Nonvolatile memory cell, nonvolatile memory device and method for driving the same

MEMORY ARRAYS INCLUDING MEMORY LEVELS THAT SHARE CONDUCTORS, AND METHODS OF FORMING SUCH MEMORY ARRAYS

Semiconductor memory device

Reduced complexity array line drivers for 3D matrix arrays

Nonvolatile memory device

Integrated circuit 3D phase change memory array and manufacturing method

Phase change memory device

Resistance change memory device for storing information in a non-volatile manner by changing resistance of memory material

Preservation circuit and methods to maintain values representing data in one or more layers of memory

Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines

Nonvolatile memory device and manufacturing method

Programming non-volatile storage element using current from other element

Multi-bit resistance-switching memory cell

Cross point non-volatile memory cell

Three-Dimensional Memory Devices

Square pillar-shaped switching element for memory device and method of manufacturing the same

Stacked memory device including a pre-decoder/pre-driver sandwiched between a plurality of inter-decoders/inter-drivers

Three-dimensional non-volatile register with an oxygen-ion-based memory element and a vertically-stacked register logic

Electrically rewritable nonvolatile semiconductor storage device including a variable resistive element

Semiconductor memory device, method of manufacturing the same, and method of screening the same

Information recording/reproducing device

Semiconductor memory device

Semiconductor memory device

Systems and devices including local data lines and methods of using, making, and operating the same

Resistance change memory device having high-speed two-step write mode

Vertical switch three-dimensional memory array

Semiconductor storage device

Resistive memory devices having a stacked structure and methods of operation thereof

Nonvolatile semiconductor memory device

Non-volatile FIFO with third dimension memory

Nonvolatile semiconductor memory device and manufacturing method for same

Nonvolatile semiconductor memory device with transistor and variable resistor

Three-dimensional semiconductor structure

Low read current architecture for memory

Data read/write device

Fuse elements based on two-terminal re-writeable non-volatile memory

Data storage system with refresh in place

Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof

Semiconductor storage device

Nonvolatile memory cell comprising a reduced height vertical diode

Resistance-type random access memory device having three-dimensional bit line and word line patterning

Nonvolatile memory device and method for operating the same

Three dimensional magnetic memory and/or recording device

Integrated circuit incorporating decoders disposed beneath memory arrays

Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array

Memory scrubbing in third dimension memory

Multi-structured memory

Device fabrication

Array operation using a schottky diode as a non-ohmic isolation device

High voltage switching circuitry for a cross-point array

Conductive metal oxide structures in non-volatile re-writable memory devices

Multi-resistive state memory device with conductive oxide electrodes

Method to program a memory cell comprising a carbon nanotube fabric element and a steering element

Three-dimensional architecture for integration of CMOS circuits and nano-material in hybrid digital circuits

Semiconductor memory device

Self-aligned three-dimensional non-volatile memory fabrication

Variable resistance memory device and system

Semiconductor storage device

Non-volatile memory device with data storage layer

Non-volatile semiconductor storage device and method of manufacturing the same

Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same

Semiconductor storage device

CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND METHODS OF FORMING THE SAME

Tree-structure memory device

Multi-layered memory apparatus including oxide thin film transistor

Non-volatile resistive sense memory on-chip cache

Semiconductor storage device

Stacked memory device and method thereof

Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters

Continuous programming of non-volatile memory

Contemporaneous margin verification and memory access for memory cells in cross point memory arrays

Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same

Resistance change memory device

Semiconductor memory device

Non-volatile memory device and method of operating the same

Device for storing data with optical addressing

Resistance change nonvolatile memory device

Methods for increasing carbon nano-tube (CNT) yield in memory devices

Hybrid MRAM array structure and operation

Electrically isolated gated diode nonvolatile memory

Semiconductor memory device

Semiconductor memory device and method of manufacturing the same

Memory cell that includes a carbon-based memory element and methods of forming the same

Method of Manufacturing a Resistivity Changing Memory Cell, Resistivity Changing Memory Cell, Integrated Circuit, and Memory Module

MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME

MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME

Memory cell that includes a carbon-based memory element and methods forming the same

Semiconductor memory device

Preservation circuit and methods to maintain values representing data in one or more layers of memory

Resistance change semiconductor storage device

Vertical string phase change random access memory device

INFORMATION RECORDING/REPRODUCING DEVICE

Semiconductor memory device and redundancy method therefor

CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME

Pulse reset for non-volatile storage

Capacitive discharge method for writing to non-volatile memory

Reverse set with current limit for non-volatile storage

Large array of upward pointing p-i-n diodes having large and uniform current

Method and apparatus for decoding memory

Memory controller

Thin film input/output

Standalone thin film memory

Thin film logic circuitry

Multi-terminal reversibly switchable memory device

Two-Terminal Reversibly Switchable Memory Device

Thin-film memory system having thin-film peripheral circuit and memory controller for interfacing with a standalone thin-film memory

