip memory

#8
20210383883
2021-12-09

Memory circuit and method of operating same

#9
20200402574
2020-12-24

Multi-bit read-only memory device

#10
20200202972
2020-06-25

Electronic chip memory

#11
20200058328
2020-02-20

Memory circuit including a first program device

#12
20190348543
2019-11-14

Memory arrays

#13
20190013415
2019-01-10

Memory arrays

#14
20180047736
2018-02-15

OTP cell having a reduced layout area

#15
20170323895
2017-11-09

One-time programming cell

#16
20170278855
2017-09-28

One-time programming cell

#17
20170236596
2017-08-17

Semiconductor device

#18
20170025185
2017-01-26

Method to program bitcells of a ROM array

#19
20160322086
2016-11-03

Write voltage generation circuit and memory apparatus

#20
20150138869
2015-05-21

NON-VOLATILE MEMORY

#21
20150103579
2015-04-16

Memory device, writing method, and reading method

#22
20110090752
2011-04-21

Semiconductor memory device

#23
20090103381
2009-04-23

Asynchronous sense amplifier for read only memory

#24
20080239786
2008-10-02

Logic coding in an integrated circuit

#25
20080123405
2008-05-29

Implanted multi-bit NAND ROM

#26
20060013041
2006-01-19

Nonvolatile memory structure with high speed high bandwidth and low voltage

#27
20050226068
2005-10-13

Multi-layered memory cell structure

#28
20050117429
2005-06-02

Nonvolatile memory structure with high speed high bandwidth and low voltage

#29
20050035414
2005-02-17

Multi-bit ROM cell with bi-directional read and a method for making thereof