Phase change random access memory and method of operating the same

Phase change random access memory devices and methods of operating the same

Resistive memory cells and devices having asymmetrical contacts

Phase change memory cell with high read margin at low power operation

Thin film layer, heating electrode, phase change memory including thin film layer and methods for forming the same

Side wall active pin memory and manufacturing method

Method for manufacturing a small pin on integrated circuits or other devices

Variable resistance device made of a material which has an electric resistance value changing in accordance with an applied electric field and maintains the electric resistance value after being changed in a nonvolatile manner, and a semiconductor apparatus including the same

Vertical elevated pore phase change memory

Phase change memory device and method for forming the same

Phase change memory with extra-small resistors

Process for manufacturing integrated resistor and phase-change memory element including this resistor

Memory cell with an asymmetrical area

Phase-change memory cell and method of fabricating the phase-change memory cell

Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby

Forming tapered lower electrode phase-change memories

Phase-change memory cell and method of fabricating the phase-change memory cell

Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure

Asymmetric-area memory cell

Phase changeable layers including protruding portions in electrodes thereof and methods of forming same

Multilayered phase change memory

Stacked nanosheet 4T2R unit cell for neuromorphic computing

Semiconductor memory device

Resistive memory device having a retention layer

Resistive memory device having a template layer

Three-dimensional resistive random access memory device containing selectively grown amorphous silicon-containing barrier and method of making the same