REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS

MACRO AND SRAM BIT CELL COOPTIMIZATOIN FOR PERFORMANCE (LONG/SHORTWORDLINE COMBO SRAM)

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENTIAL THRESHOLD VOLTAGES

MACRO AND SRAM BIT CELL COOPTIMIZATOIN FOR PERFORMANCE (LONG/SHORTWORDLINE COMBO SRAM)

REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS

SYNAPTIC ARRAY FOR FIELD-TRAINING-CAPABLE IN-MEMORY COMPUTING USING NON-VOLATILE MEMORY TECHNOLOGIES

Crossbar array circuit with parallel grounding lines

2T-1R architecture for resistive ram

Memory Cells, Memory Cell Programming Methods, Memory Cell Reading Methods, Memory Cell Operating Methods, and Memory Devices

Semiconductor memory devices with differential threshold voltages

Optimized static random access memory

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCESS DEVICE

Processing unit with fast read speed memory device

Crossbar array circuits with 2T1R RRAM cells for low voltage operations

Fast read speed memory device

Optimized static random access memory

Silicon over insulator two-transistor one-resistor in-series resistive memory cell

Crossbar array circuit with parallel grounding lines

2T-1R architecture for resistive RAM

Memristive bit cell with switch regulating components

Crossbar array circuit with parallel grounding lines

Method and Apparatus for Vitamin D Enhancement in Mushrooms

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMORY DEVICES

Three terminal selectors for memory applications and their methods of fabrication

Reducing disturbance in crossbar array circuits

Resistive memory architectures with multiple memory cells per access device

Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices

Fast read speed memory device

2T-1R architecture for resistive RAM

One-time programmable memory using gate-all-around structures

Resistive memory architectures with multiple memory cells per access device

Apparatus for low power write and read operations for resistive memory

Conductive metal oxide structures in non-volatile re-writable memory devices

Fast read speed memory device

Memory Devices, Memory Device Constructions, Constructions, Memory Device Forming Methods, Current Conducting Devices, and Memory Cell Programming Methods

Two transistor, one resistor non-volatile gain cell memory and storage element

Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices

Memory cell, memory cell array and operating method thereof

Memory write and read assistance using negative differential resistance devices

One-time programmable devices using gate-all-around structures

Nonvolatile memory device and operating method thereof

2T-1R architecture for resistive ram

Integrated 1T1R RRAM memory cell

Method, system and device for non-volatile memory device operation

Method and apparatus for vitamin D enhancement in mushrooms

Apparatus for low power write and read operations for resistive memory

Resistive memory architectures with multiple memory cells per access device

Non-volatile register file including memory cells having conductive oxide memory element

Controlling current through correlated electron switch elements during programming operations

2T-1R architecture for resistive RAM

Fast read speed memory device

Method, system and device for non-volatile memory device operation with low power, high speed and high density

One-time programmable devices having a semiconductor fin structure with a divided active region

Resistive random access memory cell

Conductive metal oxide structures in non-volatile re-writable memory devices

Signal processing circuit

Programmable resistive device and memory using diode as selector

Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices

Memory devices and memory device forming methods

Memory cell and array having device, P-type transistor and N-type transistor

Correlated electron switch

Anti-fuses memory cell and memory apparatus

Memory including bi-polar memristor

Method to fabricate discrete vertical transistors

Semiconductor constructions, electronic systems, and methods of forming cross-point memory arrays

Arrays of bit-cells

Non-volatile memory device and structure thereof

Digitally trimmable integrated resistors including resistive memory elements

Apparatus and method for performing fourier transform

Resistive memory architectures with multiple memory cells per access device

One-time programmable memory devices using FinFET technology

One-time programmable device with integrated heat sink

Method, system and device for non-volatile memory device operation

Memory devices and memory device forming methods

2T-1R architecture for resistive RAM

Electronic device including a semiconductor memory having a barrier layer

Content addressable memory and memory cell thereof

Conductive metal oxide structures in non-volatile re-writable memory devices

Nonvolatile variable resistance memory circuit which includes magnetic tunnel junction element

Method for operating semiconductor device

Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices

Memory device and access method

Non-volatile register file including memory cells having conductive oxide memory element

Apparatus for low power write and read operations for resistive memory

Fast read speed memory device

Method for capacitively reading resistive memory elements and nonvolatile, capacitively readable memory elements for implementing the method

Semiconductor constructions, and methods of forming cross-point memory arrays

Semiconductor storage device

Resistive change memory including current limitation circuit

Method and system of programmable resistive devices with read capability using a low supply voltage

Resistive cross-point architecture for robust data representation with arbitrary precision

Non-volatile memory using bi-directional resistive elements

Programmable-resistance non-volatile memory

Resistive change memory

Electronic device

Embedded nonvolatile memory elements having resistive switching characteristics

Electronic device having semiconductor memory comprising variable resistance elements for storing data

Magnetoresistive element having a magnetic layer including O

Semiconductor device and electronic device

Electronic device

Non-volatile memory device

Memory array architecture with two-terminal memory cells

Semiconductor device comprising memory circuit

Semiconductor device

One-time programmable memory devices using FinFET technology

Resistive memory architectures with multiple memory cells per access device

Resistive devices and methods of operation thereof

Memory cells with rectifying device

Memory device and access method

Resistance-based memory cells with multiple source lines

Electronic device

Phase change memory device having multi-level and method of driving the same

Customizable nonlinear electrical devices

Memory devices

Resistive-switching nonvolatile memory elements

Circuit and system of using junction diode of MOS as program selector for programmable resistive devices

Programmably reversible resistive device cells using CMOS logic processes

Circuit and system of using FinFET for building programmable resistive devices

High operating speed resistive random access memory

Conductive metal oxide structures in non-volatile re-writable memory devices

Resistance memory device and apparatus, fabrication method thereof, operation method thereof, and system having the same

Resistive switching memory device and method for operating the same

3D variable resistance memory device and method of manufacturing the same

3D variable resistance memory device having junction FET and driving method thereof

Electronic device and method for fabricating the same

Fast read speed memory device

Memory architecture and cell design employing two access transistors

Semiconductor device and its manufacturing method

Nonvolatile semiconductor memory device

Apparatuses and operation methods associated with resistive memory cell arrays with separate select lines

Thermodynamic bit formed of two memristors

Hybrid memory

Programmable resistive device and memory using diode as selector

One-time programmable memories using polysilicon diodes as program selectors

Resistance-based memory having two-diode access device

Embedded nonvolatile memory elements having resistive switching characteristics

Multi-port memory devices and methods having programmable impedance elements

Driving method of variable resistance element and non-volatile memory device

Resistive-switching nonvolatile memory elements

Conductive metal oxide structures in non volatile re-writable memory devices

Resistive devices and methods of operation thereof

Reconfigurable circuit and method for refreshing reconfigurable circuit

Circuit and system of using junction diode as program selector for one-time programmable devices

Semiconductor memory device

DUAL-CELL MTJ STRUCTURE WITH INDIVIDUAL ACCESS AND LOGICAL COMBINATION ABILITY

Semiconductor memory device including a memory cell comprising a D/A converter

Resistance-change type non-volatile semiconductor memory

Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming

Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink

Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices

Magnetoresistive effect element and magnetic random access memory using the same

Multi-port non-volatile memory that includes a resistive memory element

Drive method for memory element, and storage device using memory element

Circuit and system of using FinFET for building programmable resistive devices

Apparatuses and operation methods associated with resistive memory cell arrays with separate select lines

Phase change memory device having multi-level and method of driving the same

Non-volatile memory device

Select devices for memory cell applications

Device fabrication

Memory cell that includes multiple non-volatile memories

Semiconductor device

Memory architecture and cell design employing two access transistors

Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array

Amorphous silicon RRAM with non-linear device and operation

Memory Cell

Memory array architecture with two-terminal memory cells

Programmable resistive memory unit with multiple cells to improve yield and reliability

Programmable resistive memory unit with data and reference cells

Resistive-switching nonvolatile memory elements

Non-volatile memory device having phase-change material and method for fabricating the same

Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory

Multiple-bit programmable resistive memory using diode as program selector

Two-terminal memory cell and semiconductor memory device based on different states of stable current

Semiconductor device and its manufacturing method

Semiconductor device

Nonvolatile memory element having a tantalum oxide variable resistance layer

Semiconductor device and method of controlling semiconductor device

Memory unit and method of operating the same

Nonvolatile memory device and method for programming the same

Punch-through diode

Phase change device for interconnection of programmable logic device

RESISTANCE CHANGE TYPE MEMORY

Nonvolatile memory architecture

Semiconductor integrated circuit

Resistance based memory having two-diode access device

Nonvolatile memory element having a tantalum oxide variable resistance layer

Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices

Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods

Resistive memory architectures with multiple memory cells per access device

Circuit and system of using at least one junction diode as program selector for memories

Memory using a plurality of diodes as program selectors with at least one being a polysilicon diode

Memory devices using a plurality of diodes as program selectors with at least one being a polysilicon diode

Programmably reversible resistive device cells using CMOS logic processes

Sensing circuit for programmable resistive device using diode as program selector

Reversible resistive memory using diodes formed in CMOS processes as program selectors

Circuit and system of using a junction diode as program selector for resistive devices

Reversible resistive memory using polysilicon diodes as program selectors

Programmably reversible resistive device cells using polysilicon diodes

Circuit and system of using a polysilicon diode as program selector for resistive devices in CMOS logic processes

One-Time Programmable memories using junction diodes as program selectors

Circuit and system of using junction diode as program selector for one-time programmable devices

One-time programmable memories using polysilicon diodes as program selectors

Circuit and system of using polysilicon diode as program selector for one-time programmable devices

