199946 ⎘
Indexing scheme relating to for features not covered by this group; Resistive array aspects Array using an access device for each cell which being not a transistor and not a diode
APPARATUS AND METHODS FOR REFERENCE READ TECHNIQUES FOR THRESHOLD SELECTOR DEVICE MEMORY
#2Auto-referenced memory cell read techniques
#3Memory Cells, Memory Cell Arrays, Methods of Using and Methods of Making
#4SEMICONDUCTOR DEVICE, AND METHOD FOR OPERATING THE SAME
#5Cross-point array IHOLD read margin improvement
#6Memory cells, memory cell arrays, methods of using and methods of making
#7ELEMENTARY CELL COMPRISING A RESISTIVE MEMORY AND A DEVICE INTENDED TO FORM A SELECTOR, CELL MATRIX, ASSOCIATED MANUFACTURING AND INITIALIZATION METHODS
#8Apparatuses including multi-level memory cells and methods of operation of same
#9RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCESS DEVICE
#10Auto-referenced memory cell read techniques
#11Apparatuses and methods including memory and operation of same
#12Non-volatile memory
#13Memory device with a plurality of metal chalcogenide layers
#14Selector device for two-terminal memory
#15Memory device and operating method thereof
#16Semiconductor memory device with resistance change memory element and manufacturing method of semiconductor memory device with resistance change memory element
#17Memory cells, memory cell arrays, methods of using and methods of making
#18Auto-referenced memory cell read techniques
#19Efficient utilization of memory die area
#20Method and Apparatus for Vitamin D Enhancement in Mushrooms
#21CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMORY DEVICES
#22Memory device and operating method of memory device
#23Auto-referenced memory cell read techniques
#24Memory device and method of manufacturing the same
#25Resistive memory architectures with multiple memory cells per access device
#26Memory cells, memory cell arrays, methods of using and methods of making
#27Transition metal doped germanium-antimony tellurium (GST) memory device components and composition
#28Auto-referenced memory cell read techniques
#29Chalcogenide memory device components and composition
#30Methods of forming a phase change memory with vertical cross-point structure
#31Auto-referenced memory cell read techniques
#32Memory device and method of manufacturing the same
#33Auto-referenced memory cell read techniques
#34Semiconductor device
#35Semiconductor system including a phase changeable memory device
#361S-1C DRAM with a non-volatile CBRAM element
#37Current compliance layers and memory arrays comprising thereof
#38Variable resistance memory device and method of manufacturing the same
#39Memory cells, memory cell arrays, methods of using and methods of making
#40Apparatuses and methods for accessing variable resistance memory device
#41Devices for programming resistive change elements in resistive change element arrays
#42Storage device and control method for controlling operations of the storage device
#43Transition metal doped germanium-antimony-tellurium (GST) memory device components and composition
#44Non-volatile memory
#45Efficient utilization of memory die area
#46Apparatuses and methods for bi-directional access of crosspoint arrays
#47Resistive memory architectures with multiple memory cells per access device
#48Auto-referenced memory cell read techniques
#49Electronic device and method for driving the same
#50Conductive metal oxide structures in non-volatile re-writable memory devices
#51Methods of forming semiconductor devices having threshold switching devices
#52Methods, apparatuses, and circuits for programming a memory device
#53Memory cells, memory cell arrays, methods of using and methods of making
#54Non-contact electron beam probing techniques and related structures
#55Non-volatile memory apparatus including voltage clamping circuit
#56Semiconductor devices
#57Apparatuses and methods including memory and operation of same
#58Apparatuses including multi-level memory cells and methods of operation of same
#59Memory Devices, Memory Device Constructions, Constructions, Memory Device Forming Methods, Current Conducting Devices, and Memory Cell Programming Methods
#60Efficient utilization of memory die area
#61Semiconductor device
#62Memory write and read assistance using negative differential resistance devices
#63Memory device and method of manufacturing the same
#64Memory cells, memory cell arrays, methods of using and methods of making
#65Non-contact electron beam probing techniques and related structures
#66Memory device with read-write-read memory controller
#67Methods, apparatuses, and circuits for programming a memory device
#68Memory device
#69Selector device for two-terminal memory
#70Program operations in memory
#71Chalcogenide memory device components and composition
#72Methods of forming a phase change memory with vertical cross-point structure
