201586 ⎘
Thin magnetic films, e.g. of one-domain structure; Spin-exchange-coupled multilayers, e.g. nanostructured superlattices; Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets by use of artificial ferrimagnets [AFI] only
SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM
#2Logic computing
#3Magnetic memory element and memory device
#4Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline MgO tunnel barrier
#5MAGNETORESISTIVE EFFECT ELEMENT
#6Memory device and memory
#7Magnetic tunnel junction structure having free layer with oblique magnetization
#8Magnetoresistive effect device and magnetic memory
#9Spin-torque oscillator, a magnetic sensor and a magnetic recording system
#10MTJ sensor based method to measure an electric current
#11MTJ sensor including domain stable free layer
#12Tunneling magnetic sensor including platinum layer and method for producing the same
#13Magnetic sensing element and method for manufacturing the same
#14MTJ sensor including domain stable free layer
#15MAGNETORESISTIVE EFFECT ELEMENT
#16Magnetoresistive effect element and magnetic memory device
#17MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC HEAD, MAGNETIC RECORDING SYSTEM, AND MAGNETIC RANDOM ACCESS MEMORY
#18Magnetoresistance element employing Heusler alloy as magnetic layer
#19TUNNEL TYPE MAGNETIC DETECTION ELEMENT IN WHICH FE COMPOSITION OF TOP/BOTTOM SURFACE OF INSULATING BARRIER LAYER IS ADJUSTED AND MANUFACTURING METHOD THEREOF
#20MAGNETIC SENSING ELEMENT INCLUDING FREE LAYER CONTAINING HALF-METAL
#21Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same
#22Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing the same
#23CPP-type giant manetoresistance effect element and magnetic component and magnetic device using it
#24Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same
#25Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and hard layer arranged in that order and method for manufacturing magnetic detector
#26Magnetic sensing element comprising a pinned magnetic layer, a free magnetic layer, and a nonmagnetic conductive layer disposed therebetween
#27Magnetoresistive effect element and magnetic memory device
#28Magnetoresistive effect element and magnetic memory device
#29Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
#30Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
#31Exchange-coupled magnetoresistive sensor with a coercive ferrite layer and an oxide underlayer having a spinal lattice structure
#32Method of manufacture of a magneto-resistive device