201584 ⎘
Thin magnetic films, e.g. of one-domain structure; Spin-exchange-coupled multilayers, e.g. nanostructured superlattices; Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
Sub-classes:Crystallized YPtBi (111) Topological Semi-Metal (TSM) Induced by (111) or (002)-(111) Buffers
#2High Oxidation Resistive Cap Layers For Topological Semi-metal and Insulator Materials
#3High Resistivity Buffers and Interlayers to Promote BiSb (012) and (001) and Minimized Shunting
#4Nitrogenating of Topological Semi-Metal Films to Increase Resistivity
#5ORBITRONICS DEVICE HAVING ORBITAL HALL EFFECT OR INVERSE ORBITAL HALL EFFECT, AND METHOD FOR ENHANCING EFFICIENCY THEREOF
#6STACKED FILM, MAGNETORESISTIVE EFFECT ELEMENT, SEMICONDUCTOR MEMORY AND LOGIC LSI
#7SPIN MEMORY ENCRYPTION
#8MAGNETIC MEMORY DEVICE USING MAGNON SPIN VALVE INCLUDING TOPOLOGICAL MATERIAL AND EXCHANGE COUPLING
#9MAGNETORESISTANCE ELEMENT INCLUDING A SKYRMION LAYER AND A VORTEX LAYER THAT ARE MAGNETICALLY COUPLED TO EACH OTHER
#10METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SEEDED SPIN-ORBIT TORQUE
#11SPIN VALVE DEVICE AND METHOD FOR FORMING A SPIN VALVE DEVICE
#12METHOD TO CALCULATE PERFORMANCE OF A MAGNETIC ELEMENT COMPRISING A FERROMAGNETIC LAYER EXCHANGE-COUPLED TO AN ANTIFERROMAGNETIC LAYER
#13SPIN VALVE DEVICE AND METHOD FOR FORMING A SPIN VALVE DEVICE
#14TRUE RANDOM NUMBER GENERATOR
#15Storage element and storage apparatus
#16FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, MAGNETIC TUNNEL JUNCTION STRUCTURE, MAGNETORESISTIVE RANDOM ACCESS MEMORY, AND IRON-COBALT BASED TARGET
#17PHOTONIC SPIN REGISTER, INFORMATION WRITING METHOD, AND INFORMATION READ-OUT METHOD
#18SPIN VALVE DEVICE WITH PRECIOUS METAL-FREE ANTIFERROMAGNET IN STABILIZATION LAYER
#19MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR MAGNETIC LAYERS AND METHOD OF MANUFACTURING SAME
#20Magnetic sensor
#21Magnetic heterojunction structure and method for controlling and achieving logic and multiple-state storage functions
#22Reconfigurable PUF device based on fully electric field-controlled domain wall motion
#23Magnetoresistive element having a nano-current-channel structure
#24APPARATUS AND METHOD FOR TERAHERTZ-BASED READING OF DATA RECORDED INTO RUDERMAN-KITTEL-KASUYA-YOSIDA (RKKY)-BASED MAGNETIC MEMORY WITHOUT DISSIPATION OF ENERGY IN THE MEDIUM
#25Storage element and storage apparatus
#26Electrical offset compensating in a bridge using more than four magnetoresistance elements
#27Spin memory encryption
#28Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping
#29Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same
#30Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy
#31Magnetic tunnel junction element and magnetoresistive memory device
#32Spin wave switch and filter based on magnonic crystal
#33Magnetic sensor
#34Magnetic sensor device
#35Exchange-coupled film and magnetoresistive element and magnetic sensing device including the same
#36Magnetic sensing devices based on interlayer exchange-coupled magnetic thin films
#37Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
#38Magnetic device which improves write error rate while maintaining retention properties
#39Dual tunnel magnetoresistance (TMR) element structure
#40Storage element and storage apparatus
#41Magnetic memory device having a ferromagnetic element
#42Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
#43SPIN VALVE WITH BIAS ALIGNMENT
#44Low-power terahertz magnetic nano-oscillating device
#45METHOD AND A MECHANISM CAPABLE OF ANNEALING A GMR SENSOR
#46Tunable multilayer terahertz magnon generator
#47Spin-orbit-torque magnetization rotational element and spin-orbit-torque magnetoresistance effect element
#48Tunnel magnetoresistance effect device and magnetic device using same
#49METHOD AND A MECHANISM CAPABLE OF ANNEALING A GMR SENSOR
#50Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication
#51MAGNETIC DEVICE
#52Magnetic sensor device
#53Spin transfer torque MRAM with a spin torque oscillator stack and methods of making the same
#54Magnetoresistance effect element
#55Magnetoresistive random access memory and method for manufacturing the same
#56Antiferromagnet based spin orbit torque memory device
#57Spin transfer torque MRAM with a spin torque oscillator stack and methods of making the same
#58Spin-transfer torque MRAM with magnetically coupled assist layers and methods of operating the same
#59Storage element and storage apparatus
#60Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator
#61Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy
#62Antiferromagnet field-effect based logic circuits including spin orbital coupling channels with opposing preferred current paths and related structures
#63Magnetic sensor
#64MAGNETIC TUNNEL JUNCTION ELEMENT WITH A ROBUST REFERENCE LAYER
#65Magnetic sensors with a mixed oxide passivation layer
#66Multilayer device having an improved antiferromagnetic pinning layer and a corresponding manufacturing method
#67Spin current magnetization rotation magnetoresistance effect element, and magnetic memory
#68Magnetoresistive stack/structure and methods therefor
