199941 ⎘
Indexing scheme relating to for features not covered by this group; Resistive array aspects Three dimensional array
Memory access
#1502Method for producing self-assembled objects comprising fullerene nanotubes and compositions thereof
#1503Program/erase waveshaping control to increase data retention of a memory cell
#1504Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements
#1505Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements
#1506Switchable resistive memory with opposite polarity write pulses
#1507Memory cell comprising a thin film three-terminal switching device having a metal source and /or drain region
#1508Memory cell with high-K antifuse for reverse bias programming
#1509Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
#1510Magnetic random access memory
#1511Nonvolatile memory cell comprising a diode and a resistance-switching material
#1512Rewriteable memory cell comprising a diode and a resistance-switching material
#1513Multi-resistive state element with reactive metal
#1514Two terminal memory array having reference cells
#1515Three-dimensional nanoscale crossbars
#1516Storage device having storage cells having a size less than a write light wavelength
#1517Three-dimensional memory devices and methods of manufacturing and operating the same
#1518Variable breakdown characteristic diode
#1519Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof
#1520Three-dimensional memory devices
#1521Phase change memory device
#1522Phase change memory device
#1523Method for reducing the size and nanowire length used in nanowire crossbars without reducing the number of nanowire junctions
#15241T-nmemory cell structure and its method of formation and operation
#1525Memory using mixed valence conductive oxides
#1526Forming nonvolatile phase change memory cell having a reduced thermal contact area
#1527Write-once nonvolatile phase change memory array
#1528Structure and method for biasing phase change memory array for reliable writing
#1529Vertically stacked field programmable nonvolatile memory and method of fabrication
#1530Vertically stacked field programmable nonvolatile memory and method of fabrication
#1531Electro-resistance element and method of manufacturing the same
#1532Multibit phase change memory device and method of driving the same
#1533Electrochemical lithography memory system and method
#1534Fuse memory cell comprising a diode, the diode serving as the fuse element
#1535Method to minimize formation of recess at surface planarized by chemical mechanical planarization
#1536Memory using variable tunnel barrier widths
#1537Three dimensional magnetic memory and/or recording device
#1538High-density NVRAM
#1539Two terminal memory array having reference cells
#1540Ultrathin chemically grown oxide film as a dopant diffusion barrier in semiconductor devices
#1541Storage device
#1542Method for forming an array of single-wall carbon nanotubes in an electric field and compositions thereof
#1543Method for forming a patterned array of single-wall carbon nanotubes
#1544Memory element having islands
#15453D cross-point memory array with shared connections
#1546Polymer dielectrics for memory element array interconnect
#1547Memory cell having an electric field programmable storage element, and method of operating same
#1548Memory devices based on electric field programmable films
#1549Phase change access device for memories
#1550Multi-resistive state element with reactive metal
#1551Molecular memory arrays and devices
#1552Columnar 1T-N memory cell structure
#1553Non-volatile memory cell comprising a dielectric layer and a phase change material in series
#1554Addressing circuit for a cross-point memory array including cross-point resistive elements
#1555Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory
#1556Integrated circuit incorporating three-dimensional memory array with dual opposing decoder arrangement
#1557Manufacturing method for integrated circuit having disturb-free programming of passive element memory cells
#1558Nonvolatile memory cell comprising a reduced height vertical diode
#1559Apparatus and method for disturb-free programming of passive element memory cells
#1560Semiconductor storage device and method of controlling the same
#1561Memory device and method for simultaneously programming and/or reading memory cells on different levels
#1562Memory devices based on electric field programmable films
#1563Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
#1564Semiconductor device
#1565Magnetic random access memory
#1566Phase change access device for memories
#1567Memory device and methods of using and making the device
#1568Computing memory architecture
#1569Memory Arrays
#1570Stacked nanosheet 4T2R unit cell for neuromorphic computing
#1571Neural network circuits providing early integration before analog-to-digital conversion
#1572Three-dimensional nonvolatile memory
#1573Concurrent multi-state program verify for non-volatile memory
#1574Decoding scheme for 3D cross-point memory array
#1575Semiconductor memory device
#1576Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
#1577Write-once read-many amorphous chalcogenide-based memory
#1578Apparatuses and methods for sensing memory cells
#1579Three-dimensional resistive random access memory device containing selectively grown amorphous silicon-containing barrier and method of making the same
#1580Complementary resistance switchable filler and nonvolatile complementary resistance switchable memory comprising the same
#1581Methods and apparatus for three-dimensional nonvolatile memory
#1582Method for manufacturing 3D NAND memory using gate replacement, and resulting structures
#1583Self-selecting local bit line for a three-dimensional memory array
#1584Memory having an interlayer insulating structure with different thermal resistance
#1585Vertical thin film transistors with surround gates
#1586Method of operating and apparatus of memristor arrays with diagonal lines interconnect between memristor cells
#1587Semiconductor memory device
#1588Multi-level reversible resistance-switching memory
#1589Memory metal scheme
#1590Anti-fuse type one-time programmable memory cell and anti-fuse type one-time programmable memory cell arrays
#1591Sensing method for a flash memory and memory device therewith
#1592Three dimensional memory device having well contact pillar and method of making thereof
#1593Word line repair for 3D vertical channel memory