#73Multi-state phase change memory device with vertical cross-point structure
#74Memory device
#75Read circuit for a variable resistance memory device
#76Apparatuses and methods for current limitation in threshold switching memories
#77Multilayer selector device with low holding voltage
#78Multilayer selector device with low leakage current
#79Provision of structural integrity in memory device
#80Tip-contact controlled three dimensional (3D) vertical self select memory
#81Memory cells, memory cell arrays, methods of using and methods of making
#82Apparatuses and methods including memory and operation of same
#83Variable resistance memory devices and methods of forming the same
#84Semiconductor devices
#85Neuromorphic device having a plurality of synapses blocks
#86Apparatuses including memory cells and methods of operation of same
#87Method and apparatus for vitamin D enhancement in mushrooms
#88Resistive memory architectures with multiple memory cells per access device
#89Doping of selector and storage materials of a memory cell
#90Memory cell switch device
#91Semiconductor device and method for fabricating the same
#92Apparatuses and methods for accessing variable resistance memory device
#93Semiconductor storage device
#94Resistive memory apparatus using variable-resistance channels with high- and low-resistance regions
#95Memory cells, memory cell arrays, methods of using and methods of making
#96Efficient utilization of memory die area
#97Memory, information processing system, and method of controlling memory
#98Switch device and storage unit
#99Non-volatile memory apparatus including voltage clamping circuit
#100Electronic device and method for driving the same
#101Bi-directional RRAM decoder-driver
#102Phase changeable memory device having a cross point array structure
#103Methods, apparatuses, and circuits for programming a memory device
#104Conductive metal oxide structures in non-volatile re-writable memory devices
#105Apparatuses and methods for current limitation in threshold switching memories
#106Memory cells, memory cell arrays, methods of using and methods of making
#107Semiconductor system including a phase changeable memory device
#108Memory devices and memory device forming methods
#109Memory and electronic device including the same
#110Apparatuses including multi-level memory cells and methods of operation of same
#111Variable resistance memory device and method of manufacturing the same
#112Anti-fuses memory cell and memory apparatus
#113Memory cell selector and method of operating memory cell
#114Apparatuses and methods for bi-directional access of cross-point arrays
#115Resistive memory devices and arrays
#116Electronic device and method including memory with first and second write currents
#117Memory and electronic device including the same
#118Apparatuses and methods including memory and operation of same
#119Resistive memory architectures with multiple memory cells per access device
#120Memory device and method for manufacturing the same
#121Memory devices and memory device forming methods
#122Negative differential resistance circuit element
#123Memory cell having resistive and capacitive storage elements
#124Phase change memory current
#125Switch device and storage unit having a switch layer between first and second electrodes
#126Electronic device including a semiconductor memory having a barrier layer
#127Electronic device
#128Method and apparatus for decoding memory
#129Apparatuses and methods for bi-directional access of cross-point arrays
#130Conductive metal oxide structures in non-volatile re-writable memory devices
#131Apparatuses and methods for accessing variable resistance memory device
#132Semiconductor integrated circuit device including a leakage current sensing unit and method of operating the same
#133Method for capacitively reading resistive memory elements and nonvolatile, capacitively readable memory elements for implementing the method
#134Method and apparatus for decoding memory
#135Resistive memory device capable of increasing sensing margin by controlling interface states of cell transistors
#136Sensing a non-volatile memory device utilizing selector device holding characteristics
#137Resistive switching for non volatile memory device using an integrated breakdown element
#138Electronic device
#139Electronic device and method for fabricating the same
#140Immunity of phase change material to disturb in the amorphous phase
#141Resistive memory architectures with multiple memory cells per access device
#142Nonvolatile memory device having a current limiting element
#143Resistive memory device capable of increasing sensing margin by controlling interface states of cell transistors
#144Immunity of phase change material to disturb in the amorphous phase
#145Methods, apparatuses, and circuits for programming a memory device
#146Memory devices
