199946 ⎘
Indexing scheme relating to for features not covered by this group; Resistive array aspects Array using an access device for each cell which being not a transistor and not a diode
Nonvolatile Semiconductor Memory Device
#302INTEGRATED CIRCUIT INCLUDING MEMORY CELLS WITH TUNNEL FET AS SELECTION TRANSISTOR
#303Programmable matrix array with chalcogenide material
#304Threshold device for a memory array
#305Reading phase change memories with select devices
#306Method of manufacturing semiconductor device having transition metal oxide layer and related device
#307Reading a phase change memory
#308Memory cell with voltage modulated sidewall poly resistor
#309Method of making memory cell with voltage modulated sidewall poly resistor
#310Integrated circuit with memory having a current limiting switch
#311Semiconductor device
#312NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
#313Memory element array having switching elements including a gap of nanometer order
#314Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
#315Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
#316Resistive memory architectures with multiple memory cells per access device
#317Resistive-switching nonvolatile memory elements
#318Integrated Circuit, Memory Module, Method of Operating an Integrated Circuit, and Computing System
#319Nonvolatile memory device having twin memory cells
#320Nonvolatile memory device and method to control the same
#321Memory including bipolar junction transistor select devices
#322Rectifying element for a crosspoint based memory array architecture
#323Memory architecture and method of manufacture and operation thereof
#324INTEGRATED CIRCUIT INCLUDING AN ARRAY OF MEMORY CELLS HAVING DUAL GATE TRANSISTORS
#325Memory cell with separate read and program paths
#326Nonvolatile memory devices that utilize read/write merge circuits
#327Semiconductor memory
#328Memory cell with trigger element
#329Vertically stacked field programmable nonvolatile memory and method of fabrication
#330Solid electrolyte memory device
#331Phase change memory cells with dual access devices
#332SEMICONDUCTOR MEMORY DEVICE AND LAYOUT STRUCTURE OF WORD LINE CONTACTS
#333Multiple-read resistance-variable memory cell structure and method of sensing a resistance thereof
#334Method for reading phase change memories and phase change memory
#335Method and apparatus processing variable resistance memory cell write operation
#336Nonvolatile memory device and methods of operating and fabricating the same
#337Non-volatile memory device including a variable resistance material
#338Memory device driving circuit
#339Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
#340Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
#341Forming ovonic threshold switches with reduced deposition chamber gas pressure
#342Semiconductor memory
#343Integrated circuit having a memory cell
#344Memory circuit, method for operating a memory circuit, memory device and method for producing a memory device
#345Memory circuit having a resistive memory cell and method for operating such a memory circuit
#346Nonvolatile semiconductor memory device
#347Resistive RAM having at least one varistor and methods of operating the same
#348Method and apparatus processing variable resistance memory cell write operation
#349Transistor structure with high input impedance and high current capability
#350Memory architecture containing a high density memory array of semi-volatile or non-volatile memory elements
#351Memory cell comprising switchable semiconductor memory element with trimmable resistance
#352Method for using a multi-use memory cell and memory array
#353Memory circuit
#354Multi-use memory cell and memory array
#355Resistance variable memory element with threshold device and method of forming the same
#356Resistance variable memory element with threshold device and method of forming the same
#357Integrated memory circuit comprising a resistive memory element and a method for manufacturing such a memory circuit
#358Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
#359Detecting switching of access elements of phase change memory cells
#360Memory architecture and method of manufacture and operation thereof
#361Storage device and semiconductor apparatus
#362Semiconductor integrated circuit device
#363Methods and memory structures using tunnel-junction device as control element
#364Semiconductor integrated circuit, operating method thereof, and IC card including the circuit
#365Reading phase change memories
#366Reading a phase change memory
#367Heating phase change material
#368Detecting switching of access elements of phase change memory cells
#369Electronic device with a memory cell
#370Nonvolatile semiconductor memory device
#371Resistive memory device having resistor part for controlling switching window
#372Programmable matrix array with chalcogenide material
#373Vertically stacked field programmable nonvolatile memory and method of fabrication
#374Vertically stacked field programmable nonvolatile memory and method of fabrication
#375Nonvolatile memory device having two or more resistance elements and methods of forming and using the same
#376Non-volatile memory cell and operating method thereof
#377Memory architecture and method of manufacture and operation thereof
#378Diode array architecture for addressing nanoscale resistive memory arrays
#379Programmable matrix array with chalcogenide material
#380Memory device with unipolar and bipolar selectors
#381Using a phase change memory as a replacement for a buffered flash memory
#382Accessing phase change memories
#383Providing current for phase change memories
#384Phase change access device for memories
#385Memory device using nanotube cells
#386Nano tube cell and memory device using the same
#387Rewrite prevention in a variable resistance memory
#388Semiconductor integrated circuit device
#389Phase change resistor cell and nonvolatile memory device using the same
#390Phase change resistor cell and nonvolatile memory device using the same
#391Memory architecture and method of manufacture and operation thereof
#392Integrated circuit incorporating three-dimensional memory array with dual opposing decoder arrangement
#393Memory device and method for simultaneously programming and/or reading memory cells on different levels
#394Semiconductor device
#395Read bias scheme for phase change memories
#396Phase change access device for memories
#397Discharge of conductive array lines in fast memory
#398Cross-bar arrays having steering element with diode
#399Electronic device and method for reading data of memory cell
#400High density stacked CNT memory cube arrays with memory selectors