199935 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cell structure aspects Structure characterized by the electrode material, shape, etc.
SOCKET DESIGN FOR A MEMORY DEVICE
#2RRAM PROCESS INTEGRATION SCHEME AND CELL STRUCTURE WITH REDUCED MASKING OPERATIONS
#3SOCKET DESIGN FOR A MEMORY DEVICE
#4LOW RESISTANCE CROSSPOINT ARCHITECTURE
#5TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND METHODS OF THEIR OPERATION
#6STRUCTURES FOR THREE-TERMINAL MEMORY CELLS
#7Top electrode last scheme for memory cell to prevent metal redeposit
#8RRAM process integration scheme and cell structure with reduced masking operations
#9Gaussian sampling apparatus and method based on resistive random access memory
#10Memory cells having increased structural stability
#11Matrix of elementary switches forming a message, associated reading and writing methods
#12Socket design for a memory device
#13Programming enhancement in self-selecting memory
#14Memory devices
#15Low resistance crosspoint architecture
#16Memory cells with asymmetrical electrode interfaces
#17Dual damascene crossbar array for disabling a defective resistive switching device in the array
#18Top electrode last scheme for memory cell to prevent metal redeposit
#19Crested barrier device and synaptic element
#20Non-volatile memory
#21Electronic switching element
#22Semiconductor memory device with resistance change memory element and manufacturing method of semiconductor memory device with resistance change memory element
#23Set-while-verify circuit and reset-while verify circuit for resistive random access memory cells
#24Tunable forming voltage for RRAM device
#25Semiconductor memory device including phase change material layers and method for manufacturing thereof
#26Memory operation method and circuit
#27Low resistance crosspoint architecture
#28Tapered memory cell profiles
#29Socket design for a memory device
#30Memory devices
#31Memory device structure including tilted sidewall and method for fabricating the same
#32Tapered cell profile and fabrication
#33Switching atomic transistor and method for operating same
#34Semiconductor memory device
#35RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
#36RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
#37Resistive memory device having a template layer
#38Memory device and method of manufacturing the same
#39Fabrication of stackable embedded eDRAM using a binary alloy based on antimony
#40RRAM process integration scheme and cell structure with reduced masking operations
#41Electronic device and method for fabricating electronic device
#42Memory cells with asymmetrical electrode interfaces
#43Tapered cell profile and fabrication
#44Methods of forming a phase change memory with vertical cross-point structure
#45Resistive random access memory
#46Memory devices
#47Method of forming a metallic conductive filament and a random access memory device for carrying out the method
#48Memory device and method of manufacturing the same
#49Semiconductor system including a phase changeable memory device
#50Cross point resistive memory device with compensation for leakage current in read operation
#51Memory controller including error correction code circuit, memory system including the memory controller, and operating method of the memory system
#52RRAM devices with reduced forming voltage
#53Memory cells with asymmetrical electrode interfaces
#54Phase change memory operation method and circuit
#55Protuberant contacts for resistive switching devices
#56Semiconductor device
#57Memory device
#58Top electrode last scheme for memory cell to prevent metal redeposit
#59Phase-change memory cell with vanadium oxide based switching layer
#60Non-volatile memory
#61Resistance change device, manufacturing method for the same, and storage apparatus
#62Methods and systems for compensating for degradation of resistive memory device
#63Switching resistor and method of making such a device
#64Semiconductor memory device including phase change material layers and method for manufacturing thereof
#65Tapered memory cell profiles
#66Apparatuses and/or methods for operating a memory cell as an anti-fuse
#67Programming enhancement in self-selecting memory
#68Electrically actuated switch
#69Variable resistance memory stack with treated sidewalls
#70Resistive memory device having a template layer
#71Semiconductor devices
#72Resistive memory device having side barriers
#73RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR ION CONDUCTIVITY
#74Electronic switching element
#75Resistive memory device having a template layer
#76Resistive memory device having a template layer
#77Resistive memory device having a template layer
#78Resistive memory device having ohmic contacts
#79Resistive memory device having a conductive barrier layer
#80RRAM process integration scheme and cell structure with reduced masking operations
#81RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
#82Semiconductor memory device including phase change material layers and method for manufacturing thereof
#83Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array
#84Tapered memory cell profiles
#85Memory cells with asymmetrical electrode interfaces
#86Tapered cell profile and fabrication
#87Memory cell, memory cell array and operating method thereof
#88Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array
#89One-time-programmable resistive random access memory and method for forming the same
#90Protuberant contacts for resistive switching devices
#91Protuberant contacts for resistive switching devices
#92Switching atomic transistor and method for operating same
#93Electronic device and method for fabricating the same
#94Memory device and method of manufacturing the same
#95Tungsten oxide RRAM with barrier free structure
#96Memory devices
#97Synaptic crossbar memory array
#98Resistive memory device
#99Electronic device and method for fabricating the same
#100Electronic device and method for fabricating the same
#101Variable resistance memory devices
#102Methods of forming a phase change memory with vertical cross-point structure
#103Multi-state phase change memory device with vertical cross-point structure
#104Spin-transfer torque memory (STTM) devices having magnetic contacts