#147Resistive-switching nonvolatile memory elements
#148Conductive metal oxide structures in non-volatile re-writable memory devices
#149Immunity of phase change material to disturb in the amorphous phase
#150Resistive random access memory cells having metal alloy current limiting layers
#151Semiconductor device with PCM memory cells and nanotubes and related methods
#152Memory elements with series volatile and nonvolatile switches
#153Three-dimensional nonvolatile memory and method of fabrication
#154Resistive switching for non volatile memory device using an integrated breakdown element
#155Barrier design for steering elements
#156Nonvolatile memory device having a current limiting element
#157Methods of manufacturing embedded bipolar switching resistive memory
#158Heating phase change material
#159Variable resistive element, storage device and driving method thereof
#160Immunity of phase change material to disturb in the amorphous phase
#161Methods of operating variable resistance memory devices
#162Resistive-switching nonvolatile memory elements
#163Method for nondestructively reading resistive memory elements
#164Conductive metal oxide structures in non volatile re-writable memory devices
#165Pillar-shaped nonvolatile memory and method of fabrication
#166Memory device having an integrated two-terminal current limiting resistor
#167Memory device having an integrated two-terminal current limiting resistor
#168Resistive random access memory device, method for manufacturing the same, and method for operating the same
#169Resistance change memory
#170Device fabrication
#171Nonvolatile memory element, and nonvolatile memory device
#172Methods, apparatuses, and circuits for programming a memory device
#173Nonvolatile memory cell, nonvolatile memory device and method for driving the same
#174Nonvolatile memory cell, nonvolatile memory device and method for driving the same
#175Nonvolatile memory cell, nonvolatile memory device and method for driving the same
#176Nonvolatile memory device having a current limiting element
#177Resistive RAM, method for fabricating the same, and method for driving the same
#178Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
#179Nonvolatile memory device and method for programming nonvolatile memory element
#180Memory Cell
#181Drift management in a phase change memory and switch (PCMS) memory device
#182Fast verify for phase change memory with switch
#183Resistive-switching nonvolatile memory elements
#184Array operation using a schottky diode as a non-ohmic selection device
#185Method and apparatus for decoding memory
#186Method and apparatus for decoding memory
#187Vertically stacked field programmable nonvolatile memory and method of fabrication
#188Resistance change memory
#189Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
#190Nonvolatile semiconductor memory device
#191Crosspoint array and method of use with a crosspoint array having crossbar elements having a solid electrolyte material used as a rectifier with a symmetric or substantially symmetric resistive memory
#192Memory cells, memory cell arrays, methods of using and methods of making
#193Nonvolatile memory element having a tantalum oxide variable resistance layer
#194Integrated circuitry, switches, and methods of selecting memory cells of a memory device
#195Resistive random access memory with low current operation
#196Nonvolatile memory device and method for programming the same
#197Three-terminal ovonic threshold switch as a current driver in a phase change memory
#198NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
#199Cross point variable resistance nonvolatile memory device
#200Memory array with metal-insulator transition switching devices
#201Nonvolatile memory element having a tantalum oxide variable resistance layer
#202Multi-level resistance change memory
#203Reading a phase change memory
#204Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
#205Resistive memory architectures with multiple memory cells per access device
#206Method for thin film memory
#207Conductive metal oxide structures in non-volatile re-writable memory devices
#208Hierarchical cross-point array of non-volatile memory
#209Semiconductor device and method for driving the same
#210Conductive metal oxide structures in non volatile re writable memory devices
#211Variable resistance memory with a select device
#212Array operation using a schottky diode as a non ohmic selection device
#213Magnetic tunnel junction and memristor apparatus
#214NON-VOLATILE MEMORY WITH OVONIC THRESHOLD SWITCH AND RESISTIVE MEMORY ELEMENT
#215Rectification element and method for resistive switching for non volatile memory device
#216Threshold device for a memory array
#217Nonvolatile memory device
#218Resistance variable memory apparatus
#219Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
#220Immunity of phase change material to disturb in the amorphous phase