Memory devices using a plurality of diodes as program selectors for memory cells

Conductive metal oxide structures in non-volatile re-writable memory devices

Three dimensionally stacked non volatile memory units

Semiconductor device

Conductive metal oxide structures in non volatile re writable memory devices

Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense MOSFET

SEMICONDUCTOR DEVICE

Resistance change memory device that stores a reversible resistance value as data

Semiconductor memristor devices

Thermally Stable Nanoscale Switching Device

Memory cells with rectifying device

Memory cell that includes multiple non-volatile memories

Multi-port non-volatile memory that includes a resistive memory element

Semiconductor device having its standby current reduced

Semiconductor device and its manufacturing method

PHASE CHANGE MEMORY DEVICE, MANUFACTURING METHOD THEREOF AND OPERATING METHOD THEREOF

Methods of Driving Nonvolatile Memory Devices that Utilize Read/Write Merge Circuits

Memory devices and methods of operating the same

Transistor

Method for making a self aligning memory device

Nonvolatile semiconductor memory device and method of data write/data erase therein

RESISTANCE CHANGE TYPE MEMORY

Phase change memory device having multi-level and method of driving the same

Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices

Three dimensionally stacked non volatile memory units

RESISTANCE-CHANGE MEMORY

Phase change memory with dual word lines and source lines and method of operating same

Device fabrication

Conductive metal oxide structures in non-volatile re-writable memory devices

Quad memory cell and method of making same

Resistive memory architectures with multiple memory cells per access device

DOUBLE SOURCE LINE-BASED MEMORY ARRAY AND MEMORY CELLS THEREOF

Resistance variable memory apparatus

Programmable metallization cell switch and memory units containing the same

Nonvolatile memory apparatus

Charge mapping memory array formed of materials with mutable electrical characteristics

Charge mapping memory array formed of materials with mutable electrical characteristics

SEMICONDUCTOR DEVICE

Charge mapping memory array formed of materials with mutable electrical characteristics

Resistance change nonvolatile memory device

Memory architecture and cell design employing two access transistors

Magnetoresistance effect element and MRAM

Cross point memory cell with distributed diodes and method of making same

Multiple series passive element matrix cell for three-dimensional arrays

Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device

Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods

Resistance change memory device with stabilizing circuit coupled in series with selected resistance change memory cell

Multilayer storage class memory using externally heated phase change material

Variable resistance nonvolatile memory apparatus

Nonvolatile semiconductor memory device, and writing method, reading method and erasing method of nonvolatile semiconductor memory device

Pyridinyl Amides for the Treatment of CNS and Metabolic Disorders

Multiple memory cells with rectifying device

RESISTANCE CONTROL IN CONDUCTIVE BRIDGING MEMORIES

Resistance change type memory

Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices

Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell

Charge mapping memory array formed of materials with mutable electrical characteristics

Integrated circuit including quench devices

Phase change memory device, manufacturing method thereof and operating method thereof

Phase-change random access memory device and semiconductor memory device

Phase change memory with dual word lines and source lines and method of operating same

Block erase for phase change memory

Selection device for re-writable memory

Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array

Resistive memory architectures with multiple memory cells per access device

Increasing effective transistor width in memory arrays with dual bitlines

Resistive-switching nonvolatile memory elements

Integrated Circuit, Memory Module, Method of Operating an Integrated Circuit, and Computing System

Nonvolatile memory device having twin memory cells

Semiconductor constructions comprising vertically-stacked memory units that include diodes utilizing at least two different dielectric materials, and electronic systems

Selectively conducting devices, diode constructions, constructions, and diode forming methods

Symmetrical programmable memresistor crossbar structure

STRUCTURE FOR INCREASING EFFECTIVE TRANSISTOR WITDTH IN MEMORY ARRAYS WITH DUAL BITLINES

Method and structure for increasing effective transistor width in memory arrays with dual bitlines

Memory cell with separate read and program paths

Memory including two access devices per phase change element

MEMORY HAVING STORAGE LOCATIONS WITHIN A COMMON VOLUME OF PHASE CHANGE MATERIAL

Nonvolatile memory devices that utilize read/write merge circuits

Semiconductor memory

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING INTO THE SAME

Magnetic switching element of a magnetic memory cell having a ferromagnetic layer formed between a gate insulating film and a magnetic semiconductor layer

Phase change memory cells with dual access devices

Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same

Multi-port phase change random access memory cell and multi-port phase change random access memory device including the same

High bandwidth one time field-programmable memory

Memory architecture and cell design employing two access transistors

Memory having storage locations within a common volume of phase change material

Semiconductor memory

Transistor structure with high input impedance and high current capability

Semiconductor memory device

Memory element, memory read-out element and memory cell

Multi-context memory cell

Method and structure for high performance phase change memory

Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure

Programmable semiconductor memory device

Semiconductor memory device with stacked control transistors

Diode array architecture for addressing nanoscale resistive memory arrays