#69Quaternary spin hall memory
#70Magnetoresistive device with bias magnetic field generation unit having main and side portions partially surrounding free layer perimeter
#71Magnetic memory incorporating dual selectors
#72Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junction
#73Storage element and storage apparatus
#74Spin valve with bias alignment
#75Magnetoresistance effect device
#76EXCHANGE-COUPLED FILM, MAGNETORESISTIVE ELEMENT INCLUDING THE SAME, AND MAGNETIC SENSING DEVICE
#77Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
#78Magnetic junction device having an inter-layer stack between a hard magnetic layer and a reference layer, and associated magnetic random access memory
#79Magnetic device
#80Magnetic and spin logic devices based on Jahn-Teller materials
#81Laminated structure and spin modulation element
#82Laminated structure and spin modulation element
#83Laminated structure and spin modulation element
#84Spin current magnetization rotational element
#85Magnetoresistance element with increased operational range
#86Magnetic tunnel diode and magnetic tunnel transistor
#87Magnetoresistance effect element
#88Magneto-electric logic devices using semiconductor channel with large spin-orbit coupling
#89Storage element and storage apparatus
#90Magnetic memory device that is protected against reading using an external magnetic field and method for operating such magnetic memory device
#91Metallic spin super lattice for logic and memory devices
#92Spin valve magnetoresistance element with improved response to magnetic fields
#93Recording read heads with a multi-layer AFM layer methods and apparatuses
#94Magnetoelectric chromia having increased critical temperature
#95Magnetic element
#96Ferromagnetic tunnel junction element and method of driving ferromagnetic tunnel junction element
#97Method of manufacturing a CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
#98Magnetic authenticity feature
#99Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
#100Magneto-electric voltage controlled spin transistors
#101Magnetic memory devices including magnetic layers separated by tunnel barriers
#102Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
#103Thermally assisted magnetic writing device
#104Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing
#105Thin-film magnetic oscillation element
#106Magnetic element having perpendicular anisotropy with enhanced efficiency
#107Spin transfer oscillator
#108Magnetic tunnel junction device and fabrication
#109Spintronic electronic device and circuits
#110Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
#111Magnetic stack having reference layers with orthogonal magnetization orientation directions
#112Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
#113Magnetic stack with oxide to reduce switching current
#114Magnetic memory element and driving method for same
#115Magnetic memory device
#116Magnetic element having perpendicular anisotropy with enhanced efficiency
#117Spin wave device
#118MAGNETIC STACK STRUCTURE AND MANUFACTURING METHOD THEREOF
#119STRAM with composite free magnetic element
#120Magnetic stack with oxide to reduce switching current
#121CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
#122Magnetic stack having reference layers with orthogonal magnetization orientation directions
#123Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
#124Magnetoresistive element utilizing a peltier effect junction of Au and CuNi to cool the element
#125MAGNETORESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD
#126Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
#127Magnetic memory with phonon glass electron crystal material
#128Magnetic memory element, driving method for same, and nonvolatile storage device
#129FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD OF DRIVING FERROMAGNETIC TUNNEL JUNCTION ELEMENT
#130Multi-directional pin anneal of MR sensors with plasmon heating
#131Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing current
#132Method for manufacturing magnetic field detection devices and devices therefrom
#133MAGNETOCHEMICAL SENSOR
#134Magnetic tunnel junction structure with perpendicular magnetization layers
#135Magnetic tunnel junction device and method for manufacturing the same
#136Magnetic element having perpendicular anisotropy with enhanced efficiency
#137Magnetic memory devices including magnetic layers separated by tunnel barriers
#138Magnetic memory with porous non-conductive current confinement layer
#139Magnetic stack having reference layers with orthogonal magnetization orientation directions
#140Method for providing a magnetic recording transducer
#141Spin torque oscillator sensor
#142Methods of forming spin torque devices and structures formed thereby
#143Spin torque transfer MRAM design with low switching current
#144Magnetic tunnel junction device and fabrication
#145Magnetic stack structure and manufacturing method thereof
#146Magnetoresistive element, magnetic random access memory and method of manufacturing the same
