199941 ⎘
Indexing scheme relating to for features not covered by this group; Resistive array aspects Three dimensional array
Nonvolatile memory cell, nonvolatile memory device and method for driving the same
#902Nonvolatile Memory Elements And Memory Devices Including The Same
#903Three-dimensional crossbar array
#904Nonvolatile memory cell, nonvolatile memory device and method for driving the same
#9053D architecture for bipolar memory using bipolar access device
#906Nonvolatile memory cell, nonvolatile memory device and method for driving the same
#907Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
#908Apparatuses and methods including memory array and data line architecture
#909Resistive memory array and method for controlling operations of the same
#910Device having memristive memory
#911Cross point non-volatile memory cell
#912SEMICONDUCTOR MEMORY DEVICE HAVING A THREE-DIMENSIONAL STRUCTURE
#913Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same
#914Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
#915Memory device and fabricating method thereof
#916Single device driver circuit to control three-dimensional memory element array
#917Multilayer cross-point memory array having reduced disturb susceptibility
#918Memory arrays
#919Semiconductor memory device
#920Memory Cell
#921Memory Architecture of 3D Array With Diode in Memory String
#922Nonvolatile semiconductor memory device and method for erasing data thereof
#923NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
#924Semiconductor memory device
#925Resistive-switching nonvolatile memory elements
#926Memory array with local bitlines and local-to-global bitline pass gates and gain stages
#927Three-dimensional semiconductor memory devices having double cross point array and methods of fabricating the same
#928Memory chip, memory system, and method of accessing the memory chip
#929Phase-change memory device
#930Continuous programming of non-volatile memory
#931Semiconductor storage device with memory cell utilized as a set-dedicated memory cell
#932Array operation using a schottky diode as a non-ohmic selection device
#933Method and apparatus for decoding memory
#934Method and apparatus for decoding memory
#935Non-volatile storage system with dual block programming
#936Select devices including a semiconductive stack having a semiconductive material
#937DATA RETENTION STRUCTURE FOR NON-VOLATILE MEMORY
#938Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
#939Methods of forming circuitry components and methods of forming an array of memory cells
#940CONTEMPORANEOUS MARGIN VERIFICATION AND MEMORY ACCESS FOR MEMORY CELLS IN CROSS POINT MEMORY ARRAYS
#941Non-volatile semiconductor memory device
#942Vertically stacked field programmable nonvolatile memory and method of fabrication
#943Semiconductor memory device and controlling method thereof
#944Arrays of memory cells and methods of forming an array of vertically stacked tiers of memory cells
#945Program cycle skip
#946Sense amplification circuits, output circuits, nonvolatile memory devices, memory systems, memory cards having the same, and data outputting methods thereof
#947Non-volatile semiconductor memory device
#948Nonvolatile semiconductor memory device operating stably and method of control therein
#949Resistance-change memory
#950Crosspoint array and method of use with a crosspoint array having crossbar elements having a solid electrolyte material used as a rectifier with a symmetric or substantially symmetric resistive memory
#951Program cycle skip
#952Variable resistance nonvolatile memory device
#953Semiconductor memory device
#954Non-volatile storage system using opposite polarity programming signals for MIM memory cell
#955Three dimensional memory system with intelligent select circuit
#956Three dimensional memory system with page of data across word lines
#957METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON-BASED MEMORY DEVICES
#958Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
#959Methods of forming programmed memory cells
#960Semiconductor storage device
#961Buffering systems for accessing multiple layers of memory in integrated circuits
#962Nonvolatile semiconductor memory device including a via-hole with a narrowing cross-section and method of manufacturing the same
#963Nonvolatile semiconductor storage device and data writing method therefor
#964Hybrid MRAM array structure and operation
#965Memory architecture of 3D array with alternating memory string orientation and string select structures
#966Memory architecture of 3D array with improved uniformity of bit line capacitances
#967Memory architecture of 3D NOR array
#968Semiconductor memory device
#969System For Accessing Non-Volatile Memory
#970Combined memories in integrated circuits
#971Variable resistance nonvolatile memory device
#972Resistive random access memory with low current operation
#973Information recording/reproducing device
#974Semiconductor storage device
#975Resistance change memory device
#976Composition of memory cell with resistance-switching layers
#977Preservation Circuit And Methods To Maintain Values Representing Data In One Or More Layers Of Memory
#978Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof
#979Non-volatile memory having 3D array of read/write elements with low current structures and methods thereof
#980Nonvolatile semiconductor memory device
#981Multi-bit resistance-switching memory cell
#982Multi-bit resistance-switching memory cell
#983Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
#984Method of manufacturing non-volatile memory module
#985Re-writable resistance-switching memory with balanced series stack
#986Memory cell that includes a carbon-based memory element and methods of forming the same
#987Non-volatile memory devices having resistance changeable elements and related systems and methods
#988Three-dimensional memory device incorporating segmented array line memory array
#989Semiconductor memory device
#990Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same
#991Phase change memory device
#992Cross point variable resistance nonvolatile memory device
#993Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
#994Resistive memory devices, initialization methods, and electronic devices incorporating same
#995Memory device and method for manufacturing same
#996Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
#997Nanostructure quick-switch memristor and method of manufacturing the same
#998Semiconductor memory device
#999Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
#1000Memory element, stacking, memory matrix and method for operation
#1001Semiconductor device
#1002Semiconductor storage device including memory cells each having a variable resistance element
#1003Low read current architecture for memory
#1004Non-volatile semiconductor memory device
#1005Nonvolatile semiconductor memory device
#1006Memory device with vertically embedded non flash non volatile memory for emulation of NAND flash memory
#1007Reset circuit for resistive memory device
#1008Nonvolatile semiconductor memory device
#1009Resistance change element and resistance change memory
#1010Method for fabricating multi-resistive state memory devices
#1011Dual ported non volatile FIFO with third dimension memory
#1012Methods of forming memory cells and methods of forming programmed memory cells
#1013Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
#1014Information recording/reproducing device
#1015Large array of upward pointinig p-i-n diodes having large and uniform current
#1016Method for thin film memory
#1017Multilayer structures having memory elements with varied resistance of switching layers
#1018Semiconductor memory device
#1019Single device driver circuit to control three-dimensional memory element array
#1020Conductive metal oxide structures in non-volatile re-writable memory devices
#1021Memory device, systems and devices including a memory device, methods of operating a memory device, and/or methods of operating systems and devices including a memory device
#1022Memory element with a reactive metal layer
#1023Semiconductor memory device
#1024Conductive metal oxide structures in non volatile re writable memory devices
#1025Variable resistance memory with a select device
#1026System for accessing non volatile memory
#1027Array operation using a schottky diode as a non ohmic selection device
#1028Resistive memory device having voltage level equalizer
#1029Non-volatile memory element and memory device including the same
#1030Semiconductor memory device
#1031Resistance-change memory and method of operating the same
#1032Capacitive discharge method for writing to non-volatile memory
#1033Resistance change memory device
#1034Semiconductor storage device
#10353D memory array with improved SSL and BL contact layout
#1036Hierarchical on-chip memory
#1037Semiconductor memory with improved block switching
#1038Resistance change memory device
#1039Semiconductor memory device and control method of the same
#1040Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
#1041Method for forming a nonvolatile memory cell comprising a reduced height vertical diode
#1042Nonvolatile semiconductor memory device
#1043Nonvolatile stacked nand memory
#1044Three dimensional memory and methods of forming the same
#1045Structure and method for biasing phase change memory array for reliable writing
#1046Combined memories in integrated circuits
#1047Memory cell with resistance-switching layers including breakdown layer
#1048Composition of memory cell with resistance-switching layers
