201587 ⎘
Thin magnetic films, e.g. of one-domain structure; Spin-exchange-coupled multilayers, e.g. nanostructured superlattices; Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic Anisotrophy Induced by Chemisorbed Species on Ferromagnets
#2Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal
#3Spin-orbit torque magnetoresistance effect element and magnetic memory
#4Narrow etched gaps or features in multi-period thin-film structures
#5Spin-orbit-torque magnetization rotational element and spin-orbit-torque magnetoresistance effect element
#6Data writing method, inspection method, spin device manufacturing method, and magnetoresistance effect element
#73D spinram
#8Narrow etched gaps or features in multi-period thin-film structures
#9Spin oscillator device
#10Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
#11Ferromagnetic graphenes and spin valve devices including the same
#12Magneto-resistance effect element including diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory
#13Magneto-resistance effect element and magnetic memory
#14CPP structure with enhanced GMR ratio
#15Method of manufacturing a CPP structure with enhanced GMR ratio
#16Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory
#17Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
#18Tunneling magneto-resistive spin valve sensor with novel composite free layer
#19Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory
#20Magnetic memory device
#21Current perpendicular to plane (CPP) magnetic read head
#22Process for manufacturing a magnetic tunnel junction (MTJ) device
#23Magneto-resistance effect element and magnetic memory
#24Tunnel barrier sensor with multilayer structure
#25Method of forming a high performance tunneling magnetoresistive (TMR) element
#26TMR device with surfactant layer on top of CoFeB/CoFeinner pinned layer
#27Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
#28Mg-Zn oxide tunnel barriers and method of formation
#29Hafnium doped cap and free layer for MRAM device
#30Magnetoresistive effect element with resistance adjustment layer of semimetal, magnetic head and magnetic reproducing apparatus
#31MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
#32Tunnel magnetoresistive element and manufacturing method thereof
#33Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
#34Magnetoresistive element and magnetic memory device
#35Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit
#36Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
#37Method and apparatus for using a specular scattering layer in a free layer of a magnetic sensor while stabilizing the free layer by direct coupling with an antiferromagnetic layer
#38Method for manufacturing magnetoresistance effect element
#39Magnetoresistive effect element, magnetic head and magnetic recording/reproducing apparatus
#40Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus
#41Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
#42Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
#43Magnetic sensor and current sensor
#44Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
#45Magnetoresistive (MR) elements having pinning layers formed from permanent magnetic material
#46Magnetoresistive (MR) elements having pinned layers with canted magnetic moments
#47Tunnel barriers based on alkaline earth oxides
#48Method of making a magnetic sensing device having an insulator structure
#49Magnetic memory device and method of fabricating the same
#50Process of manufacturing a TMR device
#51Method of manufacturing a CPP structure with enhanced GMR ratio
#52Magnetic field detecting element having a tunnel barrier formed on an amorphous layer
#53Magnetic detection head and method for manufacturing the same
#54Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same
#55Magnetic detection element and manufacturing the same
#56Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same
#57Magneto-resistance effect element and magnetic memory
#58CPP-GMR read head sensor with synthetic free layer providing suppression of spin torque noise
#59Magnetization reversal method for applying a multi-directional external magnetic field to a perpendicular magnetoresistive film
#60Magnetoresistance effect device having a bi-crystal structure composed of main grains each having a plurality of sub-grains
#61CPP magnetic detecting device containing NiFe alloy on free layer thereof
#62Magnetic detectible head comprising free layer
#63Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications
#64Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
#65Tunneling magneto-resistive spin valve sensor with novel composite free layer
#66Tunneling magneto-resistive spin valve sensor with novel composite free layer
#67Magnetoresistive element and magnetic memory device
#68MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
#69Magnetic random access memory with lower switching field through indirect exchange coupling
#70Method and system for providing a highly textured magnetoresistance element and magnetic memory
#71Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus
#72Three terminal magnetic sensor (TTM) having a metal layer formed in-plane and in contact with the base region for reduced base resistance
#73Antiferromagnetically stabilized pseudo spin valve for memory applications
#74Techniques for spin-flop switching with offset field
#75Antiferromagnetically stabilized pseudo spin valve for memory applications
#76Magnetoresistive element and magnetic memory device
#77Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
#78Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications
#79Magnetoresistance effect film, magnetoresistance effect head and solid state memory
#80Apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers
#81Via AP switching