Multi-bit phase-change memory device

Integrated circuit and method of operating an integrated circuit

Method for manufacturing a nonvolatile storage device

Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element

Resistance change memory device with stabilizing circuit coupled in series with selected resistance change memory cell

Nonvolatile semiconductor memory device

MEMORY DEVICE WITH DIFFERENT TYPES OF PHASE CHANGE MEMORY

Nonvolatile semiconductor memory device

Method of Operating an Integrated Circuit, and Integrated Circuit

Semiconductor device having user field and vendor field

Multilayer storage class memory using externally heated phase change material

Memory device capable of one-time data writing and repeated data reproduction, and method and display apparatus for operating the memory device

Multiple layer resistive memory

Memory cell that includes a carbon-based memory element and methods of forming the same

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same

Nonvolatile semiconductor memory device using a variable resistance film and method of manufacturing the same

Nonvolatile semiconductor memory device

Three-dimensional memory devices and methods of manufacturing and operating the same

Memory using variable tunnel barrier widths

Nonvolatile semiconductor memory apparatus and manufacturing method thereof

Semiconductor memory device

Data retention structure for non-volatile memory

Low cost, high-density rectifier matrix memory

Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory element

NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME

Semiconductor memory device

Integrated Circuit, Memory Device, and Method of Manufacturing an Integrated Circuit

Integrated Circuit and Method of Improved Determining a Memory State of a Memory Cell

Resistance change memory device

Systems and devices including local data lines and methods of using, making, and operating the same

Nonvolatile semiconductor storage device and data writing method therefor

Carbon diode array for resistivity changing memories

Semiconductor memory device including a reference cell

Non-Volatile Memory Element with Improved Temperature Stability

Methods of forming memory cells, and methods of forming programmed memory cells

STACKED DIE MEMORY

Non-volatile register having a memory element and register logic vertically configured on a substrate

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Non-volatile memory device and method of manufacturing the same

Integrated circuit having a memory cell arrangement and method for reading a memory cell state using a plurality of partial readings

INTEGRATED CIRCUIT INCLUDING DIODE MEMORY CELLS

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Resistive memory devices and methods of manufacturing the same

Buffering systems methods for accessing multiple layers of memory in integrated circuits

RESISTANCE CHANGE MEMORY DEVICE

Array of fullerene nanotubes

Method of programming cross-point diode memory array

Semiconductor device

Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

Large capacity one-time programmable memory cell using metal oxides

Tree-structure memory device

MEMORY CELL WITH PLANARIZED CARBON NANOTUBE LAYER AND METHODS OF FORMING THE SAME

Method and system for accessing non-volatile memory

Emulation of a NAND memory system

Multi-die memory, apparatus and multi-die memory stack

Disturb control circuits and methods to control memory disturbs among multiple layers of memory

Integrated circuit including diode memory cells

Three-dimensional magnetic memory with multi-layer data storage layers

Semiconductor memory device

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

Resistance change memory device

Nonvolatile semiconductor memory device including via-holes continuously formed through plural cell array layers

NONVOLATILE SEMICONDUCTOR STORAGE APPARATUS AND METHOD OF MANUFACTURING THE SAME

Non-volatile memory device and method of operating the same

Resistance change memory device

Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device

Memory device

METHOD TO FORM A REWRITEABLE MEMORY CELL COMPRISING A DIODE AND A RESISTIVITY-SWITCHING GROWN OXIDE

Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory Module

Three-dimensional memory module architectures

Multi-layer electrode, cross point memory array and method of manufacturing the same

Multi-layered memory devices

Memory emulation in an electronic organizer

Multi-resistive state memory device with conductive oxide electrodes

Low read current architecture for memory

Threshold device for a memory array

Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same

Increased switching cycle resistive memory element

Method and apparatus providing multi-planed array memory device

Integrated circuit with Resistivity changing memory cells and methods of operating the same

Method for cutting fullerene nanotubes

Memory cell with voltage modulated sidewall poly resistor

Method of making memory cell with voltage modulated sidewall poly resistor

Resistance change memory device

Semiconductor device

Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

Junction diode with reduced reverse current

High forward current diodes for reverse write 3D cell

Method for forming a patterned array of fullerene nanotubes

Resistance change memory device with a variable resistance element formed of a first and a second composite compound

Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array

UNIPOLAR RESISTANCE RANDOM ACCESS MEMORY (RRAM) DEVICE AND VERTICALLY STACKED ARCHITECTURE

Method for fabricating multi-resistive state memory devices

Resistive-switching nonvolatile memory elements

Integrated Circuit, Method of Operating an Integrated Circuit, Memory Cell Array, and Memory Module

Integrated Circuit, Memory Module, Method of Operating an Integrated Circuit, and Computing System

Nonvolatile memory device having twin memory cells

Semiconductor constructions comprising vertically-stacked memory units that include diodes utilizing at least two different dielectric materials, and electronic systems

Selectively conducting devices, diode constructions, constructions, and diode forming methods

Integrated Circuit, Memory Module, Method of Operating an Integrated Circuit, Method of Fabricating an Integrated Circuit, Computer Program Product, and Computing System

Integrated Circuit, Memory Module, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Computer Program Product

Phase-change memory device that stores information in a non-volatile manner by changing states of a memory material

Method for classifying memory cells in an integrated circuit

Integrated Circuit, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, Active Element, Memory Module, and Computing System

Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device

Method of Manufacturing a Memory Device, Memory Device, Cell, Integrated Circuit, Memory Module, and Computing System

Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit

Method of manufacturing an integrated circuit, an integrated circuit, and a memory module

Integrated circuit, memory cell array, memory module, method of operating an integrated circuit, and computing system

INTEGRATED MEMORY

Nonvolatile semiconductor memory device and data erase/write method thereof

INFORMATION RECORDING/REPRODUCING DEVICE

Method to program a memory cell comprising a carbon nanotube fabric and a steering element

Large array of upward pointing p-i-n diodes having large and uniform current

Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions

Memory cell comprising a carbon nanotube fabric element and a steering element

Rectifying element for a crosspoint based memory array architecture

Methods for producing composites of fullerene nanotubes and compositions thereof

Multi-level data memorisation device with phase change material

Semiconductor storage device and method of controlling the same

Nonvolatile memory device using resistance material

Nonvolatile memory device having memory and reference cells

Semiconductor storage device and method of controlling the same

Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof

Logic devices comprising carbon nanotube patterns

Semiconductor memory and method for manufacturing the same

Memory cell of a resistive semiconductor memory device, a resistive semiconductor memory device having a three-dimensional stack structure, and related methods

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

MEMORY HAVING STORAGE LOCATIONS WITHIN A COMMON VOLUME OF PHASE CHANGE MATERIAL

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Multi-stack memory device

Structure and method for biasing phase change memory array for reliable writing

Vertically stacked field programmable nonvolatile memory and method of fabrication

Phase changing memory device

Semiconductor memory device having a three-dimensional cell array structure

Combined memories in integrated circuits

Method for producing a catalyst support and compositions thereof

Phase change memory device

Modifiable gate stack memory element

Modifiable gate stack memory element

Memory devices based on electric field programmable films

Thin film transistor for cross point memory and method of manufacturing the same

Fullerene nanotube compositions

Method for purification of as-produced fullerene nanotubes

FULLERENE NANOTUBE COMPOSITIONS

Ultra low-cost solid-state memory

Nonvolatile memory cell comprising a reduced height vertical diode

Systems for reverse bias trim operations in non-volatile memory

Systems for controlled pulse operations in non-volatile memory

Controlled pulse operations in non-volatile memory

High bandwidth one time field-programmable memory

Mixed-use memory array

Non-volatile memory cell with embedded antifuse

Method of making non-volatile memory cell with embedded antifuse

Nonvolatile memory device and methods of operating and fabricating the same

Two terminal memory array having reference cells

Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module

Two terminal memory array having reference cells

Two terminal memory array having reference cells

Resistance change memory device

Resistance change memory device

Resistance change memory device

Storage device

Resistance change memory device

Resistance change memory device

Resistance change memory device

Resistance change memory device

Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation

Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode

Resistance change memory device

Resistance change memory device

Resistance change memory device

Forming nonvolatile phase change memory cell having a reduced thermal contact area

Three-dimensional memory device incorporating segmented array line memory array

Memory having storage locations within a common volume of phase change material

Three dimensional programmable device and method for fabricating the same

Magnetic switching element and signal processing device using the same

Method to form upward pointing p-i-n diodes having large and uniform current

Memory having nanotube transistor access device

Nonvolatile semiconductor memory device

Data read/write device

Unipolar resistance random access memory (RRAM) device and vertically stacked architecture

Memory cell comprising switchable semiconductor memory element with trimmable resistance

Method for using a multi-use memory cell and memory array

Multi-use memory cell and memory array

Electro-magnetic storage device and method

Semiconductor memory device comprising one or more injecting bilayer electrodes

Magnetic switching element and signal processing device using the same

Continuous fiber of fullerene nanotubes