#1049Memory cell with resistance-switching layers and lateral arrangement
#1050Memory cell with resistance-switching layers
#1051Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor
#1052Method for manufacturing nonvolatile memory device
#1053Phase change memory device
#1054Continuous programming of non-volatile memory
#1055Nonvolatile semiconductor memory
#1056Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
#1057Memory arrays
#1058Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
#1059Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
#1060Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
#1061Semiconductor device
#1062Threshold device for a memory array
#1063Resistance change memory including a resistive element
#1064Nonvolatile memory device and method for driving same
#1065Semiconductor devices having a three-dimensional stacked structure and methods of de-skewing data therein
#1066Write buffering systems for accessing multiple layers of memory in integrated circuits
#1067TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY ELEMENT
#1068MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAME
#1069SEMICONDUCTOR DEVICE
#1070Semiconductor device
#1071Resistance change memory device that stores a reversible resistance value as data
#1072Contemporaneous margin verification and memory access for memory cells in cross-point memory arrays
#1073Shift register memory device, shift register, and data storage method
#1074Memory cell comprising a carbon nanotube fabric element and a steering element
#1075Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
#1076Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
#1077NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
#1078Memory/logic conjugate system
#1079THREE-DIMENSIONAL PHASE CHANGE MEMORY
#1080Resistive memory and method for controlling operations of the same
#1081Photo-responsive memory resistor and method of operation
#1082Semiconductor device
#1083Method for reading a third-dimensional embedded re-writeable non-volatile memory and registers
#1084Semiconductor memory device
#1085Semiconductor memory device
#1086Programming non-volatile storage element using current from other element
#1087Pulse reset for non-volatile storage
#1088Nonvolatile semiconductor memory device
#1089NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1090NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
#1091Resistance change memory
#1092Forming and training processes for resistance-change memory cell
#1093Resistance change memory
#1094Nonvolatile semiconductor memory device
#1095Stacked memory device and method of fabricating same
#1096Non-volatile storage with metal oxide switching element and methods for fabricating the same
#1097Resistance-switching memory cell with heavily doped metal oxide layer
#1098Semiconductor memory device including variable resistance element or phase-change element
#1099Bipolar memory cells and memory devices including the same
#1100Semiconductor device
#1101Information recording and reproducing device
#1102Nonvolatile memory device and nonvolatile memory apparatus
#1103Memory cell and methods of forming a memory cell comprising a carbon nanotube fabric element and a steering element
#1104Nonvolatile semiconductor memory device
#1105Memory device having variable resistance memory cells disposed at crosspoint of wirings
#1106Semiconductor memory device
#1107Semiconductor storage device including plural clock oscillator circuits operating at different frequencies
#1108Nonvolatile memory device, programming method thereof and memory system including the same
#1109NON-VOLATILE MEMORY DEVICE HAVING 3D STRUCTURE AND METHOD FOR FABRICATING THE SAME
#1110Memory device and method for manufacturing same
#1111Preservation circuit and methods to maintain values representing data in one or more layers of memory
#1112Multi-resistive state memory device with conductive oxide electrodes
#1113Memory device with vertically embedded non-flash non-volatile memory for emulation of NAND flash memory
#1114NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
#1115Low-cost high-density rectifier matrix memory
#1116Data read/write device
#1117Semiconductor devices and methods of driving the same
#1118Resistance change memory
#1119Nonvolatile memory devices and related methods and systems
#1120Memory and methods of forming the same to enhance scalability of non-volatile two-terminal memory cells
#1121Resistive random access memory devices and resistive random access memory arrays having the same
#1122Semiconductor memory device using variable resistance element or phase-change element as memory device
#1123Program cycle skip
#1124Read buffering systems for accessing multiple layers of memory in integrated circuits
#1125Page register outside array and sense amplifier interface