#221Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof
#222Non-volatile memory cell with programmable unipolar switching element
#223Nonvolatile semiconductor memory device
#224Non-volatile memory cell with non-ohmic selection layer
#225Reading phase change memories
#226Methods of Driving Nonvolatile Memory Devices that Utilize Read/Write Merge Circuits
#227Current steering element, storage element, storage device, and method for manufacturing current steering element
#228Memory devices and methods of operating the same
#229Transistor
#230Programming phase change memories using ovonic threshold switches
#231Use of symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
#232Resistive switching in nitrogen-doped MgO
#233Energy-efficient set write of phase change memory with switch
#234Nonvolatile memory cells and nonvolatile memory devices including the same
#235Magnetic tunnel junction and memristor apparatus
#236Memory including bipolar junction transistor select devices
#237Reading a phase change memory
#238Nonvolatile memory element and nonvolatile memory device
#239Non-volatile memory array architecture incorporating 1T-1R near 4Fmemory cell
#240CROSS POINT MEMORY ARRAY DEVICES
#241Method for making a self aligning memory device
#242Non-volatile memory device and programming method thereof
#243Green transistor for resistive random access memory and method of operating the same
#244Non-volatile memory cell with resistive sense element block erase and uni-directional write
#245Nonvolatile semiconductor memory device and method of data write/data erase therein
#246Vertically stacked field programmable nonvolatile memory and method of fabrication
#247Semiconductor device
#248Non-volatile memory cell with non-ohmic selection layer
#249Hierarchical cross-point array of non-volatile memory
#250Non-volatile memory cell stack with dual resistive elements
#251PHASE CHANGE MEMORY CELL WITH SELECTING ELEMENT
#252RESISTANCE CHANGE MEMORY
#253Nonvolatile memory cell, nonvolatile memory device and method for driving the same
#254Nonvolatile memory element, and nonvolatile memory device
#255Memory devices including decoders having different transistor channel dimensions and related devices
#256Nonvolatile semiconductor memory device
#257Bipolar CMOS select device for resistive sense memory
#258Resistance variable memory apparatus
#259Integrated circuit incorporating decoders disposed beneath memory arrays
#260NONVOLATILE MEMORY WITH OVONIC THRESHOLD SWITCHES
#261Device fabrication
#262Array operation using a schottky diode as a non-ohmic isolation device
#263Method for reading semiconductor memories and semiconductor memory
#264Conductive metal oxide structures in non-volatile re-writable memory devices
#265Resistive memory architectures with multiple memory cells per access device
#266Reading threshold switching memory cells
#267SEMICONDUCTOR MEMORY DEVICE HAVING CROSS-POINT STRUCTURE
#268Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
#269Resistance variable memory apparatus
#270Non-volatile memory cell with programmable unipolar switching element
#271Programmable metallization cell switch and memory units containing the same
#272Magnetic tunnel junction and memristor apparatus
#273Programmable matrix array with chalcogenide material
#274Non-volatile memory array with resistive sense element block erase and uni-directional write
#275Silicon-based nanoscale resistive device with adjustable resistance
#276MEMORY ELEMENT AND MEMORY APPARATUS
#277High density resistance based semiconductor device
#278Resistance variable memory apparatus
#279Multi-terminal resistance device
#280Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device
#281Memory cells, memory cell arrays, methods of using and methods of making
#282Method and apparatus for decoding memory
#283Thin film input/output
#284Standalone thin film memory
#285Thin film logic circuitry
#286Integrated circuit and method of operating an integrated circuit
#287Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
#288Nonvolatile semiconductor memory device
#289Semiconductor RAM device with writing voltage higher than withstand voltage of select transistor
#290Variable resistance nonvolatile memory apparatus
#291Immunity of phase change material to disturb in the amorphous phase
#292Integrated Circuit and Method of Improved Determining a Memory State of a Memory Cell
#293Method and apparatus for accessing a bidirectional memory
#294RESISTANCE CONTROL IN CONDUCTIVE BRIDGING MEMORIES
#295Phase change memory with bipolar junction transistor select device
#296Two terminal nonvolatile memory using gate controlled diode elements
#297Phase change memory and control method thereof
#298Reading phase change memories
#299Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device
#300Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof