199944 ⎘
Indexing scheme relating to for features not covered by this group; Resistive array aspects Array wherein each memory cell has more than one access device
Accessing phase change memories
#302Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure
#303Segmented MRAM memory array
#304Memory device using nanotube cells
#305Nano tube cell and memory device using the same
#306Phase change resistor cell and nonvolatile memory device using the same
#307Phase change resistor cell, nonvolatile memory device and control method using the same
#308Discharge of conductive array lines in fast memory
#309Multi-layer magnetic switching element comprising a magnetic semiconductor layer having magnetization induced by applied voltage
#310Cross-bar arrays having steering element with diode
#311Stacked nanosheet 4T2R unit cell for neuromorphic computing
#312Non-volatile memory cell arrays and methods of fabricating semiconductor devices