#147Magnetoresistive magnetic head having a cpp element using a heusler alloy layer and a high saturation magnetization layer
#148Magnetic memory device
#149Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
#150Magnetoresistive effect element, thin-film magnetic head with magnetoresistive effect read head element, and magnetic disk drive apparatus with thin-film magnetic head
#151Method for ultra-fast controlling of a magnetic cell and related devices
#152Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer
#153Differential magnetoresistive effect head and magnetic recording/reading device
#154Spin-valve or tunnel-junction radio-frequency oscillator
#155Magnetic memory with porous non-conductive current confinement layer
#156Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
#157STRAM with composite free magnetic element
#158MAGNETIC STACK HAVING REDUCED SWITCHING CURRENT
#159Magnetic memory with phonon glass electron crystal material
#160Magnetic stack with oxide to reduce switching current
#161Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
#162Spin-transfer torque oscillator
#163SPUTTERING APPARATUS AND FILM FORMING METHOD
#164Binary output reader structure (BORS) with high utilization rate
#165Tunnel barrier sensor with multilayer structure
#166MAGNETO RESISTANCE EFFECT DEVICE, HEAD SLIDER, MAGNETIC INFORMATION STORAGE APPARATUS, AND MAGNETO RESISTANCE EFFECT MEMORY
#167Method of using spin injection device
#168Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same
#169Methods and apparatus to fabricate soft magnetic film with preferred uniaxial anisotropy for perpendicular recording
#170MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, AND METHOD OF PRODUCING THE MAGNETORESISTIVE ELEMENT
#171Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
#172Method for manufacturing a magnetoresistive-effect device
#173Magnetic thin film, and magnetoresistance effect device and magnetic device using the same
#174Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus
#175CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
#176Method for providing AFM exchange pinning fields in multiple directions on same substrate
#177SPIN FET AND MAGNETORESISTIVE ELEMENT
#178STRUCTURE OF MAGNETIC MEMORY CELL AND MAGNETIC MEMORY DEVICE
#179Coherent spin valve and related devices
#180Core Composite Film for a Magnetic/Nonmagnetic/Magnetic Multilayer Thin Film and Its Useage
#181MAGNETO-RESISTANCE ELEMENT, MANUFACTURING METHOD THEREFOR, AND MAGNETIC HEAD
#182Current sensor and method of manufacturing current sensor
#183INTEGRATED CIRCUIT HAVING A MAGNETIC DEVICE
#184Reorientation of magnetic layers and structures having reoriented magnetic layers
#185Reorientation of magnetic layers and structures having reoriented magnetic layers
#186Radio-frequency oscillator with spin-polarised current
#187Magnetoresistive Multilayer Film
#188Method for Manufacturing a Magnetoresistive Multilayer Film
#189MAGNETIC SENSOR AND MANUFACTURING METHOD THEREFOR
#190MRAM wet etch method
#191Tunnel magnetoresistance effect device, and a portable personal device
#192Method and apparatus for depositing a magnetoresistive multilayer film
#193Mg-Zn oxide tunnel barriers and method of formation
#194Magnetoresistive reproducing magnetic head and magnetic recording apparatus utilizing the head
#195MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
#196Magnetic disk apparatus
#197Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
#198Magnetoresistive-effect device with a multi-layer magnetoresistive-effect film
#199Fabrication process for magneto-resistive effect devices of the CPP structure
#200Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device
#201Fully integrated tuneable spin torque device for generating an oscillating signal and method for tuning such apparatus
#202Process for the fabrication of multilayer thin film magnetoresistive sensors
#203Magnetic memory cell and random access memory
#204Methods of making spintronic devices with constrained spintronic dopant
#205High coercivity hard magnetic seedlayer
#206Modification
#207Method for ultra-fast controlling of a magnetic cell and related devices
#208Oscillator
#209Side reading reduced GMR for high track density
#210Side reading reduced GMR for high track density
#211Method and apparatus for depositing a magnetoresistive multilayer film
#212METHOD FOR FABRICATING MAGNETORESISTANCE MULTI-LAYER
#213Control and manipulation of pinned layer remanence of a platinum manganese based bottom spin valve
#214Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
#215Magnetic transistor structure
#216Method for manufacturing magnetoresistive element
#217Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
#218Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
#219Robust protective layer for MTJ devices
#220Magnetic element and signal processing device
#221Magnetic device having multilayered free ferromagnetic layer
#222Magnetic device having stabilized free ferromagnetic layer
#223Magneto-resistance effect element and magneto-resistance effect head
#224Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect
#225Method of partial depth material removal for fabrication of CPP read sensor
#226Magnetoresistive memory cell and process for producing the same
#227MRAM wet etch method
#228Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
#229Magnetic sensor and manufacturing method therefor
#230Manufacturing method of a magnetic sensor
#231Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
#232Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
#233Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same
#234Ferromagnetic tunnel magnetoresistive devices and magnetic head
#235Method of forming a magnetic random access memory element
#236Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
#237Method and apparatus for setting a sensor AFM with a superconducting magnet
#238Magnetic oscillating device based on spin transfer torque and magnetic sensor using the same
#239Method for manufacturing magnetic field detection devices and devices therefrom
#240Exchange coupling film and magnetoresistive element using the same
#241Magnetoresistive effect element and magnetic memory
#242Magnetic detective head comprising free layer
#243Writer structure with assisted bias
#244Magnetic sensing element including free layer having gradient composition and method for manufacturing the same
#245Coherent spin valve and related devices
#246Magnetoresistance effect element, having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance
#247CPP magneto-resistive element, method of manufacturing CPP magneto-resistive element, magnetic head, and magnetic memory apparatus
#248Method for manufacturing magnetic head device
#249Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer
#250Ferromagnetic tunnel magnetoresistive devices and magnetic head
#251Method for producing a spin valve transistor with stabilization
#252Magnetoresistive sensor
#253Exchange coupling film and magnetoresistive element using the same
#254Stitching of AFM and channeling layers for in-stack biasing CPP
#255Method for manufacturing magnetic disk apparatus
#256MRAM with improved storage and read out characteristics
#257GMR device having an improved free layer
#258Spin injection device, magnetic device using the same, magnetic thin film used in the same
#259Reorientation of magnetic layers and structures having reoriented magnetic layers
#260Antiferromagnetic stabilized storage layers in GMRAM storage devices
#261Exchange coupling film and magnetoresistive element using the same
#262Antiferromagnetically stabilized pseudo spin valve for memory applications
#263Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
#264Method for preventing magnetic damage to a GMR head during back-end processing
#265Exchange coupling film and magnetoresistive element using the same
#266Method for preventing magnetic damage to a GMR head during back-end processing
#267Self-pinned GMR structure by annealing
#268Antiferromagnetically stabilized pseudo spin valve for memory applications
#269Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling to an antiparallel pinned biasing layer
#270Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling
#271Magnetic sensing device, method of forming the same, magnetic sensor, and ammeter
#272Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process
#273Magnetic memory having a ferromagnetic tunneling junction
#274Exchange coupling film and magnetoresistive element using the same
#275Magnetic resistance device and method of manufacturing the same
#276Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
#277Current-perpendicular-to-the-plane structure magnetoresistive element and head slider
#278Method of manufacturing thin film magnetic head
#279Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of oxygen
#280Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same
#281Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance
#282Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance
#283Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
#284Current-perpendicular-to-the-plane structure magnetoresistive element and head slider including the same
#285Antiferromagnetic stabilized storage layers in GMRAM storage devices
#286Ferroelectric device including a unit element having a topological outline in a C-shape or a S-shape
#287Magnetoresistive effect element and magnetic memory having the same
#288Method for manufacturing a magnetoresistive multilayer film
#289Magnetoresistive multilayer film
#290Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus
#291Ferromagnetic tunnel magnetoresistive devices and magnetic head
#292Magnetic memory with write inhibit selection and the writing method for same
#293Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
#294Square-law detector based on spin injection and nanowires
#295Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same
#296Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer process
#297Spin transfer torque device with oxide layer beneath the seed layer
#298Tunable multilayer terahertz magnon generator
#299Heated AFM layer deposition and cooling process for TMR magnetic recording sensor with high pinning field