#1126THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHODS OF FABRICATING AND OPERATING THE SAME
#1127Semiconductor memory device
#1128Resistance change memory and manufacturing method thereof
#1129Nonvolatile semiconductor storage device and data writing method therefor
#1130Nonvolatile semiconductor memory device
#1131Nonvolatile memory cells and nonvolatile memory devices including the same
#1132Resistance change memory and manufacturing method thereof
#1133Resistance change memory and manufacturing method thereof
#1134System for accessing non-volatile memory
#1135Semiconductor memory device
#1136Three-dimensional memory devices and methods of manufacturing and operating the same
#1137Multi-layered memory devices
#1138Multi-layered memory devices
#1139SEMICONDUCTOR DEVICE
#1140Structure and method for biasing phase change memory array for reliable writing
#1141Resistance change memory device
#1142Nonvolatile semiconductor memory device
#1143Nonvolatile semiconductor memory device
#1144Memory cells
#1145Thin-film memory system equipped with a thin-film address decoder and memory controller
#1146Method for forming composites of sub-arrays of fullerene nanotubes
#1147Non-volatile memory device and method of manufacturing the same
#1148Phase change memory device
#1149Method for contemporaneous margin verification and memory access for memory cells in cross-point memory arrays
#1150Reverse set with current limit for non-volatile storage
#1151Non-volatile memory device including a stacked structure and voltage application portion
#1152Resistance change memory and control method thereof
#1153Nonvolatile memory device and method for manufacturing same
#1154Resistive storage-based semiconductor memory device
#1155Information recording and reproducing device
#1156Nonvolatile metal oxide memory element and nonvolatile memory device
#1157Semiconductor memory device including resistance-change memory
#1158SEMICONDUCTOR MEMORY DEVICE
#1159Non-volatile memory device and programming method thereof
#1160Semiconductor storage device
#1161Information recording and reproducing device for high-recording density
#1162Semiconductor memory system with first and second nonvolatile memories storing user and management data and a controller controlling read/write of the memories and having simultaneous data transfer in and out of one of the memories
#1163Memory system with controller for managing management data and reverse flag for reversing write data
#1164SEMICONDUCTOR STORAGE DEVICE AND METHOD OF CONTROLLING THE SAME
#1165Memory system with controller for managing management data and reverse flag for reversing write data
#1166Non-volatile memory device and method for manufacturing the same
#1167Method for adjusting a resistive change element using a reference
#1168Nonvolatile semiconductor memory device
#1169Large array of upward pointing P-I-N diodes having large and uniform current
#1170Resistive random access memory device and memory array including the same
#1171Memory device with vertically embedded non-flash non-volatile memory for emulation of NAND flash memory
#1172Non-volatile memory devices including stacked NAND-type resistive memory cell strings
#1173Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
#1174Method for resetting a resistive change memory element
#1175Semiconductor storage device
#1176Semiconductor memory with improved memory block switching
#1177INFORMATION RECORDING AND REPRODUCING APPARATUS
#1178Information recording and reproducing device
#1179SEMICONDUCTOR MEMORY DEVICE
#1180Nonvolatile semiconductor memory device and method of data write/data erase therein
#1181Information recording and reproducing device
#1182Vertically stacked field programmable nonvolatile memory and method of fabrication
#1183Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
#1184Semiconductor device
#1185Semiconductor device
#1186Systems and methods of cell selection in three-dimensional cross-point array memory devices
#1187Information recording and reproducing device
#1188Semiconductor memory device
#1189Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
#1190Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof
#1191Nonvolatile semiconductor memory device generating different write pulses to vary resistances
#1192Nonvolatile storage device and method for writing into the same
#1193RESISTANCE CHANGE MEMORY
#1194Phase change memory device having multi-level and method of driving the same
#1195RESISTANCE CHANGE MEMORY
#1196Nonvolatile memory with variable resistance change layers
#1197Stacked memory devices
#1198Nonvolatile memory cell comprising a diode and a resistance-switching material
#1199Limited charge delivery for programming non-volatile storage elements
#1200Phase-change memory security device