199669 ⎘
Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices Virtual ground arrays
ENCODED READ-ONLY MEMORY AND DECODER
#2ENCODED READ-ONLY MEMORY AND DECODER
#3MULTI-WRITE READ-ONLY MEMORY ARRAY AND READ-ONLY MEMORY THEREOF
#4Masking Techniques for Memory Applications
#5Small-area high-efficiency read-only memory (ROM) array and method for operating the same
#6Low-leakage drain-programmed ROM
#7Memory array with reduced leakage current
#8Dual-bit ROM cell with virtual ground line and programmable metal track
#9Read only memory
#10Method to program bitcells of a ROM array
#11Read-only memory
#12Read only memory bitline load-balancing
#13MOSFET fuse and array element
#14Generating ROM bit cell arrays
#15Reading circuitry in memory
#16Generating ROM bit cell arrays
#17Sense amplifier
#18Reading circuitry in memory
#19Sequential memory and accessing method thereof
#20Sense amplifier
#21Memory and driving method therefor
#22Current sensing circuit and method of operation
#23Memory cell structure of metal programmable read only memory having bit cells with a shared transistor cell
#24Flat cell read only memory using common contacts for bit lines and virtual ground lines
#25High-speed programmable ROM, memory cell structure therefor, and method for writing data on/reading data from the programmable ROM
#26Read only memory devices with independently precharged virtual ground and bit lines
#27Memory cell structure of metal programmable read only memory having bit cells with a shared transistor cell
#28High density ROM cell with dual bit storage for high speed and low voltage
#29Read only memory having multi-bit line bit cell