#105Semiconductor memory device
#106MEMORY DEVICE
#107Methods For Writing To An Array Of Resistive Random Access Memory Cells
#108Architectures and layouts for an array of resistive random access memory cells and read and write methods thereof
#109Memory cell, memory cell array, memory device and operation method of memory cell array
#110Multilayer selector device with low leakage current
#111Memory cells having increased structural stability
#112Phase change memory structures and devices
#113Current delivery and spike mitigation in a memory cell array
#114Phase change device configured to modify a plurality of reconfigurable layer regions among a plurality of contacts
#115Memristive control circuits with current control components
#116Spherical complementary resistance switchable filler and nonvolatile complementary resistance switchable memory comprising the same
#117Semiconductor devices
#118Select device for memory cell applications
#119Resistive memory and resistance window recovery method of resistive memory cell thereof
#120Doping of selector and storage materials of a memory cell
#121TEMPERATURE GRADIENTS FOR CONTROLLING MEMRISTOR SWITCHING
#122Programming enhancement in self-selecting memory
#123Memristive device based on tunable schottky barrier
#124Memory cell switch device
#125Semiconductor device and method for fabricating the same
#126Method for forming a non-volatile memory cell, non-volatile memory cell formed according to said method and microelectronic device comprising such memory cells
#127Method of forming a layer and a method of fabricating a variable resistance memory device using the same
#128Memory device
#129Memory device and rectifier
#130Memory device
#131Method of manufacturing a memory device
#132Electronic device and method for fabricating the same
#133Preparation method of Cu-based resistive random access memory
#134Polymer based memristors
#135VARIABLE RESISTANCE MEMORY DEVICE
#136Variable resistance element and memory device
#137Variable resistance memory stack with treated sidewalls
#138Metal oxide-resistive memory using two-dimensional edge electrodes
#139Semiconductor system including a phase changeable memory device
#140Electronic device and method for fabricating the same including variable resistance element and lower contact plug with sidewalls aligned to each other
#141Variable resistance memory device and method of manufacturing the same
#142Electronic component including molecular layer
#143Temperature gradients for controlling memristor switching
#144Apparatuses and/or methods for operating a memory cell as an anti-fuse
#145Select device for memory cell applications
#146Electrically actuated switch
#147Method for producing a memory device having a phase change film and reset gate
#148Side bottom contact RRAM structure
#149Planar memory cell architectures in resistive memory devices
#150Tube-shaped reconfigurable phase change device having multiple sets of contacts
#151Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer
#152LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR FABRICATING SAME
#153Method for reading out a resistive memory cell and a memory cell for carrying out the method
#154Electronic device and method for fabricating the same
#155Spin-transfer torque memory (STTM) devices having magnetic contacts
#156Resistive memory devices with a multi-component electrode
#157Apparatuses and/or methods for operating a memory cell as an anti-fuse
#158PROTON RESISTIVE MEMORY DEVICES AND METHODS
#159Resistive memory device with semiconductor ridges
#160Select device for memory cell applications
#161Semiconductor device having reset gate and phase change layer
#162RRAM and method of read operation for RRAM
#163Look-up table circuit and nonvolatile memory device
#164Resistive random-access memory cells
#165Method, system, and device for heating a phase change memory cell
#166Electronic device having resistance element
#167Low forming voltage non-volatile storage device
#168Method of manufacturing an electronic device including a semiconductor memory having a metal electrode and a metal compound layer surrounding sidewall of the metal electrode
#169Asymmetrical memristor
#170Electronic device with variable resistive patterns
#171Memory cells
#172Methods, devices and systems using over-reset state in a memory cell
#173Embedded nonvolatile memory elements having resistive switching characteristics
#174Memory device and method of manufacturing memory device
#175Phase change memory stack with treated sidewalls
#176Switching device structures and methods
#177Varistor
#178Semiconductor resistive memory devices including separately controllable source lines
#179Permutational memory cells
#180Nonvolatile resistive memory element with an oxygen-gettering layer
#181Method, system, and device for heating a phase change memory cell
#182Three-terminal synapse device and method of operating the same
#183Resistive random access memory device and manufacturing method thereof
#184Resistive-switching nonvolatile memory elements
#185Electronic device comprising semiconductor memory using metal electrode and metal compound layer surrounding sidewall of the metal electrode
#186All around electrode for novel 3D RRAM applications
#187Resistive random-access memory cells
#188Phase-change memory cells
#189Phase-change memory cells
#190Memory device
#191Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method
#192Switching device structures and methods
#193Electronic device having resistance element
#194Permutational memory cells
#195Electrically actuated switch
#196Non-volatile storage system using opposite polarity programming signals for MIM memory cell
#197Reduced diffusion in metal electrode for two-terminal memory
#198Resistive random access memory cells having variable switching characteristics
#199Resistive random access memory with non-linear current-voltage relationship
#200Methods of operating a phase change memory cell
#201Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell
#202Embedded nonvolatile memory elements having resistive switching characteristics
#203Methods, devices and systems using over-reset state in a memory cell
#204Method and structure of monolithically integrated IC and resistive memory using IC foundry-compatible processes
#205Resistive-switching nonvolatile memory elements
#206Apparatuses and/or methods for operating a memory cell as an anti-fuse
#207Semiconductor memory device
#208Permutational memory cells
#209RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
#210Method, system, and device for heating a phase change memory (PCM)cell
#211Variable resistance memory device and method of manufacturing the same
#212Phase-change random access memory device having multi-levels and method of manufacturing the same
#213Device structure for long endurance memristors
#214Low forming voltage non-volatile storage device
#215Drive method for memory element, and storage device using memory element
#216Nonvolatile memory elements with metal-deficient resistive-switching metal oxides
#217Nonvolatile semiconductor memory device and manufacturing method thereof
#218Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell
#219Resistive-switching nonvolatile memory elements
#220Variable resistance memory device and methods of forming the same
#221Phase-Change Memory and a Method of Programming the Same
#222Memory cells
#223Optimized electrodes for Re-RAM
#224Nonvolatile semiconductor memory device operating stably and method of control therein
#225Variable resistance semiconductor memory device
#226Non-volatile storage system using opposite polarity programming signals for MIM memory cell
#227Diamond type quad-resistor cells of PRAM
#228Three-dimensional memory structures having shared pillar memory cells
#229Memristors with asymmetric electrodes
#230Method of manufacturing a variable resistance memory device
#231Thermally stabilized electrode structure
#232Nonvolatile memory elements with metal deficient resistive switching metal oxides
#233Memory cells and methods of forming memory cells
#234Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
#235Optimized solid electrolyte for programmable metallization cell devices and structures
#236Resistive memory using SiGe material
#237Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#238Memristors with a switching layer comprising a composite of multiple phases
#239Method for making a bottom electrode geometry for phase change memory
#240NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
#241Programmable bipolar electronic device
#242Memristor Having a Nanostructure Forming An Active Region
#243RESISTIVE MEMORY CELLS AND DEVICES HAVING ASYMMETRICAL CONTACTS
#244Nanoscale switching device
#245Resistive memory device and method for fabricating the same
#246Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#247SEMICONDUCTOR MEMORY DEVICE
#248Method for forming organic layer pattern, organic layer pattern prepared by the same and organic memory devices comprising the pattern
#249Structures for resistive random access memory cells
#250Memory device including an electrode having an outer portion with greater resistivity
#251Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device
#252Diamond type quad-resistor cells of PRAM
#253Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device
#254Three-dimensional memory structures having shared pillar memory cells
#255Phase change memory
#256Optimized electrodes for Re-RAM
#257Metal oxide materials and electrodes for Re-RAM
#258Variable resistance memory device and methods of forming the same
#259Structures for resistive random access memory cells
#260Variable resistor element, manufacturing method thereof, and memory device provided with it
#261Resistive memory cells and devices having asymmetrical contacts
#262MEMORY DEVICES WITH CONCENTRATED ELECTRICAL FIELDS
#263Vertical string phase change random access memory device
#264INFORMATION RECORDING/REPRODUCING DEVICE
#265Memory controller
#266Optimized solid electrolyte for programmable metallization cell devices and structures
#267Phase change material with filament electrode
#268Semiconductor memory device
#269Thermally stabilized electrode structure
#270Integrated circuit including an electrode having an outer portion with greater resistivity
#271Phase change memory
#272Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory Module
#273Variable resistance element
#274Phase-change memory cell and method of fabricating the phase-change memory cell
#275Switching device, rewritable logic integrated circuit, and memory device
#276Resistive-switching nonvolatile memory elements
#277INFORMATION RECORDING/REPRODUCING DEVICE
#278Optimized solid electrolyte for programmable metallization cell devices and structures
#279Methods of forming phase changeable layers including protruding portions in electrodes thereof
#280Phase change memory device
#281Bottom electrode geometry for phase change memory
#282Method of selecting operating characteristics of a resistive memory device
#283Method for forming organic layer pattern, organic layer pattern prepared by the same and organic memory devices comprising the pattern
#284Electrically actuated switch
#285Multi-terminal electrically actuated switch
#286Phase change memory
#287CBRAM cell and CBRAM array, and method of operating thereof
#288Controllable ovonic phase-change semiconductor memory device and methods of programming the same
#289Memory cell having a switching active material, and corresponding memory device
#290Optimized solid electrolyte for programmable metallization cell devices and structures
#291Non-volatile memory devices including variable resistance material
#292Phase-change memory device and methods of fabricating the same
#293Phase change memory cell with high read margin at low power operation
#294Phase change memory cell with high read margin at low power operation
#295Connection electrode for phase change material, associated phase change memory element, and associated production process
#296Storage element and storage apparatus
#297Phase change memory cell and method of fabricating
#298Electrically rewritable non-volatile memory element and method of manufacturing the same
#299Phase change memory device and method of forming the same
#300Electrically rewritable non-volatile memory element and method of manufacturing the same