Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory

Storage element and storage device

Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Storage element and storage device

Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same

Magnetic memory device and method of magnetic domain wall motion

Magnetic head with stacked magnetic layers, magnetic head assembly, and magnetic recording/reproducing apparatus

Magnetic device with weakly exchange coupled antiferromagnetic layer

Magnetic memory and manufacturing method thereof

Magnetic random access memory and method of fabricating the same

MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER

Magnetoresistive element and magnetic memory

Magnetic memory

Magnetic oscillator

Magnetic random access memory with switching assist layer

Magnetic tunnel junction device

Magnetic random access memory with field compensating layer and multi-level cell

Magnetic element with improved out-of-plane anisotropy for spintronic applications

MTJ FILM AND METHOD FOR MANUFACTURING THE SAME

Magnetic tunnel junction comprising a polarizing layer

Magnetoresistive element and magnetic memory

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

Spin oscillator or magnetic recorder including multiple injection layers in the magnetic recording head

Spin torque oscillator, method of manufacturing the same, magnetic recording head, magnetic head assembly, and magnetic recording apparatus

Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

Magnetic memory element and driving method for same

Magnetic switching cells and methods of making and operating same

Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same

Assisting FGL oscillations with perpendicular anisotropy for MAMR

Method of switching out-of-plane magnetic tunnel junction cells

MAGNETIC TUNNEL JUNCTION CELLS HAVING PERPENDICULAR ANISOTROPY AND ENHANCEMENT LAYER

Magnetoresistive element and magnetic memory

Spin-transfer torque magnetic random access memory with multi-layered storage layer

Magnetic element having perpendicular anisotropy with enhanced efficiency

Magnetic memory element and storage device using the same

Magnetoresistive element and magnetic random access memory

Magnetoresistive effect element, magnetic memory

Memory element and memory device

Memory element and memory device

Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers

Spin wave device

Memory element and memory

Memory element and memory device

Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy

STRAM with composite free magnetic element

Magnetic memory with strain-assisted exchange coupling switch

Writable magnetic element

Magnetic memory element and storage device using the same

Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements

Storage element, method for manufacturing storage element, and memory

Magnetoresistance element and storage device using the same

Magnetic tunnel junction device

Magnetic memory devices

Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory

Domain-wall motion type magnetic random access memory with inclined regions and initializing method

CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording

Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer

Magnetic memory device

ST-RAM magnetic element configurations to reduce switching current

Non-volatile memory cell with precessional switching

Magnetic memory element, driving method for same, and nonvolatile storage device

Magnetic stack design

Magnetic memory cell construction

Spin-torque based memory device using a magnesium oxide tunnel barrier

Electronic devices utilizing spin torque transfer to flip magnetic orientation

Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories

Electronic devices utilizing spin torque transfer to flip magnetic orientation

Optimized free layer for spin torque magnetic random access memory

Magnetic tunnel junction transistor device

Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Spin-valve recording element and storage device

Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same

SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION

Domain wall motion element and magnetic random access memory

Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing current

Spin valve element, method of driving the same, and storage device using the same

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application

Magnetic memory cell construction

Magnetic tunnel junction structure with perpendicular magnetization layers

Magnetic element having perpendicular anisotropy with enhanced efficiency

Magnetic memory devices including magnetic layers separated by tunnel barriers

Magnetic stack having assist layer

MAGNETIZATION CONTROL METHOD, INFORMATION STORAGE METHOD, INFORMATION STORAGE ELEMENT, AND MAGNETIC FUNCTION ELEMENT

Magnetic tunnel junction device and method for manufacturing the same

Heat assisted magnetic write element

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS

Magnetic memory with porous non-conductive current confinement layer

Method and system for fabricating magnetic transducers with improved pinning

SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION

Spin polarised magnetic device

Spin torque oscillator sensor

Methods of forming spin torque devices and structures formed thereby

Spin valve element driving method and spin valve element

Magnetic stack having assist layer

Magnetoresistive device and magnetic random access memory

Magnetoresistive element, magnetic random access memory and method of manufacturing the same

Non-volatile memory cell with precessional switching

Magnetoresistance effect element and magnetic random access memory

Nonvolatile magnetic memory device

Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elements

Spin-valve or tunnel-junction radio-frequency oscillator

Spin momentum transfer MRAM design

Magnetic memory with porous non-conductive current confinement layer

Magnetic tunnel junction structure having free layer with oblique magnetization

STRAM with composite free magnetic element

Magnetic stack design

Electronic devices utilizing spin torque transfer to flip magnetic orientation

Magnetoresistive effect device and magnetic memory

Magnetic thin film and method for forming the film, and magnetic thin film-applied device

Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers

Spin-transfer torque oscillator

Magnetic field sensing system using spin-torque diode effect

Magnetic memory cell construction

Magnetic memory with strain-assisted exchange coupling switch

Spin MOSFET and reconfigurable logic circuit using the spin MOSFET

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance

ST-RAM magnetic element configurations to reduce switching current

Method for producing an element, including a multiplicity of nanocylinders on a substrate

Apparatus for Storing Electrical Energy

MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

Magnetoresistive tunnel junction magnetic device and its application to MRAM

Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element

Magnetic recording medium having a secondary recording layer made of a material having a negative crystal magnetic anisotropy and magnetic recording and reproducing apparatus

Magnetoresistive effect element and magnetic random access memory

Multibit magnetic random access memory device

SPINTRONICS COMPONENTS WITHOUT NON-MAGNETIC INTERPLAYERS

Magnetic memory device having spin wave oscillator arranged to heat magnetic tunnel junction element

Magnetic recording head having spin wave oscillator which locally heats a recording track

Magnetoresistive element

Magnetoresistive element and magnetic memory

Spin transistor and magnetic memory

Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise

System and method for reducing critical current or magnetic random access memory

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization

Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device

Perpendicular magnetic recording media, production process thereof, and perpendicular magnetic recording and reproducing apparatus

Magnetoresistive element and magnetic memory

Magnetic oscillation element

Exchange coupling film and magnetic device

Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

Functional blocks for assembly

Magnetic recording element and magnetic memory

System and method for reducing critical current of magnetic random access memory

Magnetic tunneling junction structure for magnetic random access memory

Magnetic Thin Film For High Frequency, and Method of Manufacturing Same, and Magnetic Device

Magnetic field read sensor based on the extraordinary hall effect

Oscillator

Magnetic head

Systems and methods for flaw detection and monitoring at elevated temperatures with wireless communication using surface embedded, monolithically integrated, thin-film, magnetically actuated sensors, and methods for fabricating the sensors

Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells

Information storage medium with laterally magnetised dot array, and process for producing said medium

Magnetoresistive (MR) elements having pinned layers with canted magnetic moments

High speed low power annular magnetic devices based on current induced spin-momentum transfer

Magnetic spin valve with a magnetoelectric element

Exchange-coupled free layer with out-of-plane magnetization

Magnetic oscillating device based on spin transfer torque and magnetic sensor using the same

Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer

Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer

Magnetization reversal method for applying a multi-directional external magnetic field to a perpendicular magnetoresistive film

Material and uses thereof

MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

High speed low power magnetic devices based on current induced spin-momentum transfer

Multi-bit magnetic random access memory device

Magnetic sensor having a frequency filter coupled to an output of a magnetoresistance element

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

Perpendicular magnetization magnetic element utilizing spin transfer

Magnetic head having PtMn layer formed by ion beam deposition

Stress assisted current driven switching for magnetic memory applications

Method for forming a head having improved spin valve properties

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Magnetoresistance effect element comprising a nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same

High speed low power magnetic devices based on current induced spin-momentum transfer

Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same

Spin valve transistor with self-pinned antiparallel pinned layer structure

Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device

Ultra-density nanostructure GdFe thin film with large perpendicular magnetic anisotropy for a new generation of spintronic device

System and method for skyrmion based logic device

Spin transfer torque device with oxide layer beneath the seed layer

Heat assisted perpendicular spin transfer torque MRAM memory cell

Three-dimensional nonvolatile memory

Magnetic tunnel junctions and methods of fabrication thereof

Integrated circuits with magnetic tunnel junctions and methods of producing the same

Microwave write-assist in series-interconnected orthogonal STT-MRAM devices

Microwave write-assist in orthogonal STT-MRAM

Method for combining NVM class and SRAM class MRAM elements on the same chip

Perpendicular magnetic tunnel junction device with offset precessional spin current layer

Switching and stability control for perpendicular magnetic tunnel junction device

AC current write-assist in orthogonal STT-MRAM

Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM

Self-generating AC current assist in orthogonal STT-MRAM

Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy